Some standard content:
UDC621.382.003.6
National Standard of the People's Republic of China
GB11499--89
Reduced to SJ/T11089-96
Letter symbols for discrete semiconductor devices1989-03-31issued
State Administration of Technical Supervision
TTTKKAca
1990-04-01implemented
Subject content and scope of application
Rectifier diodes
Signal diodes (including switching diodes) and regulating diodesRF diodes·
Optoelectronic devices
Thyristors
Bipolar transistors
Field effect transistors
Other semiconductor devicesbZxz.net
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National Standard of the People's Republic of China
Letter symbols for discrete semiconductor This standard refers to and adopts the following international standards: IEC148 (1979) Semiconductor devices and micro-integrated circuits - Symbols IEC747
Semiconductor devices - Discrete devices and integrated circuits - Part 1 - General
IEC747-1 (1983)
IEC747-2 (1983)
IEC747-3 (1983)
IEC747-5 (1984)
IEC747-6 (1983)
IEC747-8 (1984)
Part 2
Part 3
Part 5
Part 6
Part 8
Rectifier diodes
Signal diodes (including switching diodes) and regulating diodes Optoelectronic devices
Thyristors
Field effect transistors
IEC747-11 (1985) Part 11
Sectional specification for discrete semiconductor devices
, and supplements the relevant text symbols required in China. Subject content and scope of application
GB71499-89
This standard specifies the main text symbols for discrete semiconductor devices. This standard is applicable to the compilation of standards and technical information related to discrete semiconductor devices.
2 General
2.1 Text symbols for current, voltage and electric power 2.1.1 Basic letters
The recommended basic letters are:
P, pElectric power
Note: IEC Standard 27 only recommends the letters V and as alternative symbols for voltage. In the field of semiconductor devices, "and" are widely used, so in this standard, and and are equivalent.
2.1.1.2 Use of uppercase letters
Uppercase basic letters are used to indicate:
Maximum (peak) value
b. Average value
c: DC value
Root mean square value
2.1.1.3 Use of lowercase letters
Lowercase basic letters are used to indicate transient values that change with time. Approved by the Ministry of Machinery and Electronics Industry of the People's Republic of China on March 18, 1989 YYKAONYKCa
Implementation on April 1, 1990
2.1.2 Subscripts
2.1.2.1 Recommended commonly used subscripts
AV, av-average
F, f-forward
M, m-maximum (peak) value
MINmin-minimum value
0,0-open circuit
R, r-reverse, when used as the second subscript, it means repetition GB11499-89
S, s-short circuit, when used as the second subscript, it means surge or non-repetition (BR)-breakdown
(OV)-overload
tot-total
2.1.2 .2 Choice of uppercase and lowercase subscripts
Where both uppercase and lowercase letters are listed in 2.1.2.1, the use of uppercase or lowercase letters shall comply with the requirements of 2.1.2.2.1 and 2.1.2.2.2. If more than one subscript is used, all of them shall be uppercase or all of them shall be lowercase. 2.1.2.2.1 Use of uppercase letters
Uppercase letters are used to indicate:
DC value when no signal is present
For example: Ig
b. Total transient value
For example: 8
c. Total average value
For example: BAV
d. Total maximum (peak) value
For example: 1
2.1.2.2.2 Use of lowercase subscripts
For example: 1
|tt||Lowercase subscripts are only used to indicate the value of a changing component. That is:. The transient value of the alternating component
For example:
b. The root mean square value of the alternating component
For example: 1.
c. The maximum (peak) value of the alternating component
For example: m
d. The average value of the alternating component
For example: 1o
2.1.2.3 Supplementary provisions on subscripts
2.1.2.3.1 Subscripts for current
If it is necessary to specify the terminal through which the current flows, the first subscript is used to indicate it, for example: 18, 8,, 1
2.1.2.3.2 Subscripts for voltage
If it is necessary to specify the two endpoints of the measured voltage, the first two subscripts can be used to indicate it. The first subscript indicates an endpoint of the device, and the second subscript indicates a reference point or a node of the circuit. For example: UBE, BE, UDeU
VBEUBEUe, V
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GB11499-89
If mixed sliding does not occur, the second subscript can be omitted. 2.1.2.3.3 Subscripts for power supply voltage and power supply current The power supply voltage and power supply current can be represented by repeating the subscript of the corresponding terminal. For example: Uee or Vee, leE
Note that if it is necessary to specify the reference terminal, a third subscript should be used. For example: UccE or VccE
2.1.2.3.4 Subscripts for devices with multiple terminals of the same type If a device has more than one terminal of the same type, the subscript is represented by the letter symbol of the corresponding terminal followed by a number. In the case of multiple subscripts, a hyphen should be added to avoid misunderstanding. For example: 12 - DC current flowing through the second base terminal UB2-E
DC voltage between the second base terminal and the emitter terminal 2.1.2.3.5 Subscripts of composite devices
For the subscripts of composite unit devices, use a number followed by a subscript letter. When there are multiple subscripts, a hyphen is required to avoid misunderstanding.
For example: I2c - DC current flowing through the collector terminal of the second unit Uic-2c
Vie-2e
DC voltage between the collector terminals of the first unit and the second unit 2.1.3 Basic symbol table
The following table explains the application of the rules in 2.1.1 and 2.1.2 Basic symbol table
2.1.4 Example of application of rules
Transient of alternating component Value
Total transient value
No special symbol or subscript:
Root mean square value of alternating component
With special symbol or subscript:
Maximum (peak) value of alternating component
Average value of alternating component
No special symbol or subscript:
DC value when there is no signal
With special symbol or subscript:
Total maximum (peak) value|| tt||Total average value
Figure 1 shows the transistor collector current composed of DC and AC components3
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Ju Shen Hai Jia
Average value of the AC component
No signal DC value
Total average value
No signal
GB11499-89
Total maximum value
With signal||tt| |1. RMS value of alternating component
Icm Maximum value of alternating component
1. Instantaneous value of alternating component
t. Total solution time value
Example of application of the rule in Figure 1
2.2 Symbol rules for electrical parameters
2.2.1 Definition
In this standard, the term "electrical parameter" applies to four-terminal matrix parameters, equivalent circuit elements, impedance and admittance, inductance and capacitance. 2.2.2 Basic Letters
2.2.2.1 Recommended Basic Letters
The following lists the important basic letters used for electrical parameters of semiconductor devices. B,6 - Admittance, imaginary part of four-terminal matrix admittance parameter (3) c - Capacitance
G,9 - Conductance, real part of four-terminal matrix admittance parameter (3) H,h - Four-terminal matrix mixed () parameter
L - Inductance
R,r - Resistance, real part of four-terminal matrix impedance parameter (Z) X, - Reactance, imaginary part of four-terminal matrix impedance parameter (Z) Yy - Admittance: four-terminal matrix admittance parameter (Y) Z,z Impedance, four-terminal matrix impedance parameter (Z) 2.2.2.2 Use of capital letters
Capital letters are used to represent:
a. Electrical parameters of an external circuit or a circuit of which the device is only a part b. Various inductors and capacitors
2.2.2.3 Use of lowercase letters
Lowercase letters are used to indicate the inherent electrical parameters of the device (except inductors and capacitors, see 2.2.2.2 b) 2.2.3 Subscripts
2.2.3.1 Recommended commonly used subscripts
The following is a list of important commonly used subscripts for semiconductor device electrical parameters: F, f - forward, forward transmission
I, i - input
O, o - output ||t t||T-depletion layer
R, r-reverse, reverse transmission
11-input
22-output
12 reverse transmission
21-forward transmission,
only for four-terminal matrix parameters, see 2.2.3.1 YYKAONYKCa
1-input
2-output
GB11499--89
can be used for all electrical parameters except four-terminal matrix parameters Note: For other recommended subscripts, see other chapters of this standard. 2.2.3.2 Choice of uppercase and lowercase subscripts
Where both uppercase and lowercase letters are listed in 2.2.3.1, the use of uppercase or lowercase letters shall comply with the requirements of 2.2.3.21 and 2.2.3.2.2. If more than one subscript is used. All capital letters or all lowercase letters should be used. For example, hPE, YRE, hre
2.2.3.2.1 Use of uppercase subscripts
Uppercase subscripts are used to indicate static (DC) values. For example, h21E or hFE\-static value of forward current transfer ratio in common base configuration Re-DC value of emitter external resistance
2.2.3.2.2 Use of lowercase subscripts
Lowercase subscripts are used to indicate small signal values
For example: 21e or hfe-small signal value of short-circuit forward current transfer ratio in common emitter configuration Ze=Re+jXe-small signal value of external resistance2.2.3.3 Subscripts of four-terminal matrix parameters
Each parameter of a four-terminal matrix is specified according to the following rules. 2.2.3.3.1 The first subscript
The first subscript of a letter or two numbers (both selected from the subscripts in 2.2.3.1) indicates input, output, forward transmission or reverse transmission.
For example, hu or hi
h22 or ho
han or hr
hia or hr
2.2.3.3.2 The second subscript
The second subscript is used to indicate the circuit configuration. These subscripts can be omitted when there is no confusion. For example: h21e or hfe, har or hpE
If only h is written, the circuit configuration must be known. If only h21 is written, the circuit configuration and parameter category (small signal value or static value) must be known.
2.2.4 Distinguishing between real and imaginary parts
If it is necessary to distinguish between the real and imaginary parts of electrical parameters, no new subscripts need to be added. If basic symbols for real and imaginary parts are already available, they can be used.
For example, Ze=Re+jXe
Yfe=Gfe+jBfe
If such symbols are not available or are available but not applicable, the following symbols should be used: R. (hnb) etc., represents the real part of .hub etc. Im (hmb) etc., represents the imaginary part of h etc.
2.3 Text symbols for other quantities
2.3.1 Overview
If a text symbol is not recommended in the following subclauses, the general text symbols in TEC27 standard can be used. If IEC27 has not yet recommended it, the corresponding symbols recommended by ISO can be used. 2.3.2 Time, duration
The basic text symbol is t.
For example, rise time tr
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2.3.3 Temperature
2.3.3.1 Basic text symbols
GB1149989
The basic text symbol is t. When there is a possibility of confusion with the occurrence of "time" (for example, in a data table), the letter or 6 should be used instead. If it is not appropriate to use or 6 instead, the letter T (usually used to represent thermodynamic temperature) can be used instead, but it must be based on the premise that no confusion occurs.
For example: tamb, amb, Tamb25℃
2.3.3.2 Push Recommended common subscripts
amb-ambient
case—tube case
J,j-junction
stg busy storage, storage
2.3.4 Frequency
The basic symbol is f.
For example, maximum oscillation frequency—fmax
2.4 Common text symbols
The common text symbols in this standard are:
Ambient temperature—Tamb
Case temperature—Tease
Reference temperature—Tref
Junction temperature—T
Maximum junction temperature—Tim
Equivalent junction temperature——— T(vi), Teff
Storage temperature—Tstg
Operating temperature—Top
Thermal resistance—Rth
Transient thermal impedance—Z(th)t
Thermal impedance under pulse conditions—z (th)p
Thermal resistance from junction to ambient - R（th)ja
Thermal resistance from junction to case - R(th)jc
Derating factor - Kt
Junction capacitance - Cj
Total capacitance under given bias voltage - Cvj
V - Ctot()
Total capacitance under zero bias voltage - C(tot)o
Case capacitance - Ccase
Total capacitance - Ctot
Distributed capacitance - Cp
Delay time ta
Turn-on delay time - td(on）
Turn-off delay time td(off)
Rise time t
Storage time - ts
Fall time—
Turn on time—ton
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Turn off time—totf
Noise—N,#
Noise factor—FF
Average noise factor—FAv
Point noise factor—F
Output noise ratio—N,
Two-port equivalent input noise voltage—V.
Two-port equivalent input noise current—1.
Noise temperature—T.
Reference noise temperature—To,T.
GB11499-89
Note: When other subscripts are combined with the subscript of R and may cause misunderstanding, the subscript th should be placed in brackets to become Reh). 3 Rectifier diodes
3.1 Supplementary provisions for subscripts of rectifier diodes
3.1.1 Subscripts for voltage, current and power
A, a—anode
K, k—cathode
O—average value of rectifier output
(TO)—threshold
3.1.2 Subscripts for electrical parameters
T—slope
R, r—recovery, rectification
W—working
3.2 Table of symbols
3.2.1Voltage
Forward DC voltage
Reverse DC voltage
Forward peak voltage (maximum forward voltage)Forward average voltage
Reverse working peak voltage (maximum reverse working voltage)Reverse repetitive peak voltage (maximum reverse repetitive voltage)Reverse non-repetitive peak voltage (reverse transient peak voltage)Forward recovery voltage
Forward recovery peak voltage
Threshold voltage
Breakdown voltage (avalanche breakdown voltage)
Transient breakdown voltage
Text symbol
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I. Is the specified value
Applicable only to avalanche rectifier diodes
Forward DC current
Forward repetitive peak current
Forward overload current
Forward (non-repetitive) surge current
Rectified output average current
Reverse DC current
Forward average current
Reverse average current
Reverse recovery current
Reverse peak current
GB11499-89
Text symbol
Ir(AV)
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Lo is the specified value
3.2.3 Power
Forward power dissipation
Reverse power dissipation||tt| |Turn-on power dissipation
Turn-on average power dissipation
Turn-on transient total power dissipation
Turn-on peak power dissipation
Turn-off power dissipation
Turn-off average power dissipation
Turn-off transient total power dissipation
Turn-off peak power dissipation
Reverse repetitive peak power dissipation
Reverse (non-repetitive) surge power dissipation
3.2.4 Others
Forward slope resistance
Rectification efficiency
Recovery charge
Turning point temperature
Junction temperature rise
Temperature coefficient
Forward current decay rate
Pulse time
Repetition frequency
Forward recovery Time
Reverse recovery time
Reverse repetitive peak energy
Reverse non-repetitive peak energy
GB11499-89
Text symbol
PRQAV)
Text symbol
Tbreak
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GB11499-89
4 Signal diodes (including switching diodes) and adjustment diodes 4.1 Signal diodes (including switching diodes) 4.1.1 Supplementary provisions for subscripts of signal diodes (including switching diodes) 4.1.1.1 Subscripts for voltage, current and power A, a—anode
K, k—cathode
O—average value of rectified output| |tt||4.1.1.2 Subscripts of electrical parameters
8, d-damping
r, R-recovery, rectification
s-storage
4.1.2 Table of text symbols
4.1.2.1 Voltage
Reverse DC voltage
Reverse average voltage
Maximum reverse voltage
Forward recovery voltage
Forward DC voltage
Forward average voltage
Reverse transient total voltage
Forward transient total voltage
Reverse surge voltage
Forward recovery peak voltage
Breakdown voltage
Transient breakdown voltage
Text symbols
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