title>Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK102 - SJ 20055-1992 - Chinese standardNet - bzxz.net
Home > SJ > Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK102
Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK102
Basic Information
Standard ID:
SJ 20055-1992
Standard Name:Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK102
This specification specifies the detailed requirements for the T3DK102 type NPN silicon low-power switching transistor (hereinafter referred to as the device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices". SJ 20055-1992 Semiconductor Discrete Device 3DK102 Type NPN Silicon Low-Power Switching Transistor Detailed Specification SJ20055-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for the T3DK102 type NPN silicon low-power switching transistor (hereinafter referred to as the device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices".
GB 4587-1984 Test methods for bipolar transistors
GB 7092-1986 Outer dimensions of semiconductor integrated circuits
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices
Some standard content:
1 Scope People's Republic of China Electronic Industry Military Standard Semiconductor Discrete Devices 3DK102 Type NPN Silicon Low Power Switching Transistor, Detailed Specification Semiconductor discrcte deviceDetall specification for silicon NPN low power switching transistor of type 3DK1021.1 Subject Content SJ20055—92 This specification specifies the detailed requirements for 3DK102 type NPN silicon low power switching transistor (hereinafter referred to as device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices". China Electronics Industry Corporation Issued on November 19, 1992 Implemented on May 1, 1993 1.2 Dimensions SJ2005592 The dimensions should conform to the A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1; Terminal polarity: 1. Emitter||tt| |3. Collector Figure 1 Dimensions A3-01B 1.3 Maximum Ratings 3DK102A 3DK102B 3DK102C 3DK102D Te=25℃ SJ20055—92 Note: 1) When TA>25℃, derate linearly at a rate of 1.7mW/℃. 2) When T>25℃, derate linearly at a rate of 6.3mW/℃. 1.4 Main electrical characteristics (TA—25℃) 3DK102A 3DK102B 3DK102C 3DK102D 3DK102A 3DK102B 3DK102C 3DK102D 3DK102A 3DK102B 3DK102C 3DK102D Ie=1mA Minimum value Maximum value Veg=10V le=20mA f=100MHz Minimum value||t t||Max value lc=30mA Ig-3mA Min value Max value hr(V1V) le=10mA Min value Max value f-1MHz Vea-10V Min value Max value VeEane lc50mA Ig=5mA Min value Max value le30mA Min value Max value le=30mA Min value Max value||tt ||VBE(an le=30mA Minimum value Maximum value -65~+200 le-50mA Minimum value Maximum value le=30mA 1m=13mA Minimum value Maximum value VaE(an)2 le-50mA Minimum value Maximum value 2References SJ20055-92 GB4587-—84 Bipolar transistor test method Semiconductor discrete device dimensions GB7581—87||t t||GJB33—85 General Specification for Discrete Semiconductor Devices GJB128—86 Test Methods for Discrete Semiconductor Devices 3 Requirements 3.1 Detailed Requirements All requirements shall comply with the provisions of GJB33 and this specification. 3.2 Design, Structure and Dimensions The design, structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal Material and Coating The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or tin-free. The selection of terminal material and coating requirements or other requirements shall be clearly specified in the contract or order (see Chapter 6). 3.3 Marking The marking of the device shall comply with the provisions of GJB33. 4 Quality Assurance Provisions 4.1 Sampling and Inspection Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification Inspection Qualification Inspection shall be in accordance with the provisions of GJB33. 4.3 Screening (GT and GCT Grade Only) Screening shall be in accordance with Table 2 of GJB33 and this specification. The following tests shall be performed in accordance with Table 1 of this specification, and devices exceeding the specified limit values shall not be accepted. (See Table 2 of GJB33) Intermediate parameter test Power aging Final test 4.3.1 Power aging conditions TA=25±3℃ VcB-10V Test or experiment IesleH and hrEs See 4.3.1 Group A2 of Table 1 of this specification; AIcRO:=100% of the initial value or 20mA, whichever is greater Ahr3-initial value ±20% P-300mW SJ20055--92 Note: It is not allowed to add a heat sink or forced air cooling to the device. 4.4 Quality consistency inspection Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A inspection Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B inspection Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification. 4.4.3 Group C inspection Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification. 4.5 Inspection and test methods Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions: 4.5.1 Pulse test The pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB128. Table 1 Group A Inspection Inspection or Test Group A1 Appearance and Mechanical Inspection Group A2 Collector-Base Breakdown Voltage 3DK102A.C 3DK102B, D Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage 3DK102A.C 3DK102B, D Collector-Emitter Breakdown Voltage 3DK102A.C 3DK102B, D Collector-Base Cut-off Current 3DK102A.C 3DK102B, D GJB128 This specification Appendix A This specification Appendix A GB4587 Emitter-base open circuit le=10μA Collector-base open circuit Ig-10A Emitter-base open circuit| |tt||le100mA Emitter-base open le=ImA Emitter-base open Vcg15V Vch=25V LTPD symbol Vencwo VR>ERO VeHRICEOI Limit value Minimum value Maximum value VaRCEO Inspection or test Emitter-base cutoff current Forward current transfer ratio Forward current transfer ratiowwW.bzxz.Net Forward current transfer ratio Collector-emitter saturation voltage drop Collector-emitter saturation voltage drop Base-emitter saturation voltage drop||t t||Base-emitter saturation voltage drop A3 group High temperature operation: Collector-base cut-off current 3DK102A.C 3DK102BD Low temperature operation, Forward current transfer ratio A4 group Characteristic frequency Open-circuit output capacitance When saturated Saturation off time 3DK102A.B 3DK102C.D A5, A6 and A7 group Not applicable SJ20055—92 Continued Table 1 GB4587 Collector-base open circuit Ve-1V,le-ImA Ver -1V,le-10mA Vcg=1V..le=30mA Vee=1V.le50mA Ie-30mAIg-3mA lc=50mAI=5mA Ic=30mAI=3mA le=50mAI5mA TA=+150℃ Emission is -Base open Vc-15V VeR-25V Ve:=1V,lc=30mA Vcx10V,le-20mA f=100MHz Vea=10V,Ig0 f=1MHz l-30nAl-3mA le=30mA||t t||LTPP Symbol Vce(at)s Vesias VgEat)s Limiting Value Minimum Value Maximum Value Group B1 Solderability Inspection or Test Durability of Marking Group B2 Thermal Shock (Temperature Cycle)||tt| |a. Fine leak check b. Rough leak check Final test: B3 group Steady-state working life Final test: B4 group Visual inspection inside the opening cap (Design verification) Bond strength B5 group Not applicable B6 group High temperature life| |tt||(Not working) Final test: SJ20055—92 Table 2 Group B test GJB128 See Table 4, steps 1, 3 and 4 Ve=10VPu=300mW Ta-25±3℃ It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5||tt| |Visual inspection standard is based on the design at the time of identification Ta=200℃ See Table 4. Report steps 2 and 5 Each batch of devices, 0 failure 20(C=0) Inspection or test C1 group Outline dimensions C2 group Thermal shock (glass stress) Lead terminal strength a. Detailed inspection of filling b. Rough leak detection Comprehensive temperature/humidity cycle test Appearance and mechanical inspection Final test: C3 group Variable frequency vibration Constant acceleration Final test: C4 group Salt gas (when applicable) C5 group Not applicable C6 group Steady-state working life Final test: SJ20055—92 Table 3 Group C test GJB128 See Figure 1 Test strip A Test conditions E See Table 4. Steps 1.3 and 4 See Table 4. Steps 1.3 and 4 T=25±3℃Ve=10V Pu-300mW It is not allowed to add a heat sink or forced air cooling See Table 4. Steps 2 and 5 Input=10 Limit value Minimum value Maximum value Inspection or test Collector-base cut-off current 3DK102A.C 3DK102BD||tt ||Collector-base cutoff current 3DK102A.C 3DK102B.D Collector-emitter saturation voltage drop Forward current transfer ratio Forward current transfer ratio SJ20055—92 Table 4 Final test of group B and group C GB4587 Emitter-base open circuit| |tt||Ve=15V Ves-25V Emitter-base open circuit Vca=15V Vca-25V le=30mA In=3mA le=30mA Te=30mA Note: 1) For this test, devices exceeding the limit values of Group A shall not be accepted. 5 Delivery preparation Packing requirements shall be in accordance with the provisions of GJB33. 6 Notes Vegcatos Ahergt The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). Limit value Minimum value Initial value Maximum value SJ20055-92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit The test circuit is shown in Figure A1. Voltage source A3 Steps Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.C 3DK102BD Low temperature operation, Forward current transfer ratio A4 group Characteristic frequency Open output capacitance Saturation on time Saturation off time 3DK102A.B 3DK102C.D A5, A6 and A7 groups Not applicable SJ20055—92 Continued Table 1 GB4587 Collector-base open Ve-1V,le-ImA Ver- 1V,le-10mA Vcg=1V..le=30mA Vee=1V.le50mA Ie-30mAIg-3mA lc=50mAI=5mA Ic=30mAI=3mA le=50mAI5mA TA=+150℃ Emitter is open-base Vc-15V VeR-25V Ve:=1V,lc=30mA Vcx10V,le-20mA f=100MHz Vea=10V,Ig0 f=1MHz l-30nAl-3mA le=30mA LTPP symbol Vce(at)s Vesias VgEat)s Limiting value Minimum value Maximum value B1 group Solderability Inspection or test Durability of mark B2 group Thermal shock (temperature cycle) a. Fine leak detection b. Coarse leak detection||tt ||Final test: Group B3 Steady-state working life Final test: Group B4 Visual inspection inside the open cap (Design verification) Bond strength Group B5 Not applicable Group B6 High temperature life (Not working) Final test: SJ20055—92 Table 2 Group B inspection GJB128 See Table 4, steps 1, 3 and 4 Ve=10VPu=300mW T a-25±3℃ It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5 Visual inspection standard is based on the design at the time of identification Ta=200℃ See Table 4. Report steps 2 and 5 Each batch of devices, 0 failure 20(C=0) Inspection or test C1 group Dimensions C2 group Thermal shock (glass stress) Lead end strength a. Detailed inspection b. Rough leak inspection Comprehensive temperature/humidity cycle test Appearance and mechanical inspection| |tt||Final test: Group C3 Variable frequency vibration Constant acceleration Final test: Group C4 Salt gas (when applicable) Group C5 Not applicable Group C6 Steady-state working life Final test: SJ20055—92 Table 3 Group C inspection GJB128 See Figure 1 Test strip A Test condition E See Table 4. Steps 1.3 and 4 See Table 4. Step 1.3 and 4 T=25±3℃Ve=10V Pu-300mW It is not allowed to add heat sink or forced air cooling See Table 4. Steps 2 and 5 Input=10 Limit value Minimum value Maximum value Inspection or test Collector-base cut-off current 3DK102A.C 3DK102BD Collector-base cut-off current 3DK102A.C 3DK102B.D Collector-emitter saturation voltage drop||t t||Forward current transfer ratio Forward current transfer ratio SJ20055—92 Table 4 Final test of Group B and Group C GB4587 Emitter-base open circuit Ve=15V Ves-25V Emitter-base open circuit Vca=15V Vca-25V le=30mA In=3mA le=30mA Te=30mA Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation Packing requirements shall be in accordance with the provisions of GJB33. 6 Notes Vegcatos Ahergt The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit values Minimum values Initial values Maximum values SJ20055-92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of a transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit The test circuit is shown in Figure A1. Voltage source A3 Steps Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.C 3DK102BD Low temperature operation, Forward current transfer ratio A4 group Characteristic frequency Open output capacitance Saturation on time Saturation off time 3DK102A.B 3DK102C.D A5, A6 and A7 groups Not applicable SJ20055—92 Continued Table 1 GB4587 Collector-base open Ve-1V,le-ImA Ver- 1V,le-10mA Vcg=1V..le=30mA Vee=1V.le50mA Ie-30mAIg-3mA lc=50mAI=5mA Ic=30mAI=3mA le=50mAI5mA TA=+150℃ Emitter is open-base Vc-15V VeR-25V Ve:=1V,lc=30mA Vcx10V,le-20mA f=100MHz Vea=10V,Ig0 f=1MHz l-30nAl-3mA le=30mA LTPP symbol Vce(at)s Vesias VgEat)s Limiting value Minimum value Maximum value B1 group Solderability Inspection or test Durability of mark B2 group Thermal shock (temperature cycle) a. Fine leak detection b. Coarse leak detection||tt ||Final test: Group B3 Steady-state working life Final test: Group B4 Visual inspection inside the open cap (Design verification) Bond strength Group B5 Not applicable Group B6 High temperature life (Not working) Final test: SJ20055—92 Table 2 Group B inspection GJB128 See Table 4, steps 1, 3 and 4 Ve=10VPu=300mW T a-25±3℃ It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5 Visual inspection standard is based on the design at the time of identification Ta=200℃ See Table 4. Report steps 2 and 5 Each batch of devices, 0 failure 20(C=0) Inspection or test C1 group Dimensions C2 group Thermal shock (glass stress) Lead end strength a. Detailed inspection b. Rough leak inspection Comprehensive temperature/humidity cycle test Appearance and mechanical inspection| |tt||Final test: Group C3 Variable frequency vibration Constant acceleration Final test: Group C4 Salt gas (when applicable) Group C5 Not applicable Group C6 Steady-state working life Final test: SJ20055—92 Table 3 Group C inspection GJB128 See Figure 1 Test strip A Test condition E See Table 4. Steps 1.3 and 4 See Table 4. Step 1.3 and 4 T=25±3℃Ve=10V Pu-300mW It is not allowed to add heat sink or forced air cooling See Table 4. Steps 2 and 5 Input=10 Limit value Minimum value Maximum value Inspection or test Collector-base cut-off current 3DK102A.C 3DK102BD Collector-base cut-off current 3DK102A.C 3DK102B.D Collector-emitter saturation voltage drop||t t||Forward current transfer ratio Forward current transfer ratio SJ20055—92 Table 4 Final test of Group B and Group C GB4587 Emitter-base open circuit Ve=15V Ves-25V Emitter-base open circuit Vca=15V Vca-25V le=30mA In=3mA le=30mA Te=30mA Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation Packing requirements shall be in accordance with the provisions of GJB33. 6 Notes Vegcatos Ahergt The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit values Minimum values Initial values Maximum values SJ20055-92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of a transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit The test circuit is shown in Figure A1. Voltage source A3 Steps Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.Rough leak detection Final test: B3 group Steady-state working life Final test: B4 group Visual inspection inside the opening cap (Design verification) Bond strength B5 group Not applicable B6 group High temperature life (Not working)|| tt||Final test: SJ20055—92 Table 2 Group B test GJB128 See Table 4, steps 1, 3 and 4 Ve=10VPu=300mW Ta-25±3℃ It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5 Visual inspection standard is as per the appraisal Design Ta=200℃ See Table 4. Report steps 2 and 5 Each batch of devices, 0 failure 20(C=0) Inspection or test C1 group Dimensions C2 group Thermal shock (glass stress) Lead end strength a. Detailed inspection b. Rough leak detection Comprehensive temperature/humidity cycle test Appearance and mechanical inspection Final test: C3 group Variable frequency vibration Constant acceleration Final test: C4 group Salt gas (when applicable) C5 group Not applicable C6 group Stable Working life Final test: SJ20055—92 Table 3 Group C test GJB128 See Figure 1 Test strip A Test condition E See Table 4. Steps 1.3 and 4 See Table 4. Steps 1.3 and 4 T=25±3℃Ve=10V||tt| |Pu-300mW It is not allowed to add a heat sink or forced air cooling See Table 4. Steps 2 and 5 Input=10 Limit value Minimum value Maximum value Inspection or test Collector-base cutoff current 3DK102A.C 3DK102BD Collector Electrode-base cut-off current 3DK102A.C 3DK102B.D Collector-emitter saturation voltage drop Forward current transfer ratio Forward current transfer ratio SJ20055—92 Table 4 Final test of group B and group C GB4587 Emitter-base open circuit|| tt||Ve=15V Ves-25V Emitter-base open circuit Vca=15V Vca-25V le=30mA In=3mA le=30mA Te=30mA Note: 1) For this test, devices exceeding the limit values of Group A shall not be accepted. 5 Delivery preparation Packing requirements shall be in accordance with the provisions of GJB33. 6 Notes Vegcatos Ahergt The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). Limit value Minimum value Initial value Maximum value SJ20055-92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit The test circuit is shown in Figure A1. Voltage source A3 Steps Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.Rough leak detection Final test: B3 group Steady-state working life Final test: B4 group Visual inspection inside the opening cap (Design verification) Bond strength B5 group Not applicable B6 group High temperature life (Not working)|| tt||Final test: SJ20055—92 Table 2 Group B test GJB128 See Table 4, steps 1, 3 and 4 Ve=10VPu=300mW Ta-25±3℃ It is not allowed to add heat sink or forced air cooling to the device. See Table 4, steps 2 and 5 Visual inspection standard is as per the appraisal Design Ta=200℃ See Table 4. Report steps 2 and 5 Each batch of devices, 0 failure 20(C=0) Inspection or test C1 group Dimensions C2 group Thermal shock (glass stress) Lead end strength a. Detailed inspection b. Rough leak detection Comprehensive temperature/humidity cycle test Appearance and mechanical inspection Final test: C3 group Variable frequency vibration Constant acceleration Final test: C4 group Salt gas (when applicable) C5 group Not applicable C6 group Stable Working life Final test: SJ20055—92 Table 3 Group C test GJB128 See Figure 1 Test strip A Test condition E See Table 4. Steps 1.3 and 4 See Table 4. Steps 1.3 and 4 T=25±3℃Ve=10V||tt| |Pu-300mW It is not allowed to add a heat sink or forced air cooling See Table 4. Steps 2 and 5 Input=10 Limit value Minimum value Maximum value Inspection or test Collector-base cutoff current 3DK102A.C 3DK102BD Collector Electrode-base cut-off current 3DK102A.C 3DK102B.D Collector-emitter saturation voltage drop Forward current transfer ratio Forward current transfer ratio SJ20055—92 Table 4 Final test of group B and group C GB4587 Emitter-base open circuit|| tt||Ve=15V Ves-25V Emitter-base open circuit Vca=15V Vca-25V le=30mA In=3mA le=30mA Te=30mA Note: 1) For this test, devices exceeding the limit values of Group A shall not be accepted. 5 Delivery preparation Packing requirements shall be in accordance with the provisions of GJB33. 6 Notes Vegcatos Ahergt The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). Limit value Minimum value Initial value Maximum value SJ20055-92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit The test circuit is shown in Figure A1. Voltage source A3 Steps Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.1). Limit value Minimum value Initial value Maximum value SJ20055-92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit The test circuit is shown in Figure A1. Voltage source A3 Steps Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition that the emitter-base is open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012.1). Limit value Minimum value Initial value Maximum value SJ20055-92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit The test circuit is shown in Figure A1. Voltage source A3 Steps Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition that the emitter-base is open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(BR>CEO, the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01012. Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.