This specification specifies the detailed requirements for the T3DK102 type NPN silicon low-power switching transistor (hereinafter referred to as the device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices". SJ 20055-1992 Semiconductor Discrete Device 3DK102 Type NPN Silicon Low-Power Switching Transistor Detailed Specification SJ20055-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for the T3DK102 type NPN silicon low-power switching transistor (hereinafter referred to as the device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices".

GB 4587-1984 Test methods for bipolar transistors
GB 7092-1986 Outer dimensions of semiconductor integrated circuits
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices

1 Scope
People's Republic of China Electronic Industry Military Standard Semiconductor Discrete Devices
3DK102 Type NPN Silicon Low Power Switching Transistor, Detailed Specification
Semiconductor discrcte deviceDetall specification for silicon NPN low power switching transistor of type 3DK1021.1 Subject Content
SJ20055—92
This specification specifies the detailed requirements for 3DK102 type NPN silicon low power switching transistor (hereinafter referred to as device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices".
China Electronics Industry Corporation
Issued on November 19, 1992
Implemented on May 1, 1993
1.2 Dimensions
SJ2005592
The dimensions should conform to the A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1;
Terminal polarity:
1. Emitter||tt| |3. Collector
Figure 1 Dimensions
A3-01B
1.3 Maximum Ratings
3DK102A
3DK102B
3DK102C
3DK102D
Te=25℃
SJ20055—92
Note: 1) When TA>25℃, derate linearly at a rate of 1.7mW/℃. 2) When T>25℃, derate linearly at a rate of 6.3mW/℃. 1.4 Main electrical characteristics (TA—25℃）
3DK102A
3DK102B
3DK102C
3DK102D
3DK102A
3DK102B
3DK102C
3DK102D
3DK102A
3DK102B
3DK102C
3DK102D
Ie=1mA
Minimum value
Maximum value
Veg=10V
le=20mA
f=100MHz
Minimum value||t t||Max value
lc=30mA
Ig-3mA
Min value
Max value
hr(V1V)
le=10mA
Min value
Max value
f-1MHz
Vea-10V
Min value
Max value
VeEane
lc50mA
Ig=5mA
Min value
Max value
le30mA
Min value
Max value
le=30mA
Min value
Max value||tt ||VBE(an
le=30mA
Minimum value
Maximum value
-65~+200
le-50mA
Minimum value
Maximum value
le=30mA
1m=13mA
Minimum value
Maximum value
VaE(an)2
le-50mA
Minimum value
Maximum value
2References
SJ20055-92
GB4587-—84 Bipolar transistor test method Semiconductor discrete device dimensions
GB7581—87||t t||GJB33—85
General Specification for Discrete Semiconductor Devices
GJB128—86 Test Methods for Discrete Semiconductor Devices 3 Requirements
3.1 Detailed Requirements
All requirements shall comply with the provisions of GJB33 and this specification. 3.2 Design, Structure and Dimensions
The design, structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal Material and Coating
The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or tin-free. The selection of terminal material and coating requirements or other requirements shall be clearly specified in the contract or order (see Chapter 6). 3.3 Marking
The marking of the device shall comply with the provisions of GJB33.
4 Quality Assurance Provisions
4.1 Sampling and Inspection
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification Inspection
Qualification Inspection shall be in accordance with the provisions of GJB33.
4.3 Screening (GT and GCT Grade Only)
Screening shall be in accordance with Table 2 of GJB33 and this specification. The following tests shall be performed in accordance with Table 1 of this specification, and devices exceeding the specified limit values ​​shall not be accepted.
(See Table 2 of GJB33)
Intermediate parameter test
Power aging
Final test
4.3.1 Power aging conditions
TA=25±3℃
VcB-10V
Test or experiment
IesleH and hrEs
See 4.3.1
Group A2 of Table 1 of this specification;
AIcRO:=100% of the initial value or 20mA, whichever is greater Ahr3-initial value ±20%
P-300mW
SJ20055--92
Note: It is not allowed to add a heat sink or forced air cooling to the device. 4.4 Quality consistency inspection
Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A inspection
Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B inspection
Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification.
4.4.3 Group C inspection
Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions: 4.5.1 Pulse test
The pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB128. Table 1 Group A Inspection
Inspection or Test
Group A1
Appearance and Mechanical Inspection
Group A2
Collector-Base Breakdown Voltage
3DK102A.C
3DK102B, D
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
3DK102A.C
3DK102B, D
Collector-Emitter Breakdown Voltage
3DK102A.C
3DK102B, D
Collector-Base Cut-off Current
3DK102A.C
3DK102B, D
GJB128
This specification
Appendix A
This specification
Appendix A
GB4587
Emitter-base open circuit
le=10μA
Collector-base open circuit
Ig-10A
Emitter-base open circuit| |tt||le100mA
Emitter-base open
le=ImA
Emitter-base open
Vcg15V
Vch=25V
LTPD symbol
Vencwo
VR>ERO
VeHRICEOI
Limit value
Minimum value Maximum value
VaRCEO
Inspection or test
Emitter-base cutoff current
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Collector-emitter saturation voltage drop
Collector-emitter saturation voltage drop
Base-emitter saturation voltage drop||t t||Base-emitter saturation voltage drop
A3 group
High temperature operation:
Collector-base cut-off current
3DK102A.C
3DK102BD
Low temperature operation,
Forward current transfer ratio
A4 group
Characteristic frequency
Open-circuit output capacitance
When saturated
Saturation off time
3DK102A.B
3DK102C.D
A5, A6 and A7 group
Not applicable
SJ20055—92
Continued Table 1
GB4587
Collector-base open circuit
Ve-1V,le-ImA
Ver -1V,le-10mA
Vcg=1V..le=30mA
Vee=1V.le50mA
Ie-30mAIg-3mA
lc=50mAI=5mA
Ic=30mAI=3mA
le=50mAI5mA
TA=+150℃
Emission is -Base openWww.bzxZ.net
Vc-15V
VeR-25V
Ve:=1V,lc=30mA
Vcx10V,le-20mA
f=100MHz
Vea=10V,Ig0
f=1MHz
l-30nAl-3mA
le=30mA||t t||LTPP Symbol
Vce(at)s
Vesias
VgEat)s
Limiting Value
Minimum Value
Maximum Value
Group B1
Solderability
Inspection or Test
Durability of Marking
Group B2
Thermal Shock (Temperature Cycle)||tt| |a. Fine leak check
b. Rough leak check
Final test:
B3 group
Steady-state working life
Final test:
B4 group
Visual inspection inside the opening cap
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life| |tt||(Not working)
Final test:
SJ20055—92
Table 2 Group B test
GJB128
See Table 4, steps 1, 3 and 4
Ve=10VPu=300mW
Ta-25±3℃
It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5||tt| |Visual inspection standard is based on the design at the time of identification
Ta=200℃
See Table 4. Report steps 2 and 5
Each batch of devices, 0 failure
20(C=0)
Inspection or test
C1 group
Outline dimensions
C2 group
Thermal shock (glass stress)
Lead terminal strength
a. Detailed inspection of filling
b. Rough leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ20055—92
Table 3 Group C test
GJB128
See Figure 1
Test strip A
Test conditions E
See Table 4. Steps 1.3 and 4
See Table 4. Steps 1.3 and 4
T=25±3℃Ve=10V
Pu-300mW
It is not allowed to add a heat sink or
forced air cooling
See Table 4. Steps 2 and 5
Input=10
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cut-off current
3DK102A.C
3DK102BD||tt ||Collector-base cutoff current
3DK102A.C
3DK102B.D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20055—92
Table 4 Final test of group B and group C
GB4587
Emitter-base open circuit| |tt||Ve=15V
Ves-25V
Emitter-base open circuit
Vca=15V
Vca-25V
le=30mA
In=3mA
le=30mA
Te=30mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5
Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
Vegcatos
Ahergt
The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). Limit value
Minimum value
Initial value
Maximum value
SJ20055-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.C
3DK102BD
Low temperature operation,
Forward current transfer ratio
A4 group
Characteristic frequency
Open output capacitance
Saturation on time
Saturation off time
3DK102A.B
3DK102C.D
A5, A6 and A7 groups
Not applicable
SJ20055—92
Continued Table 1
GB4587
Collector-base open
Ve-1V,le-ImA
Ver- 1V,le-10mA
Vcg=1V..le=30mA
Vee=1V.le50mA
Ie-30mAIg-3mA
lc=50mAI=5mA
Ic=30mAI=3mA
le=50mAI5mA
TA=+150℃
Emitter is open-base
Vc-15V
VeR-25V
Ve:=1V,lc=30mA
Vcx10V,le-20mA
f=100MHz
Vea=10V,Ig0
f=1MHz
l-30nAl-3mA
le=30mA
LTPP symbol
Vce(at)s
Vesias
VgEat)s
Limiting value
Minimum value
Maximum value
B1 group
Solderability
Inspection or test
Durability of mark
B2 group
Thermal shock (temperature cycle)
a. Fine leak detection
b. Coarse leak detection||tt ||Final test:
Group B3
Steady-state working life
Final test:
Group B4
Visual inspection inside the open cap
(Design verification)
Bond strength
Group B5
Not applicable
Group B6
High temperature life
(Not working)
Final test:
SJ20055—92
Table 2 Group B inspection
GJB128
See Table 4, steps 1, 3 and 4
Ve=10VPu=300mW
T a-25±3℃
It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5
Visual inspection standard is based on the design at the time of identification
Ta=200℃
See Table 4. Report steps 2 and 5
Each batch of devices, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Lead end strength
a. Detailed inspection
b. Rough leak inspection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection| |tt||Final test:
Group C3
Variable frequency vibration
Constant acceleration
Final test:
Group C4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
SJ20055—92
Table 3 Group C inspection
GJB128
See Figure 1
Test strip A
Test condition E
See Table 4. Steps 1.3 and 4
See Table 4. Step 1.3 and 4
T=25±3℃Ve=10V
Pu-300mW
It is not allowed to add heat sink or
forced air cooling
See Table 4. Steps 2 and 5
Input=10
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cut-off current
3DK102A.C
3DK102BD
Collector-base cut-off current
3DK102A.C
3DK102B.D
Collector-emitter saturation voltage drop||t t||Forward current transfer ratio
Forward current transfer ratio
SJ20055—92
Table 4 Final test of Group B and Group C
GB4587
Emitter-base open circuit
Ve=15V
Ves-25V
Emitter-base open circuit
Vca=15V
Vca-25V
le=30mA
In=3mA
le=30mA
Te=30mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5
Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
Vegcatos
Ahergt
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit values
Minimum values
Initial values
Maximum values
SJ20055-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of a transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.C
3DK102BD
Low temperature operation,
Forward current transfer ratio
A4 group
Characteristic frequency
Open output capacitance
Saturation on time
Saturation off time
3DK102A.B
3DK102C.D
A5, A6 and A7 groups
Not applicable
SJ20055—92
Continued Table 1
GB4587
Collector-base open
Ve-1V,le-ImA
Ver- 1V,le-10mA
Vcg=1V..le=30mA
Vee=1V.le50mA
Ie-30mAIg-3mA
lc=50mAI=5mA
Ic=30mAI=3mA
le=50mAI5mA
TA=+150℃
Emitter is open-base
Vc-15V
VeR-25V
Ve:=1V,lc=30mA
Vcx10V,le-20mA
f=100MHz
Vea=10V,Ig0
f=1MHz
l-30nAl-3mA
le=30mA
LTPP symbol
Vce(at)s
Vesias
VgEat)s
Limiting value
Minimum value
Maximum value
B1 group
Solderability
Inspection or test
Durability of mark
B2 group
Thermal shock (temperature cycle)
a. Fine leak detection
b. Coarse leak detection||tt ||Final test:
Group B3
Steady-state working life
Final test:
Group B4
Visual inspection inside the open cap
(Design verification)
Bond strength
Group B5
Not applicable
Group B6
High temperature life
(Not working)
Final test:
SJ20055—92
Table 2 Group B inspection
GJB128
See Table 4, steps 1, 3 and 4
Ve=10VPu=300mW
T a-25±3℃
It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5
Visual inspection standard is based on the design at the time of identification
Ta=200℃
See Table 4. Report steps 2 and 5
Each batch of devices, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Lead end strength
a. Detailed inspection
b. Rough leak inspection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection| |tt||Final test:
Group C3
Variable frequency vibration
Constant acceleration
Final test:
Group C4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
SJ20055—92
Table 3 Group C inspection
GJB128
See Figure 1
Test strip A
Test condition E
See Table 4. Steps 1.3 and 4
See Table 4. Step 1.3 and 4
T=25±3℃Ve=10V
Pu-300mW
It is not allowed to add heat sink or
forced air cooling
See Table 4. Steps 2 and 5
Input=10
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cut-off current
3DK102A.C
3DK102BD
Collector-base cut-off current
3DK102A.C
3DK102B.D
Collector-emitter saturation voltage drop||t t||Forward current transfer ratio
Forward current transfer ratio
SJ20055—92
Table 4 Final test of Group B and Group C
GB4587
Emitter-base open circuit
Ve=15V
Ves-25V
Emitter-base open circuit
Vca=15V
Vca-25V
le=30mA
In=3mA
le=30mA
Te=30mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5
Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
Vegcatos
Ahergt
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit values
Minimum values
Initial values
Maximum values
SJ20055-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of a transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.Rough leak detection
Final test:
B3 group
Steady-state working life
Final test:
B4 group
Visual inspection inside the opening cap
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)|| tt||Final test:
SJ20055—92
Table 2 Group B test
GJB128
See Table 4, steps 1, 3 and 4
Ve=10VPu=300mW
Ta-25±3℃
It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5
Visual inspection standard is as per the appraisal Design
Ta=200℃
See Table 4. Report steps 2 and 5
Each batch of devices, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Lead end strength
a. Detailed inspection
b. Rough leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Stable Working life
Final test:
SJ20055—92
Table 3 Group C test
GJB128
See Figure 1
Test strip A
Test condition E
See Table 4. Steps 1.3 and 4
See Table 4. Steps 1.3 and 4
T=25±3℃Ve=10V||tt| |Pu-300mW
It is not allowed to add a heat sink or
forced air cooling
See Table 4. Steps 2 and 5
Input=10
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cutoff current
3DK102A.C
3DK102BD
Collector Electrode-base cut-off current
3DK102A.C
3DK102B.D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20055—92
Table 4 Final test of group B and group C
GB4587
Emitter-base open circuit|| tt||Ve=15V
Ves-25V
Emitter-base open circuit
Vca=15V
Vca-25V
le=30mA
In=3mA
le=30mA
Te=30mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5
Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
Vegcatos
Ahergt
The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). Limit value
Minimum value
Initial value
Maximum value
SJ20055-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.Rough leak detection
Final test:
B3 group
Steady-state working life
Final test:
B4 group
Visual inspection inside the opening cap
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)|| tt||Final test:
SJ20055—92
Table 2 Group B test
GJB128
See Table 4, steps 1, 3 and 4
Ve=10VPu=300mW
Ta-25±3℃
It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5
Visual inspection standard is as per the appraisal Design
Ta=200℃
See Table 4. Report steps 2 and 5
Each batch of devices, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Lead end strength
a. Detailed inspection
b. Rough leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Stable Working life
Final test:
SJ20055—92
Table 3 Group C test
GJB128
See Figure 1
Test strip A
Test condition E
See Table 4. Steps 1.3 and 4
See Table 4. Steps 1.3 and 4
T=25±3℃Ve=10V||tt| |Pu-300mW
It is not allowed to add a heat sink or
forced air cooling
See Table 4. Steps 2 and 5
Input=10
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cutoff current
3DK102A.C
3DK102BD
Collector Electrode-base cut-off current
3DK102A.C
3DK102B.D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20055—92
Table 4 Final test of group B and group C
GB4587
Emitter-base open circuit|| tt||Ve=15V
Ves-25V
Emitter-base open circuit
Vca=15V
Vca-25V
le=30mA
In=3mA
le=30mA
Te=30mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5
Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
Vegcatos
Ahergt
The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). Limit value
Minimum value
Initial value
Maximum value
SJ20055-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.1). Limit value
Minimum value
Initial value
Maximum value
SJ20055-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition that the emitter-base is open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.1). Limit value
Minimum value
Initial value
Maximum value
SJ20055-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition that the emitter-base is open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.
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