Some standard content:
Mechanical Industry Standard of the People's Republic of China
Parameter Symbols of Power Semiconductor Devices
JB/T5844--91
This standard adopts all the text symbols of the International Electrotechnical Commission standard IEC747 Semiconductor Devices Part 1 "General Principles", Part 2 "Rectifier Diodes" and Part 6 "Thyristors", as well as some symbols in the West German Industrial Standard DIN41785 "Text Symbols of Power Semiconductor Devices".
Subject Content and Scope of Application
This standard specifies the parameter symbols of power semiconductor devices and their basic symbols and superscripts. This standard applies to the parameter symbols of power semiconductor devices such as rectifier diodes and thyristors. 2 General Principles
2.1 Symbols of Current, Voltage and Power
2.1.1 Basic Symbols
I, i=current
V, v=voltage
P, p=power
Capital representation of basic symbols;
a. Maximum value (peak value)
b, average value,
c, DC value
d, root mean square value (effective value).
The lower case of the basic symbols indicates the solution time value that changes with time. 2.1.2 General subscripts
AV, av=average value
F, f=forward
M, m=maximum (peak value)
MIN, min=minimum value
N=nominal (voltage and current)
O, 0=open circuit
R, r=reverse, repetitive (when used as the second subscript) S, s=short circuit, surge or non-repetitive (when used as the second subscript) RMS, rms root mean square value
(BR)=breakdown
|(OV)=overload
tot=total
th=thermal
2.1.3 Use of superscripts
2.1.31 Capital superscripts indicate:
Approved by the Ministry of Machinery and Electronics Industry on October 24, 1991
Implementation on October 1, 1992
DC value (no signal), for example
Total instantaneous value, for example
Total average value, for example I(4V)
Total maximum value (peak value), for example I.
JB/T5844—91
2.1.3.2 Lowercase superscripts are only used for changing component values, that is, to indicate: instantaneous value of alternating component;
b. : The root mean square value of the alternating component;
The maximum value (peak value) of the alternating component;
The average value of the alternating component.
2.1.3.3 Other uses of superscripts
Indicates the terminal through which the current passes (the first superscript), such as Ia, a, IG, iG. a.
b. Indicates the two terminals or measurement points for measuring voltage (using two superscripts), the first superscript indicates a terminal of the device, and the second superscript indicates the reference terminal or circuit contact. When there is no confusion, the second superscript can also be omitted. For example, VA (V), Vcx (Vc). c. Indicates the power supply voltage or power supply current (using two repeated superscripts), such as Vcc, IEE. If the reference terminal is indicated, it is indicated by the third superscript, such as VccB.
2.1.4 Combination of basic symbols and subscripts Table 1 explains the combination of the rules given in 2.1.1, 2.1.2 and 2.1.3 Table 1
Basic letters
2.2 Basic symbols for other quantities
2.2.1t=time, duration
2.2.2T=temperature
The common negative symbols for temperature are:
(amb)=ambient
(case=tube shell
J, j=junction
stg=some storage || tt||2.2.3f=rate
time value of solution of alternating component
total time value of solution
no special mark or superscript;
root mean square value of alternating component
with special mark or superscript;
maximum value (peak value) of alternating component
average value of alternating component
no special mark or superscript;
DC value when there is no signal
with special mark or superscript
total maximum value (peak value)
total average value||tt| |2.2.4Rs=thermal resistance (when th and other superscripts are mixed together, it can be written as R(n)156
2.2.5·Z, Z(),=transient thermal impedance
3 Parameter symbols of rectifier diodes
JB/T.5844—91
3.1 Superscripts
In addition to the superscripts given in 2.2, rectifier diodes also have the following superscripts: A, a=anode
K, k=cathode
0=rectification
(TO)=threshold
T=conduction, Slope
W=working, pulse width
3.2 Parameter Symbol Table
3.2.1 Voltage
The parameter symbols of voltage are shown in Table 2
Parameter Name
Forward DC Voltage
Forward Peak Voltage
Forward Average Voltage
Threshold Voltage
Reverse DC Voltage
Reverse Peak Voltage
Reverse Working Peak Voltage
Reverse Repetitive Peak Voltage
Reverse Non-repetitive Peak Voltage||tt| |Breakdown voltage
Nominal voltage
Forward recovery voltage
Forward repetitive peak voltage
3.2.2 Current
See Table 3 for the parameter symbols of current
Parameter name
Forward DC current
Forward average current
Forward peak current
Forward repetitive peak current
Forward overload current
Forward (non-repetitive) surge current
Average output rectified current
Reverse DC current||t t||Vg(AV)
Im(4V)
I(v,Ino)
Parameter name
Reverse peak current
Reverse recovery current
Reverse repetitive peak current
Breakdown current
Nominal current,
Reverse average current
3.2.3 Power
Power parameter symbols see Table 4
Parameter name
Forward power dissipation
Reverse power dissipation
Total power dissipation Pot
Forward average power dissipation
Reverse average power dissipation
Reverse repetitive peak power dissipation
Reverse surge (non-repetitive) power dissipation
Opening power dissipation:
Opening average power dissipation
Opening total instantaneous power dissipation
Opening peak power dissipation
Shutdown power dissipation:
Shutdown average power dissipation
Shutdown total instantaneous power dissipation
Shutdown peak power dissipation
3.2.4 Others Parameters
Other parameter symbols are shown in Table 5
Parameter name
Forward slope resistance
Forward recovery time
Reverse recovery time
Voltage hysteresis time (storage time)
Reverse current fall time
(Reverse) recovery charge
Full charge
Residual charge
4. Parameter symbols of transistors
4.1 Superscript
JB/T5844-91
Continued Table 3
I (BR)
IR(AV)
PR(AV)
PpT(AV)
PBR(4V)
In addition to the subscripts given in 22, the thyristor has the following subscripts 158
IRM1, Im are the values of
25°C high temperature
A, a=anode
K, k=cathode
G, g=gate
D, d=off state, not triggered
T road state, triggered, slope
T, = main terminal 1
T. = Bao terminal 2
t=open
H, h hold
(BO)=turn
Q, q=turn off
(TO)=threshold
L=hold
C=commutation
JB/T5344—91
cr=critical (this subscript is often omitted when it does not cause mixed effect)d=delay
f=fall
r=rise
W=pulse width, working (when used as the second subscript)4.2 Parameter symbol table
4.2.1 Main voltage, anode-cathode voltage
Bao voltage, anode-cathode voltage parameter symbols see Table 6 Parameter name
Off-state DC voltage
Off-state peak voltage
Off-state working peak voltage
Off-state repetitive peak voltage
Off-state non-repetitive peak voltage
DC transition voltage
On-state DC voltage
Minimum on-state voltage
On-state peak voltage
Threshold voltage
Reverse DC voltage
Reverse peak voltage
Reverse working peak voltage
Reverse repetitive peak voltage
Reverse non-repetitive peak voltage
Reverse breakdown voltage
Main voltage
Positive off-state voltage
Negative off-state voltage
Average on-state voltagewww.bzxz.net
Vro, Vrtto)
VT(AV)
Bidirectional thyristor
Bidirectional thyristor
Bidirectional thyristor
4.2.2 Main current, anode current, cathode current JB/T.5844—91
Main current anode current, cathode current parameter symbols see Table 7 Table 7
Parameter name
Off-state DC current
Off-state peak Value current
DC breakover current
DC holding current
On-state DC current
On-state peak current
On-state overload current
On-state average current
On-state repetitive peak current
On-state RMS current
On-state surge (non-repetitive) current
Reverse blocking DC current
Reverse peak current
Reverse recovery peak current
Reverse strike current
Reverse recovery current
Injection current
Main current
Positive off-state current
Negative off-state Current
Reverse average current
Reverse RMS current
Reverse surge current
Switchable current
Switchable peak current
4.2.3 Gate voltage
Gate voltage parameter symbols are shown in Table 8
Parameter name
Gate voltage
Gate forward DC voltage
Gate forward peak voltage
Gate reverse DC voltage
Gate reverse peak voltage
Gate trigger DC voltage
Minimum gate trigger voltage
Gate non-trigger DC voltage
Gate Turn off DC voltage
I(ov),I(ov)
IT(AV)
IT(RMS)
Ig(AV)
In(RMs)
VG，VG
VFGI.VGFM
Vnaxr，Vonx
VGT(MIN)
IRMI,IFMa are the values of high temperature of 25°C respectively
IRMI,IM: are the values of high temperature of 25°C respectively
Bidirectional thyristor
Bidirectional thyristor
Bidirectional thyristor| |tt||Reverse conducting thyristor
Reverse conducting thyristor
Reverse conducting thyristor
Turn-off thyristor
Turn-off thyristor
4.2.4 Gate current
Gate current parameter symbols are shown in Table 9
Parameter name
Gate current
Gate forward DC current
Gate forward peak current
Gate reverse DC current
Gate trigger DC current
Gate non-trigger DC current
Gate turn-off DC current
4.2.5 Time quantity
Time quantity parameter See Table 10 for numerical symbols
Parameter name
Gate control turn-on time
Gate control turn-off time
Circuit commutation turn-off time
Gate control delay time
Gate alarm control rise time
Trigger extension time
Off-state recovery time
Maintain turn-off interval
Reverse recovery time
Reverse current fall time
Pulse turn-off time
Pulse width
Voltage hysteresis time (storage time)
4.2.6 Power
See Table 11 for power parameter symbols||tt ||Parameter name
On-state dissipation power
Reverse dissipation power
Off-state dissipation power
On-state average dissipation power
Gate average dissipation power
Gate reverse average dissipation power
Gate peak dissipation power
Opening dissipation power:
Opening average dissipation power
Opening total instantaneous dissipation power
Opening peak dissipation power
JB5844--91
IG, ic
IPGM, IGFM
tad, ta
tot, tt
tw, tp
PT(AV)
PG(AV)
PRG(&P)
PTT(AV)
When there is no misunderstanding, t can be used.
When there is no misunderstanding, t can be used,
Reverse conducting triode thyristor
Reverse blocking and reverse conducting triode thyristor turn-off thyristor
Turn-off thyristor
Parameter name
Turn-off dissipation power,
Turn-off average dissipation power
Turn-off total instantaneous dissipation power
Turn-off peak dissipation power
4.2.7 Other parameters||tt| |For other parameter symbols, see Table 12
Parameter name
On-state slope resistance
Critical rise rate of commutation voltage
Off-state recovery charge
Total pulse energy of on-state current
Critical decrease rate of commutation on-state current
(Reverse) recovery charge
Turn-off gain
Critical rise rate of off-state voltage
Critical rise rate of on-state current
Temperature and temperature-related Parameters
Parameter symbols for temperature are shown in Table 13
Parameter name
Junction temperature (equivalent temperature)
Junction temperature rise
Maximum junction temperature
Maximum junction temperature rise
Case temperature
Radiator temperature
Ambient temperature
Must-store temperature
Parameters related to temperature
JB5844—91
Continued Table 11
PRQ (AV), PDQ (AV) | | tt | | PrQ, PpQ | | tt |
Ti,T(i)
To, Tese
Ta, Taa)
For bidirectional and reverse conducting triode thyristors, dv/at(c) is preferred
For reverse conducting triode thyristors
For bidirectional thyristors
For turn-off thyristors
If there is no misunderstanding, 4v/at can be used
If there is no misunderstanding, di/t can be used
Parameter name
Case heat dissipation Resistance
Contact thermal resistance
Junction heat dissipation resistance
Heat sink thermal resistance
Total thermal resistance
Junction-to-case transient thermal impedance
Junction-to-heat dissipation transient thermal impedance
Total transient thermal impedance
Pulse transient thermal impedance
Thermal derating factor
Additional instructions;
JB/T5844--91
Re, R(tnlie
Rja,Tea)ja
ZioZ(t)o
ZjZ(ta)i
Zjn, 2(n)/a
Z(th)p
This standard is proposed and managed by the Xi'an Electric Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. This standard is drafted by the Xi'an Electric Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. The main drafter of this standard is Qin Xianman.2(n)/a
Z(th)p
This standard is proposed and managed by Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. This standard is drafted by Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. The main drafter of this standard is Qin Xianman.
Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.