GB/T 6426-1999 Quasi-static test method for hysteresis loop of ferroelectric ceramic materials
Some standard content:
ICs31-030
National Standard of the People's Republic of China
GB/T 6426—1999
Quasi-static test method for ferroelectrichysteresis loop in ferroelectric ceramics
Published on 1999-05-19
Implemented on 1999-12-01
Published by the State Administration of Quality and Technical Supervision
WGB/T6426—1999
This standard is a revision of GB/T6426-1986 "Quasi-static test method for hysteresis loop in ferroelectric ceramics". Compared with GB/T 6427-1986, this standard has the following modifications: a) According to the provisions of GB/T 6427-1986 (13/T 1.11993 Standardization Guidelines Unit 1: Rules for Drafting and Presentation of Standards Part 1: Basic Provisions for Standard Writing), the "Foreword" is added, and the standard is written in the order specified in the standard as an independent standard.
) The test equipment and requirements only specify the requirements for ultra-low frequency high-voltage sources and function recorders, and other requirements for various components such as standard capacitors and operational amplifiers as test circuits are proposed. In addition, the test equipment also adds high-voltage voltmeters and temperature control equipment. ) An important purpose of the test hysteresis loop is to determine the coercive electric field strength E of the test material. The residual polarization intensity P, and the white polarization intensity P, for which the hysteresis loop of the first cycle of the fresh sample must be used to measure the above parameter values. d) The hysteresis loop and the coercive electric field strength F, residual polarization intensity 1, and hair polarization intensity P calculated from it are functions of temperature. For this reason, the standard must specify that the test intensity should be given at the same time as the hysteresis loop. e) Add the test and calculation content of hair polarization intensity 1. This standard will replace GB/T6426--1986 from the date of implementation. This standard is proposed by the Ministry of Information Industry of the People's Republic of China. This standard is issued by the National Technical Committee for Standardization of Ferroelectric Brush Ceramics. The units of this standard are: China Institute of Electrical Technology Standardization, State-owned Factory 721. The main drafters of this standard are: Gong Yugongshuang Shaotang. This standard was first issued in May 1986.
W1FangBan
National Standard of the People's Republic of China
Quasi-static test method for ferroelectrichysteresis toon in ferroelectrie ceramics
Quasi-slalic test method for ferroelectrichysteresis toon in ferroelectrie ceramics This standard specifies the quasi-static test method for hysteresis loops of ferroelectric ceramics. GB/T 64261999
Installation B7T 5426---1586
This standard is applicable to the test of ferroelectric ceramic materials and the determination of the corrected electric field strength E., residual polarization intensity, and spontaneous polarization intensity P. of the sample by the measured hysteresis loop. 2 Referenced standards
The following standards contain clauses that are used in this standard and are used as clauses of this standard. When this standard is published, the versions shown are valid. All standards are subject to revision. The parties to this standard should discuss the applicability of the latest versions of the following standards. GB/T3389.1-1996 Ferroelectric ceramics standard 3 Definitions and symbols
The definitions and symbols used in this standard shall be in accordance with GB/T 3389, 1 Regulations. 4 Test source theory
Under the action of a strong alternating electric field, the polarization intensity P of ferroelectric materials changes nonlinearly with the external voltage, and within a certain range of frequency, the polarization is expressed as a function of the electric field strength, which decays after the electric field is full. The relationship curve between the polarization intensity P and the electric field strength E shown in Figure 1 is usually called the electric field loop. This standard adopts the Sawyer-Tawur circuit test room, and the alternating electric field is supplied by an ultra-cyclic high-voltage source. The electric field is recorded by an X-1 function recorder, and the measured electric field intensity E, the residual polarization intensity P, and the polarization degree of the board are calculated by the measured electric field loop. Approved by the State Quality and Technical Supervision Bureau on May 19, 1999, implemented on December 1, 1999.
. 5 Test conditions
GB/T 6426-- 1999
P, residual polarization intensity, residual polarization degree, electric field intensity Fig. 1 Electric loop of iron body
5.1 Environmental conditions
When measuring the electric field, the test partner must be immersed in silicone oil and measured at different temperatures according to different materials and requirements. When it is necessary to increase the temperature, the sample should be kept at this temperature for not less than 1h. 5.2 Sample size and requirements
The sample is an unpolarized thin sheet with a thickness of no more than 1 mm. The metal layer on both sides is used as an electrode. The sample should be kept clean and dry.
5.3 Test signal requirements
The test signal uses a sine wave with a frequency not higher than 0.1 Hz. 6 Test method
6.1 Schematic diagram of test device
HV-ultra-low frequency high frequency source: F-function recorder J-temperature control device A-operational amplifier: K.-high voltage switch, K-ordinary low voltage switch: C,-sample; Co-standard capacitors Rt, R. Slice resistor R,-adjustable compensation resistor Figure 2 Schematic diagram of quasi-static test device of hysteresis loop The schematic diagram of the test device is shown in Figure 2, in which the input impedance of operational amplifier A is not less than 10\0, its amplification ratio is 1+standard capacitor C, the DC resistance is not less than 10°, and its capacitance is more than 100 times the capacity of the sample: voltage divider resistors R: and R, the total resistance is not less than WGB/r: 6426-1999
5M2, the voltage divider ratio is selected as 250 and 500; compensation resistor R, different resistance values are selected according to different samples. 6. 2 Test equipment and variables
a) Ultra-low frequency high voltage source: the output voltage channel meets the test requirements of the sample, the frequency is not higher than 0.1Hz sine wave or triangle wave; 6) Function recorder: the traceability error is not more than 1 light; c) High voltage voltmeter: the measurement error is not more than 1%, the input impedance is not less than 10° α: d) Temperature control equipment: the temperature control error is not more than +2r. 6.3 Test sequence
6.3.1 After connecting the test circuit according to Figure 2, place the sample in the sample fixture in silicone oil. Determine whether to add temperature to the test pad according to the needs. 6.3.2 Select an appropriate standard capacitor (C), and the input voltage should be within the cut-off range of the operational amplifier; short-circuit the standard capacitor C and adjust the cut-off point of the operational amplifier; select appropriate sensitivity of the data recorder and the analog input signal according to different samples to obtain a suitable voltage. 6.3.3 Use an HV meter to measure the voltage between point A of the test circuit and the ground, and use a data recorder to measure the voltage between point B and the ground to determine the voltage division ratio. 6.3.4 Connect an appropriate voltage switch when the voltage passes through zero voltage, apply the voltage to the sample under test, and gradually apply the input voltage of the high-voltage source until the voltage loop is saturated to positive. 6.3.5 Cut off the high-voltage source on the test partner and discharge the test partner and the standard cut-off capacitor C. 6.3.6 Replace another test partner of the same type and adjust the output voltage of the high-voltage source to 6.3.4 The highest value determined, when passing through zero voltage, the hysteresis loop is connected, and the high voltage is applied to the test sample. The hysteresis loop is recorded with a function recorder, and the coercive electric field strength, residual polarization intensity P, and spontaneous polarization intensity P are calculated based on the hysteresis loop of the first cycle. According to the needs, the stable hysteresis loop is also measured, and it is used to calculate the coercive electric field strength E, residual polarization intensity F, and spontaneous polarization intensity P. 6.3.7 Cut off the high voltage on the test sample, and discharge the sample and the standard electrode. 6.4 Performance parameter calculation
Based on the measured hysteresis loop, the coercive electric field strength, residual polarization intensity P and spontaneous polarization intensity P are calculated using formulas (1), 2) and (3) respectively. The coercive electric field strength, residual polarization intensity P and spontaneous polarization intensity P are related to the test temperature. When quoting other values, the test temperature should be measured at the same time.
P,t-Cy_Cy
In the formula, E...coercive strength. V/m:
Voltage across the sample (when P=0) V;
1Sample float. ml
S—-X steel sensitivity of the function recorder, V/mrx
X axis reading from the origin to 1=0, m;
d-proportional to the input of the high voltage source;
P,—--residual polarization intensity, C/m
Q, when the source is zero, the total charge on the group, C; A
the product of the electrodes of the sample, m;
Ca—-capacitance of the pseudo-capacitor,F;
Y-axis voltage from the origin to F (the intersection of the hysteresis loop and the Y-axis), V, Y-axis sensitivity of the function recorder, V/m;
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GB/T 6426--1999
Y-axis reading from the origin to E=0 (the intersection of the hysteresis loop and the Y-axis), after the hysteresis loop is saturated, the intersection of the extension line of the 1\-E straight line and the Y-axis (as shown in Figure 1) and the corresponding simulated total Q
charge on the sample, Ct
Y-axis voltage at the intersection of the extension line of the origin to the PE line and the Y-axis, V; Y-axis reading at the intersection of the extension line of the origin to the -E straight line and the Y-axis, m,
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