Some standard content:
ur621-382.213:001.4
National Standard of the People's Republic of China
GB/T2900.3294
Electrical terminology
Power semiconductor device
Electrotechnical terminologyPower semiconductor device
Published on 1994-05-16
State Administration of Technical Supervision
Implemented on 1995-01-01
National Standard of the People's Republic of China
Electrical terminology
Power semiconductor device
Electrotechnical terminologyPawer semiconductor device
GD/T 2900.32—94
With G 2900.32—82
The standard adopted is: International Electrotechnical Commission (C) publication 747 Neutron Devices and Edition 5521 International Electrotechnical Consultation: Semiconductor Devices and Integrated Circuits 3 Regarding Integrated Circuits, Product List, Product General Changes and Their Reverse Use, 1 Mainly within the scope of use
Small international standards are now set for the special technology of high-power conductor devices. Technical standards are difficult to apply. Formulate standards, compile technical documents, write and produce detailed professional manuals, technical books and periodicals. 2 Basic terminology
2.1 Physics terms
2.1.1 Semiconductor
A body with a resistivity that can be restored in a certain range and carries current within a certain range.
2.2 Intrinsic semiconductor im-insin:wrrrnnlucluir:" type flat conductor typesemiconzuctar·A high-purity conductor that conducts current under thermal equilibrium and has a density of movable holes that is almost equal to that of an ideal semiconductor. 2.1.3 Extrinsic conductor extrinsic semiconductor 3 Semiconductor A semiconductor in which the carrier concentration depends on impurities or other defects in the core. 2.1.4 N-type semiconductor N-type semiconductor electronic semiconductor semiconductor A non-intrinsic semiconductor with a significantly higher density of conduction electrons than active holes under thermal equilibrium. 2.1.5 P-type semiconductor P-type semiconductor A non-intrinsic semiconductor with a significantly higher density of active holes than conduction electrons under thermal equilibrium. 2.1.6 A transition zone between two regions with different electrical characteristics in the semiconductor or between the semiconductor and the metal. 2.1.7 PN A junction between the P-type region and the N-type region of a semiconductor. 2.1.8 Alloy junction A junction formed by alloying one or more metal materials with a semiconductor body. 2.1.9 Diffused junction A junction formed by the diffusion of impurities into a semiconductor product. 2.1.10 Grawn juriciun
A junction formed by the molten crystal of a semiconductor product. 2.1.11 Epitaxy
A junction formed by the deposition of a growth product on a semiconductor substrate. Approved by the State Administration of Technical Supervision on May 16, 1994 and implemented on January 1, 1995
2.1.12 Bonding junction
GB/T 2900.32
A junction formed by the direct bonding of two semiconductor products with different conductivity. 2.1-13 Wide junction: a junction with a small width of the charge region. 2.1.14 Proghessive junction: a junction with a concentration gradient whose width is about the same as the width of the charge region. 2.1-75 Ahmic junction: a junction with a non-ionic conductivity. 2.1.16 Impurity: an impurity atom in a compound semiconductor; an impurity atom in a compound semiconductor, or an atom that is more (or less) than the ideal ratio in the compound semiconductor. 2.1.17
conductors
conductors are electrons in the conduction band of a conductor under the action of an electric field or concentration. 2.1.18condactianurrenr
the action of an external electric field causes the directional movement of charge carriers in matter. 2.1.193
the phenomenon of positive charge carriers, the vacancies that appear in a normally full energy band, and the vacancies that carry current. 2.1.205
the phenomenon of positive charge carriers in a semiconductor. 2-1.21 Majority carriers are greater than (the majority of) the total number of free carriers. 2-1.22 Minority carriers are less than (the majority of) the total number of free carriers. 2.1.23 Excecarriers: Balanced carriers, the conduction electrons or holes with a number determined by the thermal equilibrium method: bulk carriers (minority carriers) 2.1.24 In the body of the equilibrium body, the time required for the excess carriers to reduce the rate of charge generation by 1/time of their initial value is called. 2.1.25 Pace charge (of the body) 2.1.26
A region where the net charge density is not high and the net charge density of the acceptor is high. 2.1.27
Avalanche breakdown (a semiconductor PN junction) 2.1.26
A region where the net charge density of the acceptor is high and the net charge density of the acceptor is low. 2.1.27
Avalanche breakdown (a semiconductor PN junction) 2.1.26
Avalanche breakdown (a semiconductor PN junction) 2.1.26
When a free carrier in a semiconductor gains energy and ionizes to generate a new electron-hole under the action of a strong electric field, the current is increased.
2.1.29 Avalanche voltage ... 2.1.33 Photovoltaic effect
produces a kind of photoelectric effect,
2.2 Terms
2.21 Semiconductor bed device) erinal (alemienduilurJeui) semiconductor device connected to the effective reverse point of your external conductor. 2-2.2 Terminal (card number device body) ierminal (otascmicondualnrdevice) used to note the conductive work of the device body to use the external conductor, 223 (your device) elrlefnfxeiwmluerardaice semiconductor device between the certain area and the terminal of the power supply sensitive point. 2.2.4 Direct (PN) fo:ward directinn (nf a PN junetiun) continuous (DC) current N junction attached to the reverse time. 2-2.5 reverse (P junction) reverxedireclion(oia[junclian) connection (direct current steam along the P period high group light moving direction, 2.2.6 (equivalent> junction retention! (vi:tunl) juutiortempcraturc based on the thermal and electrical calibration relationship of the semiconductor device through the electrical measurement of the junction temperature 2.2.7 new junction gain ratecjuurcicutenperalnre blue conductive device stop normal! When the teaching high junction gain temperature is allowed, at this temperature, all the relevant rated value characteristics should be guaranteed.
2.2.8 busy storage temperature slurakecemgcraturc semiconductor conductive device without certification 2-2.9 Thermal drop factor The percentage of the increase in the temperature of the tube shell due to the increase in the ambient temperature. 2.7.10 Tube temperature The temperature measured at the semiconductor device probe and the thermal fixed point. 2.2, 113
Accurate point feenwieperature
The temperature of the semiconductor device that is in close contact with the tube shell and the heat sink that can be measured by the engineer. 2.7.12 Fthjermalresistaucc
Under the condition of thermal stability, the temperature between two specified points (or areas) ) is the ratio of the temperature difference between the junction temperature of a semiconductor device and a specified point on the tube to the bonding power of the device. The heat dissipation is the ratio of the temperature difference between a specified point on the heat sink and the thermal power dissipated by the temperature difference at this point. The heat dissipation effect of the device will generate a certain amount of heat flow through the thermal barrier. 2.2.13 Thermal resistance Thermaiimp is the value of the thermal resistance of a semiconductor device at the end of a certain time interval. The temperature change between two specified points or areas at the end of a certain time interval is the value of the thermal resistance of the device at the beginning of the time interval. The thermal resistance of the device under pulse conditions is the value of the thermal resistance of the device under pulse conditions. edanceunde:pulsecoadicictsThe ratio of the maximum temperature difference between a given external reference point and humidity produced by a pulse generator to the power amplitude produced by a given periodic sequence of pulses in the device.
Over:V is the starting current for a given half of the time, and the pulse duration is the function of the duty cycle. 2.2.15 Capacitor (of a semiconductor device) Thermlcapacitance (of an electrical device) as the quotient of the difference between the junction temperature of the device and the humidity at a given external reference point, 3
GR/T 2900.32--94
2.2.16 (Equivalent) Capacitor
equivaientihermal netwcrk
. This paper specifically describes the thermal state and thermal stability of conductor devices under electrical conditions, including thermal resistance, thermal capacitance and heat flow source. This paper describes the analysis method of the equivalent electrical network. For calculating the temperature, please note that ① the total heat pool generated by the power consumption is determined by the equivalent thermal network. ① There should be only one equivalent network of energy sources as much as possible to make the energy watts "generated by the semiconductor industry" have all the special functions. 2.2,17 (equivalent thermal network heat capacity cguivaleattherus]erwarkchpacitaace and characterize the equivalent thermal network with the heat of the whole force: (equivalent) thermal network heat class equiva.entthermslnerwarkresistance2.2.18
a line table shows the ability of the equivalent thermal network to stop the heat flow) tightenpnssur(rorquc2. 2. 19
Assembly pressure and torque to ensure good contact between power semiconductor devices and heat sink: 2.3 Parts
2.3.1 Semiconductor devices semiconductordevices are special devices that carry non-conducting currents. 2-3-2 Power semiconductor devices semiconductor devices are mainly used in power systems, which include various diodes, gates, body materials, semiconductor modules, etc.
2.3-3 (Semiconductor) diode A two-terminal semiconductor device with two electrodes and asymmetric positive-current characteristics. 2.3.4 (Semiconductor rectifier diode) A semiconductor diode used for rectification and including mounting and cooling accessories (if any) connected to it. 2.3.5 Conductor stack A semiconductor rectifier stack A single packaged device with one or more rectifiers, together with its (its price) packaging shell and cooling accessories (if any) electrical junction and mechanical junction area.
2-3.6 Commercial rectifier stack Big voltage rectifier srac, a semiconductor rectifier that can withstand a reverse voltage of more than 200V. 2.3. (Ordinary rectifier (diode) rerifierdide has special requirements on reverse recovery time and reverse surge rate, and is used in power frequency rectifiers. 2.3.8 Avalanche rectifier (diode> avalanche rer:tificr dicde) A rectifier that has a certain breakdown characteristic and can withstand a certain reverse surge power within a specified time. 2.3.9 Controlled avalancberectifierdiade A rectifier that has a small amount of breakdown voltage and is fixed to operate stably in the reverse breakdown area. 2.3.10 Fast rectifier (diode> fesl Reverse recovery diode has a short recovery time and less recovery charge, and can operate at frequencies above 40Hz. 2.3.11
High-gain rectifier (diode) high temperature rectifierdindr A PN rectifier with a junction temperature of usually 175°C or higher. 2.3-12
A bistable semiconductor device with three or more junctions that can switch from the off state to the on state, or from the on state to the off state. Note: "reverse blocking diode" is a general term for all PNPN switching diodes. When it is not used or misunderstood, it can be used to indicate any device in the reverse blocking diode system, such as reverse blocking diode, which was previously known as a rectifier. 2-313 Reverse blocking diode - thyristor
F reverse blocking diode Thyristor is a two-terminal product that has a switching effect on the negative anode and only shows a reverse blocking state. GB/T 2900.32 94
2.3.14 This package (three-pole) is a brush tube revtrelalnicking triodethyristor is a blue-terminal product that has a switching effect on the negative anode and only shows a reverse blocking state. 2.3.5 (gate-off diode) A type of diode that has no special requirements on parameters such as long closing time, and uses reverse blocking triodes such as gates. 2.3.16 Fast (diode thyristor) A type of diode that has special requirements on parameters such as opening and closing time, and can be used in CGIz to block diodes. 2.3-7 Gate-off thyristor (GT gate, etc.) A three-terminal device that can be switched from the on state to the off state or from the off state to the on state by applying a special polarity gate. 2.3.1 Reverse conducting diode thyristor A type of diode that has a reverse conduction effect on the negative anode, and when the voltage level is higher than the on-state voltage, it can pass a large current. :rioie thyristor2.3.19 Reverse conduction (diode) thyristor
A type of thyristor that has a switching function for the negative and positive terminals, and when the voltage is positive and negative, it can pass through the three-terminal circuit of the large current system.
2.3.2 Bipolar thyristor bidirectianaliadethyristor;diec-A two-terminal thyristor with basic switching performance in the second quadrant of the seven-terminal circuit. 2.3-21 Bidirectional triode) thyristor
fbigirectionaltodethgriatoritin"A three-terminal thyristor with essentially the same switching capacity in the first and third quadrants of the main characteristic. 2.322F-gate thyristorP-gatehyrigtarA type of transistor with a gate connected to the P-type gate. This device has a passband that adds a positive signal between the gate and the anode to allow it to pass through (ketu)
[Figure Gate Piece Suppression Piece Point Diagram
2-3.23N-gate thyristorN-RatethyristorA type of transistor with a gate connected to the N region close to the anode. This device usually adds a negative signal between the gate and the anode to allow it to pass through (ketu)
GBT 2900.32-94
2.3.24 Photoelectric control thyristor thyrisro;lighta:tivitetl ilyrislur a kind of Ricoh signal loss or optical telecommunications card clock emitter compared to the common state of the product reading kidney 2.3-25 inductive product gate atientuctinnthyrstarSH a clock use the old space charge layer thickness with the gate reverse voltage technology voltage fixed static write induction effect meter dig control conductive ability, only the two ends of the production and gate reverse current jade fixed breaking energy small product tube, 2.3.26 gold case semiconductor gate control (system) product thyristor: Ms control product needs elai-nxiie-miconductorgatr tantrnl tlyriscorThe product is divided into the following configurations: the P-gate and S-gate, etc. The product configurations are divided into the number of dials, the voltage-electric trace, the three-quadrant function reduction, the control plan, the power control plan, and the drag control increase plan. The cost of the product is tested and the connection fee is paid. 2.3.29 This transistor
is a semiconductor device that can provide power amplification and has three or more terminals. Method: 1. The difference between the power supply and the current supply, the current supply above 20A is usually called a type transistor (GTR: 2-3-30 Junction transistor j:s
A transistor with a base region and two or more junctions. Design: The design of the transistor is given below. 2-3-31 Bipolar junction transistor has no junctions. The performance depends on the minority current flow and the majority current flow. 2.3.32 Unipolar transistor 2.333 Bidirectional transistor refers to a bipolar transistor with the emitter (or source electrode or terminal) interchanged and the base and the same characteristics.
2.3-34 Field effect transistor Fiellfetransjsl9emcoriuctorassembly is a combination of one or more discrete semiconductor terminals, heat sinks and other components that may be held, and assembled into a unit with a certain circuit function.
: Generally, there is no need to change the length of the component. The components are detachable. The components should be assembled in a certain manner. The performance of each component should be considered before assembly. 2.4 Accessories and structures
2.4.1 Heater (for power semiconductors) heat aink2.4-f Chip chip
and one or more FN junction semiconductor wafers, 2.4.8 A semiconductor device (of a semiconductor device) includes a chip and its upper and lower conductive materials, including the shell of the semiconductor device: 2.4.9 Grid structure Ecud mounted lcrmsirur Lion refers to the device shell is a smoke gun-shaped external shrinkage structure, such as a device with a heater. It refers to the device and the heater with a standard assembly structure connected by a pair of holes,
2-4.10 Flat structure f 2.4.11 Flat plate (disk-shaped) structure refers to the structure of the device with a flat shell (disk-shaped) external structure. If the device is equipped with a heat sink, it refers to the assembly and matching structure of the device and the heat sink in a single-sided contact. 2.4.12 Flat plate (disk-shaped) structure refers to the structure of the device with a flat shell (disk-shaped) external structure. If the device is equipped with an effector, it refers to the assembly and matching structure of the device and the heat sink in a double-sided semi-opposite contact. 3.1 General technology 3.11 Rectifier GB/T2900-32--94 3-1.2 area in the middle of the light range of the current along the purple wash constant resistance of the reverse dirercicn || tt || twist (the direction of the current flow of the rectifier tube high rate of motion 3.1.3 end of the tube or the nadeterminalofaenicanduetotecifierdiodeotrcctifirceck || tt || forward current from the external circuit into the terminal 3.A board terminal flow or wide stack of cailedcccininaicfasenicaudmreciri-ilerrritier 6tack) || tt || forward range of the circuit out of the pin. || tt || 3.1.5 rectifier will rectilierstack arm The rectifier is a part of the circuit that has only one forward conductive characteristic and is almost opposite to the boundary of the two ends of the circuit. It includes one or the entire connected, sampled or connected rectifier diodes as a helper, that is, the whole stack can be completed as a part of the whole stack.
3.2 Rated value and very slow frequency
3.2.1t. forward voltage (of rectifier diode) The voltage dropped at both ends to stop the forward current from flowing. 3.2.2 positive i] (bee value voltage [unfurwurdvoltag rectifier diode passes with the element or specified rated positive average current value of the phosphorus state sample voltage, 3.2.3i voltage (rectifier diode) reverse voltage (of Mirunrditurrectiiurdiwde) The voltage applied between the rectifier high resistance.
3.2.4 Reverse continuous (DC rectifier) continuous【cirect）reverseelement voltage (DC rectifier)
The constant reverse voltage applied to the rectifier. 3.2.5 Reverse working voltage (rectifier) crexl(peak)wurking revereewuliage(ufusemicanducro:reclifiet diode)
The instantaneous value of the positive voltage appearing at the rectifier or rectifier diode end, excluding all complex and non-repetitive transient voltages. 3.2.6 Reverse nominal peak voltage (rectifier) rcpetitivepeakreverrevoltage (nfsenicaaduanrrrlifirdicale)
The repetitive maximum instantaneous reverse voltage appearing at the rectifier diode end: including all complex transient voltages, but excluding all non-repetitive transient voltages.
3.2.? Reverse non-repetitive peak voltage (of the rectifier) nnn-repe1itivepeakrevurnevoltuge (ufascmiconconductoronrcetifier diodc
The instantaneous value of any non-single effective current appearing at both ends of the rectifier or the rectifier stack, note, the function of repetitive conduction, the non-power-consuming device refers to the increase in power dissipation, the non-repetitive instantaneous current is more than four small sides, and it is assumed that its effect is completely lost before the second non-repetitive state repulsion, 3.2-8 Breakdown voltage (rate of conductor) breakdownvoitage (ofsemicanductnrlpvi:) The reverse current through the junction is greater than the specified value when the reverse current is greater than the specified value, 3.2.9 Positive current forwardeurtent
The current flowing through the rectifier with low resistance, GD/T 2900.32—94
3-2.10 The average value of the positive current in the forward direction during a period of time. 3-2.11
The peak value of the forward current in the forward direction of the battery. Method: The average forward current in the forward direction of the battery is the average value of the forward current in the forward direction of the battery. This coefficient is determined by the power supply voltage. 3.2.12 Forward overload current nverload Forwatdcurrent is a continuous working state that will cause the junction temperature to exceed the rated value. Before the duration of the forward current required to make the junction not exceed the rated value, note: according to the application needs, the device can be overloaded, but at the same time, it should be allowed to operate at a high voltage. 3.2.13 Forward surge farwardcurrenu A field current loss caused by abnormal conditions (faults) will cause the junction end to exceed the rated junction current.
Note: The duration of the device is the value of the second load 3-2.142 of the whole tube) 2valueofscmieonduetsrerbierdioce listed in the case of surge current during the current surge duration. 3.2-15 Current (current) reverrecrefnfraicoadunurectiberdiode) current under negative voltage.
3.2.16 Single value current (rectifier) eetitivearvehr:currnt (ofaemiecnduatorrectifictdiodc>
current plus reverse multiplication of complex peak current limit peak current: 3-2.17 Recovery current (rectifier) Ierserceoverycrrea(odaeniconductortm:t.fieriliud) The part of the current produced during the reverse recovery period. 3.2.18 Complex charge (rectifier, etc.) recoveredcharge(naunicmdurturractifierdiade) The part of the current produced during the reverse recovery period under the specified conditions of the tube. Note: The recovery current is divided into two parts: 3.2.19 Total power total power dissipation is the sum of the power dissipation produced by the forward and total currents under certain conditions. 3.2-20
The power dissipation produced by the forward current under certain conditions.
3.2-21 The average power dissipation produced by the forward voltage and the instantaneous forward turbulence during the five-way average power dissipation is the average power dissipation produced within one cycle. 3.2.22 Reverse power dissipation is the power dissipation produced by the reverse current.
The power dissipation produced by the reverse current (energy required and controllable) urge revernepnwer rliswijwtiun(ofavaiarcne arid cnnrcliil avudanhe reetificr dioceg? During reverse operation, the power dissipated in the rectifier tube by the surge. 3-2.24F power (current) tun-mnwurdiwipEtian (afaemiconductorrectifirrlixle When the rectifier is converted from forward to reverse, during the period of reverse voltage and forward current change, the power consumed in the rectifier tube is 3.2.25 Turn-off power of the rectifier tube) Turn-off power Gigsipalien (o[aemicunduerotrectifiezdiode) When the rectifier tube switches from forward to reverse, the power consumed in the rectifier tube during the change of current and reverse current. 3.2-26 Volt-ampere characteristic (VT characteristic) V-I characteristic) includes forward and reverse voltage-current characteristics, and the passband is represented by a curve. 3.2-27 Positive characteristic curve showing the relationship between the forward voltage and the peak DC current, GB/T2900.32-94
3.2.28 Positive characteristic straight line approximate.onof e Entwanl rhatarlitikli positive characteristic also line: the straight line before the standard point beat speed is used to approximate the forward self-K·electrical construction characteristic. 3-2. 29
(forward threshold voltage (furward)threshoidvoltags forward voltage value determined by the forward characteristic approximation linear motion electrode axis. it: forward sloperesistance3.2.30
resistance value determined by the forward characteristic approximation linear slope period, 3-2. 31
everaerecovertine (ofcoaduorrectifierdiode when switching from forward to reverse, from the moment the current passes through zero, to the time when the forward current decreases from the peak value to a certain specified value (as shown in Figure 3> or to the reverse current sinking zero point (as shown in Figure 4) 1 medicine. The external standard is the specified point A, and the continuous extension of the auxiliary inflammation point (Figure) Figure 1 Test total forward switching time current waveform 3.2.32 Forward recovery time Furward recovery voltage is the time required for the current to recover to the specified value after the instantaneous transition from zero or from a specified reverse voltage to a specified forward current.
3.2-33 Forward recovery voltage is the time required for the current to recover to the specified value after the instantaneous transition from zero or from a specified reverse voltage to a specified forward current.
4 Display tube
General term
4. 1.1 Base terminal The junction between the base region and the collector region.
Terminal
GB/T 2900:32-94
Connected to the external effective connection point of the collector region: 4.1.3 Emitter junction
Connected to the external effective connection point of the emitter region. 4-1.4
Emitter junction:
The junction between the forward-biased emitter and the emitter region, through which minority carriers pass to become minority carriers. 4.1.5 Junction junction
Usually the junction between the forward-biased base region and the collector region, through which minority currents pass to become minority currents. 4.1-6 :egir:n
The region between the emitter junction and the collector junction
4.1.7 Emitter regioncnrrerrogio
The region between the emitter junction and the emitter.
4.1.8 Regioncrllen:nr rrginn
The region between the collector junction and the electrode,Www.bzxZ.net
Gate (field effect transistor) gate【ofFicld.ffecitransisinr）The region that controls the voltage generated by the electrode 4.1.10 Source region (field effect transistor) sourceoffiela-elfecttransieor) The starting region before most carriers follow into the channel, 4.1.17 Wetting region (field effect transistor) drninurfivlilefteetranaator) The region where most carriers flow into the channel. 4.1.12 Common electrode (conmonbase) (arrangemrent) The base terminal is the input circuit, the output circuit is shared, the input end is the emitter terminal, and the output terminal is the electrode terminal. A kind of circuit arrangement of a bipolar junction crystal.
4.1.13 Common electrode (arrangetrtnl) The base terminal is the input circuit, the output circuit is shared, the input terminal is the emitter terminal, and the output terminal is the emitter terminal. It is a necessary configuration for a bipolar junction product.
4.1.14 Its emitter (configuration)
nmmenHanitter(urtangement)
The emitter terminal shares the input circuit and the output circuit, the input terminal is the base, and the output terminal is a double junction crystal with a forging terminal.
4-2 Regarding the constant value of the emitter
4.2.1 Under the conditions of the base control current and the control electrode current determined by the external circuit, the residual current between the electrode and the emitter terminal is controlled.
Base-emitter voltage lwsucrmitterseturatior,voltage4.2.21
Base current, voltage between the emitter and the base current, d.2.3 forward current transfer ratioaticforwardcuraniItansiurrstic output voltage constant when the true current detection system to the DC input current ratio. 4.2.4 Base-base intercept current collector-besecut-cllcu:rent21
The forward-biased junction is between the base region and the collector region, through which minority currents pass and become minority carriers. 4.1.5 The forward-biased junction is between the base region and the collector region, through which minority currents pass and become minority carriers. 4.1-6 region hare :egir:n
the region between the emitter junction and the collector junction
4.1.7 emitter region cnrrerrogio
the region between the emitter junction and the emitter electrode.
4.1.8 region crllen:nr rrginn
the region between the collector junction and the electrode,
gate x (field effect transistor) gate【ofFicld.ffecitransisinr）the region that plays a role in controlling the voltage generated by the electrode 4.1.10 source region (field effect transistor) sourceoffiela-elfecttransieor) the starting region before most carriers follow into the channel, 4.1.17 wetting region (field effect transistor) drninurfivlilefteetranaator) the region where most carriers flow into the channel. 4.1.12 Common electrode (conmonbase) (arrangemrent) The base terminal is the input circuit, the output circuit is shared, the input end is the emitter terminal, and the output terminal is the electrode terminal. A kind of circuit arrangement of a bipolar junction crystal.
4.1.13 Common electrode (arrangetrtnl) The base terminal is the input circuit, the output circuit is shared, the input terminal is the emitter terminal, and the output terminal is the emitter terminal. It is a necessary configuration for a bipolar junction product.
4.1.14 Its emitter (configuration)
nmmenHanitter(urtangement)
The emitter terminal shares the input circuit and the output circuit, the input terminal is the base, and the output terminal is a double junction crystal with a forging terminal.
4-2 Regarding the constant value of the emitter
4.2.1 Under the conditions of the base control current and the control electrode current determined by the external circuit, the residual current between the electrode and the emitter terminal is controlled.
Base-emitter voltage lwsucrmitterseturatior,voltage4.2.21
Base current, voltage between the emitter and the base current, d.2.3 forward current transfer ratioaticforwardcuraniItansiurrstic output voltage constant when the true current detection system to the DC input current ratio. 4.2.4 Base-base intercept current collector-besecut-cllcu:rent21
The forward-biased junction is between the base region and the collector region, through which minority currents pass and become minority carriers. 4.1.5 The forward-biased junction is between the base region and the collector region, through which minority currents pass and become minority carriers. 4.1-6 region hare :egir:n
the region between the emitter junction and the collector junction
4.1.7 emitter region cnrrerrogio
the region between the emitter junction and the emitter electrode.
4.1.8 region crllen:nr rrginn
the region between the collector junction and the electrode,
gate x (field effect transistor) gate【ofFicld.ffecitransisinr）the region that plays a role in controlling the voltage generated by the electrode 4.1.10 source region (field effect transistor) sourceoffiela-elfecttransieor) the starting region before most carriers follow into the channel, 4.1.17 wetting region (field effect transistor) drninurfivlilefteetranaator) the region where most carriers flow into the channel. 4.1.12 Common electrode (conmonbase) (arrangemrent) The base terminal is the input circuit, the output circuit is shared, the input end is the emitter terminal, and the output terminal is the electrode terminal. A kind of circuit arrangement of a bipolar junction crystal.
4.1.13 Common electrode (arrangetrtnl) The base terminal is the input circuit, the output circuit is shared, the input terminal is the emitter terminal, and the output terminal is the emitter terminal. It is a necessary configuration for a bipolar junction product.
4.1.14 Its emitter (configuration)
nmmenHanitter(urtangement)
The emitter terminal shares the input circuit and the output circuit, the input terminal is the base, and the output terminal is a double junction crystal with a forging terminal.
4-2 Regarding the constant value of the emitter
4.2.1 Under the conditions of the base control current and the control electrode current determined by the external circuit, the residual current between the electrode and the emitter terminal is controlled.
Base-emitter voltage lwsucrmitterseturatior,voltage4.2.21
Base current, voltage between the emitter and the base current, d.2.3 forward current transfer ratioaticforwardcuraniItansiurrstic output voltage constant when the true current detection system to the DC input current ratio. 4.2.4 Base-base intercept current collector-besecut-cllcu:rent21
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