This standard is equivalent to the international standard IEC 747-7-1988 "Semiconductor Discrete Devices and Integrated Circuits Part 7: Bipolar Transistors". This standard gives the following types of bipolar transistors: - Low-power signal transistors (excluding switches); - Power transistors (excluding switches and high-frequency transistors); - High-frequency power transistors for amplification and oscillation; - Switching transistors. GB/T 4587-1994 Semiconductor Discrete Devices and Integrated Circuits Part 7: Bipolar Transistors GB/T4587-1994 Standard download decompression password: www.bzxz.net

National Standard of the People's Republic of China
Semiconductor discrete devices and integrated circuits
Part 7: Bipolar transistors
Semiconductor disrrete devices and integrated circuitsPurt 7 : Bipolar transistorsGB/T 4587 : 94
IEC 747-7- 1988
Replaces G4587-84
GB 680186
This standard is equivalent to the international standard IFC7477--1988 "Semiconductor discrete devices and integrated circuits Part 7: Bipolar transistors".
Chapter 1 General provisionsbZxz.net
1 Introduction
Usually, this standard is used together with IEC:747-1-1983 "General provisions for semiconductor discrete devices and integrated circuits Part 1 General provisions". All the following basic information can be found in JEC747-1: - Terminology
- Text symbols:
Basic ratings and characteristics;
- Test methods
- Acceptance and reliability
The arrangement order of the various parts of this standard conforms to the provisions of IEC 747-1 Chapter 1, Section 2.1. 2 Scope
This standard gives the standards for the following types of bipolar transistors: small power transistors (excluding switching); power transistors (excluding switching and high-voltage): high-frequency power transistors for efficiency and oscillation: switching transistors
3 Text symbols
Usually, text symbols are added to the title of the term. When a term has several text symbols, this standard only selects the most commonly used one. Chapter I Terminology and Symbols
1 Types of transistors
1.1 Junction transistor A transistor with a base and two or more junctions. Note: The operation of a junction transistor depends on the injection of minority carriers into the base. Approved by the State Administration of Technical Supervision on December 31, 1994 and implemented on August 1, 1995
GB/T4587-94
1.2 Bidirectional transistor A transistor with substantially the same electrical characteristics when the emitter and collector terminals are interchanged. Note: Bidirectional transistors are sometimes called symmetrical arms. However, the latter term is not used because it may mislead people into thinking that the transistor is perfectly symmetrical. 1.3 Telrode transistor A transistor with four electrodes, usually two independent bases and two base leads. 1.4 Unipolar transistor A transistor that uses only one polarity of charge carriers. 2 General Terms
2.1 Base terminal base terminal
Connected to a specified externally available connection point in the base region. 2.2 Collector terminal coilcctorterminal Connected to a specified externally available connection point in the collector region. 2.3 Emitter terminal emitter lerminal Connected to a specified externally available connection point in the emitter region. 2.4 Collector region collector regian
The region between the collector junction and the collector of a transistor. 2.5 Emitter region
The region between the emitter junction and the emitter of a transistor. 2.6 Base region base region
The region between the emitter junction and the collector junction of a transistor. 2.7 Collector junction collector junction
A junction located between the base and collector regions, usually reverse biased, through which carriers change from minority carriers to majority carriers.
2.8Emitter junction
A junction located between the base region and the emitter region, usually forward biased, through which the current carrier changes from majority carrier to minority carrier.
3Circuit configuration
3.1Common base
A circuit configuration in which the base terminal is common to the input circuit and the output circuit. In this circuit, the input terminal is the emitter terminal and the output terminal is the collector terminal.
3.2Inverse baseInversc communbascA circuit configuration in which the base terminal is common to the input circuit and the output circuit. In this circuit, the input terminal is the collector terminal and the output terminal is the emitter terminal.
3.3Common collectorcommoncoilctor
A circuit configuration in which the collector terminal is common to the input circuit and the output circuit. In this circuit, the input terminal is the collector terminal and the output terminal is the emitter terminal.
inversecommoncollectot
3.4 ​​Inverse common collector
A circuit configuration in which the collector terminal is common to the input circuit and the output circuit. In this circuit, the input terminal is the emitter terminal and the output terminal is the base terminal.
3.5 Common emitter communinetnitter
A circuit configuration in which the emitter terminal is common to the input circuit and the output circuit. In this circuit, the input terminal is the base terminal and the output terminal is the collector terminal.
GB/T 4587-94
inversecommonetniter
3.6 Inverse common emitter
A circuit configuration in which the emitter terminal is common to the input circuit and the output circuit. In this circuit, the input terminal is the collector terminal and the output terminal is the base terminal.
4 Terms related to constant values ​​and characteristics
4.1 Punch-through voltage Punch-through voltage is the value of collector-base voltage above which the emitter-base open-circuit voltage increases almost linearly with the collector-base voltage.
: (1) The voltage at which the collector depletion layer extends through the base region to the emitter depletion layer. ② In the United States, this term is also known by the English name \rench Thraugh voltage\. 4.2 Saturation voltage
4.2.1 Collector emitter saturation voltage is the voltage between the collector and the emitter at such base current or base-emitter voltage that the collector current remains essentially constant as the base current or base voltage increases. Note: This voltage is the voltage between the collector and emitter when both the base-emitter junction and the base-emitter junction are forward biased. 4.2.2 Base-emitter saturation voltage Hxe-emitter saluration voltage AGC is the voltage between the base and emitter under such base current or base-emitter voltage conditions that the collector current remains substantially constant when the base current or collector voltage increases beyond this condition. Note: This voltage is the voltage between the base and emitter when both the base-emitter junction and the base-emitter junction are forward biased. 4.3 Cut-off current (reverse current) When the emitter (or collector) is open circuit and its reverse voltage is a specified value, the reverse current flows through the base-collector junction (or base-emitter junction).
4.4 Collector contact resistance In the equivalent circuit, the resistance between the collector terminal and a point that does not reach the inside of the collector. 4.5 Emitter scries resistance The resistance between the emitter terminal and the point that does not reach the inside of the emitter in any equivalent circuit. 4.6 Saturation resistance When the collector current is limited by an external circuit, under the conditions of specified test current and collector current, the resistance between the collector terminal and the emitter terminal,
Note: Saturation resistance can be expressed as the ratio of average voltage to total current or the ratio of differential voltage to differential current. Which method to use must be specified. 4.7 Extrinsic base resistance The resistance between the base terminal and the point that does not reach the inside of the base in the equivalent circuit. 4.8 Emitter depletion layer capacitance The partial capacitance generated by the depletion layer at both ends of the emitter-base junction. Note: Emitter depletion layer capacitance is the sum of the total potential difference between the two ends of the layer. 4.9 Collector depletion layer capacitance tollectordepletionlayer capacitance The portion of capacitance produced by the depletion layer at both ends of the collector-base junction. Jiang: The collector depletion layer capacitance is the sum of the total potential difference across the depletion layer. 4.10 (Switching transistor) delay time delaytime (efa switchhiugtransistor) The time interval from the application of a pulse to the input of the switching transistor to change it from a non-conducting state to a conducting state to the appearance of a pulse caused by the outgoing charge carrier at the output. Calculation: The delay time is usually calculated between two points where the applied pulse and the output pulse amplitude are 1U apart (see Figure 1). 4.11 (JF switching transistor) rise time risetime (of awitchingLransistor) GB/T 4587-94
When the switching transistor changes from a non-conducting state to a conducting state, the time interval between the two instants when the pulse value at the output terminal reaches the specified upper and lower limits respectively.
Note: The upper and lower limits of the passband are 10% and 90% of the output pulse amplitude respectively (see Figure 1): 4.12 Carrier storage time (of a switching transistor) The time interval from the point at which the pulse applied to the input terminal of the (switching transistor) begins to fall to the point at which the pulse generated by the charge carrier at the output terminal begins to fall.
Note: The point at which the fall begins is usually sufficient to calculate 90% of the amplitude of the two pulses (Figure 1). 4.13 Fall time (of a switching transistor) The time interval between the two instants when the value of the pulse at the output terminal reaches the specified upper and lower limits when the switching transistor changes from the conducting state to the non-conducting state.
Note: The upper and lower limits are 90% and 1% of the output pulse amplitude respectively (see Figure 1): 4.14 Maximum frequency of oscillation The maximum frequency of oscillation of the transistor under specified conditions. Note: The maximum oscillation frequency is approximately equal to the frequency when the maximum power gain is reduced to 1. H-
External pulse
Simulated waveform:
Han Chu Zhang produced
Simulated waveform:
is the delay time
waist pulse cabinet
is the rising time
of the peak pulse
, is the stack current storage time
axis pulse
(actual waveform)
Figure 1 Forward-turning characteristics of the switching tube
CB/T 4587--94
4.15 Characteristic frequency (f) tratisitionFrequency The modulus of the common emitter minimum signal short-circuit forward current transfer ratio! The product of h2l| and the measurement frequency (the measurement frequency should be selected so that h21 decreases by approximately 6dB/octave).
4.16 Frequency of unity current transfer ratio (f.) frequencyofunitycurrenttransferratio The modulus of the common emitter small signal current short-circuit forward current transfer ratio. The frequency at which it drops to 1. 4.17 Current transfer ratio, current amplification factor curreut transfcrratio: current amplification factor 4.17.1 Small-signal short-circuit forward current transfer ratio small-signal short-circuit forward current transfer ratio Under small signal conditions. When the output is short-circuited to the AC, the ratio of the AC output current to the small sinusoidal input current generated. 4.17.2 Static value of the forward current transfer ratio staticvalueof the forward current transfer ratio The ratio of the output DC current to the input DC current when the output voltage remains unchanged. 4.17.3 Inherent (large-signal) forward current transfer ratio Inherent (large-signal) forward current transfer ratio When the collector-emitter voltage is a specified constant, the difference between the collector DC current and the collector-base cutoff current divided by the sum of the base DC current and the collector-base cutoff current. 4.18 Small-signal open-circuit reverse voltage transfer ratio Small-Rignal open-circuit reverse voltage transfer ratio Under small-signal conditions, the ratio of the AC voltage at the input terminal to the AC voltage applied to the output terminal when the input terminals are connected in parallel. Iransienl crrent ratio in katuration (of a switching 4. 19 Saturation transient current ratio (switching transistor)
The ratio of the transient collector current of the transistor to the minimum base current required to maintain saturation. 4.20 Early voltage Vry (for computer-aided circuit design) Early voltage Vev (for.cmputer-aidedetcircuitdesign) In the relationship diagram of collector current and collector-emitter voltage with base current as the parameter, the output characteristic is extrapolated to the voltage axis. The voltage corresponding to this intersection is called the Ley voltage. The voltage is independent of the magnitude of the collector current (see Figure 2). Fr
5S parameters
5.1 General introduction
Use the following two equations to determine the 5-parameters: 0
Diagram
h, - sd:3242]
= 5: — 5210:
CB/T4587-94
In the formula: αt and a2 are the values ​​of the incident wave, b and b are the values ​​of the reflected wave, and the dimensions are w1\. They are suitable for general two-port networks and also for special four-port networks. For the latter case, ; and are defined as: V,+2al.
double, two
or i=1 or 2; R, hand01
IL:Zu.=R+jxu
(see Figure 3)
2 and Z.2 are the reference impedances of input and output, respectively, and m and 2 are usually complex numbers.
Four-channel measurement network
When the 5-parameter is used in its commercial frequency and super commercial frequency crystal specifications, 2.-Z2=R. (R. is equal to 500 in most cases) At this time, equation (1) can be changed to the following: V,-RI, =m(V,+RI)+S2(V:+RI)1
V.- RI, - *, (V + R,+,) +sa.(V+ + RI): Here, equations (1) and (3) are used to illustrate the meaning of S parameters: 5.
The ratio of the complex value of the reflected wave at the input port to the complex value of the incident wave at the input port when the output valve and source resistance are both R, iV, -R,i
VI Ri .--R
iz, - R.:
[z,!--x]
Su is equal to the reflection coefficient of the input impedance relative to R. when the output terminal is connected to R. Similarly:
. When the input terminal resistor and source resistance are both R, the ratio of the complex value of the reflected wave at the output terminal to the complex value of the incident wave on the output port:
or equal to the reflection coefficient of the output impedance relative to R: when the input terminal resistor and source resistance are both R, in addition,
[When the input terminal resistor and source resistance are both R, the ratio of the complex value of the transmission wave on the output terminal to the complex value of the incident wave on the input port GB/T 4587-94
+ V, - Renl.
V+ R7 +- =(1/2V a( )
" is equal to the ratio of the output voltage V to the open circuit source voltage V divided by 2 when the source resistance and the load resistance are R. Similarly:
32 is equal to the ratio of the complex value of the transmitted wave at the input port to the complex value of the incident wave at the output port when the input resistance and the source resistance are R,
or the ratio of the input voltage V to the open circuit source voltage V divided by 2 when the source resistance and the load resistance are R. 5.2 Definitions
The following definitions are given for general cases. For transistors, the values ​​of these parameters may be different depending on the circuit configuration used and the differences between large and small signals. 5.2.1 Input reflection coefficient (su) inputrele:c:tioncoeffieipu(m)When the output resistance and source resistance are both K, the complex value of the reflected wave at the input port is the ratio of the complex value of the incident wave at the input port.
Note: This coefficient is equivalent to the reflection coefficient of the input impedance of the transistor to the source impedance R when the output port is connected to R. 5.2.2 Output reflection coefficient (sa)outputreflccttoncoefficjent(s)When the input resistance and source resistance are both R, the complex value of the reflected wave at the output port T is the ratio of the complex value of the incident wave at the output port 1.
Note: The input reflection coefficient is equivalent to the reflection coefficient of the output impedance of the transistor to the source impedance R when the input port is connected to R. 5.2.3 Forward transmission coefficient (S2i) Forward transmission coefficient (S21) The ratio of the complex value of the transmission wave at the output port to the complex value of the incident wave at the input port when the output resistance and source resistance are both R,
Note: The forward transmission coefficient is equivalent to the ratio of the complex value of the output voltage to the complex value of the parallel voltage of 1/1 when the input terminal of the transistor is connected to the input terminal of the transistor and the input is powered by a power supply with a resistance of &. 5.2.4 Reverse transmission coefficient (Stz) Reverse transmission coefficient (S) Under small signal conditions, the input resistance and source resistance are both R, and the ratio of the complex value of the transmission wave at the input port I to the complex value of the incident wave at the output port 1IL.
Let the reverse transmission coefficient be equivalent to the transistor's auxiliary input terminal R. When the input terminal is powered by a power supply that is also a chemical circuit, the complex value of the input terminal voltage is one-half the complex value of the power supply voltage. General description:
For all S-parameters, the resistance R is the same and its value is usually n. In the above definitions, those involving the power source and the termination circuit may not be applicable to some transistors (for example, MS field effect transistors).
5.2.5 The frequency when the forward transfer coefficient is 1 (ff) Ircyuericyolunityforwardtransnussioncocfficient (f.)
The subtraction when the modulus of the forward current transfer coefficient 2 drops to 1. 5.3 Application of S parameters
The S parameters defined in Article 5.2 can be used as follows: 5.3.1 Relationship between S-parameters and other parameters (y+z,h) The following matrices are identical:
(y) - R.(I +sn+ sn + det s)
(2) = (1 ~ : + der )
I-+ - det+
CB/T 4587-94
[( ~ s., + 5u -- det s)
25 21
[(I + su - S - der s)
[(1 + + $2 + det s)R.
L- 2591
I 1 - si1 - s + det s
R21fu152+ det s
+ I+ si + se + dct s
det +-. R.
I - 311 - 52 + det 5
det -
5.3.2 Convert S-parameters to other parameters (y+.h) The following are identities:
I+ su - Su - det +
1 - sr: + 52- -- del -
(1+ $ — 3
(1 -s I se det s))
1 su 2: + det s)
[812521 +( - 81)(1 + 22)-
[(1 + s(+) - s2R
-- 2812-
[(1 +5)(1 +5) - 51s0]R
(1 + )(1 + ) 22rR
82t +(1 +5m(1=22)71
( + (+) R
[-m(1 + ) R
Ls., + (1 - sm)(1 I sen).
3.:(1 .33(1 1 522)
331(1(1 + s)
r(1 - 5>(1 - 52) - 5:2521 1)[35m + (1-sm)(1+ 5)]R
F1+ s(1 - sa) +a .
8u[(-(1 - 2) - ]
—2512
212 - [(- s(1 - 2) - 12 ]
[(1 -1pr/-'sm) = s5a]
[+ ss + suak.
[(1s(1 s) - 31]
5.3.3 Using S-parameters to Calculate the Characteristics of a PTU Amplifier When the Load Impedance is Z. The input reflection coefficient of tt, relative to R, is determined by the load reflection coefficient r:5g
=su1-2
2,-R.
GB/T 458794
When the source rough impedance Z. output source reflection coefficient r is determined, the output reflection coefficient relative to R. is: Fe2al
r -5gx+
fi-rns
Current gain
m(1-rt)
(1u)-r(s2-det s)
s(1+r)
Voltage gain
(1+su)-r,(sa+det s)
Power gain
Converter gain
2=[Av}.1-n/-n1
2=182r1
1-r/-/1-/\
1-rt/2
[1-r,s2 /\-[s-rdet s]
(1-1.i*)(1- [rt/)
Gr-[s2i1*
[(i-res)(1ris)--i5i23.
Unconditional stability requirement:
6 Text symbols
I - Isu /*- Isal* -+ Idet s'215t2sg
1- u* - [s1 > 0
1 2 [si8ai 0
6.1 Text symbols for current, voltage and power 6.1.1 Basic text symbols
See IEC747-1 Chapter V, Article 2,
6. 1.2 Supplementary subscripts
In addition to the general subscripts given in Section 3.3.1 of Chapter V of IFC747-1, the following special subscripts are recommended for double-stage transistors: 3.b base terminal
Cc collector terminal
E,e emitter terminal"\
fl floating
pE punch-through
R (not used as the first subscript) specified voltage sat saturation
X specified circuit
6.2 Text symbols for electrical parameters
6.2.1 Basic text symbols
See Section 3 of Chapter √ of IEC747-1
6.2. 2 Supplementary subscripts
In addition to the general subscripts given in 3.3.1 of Chapter √ of IEC747-1, the following special subscripts are recommended for bipolar transistors: Bb base; common base configuration
[collector, common gate configuration
Ee emitter detection: non-emitter configuration
t. Large signal
sat saturation
S, s storage
T transfer
6. 3 Other semantic symbols
6 3. 1 Basic text symbols
See 1 of Chapter √ of IEC747-1
E.4 Chinese symbols - List
GB/T 4587--94
The following table gives the recommended text symbols for bipolar transistors. They are compiled according to the general rules, names and nomenclature
6. 4. 1 Voltage
Frame electrode base (dc,) voltage
Drive sensitive-emitter (dt) electric note
emitter base (dc,) ground voltage
electrode-emitter (lc) voltage
electrode-emitter (dc) voltage
I-0, is the standard value
emitter base (dc) voltage positive
! =0 is the specified value
collector-emitter (white current)
Is--, I is the current value
collector-emitter (white current) voltage
Ru-R is a fixed value
collector-emitter (DC) voltage E
V=u, t, is the specified value
collector-emitter (DC) voltage
VL=X(fixed),
(emitter-base junction reverse bias)
: is the specified value
city voltage (open circuit) ||t t||Collector-base breakdown voltage
I:==0.1. is the specified value
Text symbol
V:Fkr\
All these breakdown voltage abbreviations are named BV
Emitter-base breakdown voltage
=0, is the specified value
Collector-emitter breakdown voltage
=0,1 is the specified value
Current voltage (standard circuit)
Collector-emitter breakdown voltage
Re=R,Ic is the specified value
Collector-emitter breakdown voltage
VE=X,Ic is the specified value
Breakdown voltage (short circuit)
Collector-emitter breakdown voltage
V=0,I. is the specified value
Emitter-base floating voltage
e-0,V is the specified value
Punch-through voltage
Channel electrode emitter saturation positive
I..I is the specified value Fixed value
Base-emitter saturation voltage
n.lc is the specified value
6.4.2 Current
Base (DC) current
Collector (DC) current
Emitter (DC) current
Collector cutoff current
-0, Vc is the specified value
Collector cutoff current
-0, Vc is the specified value
GB/T 4587.--94
Text symbols
VrBRTEA
VrEROLEs
Veuryrs
All these abbreviations of breakdown voltage are written as BV. All these abbreviations of breakdown voltage are named by BV.
Emitter cut-off current
1—0, V is a fixed value
Collector cut-off current
R--R, Ve is a specified value
Collector cut-off current
Wm.- 0.VcE is the specified value
Collector cut-off current
=X,Ve is the specified value
True set cut-off current
VR-X.Vu is the specified value
6.4.3 Power
Collector dissipation factor
T..or T..is the specified value
Total input power of all shares
(average value of monitoring)
1lI Ter is the specified value
6.4.4. Electrical parameters
GB/T 4587-94
Text symbols
6.4.4.1 Static parameters (bias conditions are specified values) Static value of forward current transfer ratio
(common emitter state)
Static value of input impedance
(common emitter configuration)
Intrinsic forward current transfer ratio
h2LFt or
6.4.4.2 Small signal parameters (bias conditions and frequency are specified values)haie
When Vce is constant
When V is constant
fe-icw
in+Teu
When Ve is constant
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