This standard specifies the test method for the critical rate of rise of the commutation voltage and the turn-off time of reverse-conducting triode thyristors. The test method and requirements for the general electrothermal characteristics and rated values ​​of reverse-conducting triode thyristors shall comply with the provisions of relevant standards. This standard applies to the test of reverse-conducting triode thyristors. GB/T 15292-1994 Thyristor test method Reverse-conducting triode thyristors GB/T15292-1994 standard download decompression password: www.bzxz.net

National Standard of the People's Republic of China
Test methods for thyristor
Reverse conducting triode thyristor
Measuring methods for tbyristorReverse conducting triode thyristorSubject content and scope of application
GB/T15292—94
This standard specifies the test methods for the critical rate of rise of commutation voltage and the turn-off time of reverse conducting triode thyristor. The test methods and requirements for the general electrothermal characteristics and rated values ​​of reverse conducting triode thyristor shall comply with the provisions of relevant standards. This standard is applicable to the test of reverse conducting triode thyristor. 2 Reference standardsbzxZ.net
GB/T15291 Semiconductor devices Part 6 Thyristor 3 Critical rate of rise of commutation voltage (dV/dt)c
3.1 Purpose
To test the critical rate of rise of commutation voltage that reverse conducting thyristor can withstand without losing control. 3.2 Circuit diagram
DC power supply
3.3 Circuit description and requirements
Figure 1 Commutation voltage critical rise rate test circuit - Test reverse thyristor:
C1, L——Resonant circuit that determines the duration and amplitude of the sinusoidal current pulse: R, C, absorption circuit that changes the voltage rise rate. A forward current is passed through the device, followed by a reverse current. At the moment of forward commutation, a re-applied voltage is applied, and the reverse current drop rate is fixed to measure the device's ability to withstand the re-applied voltage rise rate. 3.4 Measurement procedure
Approved by the State Administration of Technical Supervision on December 7, 1994, and implemented on October 1, 1995
GB/T 15292
When the DC power supply charges the capacitor C, the reverse thyristor under test is triggered, and the charge stored on the capacitor is discharged to the reverse thyristor under test through the inductor I, generating an oscillating current as shown in Figure 2. When the oscillation cycle is over, no gate trigger signal is given to the reverse thyristor under test, the reverse thyristor is in the positive off state, and the reverse thyristor is subjected to the voltage V. The resonant current amplitude is adjusted by changing the charging voltage of, and the circuit parameters C1 and 1 are changed to be small, so that the oscillation pulse width changes, that is, the reverse current drop rate z/dt is changed. At a certain reverse current drop rate di/dt, the size of R and C is changed to change the voltage rise rate dV/dt, and the critical rise rate (dV/dt) of the commutation voltage of the reverse thyristor without losing control is measured. cd
Figure 2 Commutation characteristic waveform
3.5 Specified conditions
Highest operating junction temperature: Tia
On-state peak current F=31AV),
Add off-state voltage Vu=0.5VDRM;
d. The reverse current drop rate should generally be selected as 10 A/μs, 15 A/s, 20 A/μs. If these values ​​cannot meet the requirements, a value greater than 20 A/μss can be selected.
4 Turn-off time (t)
4.1 Measure the turn-off time of the reverse thyristor under specified conditions. 4.2 Circuit diagram
Forward charging cable
State plus photoelectric power supply
Figure 3 Turn-off time test circuit
Reverse photoelectric power supply
4.3 Circuit description and requirements
Tested reverse thyristor,
GB/T 15292—94
Capacitors and inductors of the oscillating circuit that determine the duration and amplitude of the forward current pulse; capacitors that provide reverse current:
Capacitors and inductors of the oscillating circuit that generate the recharge voltage, diodes that isolate the recharge voltage:
Diodes in the recharge voltage path;
Diodes to prevent C. from reverse charging;
Thyristors as reverse current switches;
Thyristors as recharge voltage switches;
Resistors and capacitors of the absorption circuit that change the rate of rise of the recharge voltage; current limiting resistors when the device under test is turned on after applying the recharge voltage; current limiting resistors for reverse current;
Resistors for current sampling.
Shorten the time from the forward current crossing zero to the recharge voltage until the recharge voltage drops and the forward direction is turned on again, and measure the minimum time from the forward current crossing zero to the establishment of the recharge voltage, that is, the turn-off time. 4.4 Measurement procedure
Trigger the reverse-conducting thyristor under test, C, discharges to the reverse-conducting thyristor under test through LD, and generates a sinusoidal forward current, as shown in Figure 4. At the moment when the current passes through zero, TC is triggered, and the reverse current is formed by the discharge through the reverse-conducting thyristor under test, T, and R. Since the capacity of C is large enough and R is used to limit the current, the reverse current is kept at a specified constant value, and T2 is triggered after time t. C discharges through Lz, T, R2, D. and the reverse-conducting thyristor under test, turns off the reverse current, and applies a re-applied voltage to confirm that the reverse-conducting thyristor under test is in the off state, and then shortens the time 1. When the reverse-conducting thyristor under test can just withstand the specified re-applied voltage without turning into the on state, the shortest time interval from the forward current passing through zero to the re-applied voltage is the measured turn-off time.
Add V
Figure 4 Turn-off time test waveform
4.5 Specified conditions
a. Maximum operating junction temperature: T product:
GB/T 15292-94
b. Forward current pulse width: 50us or 100us
C: On-state peak current I=3Trav)
d.. The reverse current amplitude is 3 times the reverse average current, and the reverse current drop rate -di/dz should generally be selected as 5A/s7.5A/M, 10A/us. If this value cannot meet the requirements, it can be greater than 10A/use. Add voltage rise rate dV/dt=0.5(dV/ar)c strong
This standard is proposed by the Ministry of Machinery Industry of the People's Republic of China. This standard is under the jurisdiction of the National Technical Committee for Semiconductor Device Standardization, and this standard is drafted by the Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery Industry. The main drafters of this standard are Shi Jianxin and Huang Jiaxiao.
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