SJ/T 1148-1993 Test method for breakdown strength of organic films for capacitors SJ/T1148-1993 Standard download decompression password: www.bzxz.net

Electronic Industry Standard of the People's Republic of China
SI/T 1145~-114893
Electrical properties of organic thin films for capacitors
Test methods
Test methods tor eleclrical perforrancesnf nrgani: film for use in capacitors1993-12-17Promulgated
Implemented on 1994-06-01
Promulgated by the Ministry of Electronics Industry of the People's Republic of China Electronic Industry Standard of the People's Republic of China
Test method for breakdown strength of organic thin films for capacitorsTeat mrfbod fur lurcakdown streagth af arganiefilm [or use In capacitors
Subject content and scope of application
1. 1 Subject content
This standard specifies the test method for breakdown strength of organic thin films for capacitors. 1.2 Scope of application
SI/T 1148—93
S1118—
This standard is applicable to the determination of AC and DC breakdown strength of organic thin films for capacitors with a diameter of 2-50 μm under normal induction conditions or at room temperature.
2 Reference standards
S1/T1145 General rules for electrical properties test methods of organic thin films for capacitors 3 Key points of the method
This method is to use a continuous and evenly-charged square to break down the sample, and calculate the breakdown strength based on the breakdown length and thickness change of the sample.
4 Test specimens
4.1 Sample sampling. The product size is 1m10m and the width is less than 100mm. The sample is single layer, and each group consists of 10 samples.Www.bzxZ.net
4.2 Test specimen requirements and test conditions are in accordance with the relevant provisions of S factory 1145. 5 Test chamber instrument
5.1 The unpowered device should have AC and DC power supply, and the test temperature should be ±4%. 5.2 The voltage between the zinc electrode at the high voltage end of the high temperature oven and the box shell should be no less than 5% kV. The temperature inside should be uniform, and the maximum voltage should not exceed ±2℃.
6 Electrodes
6.1 Ball-to-ball contact board
Approved by the Ministry of Electronics Industry of the People's Republic of China on December 17, 1993 and implemented on June 1, 1994
5.1/T 1148- 93
The upper electrode is a spherical electrode with a diameter of 20m, made of brass or stainless steel a
b, and the lower electrode is a flat plate electrode with a diameter of 5m, made of brass or stainless steel, with a rough working surface and an allowable value of .8m
6.2 Plate-to-plate control
. The upper electrode diameter is 25±0.5mm, the edge is standard, the radius of curvature is 2.50.2mm, and the height is not less than 25mm (there is controversy, the height is 10mm). The electrode material is yellow, and the working surface roughness R, the maximum allowable value is ,8mm. z. The electrode is a flat electrode with a diameter of 50mm. The maximum allowable value of the workpiece roughness R. is 0.%um. The working surfaces of the upper and lower electrodes are covered with a conductive rubber or a conductive chain electrode with a thickness of about m and a Shore hardness of H70 (the size of the sheet depends on the needs of use, and it is recommended to use: 50mm×159mm), and are wrapped with an aluminum foil with a thickness of less than 10ml and placed on a metal plate of the same size and thickness of about 3mm. The electrode surface should be smooth, flat and free of folding. When the product width is larger and arc breakdown occurs, anti-flying tension should be added. Test steps: Place the sample between the upper and lower electrodes, use the reverse voltage-rising method with a rate of 1C800V/a to make the voltage rise evenly from the beginning to the test breakdown. Control the average breakdown time to be 10.~20%, record the breakdown voltage b, and do one point of each sample in this way to test one test group c. Test the sample thickness at the nearest points, measure at least three points with an accuracy of 0.2mm, and take the total arithmetic average as the thickness of the sample.
8 Calculation of test results
Breakdown strength is calculated by the following formula: breakdown strength, Y/m
Breakdown voltage, V
Test results are expressed as the arithmetic mean of the breakdown strength at each point, taking three valid values ​​and listing the center values, with additional instructions.
This standard is prepared by the Standardization Research Institute of the Ministry of Electronics Industry. The main drafters of this standard are Zhang Xiaohong, Ye Shixin and Zhou Rong. This standard was issued in June 1977.
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