Some standard content:
GB/T11499——2001
This standard refers to the relevant text symbols of the following international standards and revise GB/T11499—1989:IEC60747Semiconductor devicesDiscrete devices and integrated circuitsIEC60747-11983
IEC 60747-1:1991
IEC60747-1.1993
IEC60747-1:1996
IEC 60747-2:2000
IEC 60747-3.1985
IEC 60747-3:1991
IEC60747-3:1993
IEC60747-4:1991
IEC 60747-4:1993
IEC 60747-4:1999
IEC60747-5:1992
IEC60747-5:1994
IEC60747-5:1995
IEC 60747-6:1983
IEC60747-6:1991
IEC60747-6:1994
IEC60747-7.1988
IEC 60747-7:1991
IEC 60747-7:1994
IEC60747-8.1984
IEC60747-81991
IEC 60747-8:1993
IEC60747-9:1998
Part 1 General
First supplement
Second supplement
Third supplement
Part 2 Rectifier diodes
Part 3 Signal diodes (including switching diodes) and regulating diodes First supplement
Second supplement
Part 4 Microwave devices
First supplement
Second supplement
Part 5 Optoelectronic devices
First supplement
Second supplement
Part 6 Thyristors
First supplement
Second supplement
Part 7 Bipolar transistors
First supplement
Second supplement
Part 8 Field effect transistors|| tt||First Supplement
Second Supplement
Part 9 Insulated Gate Bipolar Transistors
The main differences between this standard and the original standard are: - "Power dissipation" in the entire text of the original standard is changed to "dissipated power"; - 2.1.1.2 "Capital basic letters" in the original standard is modified; - 2.1.3 "Summary table of text symbols for current, voltage and power" in the original standard is modified; - 2.3 "Text symbols for other quantities" in the original standard is modified; - Part of the content in "2.4 Other parameters" in the original standard is modified; - Part of the content in "6.2.2.2 Others" in the original standard is deleted; - "2.1.5 Current and voltage polarity markings" is supplemented, and "2.5 Text symbols for signal ratios expressed in decibels (dB) in logarithmic form" is supplemented; - "6.1.1 Switching time" is supplemented
- "Chapter 9 Insulated Gate Bipolar Transistors" is supplemented. 1
GB/T11499—2001
This standard replaces GB/T11499—1989 "Symbols for Discrete Semiconductor Devices" from the date of implementation. This standard is proposed by the Ministry of Information Industry of the People's Republic of China. This standard is under the jurisdiction of the National Technical Committee for Standardization of Discrete Semiconductor Devices. This standard is revised by the Hebei Semiconductor Research Institute. The main drafters of this standard are Cui Bo, Gu Zhenqiu and Chen Hairong. The first release date of this standard is March 31, 1989. 1 Scope
National Standard of the People's Republic of China
Symbols for Discrete Semiconductor Devices
Letter symbols for discrete semiconductor devices GB/T11499—2001
Replaces GB/T11499—1989
This standard specifies the main symbol for discrete semiconductor devices. This standard is applicable to the compilation of standards and technical information related to discrete semiconductor devices.
2 General
2.1 Symbols for current, voltage and electric power 2.1.1 Basic letters
The recommended basic letters are:
I——current
U,u or V,—
-voltage
P,p——power
2.1.1.1 Use of uppercase basic letters
Uppercase basic letters are used to indicate constant values of quantities or values obtained from the periodic waveform of quantities: a) DC value;
b) maximum (peak) value;
c) average value;
d) root mean square value;
e) peak-to-peak (swing) value.
2.1.1.2 Use of lowercase basic letters
Lowercase basic letters are used to indicate transient values of the periodic waveform of quantities. 2.1.2 Subscripts
2.1.2.1 Recommended general subscripts
First subscript: F, f—forward
n—noise
R, r—reverse
Other subscripts: (AV)—average
(BR)—breakdown
(cr), cr—critical
(D)—direct
M(MAX), m(max)—maximum (peak) value relative to timeMIN, min—
minimum (peak) value relative to time
National Quality Standard of the People's Republic of China Approved by the General Administration of Quality Supervision, Inspection and Quarantine on November 5, 2001 and implemented on June 1, 2002
0.0——Open circuit
(ov)——Overload
(PP), (pp)—Peak-to-peak, swing
R,r——Repetitive, recovery
(RMS), (rms)
S,s—Short circuit, surge
(tot), tot——Total value
GB/T11499—2001
Root mean square value
Note: For other recommended subscripts, see other chapters of this standard. 2.1.2.2 Choice of uppercase and lowercase subscripts
Where both uppercase and lowercase letters are listed in 2.1.2.1, the use of uppercase or lowercase letters shall comply with the requirements of 2.1.2.2.1 and 2.1.2.2.2. If more than one subscript is used, all of them shall be uppercase or all of them shall be lowercase. 2.1.2.2.1 Use of uppercase subscripts
Uppercase subscripts are used to indicate total quantities:
a) DC values, e.g., B(O), Is
b) Total transient values, e.g., ;
c) Total average values, e.g., IB(AV); d) Total maximum (peak) values, e.g., IBM; e) Total root mean square values, e.g., Is(RMS); f) Total peak-to-peak values, e.g., Vo(FP).
2.1.2.2.2 Use of lowercase subscripts
a) Lowercase subscripts are only used to indicate changing component values (including small signal modulation), namely: 1) The transient value of the alternating component
For example; dynamic
2) The maximum (peak) value of the alternating component
For example: Iom
3) The root mean square value of the alternating component
For example: or Ib(rma)
Note: It is recommended to use Ib(m)
4) The peak-to-peak value of the alternating component
For example: V. (mp)）
b) When used with uppercase subscripts, the required brackets can be omitted. For example: VCEat
2.1.2.3 Supplementary provisions on subscripts
2.1.2.3.1 Subscripts for current
a) If it is necessary to indicate the terminal through which the current flows, use the first subscript to indicate it (except for exceptions). The other terminal through which the current flows can be indicated by the subsequent subscript.
For example: base current of a transistor 1s
Transistor collector emitter cutoff current Ices with V=0 Field effect transistor forward gate current IGF
b) Exception: In the text symbols of the forward and reverse gate currents of a thyristor, the letter "F" or "R" is placed before the subscript of the terminal symbol.
For example: forward gate current of a thyristor IpG
reverse gate current of a thyristor IRG
2.1.2.3.2 Voltage subscripts
GB/T11499—2001
a) If the two endpoints of the voltage to be measured need to be indicated, the first two subscripts can be used (except for exceptions). The first subscript indicates an endpoint of the device, and the second subscript indicates the reference point or node of the circuit. When there is no confusion, the letter indicating the reference point can be omitted. For example: Collector-emitter (DC) voltage when transistor VB=0 Base-emitter voltage of transistor
Forward gate-source voltage of field effect transistor
b) Exceptions:
1) Forward gate voltage of P-type thyristor
Reverse gate voltage of P-type thyristor
Forward gate voltage of N-type thyristor
Reverse gate voltage of N-type thyristor
VB or VB
2) The letter symbol of the breakdown voltage, the subscript (BR) is placed before the terminal subscript For example:
Collector-emitter breakdown voltage at Is0
2.1.2.3.3 Subscripts for power supply voltage and power supply current V(BR)CEO
Power supply voltage and power supply current can be indicated by repeating the subscript of the corresponding terminal. For example: Vcc, IE
Note: If the reference terminal needs to be specified, a third subscript should be used. For example: UcCE or VcCR
2.1.2.3.4 Subscripts for devices with multiple terminals of the same type If a device has more than one terminal of the same type, the subscript is represented by the letter symbol of the corresponding terminal followed by a number; in the case of multiple subscripts, a hyphen is required to avoid misunderstanding. For example: Is2—the direct current flowing through the second base terminal 2.1.2.3.5 Subscripts for composite devices
For the subscripts of composite unit devices, a number followed by a subscript letter is used to represent it. In the case of multiple subscripts, a hyphen is required to avoid misunderstanding.
For example: 12c—the direct current flowing through the collector terminal of the second unit Vic—2c-
the direct voltage between the collector terminals of the first unit and the second unit. 2.1.3 Summary of current, voltage and power symbol rules The following table is an explanation of the application of the rules in 2.1.1 and 2.1.2. Basic letters
Lowercase (i)
Electrode or terminal
Terminal subscript
Only for terminal subscript:
·Transient value of alternating component
Only for terminal subscript:
Uppercase (I,,P)
·Root mean square value of alternating component (additional subscript (rms) is recommended)Terminals with terminal subscripts and one of the following additional subscripts: "m: Maximum transient value of alternating component
·min: Alternating Minimum transient value of the alternating component
.(rms): RMS value of the alternating component·(pp), Peak-to-peak value of the alternating component
Electrode or lead
Subscript
2.1.4 Rule Application Examples
Lowercase ()
Only for lead subscript:
·Total transient value
GB/T11499—2001
Table (end)
Basic letters
Uppercase ( I,,P)
Only for terminal subscripts:
: DC current or voltage value (recommended to use the additional subscript (D))With terminal subscripts and one of the following additional subscripts:·(D): DC current or voltage value
·(AV): Total average value
?M: Total maximum transient value
·MIN: Total minimum transient value
·(RMS): Total root mean square value
·(PP): Total peak-to-peak value|| Figure 1 shows the transistor collector current consisting of DC and AC components. fen:%
Alternating component to
Alternating component
Transient borrowing
DC component
Total average value
2.1.5 Current and voltage polarity representation
Total transient estimate
Alternating quantity maximum (peak) value
Total maximum value
Commercial quoted value
Fery e
Total peak-to-peak value
Minimum value of alternating denominator
Total minimum value
Example of application of the rule for periodic quantities
(of alternating denominator)
Total mean square
Note: The following representation method is applicable only when the basic text symbol or negative text symbol is constructed according to 2.1.2.3.1 and 2.1.2.3.2 respectively, that is, there is no exception to the basic rule. When it is not represented in this way, the appropriate method of polarity representation should be given. For example, forward/reverse gate current/voltage, this representation method is part of the definition.
2.1.5.1 Current (flowing through one lead) 2.1.5.1.1 Basic text symbols
Basic text symbols Ix, if the current flows into port X from the external circuit, it is considered to be positive. If the current flows out of the external circuit from port X, it is considered to be negative.
2.1.5.1.2 Negative text symbols
Negative text symbols - Ix, if the current flows into port X from the external circuit, it is considered to be negative. If the current flows out of the external circuit from port X, it is considered to be positive.
GB/T11499—2001
Note: It follows the algebraic rule: that is, Ix=—5A can be expressed as —Ix=5A. 2.1.5.2 Voltage (between two ports)
2.1.5.2.1 Basic text symbols
When the basic text symbol Vx is used to represent voltage, if the potential of port X is higher than that of port Y, the voltage is considered to be positive. If the potential of port X is lower than that of port Y, the voltage is considered to be negative. 2.1.5.2.2 Negative text symbols
When the negative text symbol -Vx is used to represent voltage, if the potential of port X is lower than that of port Y, the voltage is considered to be positive. If the potential of port X is higher than that of port Y, the voltage is considered to be negative. Note that it follows the algebraic rules: that is, Vxy = -5V can be expressed as -Vxy = 5V. 2.2 Text symbol rules for electrical parameters
2.2.1 Definitions
In this standard, the term "electrical parameter" applies to four-terminal matrix parameters, equivalent circuit elements, impedances and admittances, inductances, and capacitances. 2.2.2 Basic letters
2.2.2.1 Recommended basic letters
The important basic letters used for the electrical parameters of semiconductor devices are listed below. B,b—admittance; the imaginary part of the four-terminal matrix admittance parameter () C—capacitance
G,g—conductance; the real part of the four-terminal matrix admittance parameter (gy) H,h—hybrid (h) parameter of the four-terminal matrix L—inductance
—resistance; the real part of the four-terminal matrix impedance parameter (Z) R,r—
X,—reactance; the imaginary part of the four-terminal matrix impedance parameter (z) Y,y
Z,z—
—admittance; the four-terminal matrix admittance parameter (Y )
Impedance; four-terminal matrix impedance parameter (Z)
2.2.2.2 Use of uppercase letters
Uppercase letters are used to indicate:
a) electrical parameters of an external circuit or the electrical parameters of a circuit of which the device is only a part b) various inductors and capacitors
2.2.2.3 Use of lowercase letters
Lowercase letters are used to indicate the inherent electrical parameters of a device (except inductors and capacitors, see b in 2.2.2.2). 2.2.3 Subscripts
2.2.3.1 Recommended general subscripts
The following is a list of important general subscripts used for electrical parameters of semiconductor devices: Ff—Forward; forward transmission
I,i——Input
0,0Output
T Depletion layer
R,r——Reverse; reverse transmission
11——Input
22——Output
12——Reverse transmission
21——Forward transmission
Only used for four-terminal matrix parameters, see 2.2.3.35
1——Input
2Output
GB/T11499—2001
Can be used for all electrical parameters except four-terminal matrix parameters Note: For other recommended subscripts, see other chapters of this standard. 2.2.3.2 Choice of uppercase and lowercase subscripts
Where both uppercase and lowercase letters are listed in 2.2.3.1, the use of uppercase or lowercase letters shall comply with the requirements of 2.2.3.2.1 and 2.2.3.2.2. If more than one subscript is used, all of them shall be uppercase or all of them shall be lowercase. For example: hE, YRE, ht
2.2.3.2.1Use of uppercase subscripts
Uppercase subscripts are used to indicate static (DC) values. For example: h21E or hFE—Static value of the forward current transfer ratio in the common base configuration Re—DC value of the emitter external resistance 2.2.3.2.2 Use of lowercase subscripts
Lowercase subscripts are used to indicate small signal values.
For example: h2le or he—Small signal value of the short-circuit forward current transfer ratio in the common emitter configuration Z=R. + iX. —Small signal value of the external impedance 2.2.3.3 Subscripts of four-terminal matrix parameters
Each parameter of a four-terminal matrix is specified as follows: a) First subscript
The first letter subscript or two-digit subscript (both selected from the subscripts in 2.2.3.1) indicates input, output, forward transfer, or reverse transfer.
For example: hu or ht
h22 or h.
h2 or ht
h12 or hr
b) Second subscript
The second subscript is used to indicate the circuit configuration. These subscripts can be omitted when there is no confusion. For example: h21e or he, h2 or hFE
If only ht is written, the circuit configuration must be known. If only h2 is written, the circuit configuration and parameter category (small signal value or static value) must be known.
2.2.4 Distinguishing between real and imaginary parts
If it is necessary to distinguish between the real and imaginary parts of electrical parameters, there is no need to add new subscripts. If the basic symbols for the real and imaginary parts are already available, they can be used.
For example: Z=R. + iX.
ye=Gh+iBe
If such a symbol does not exist or exists but is not applicable, the following symbols should be used: -R(h11b) etc., indicating the real part of h116 etc.; -Imh11b) etc., indicating the imaginary part of h11 etc. 2.3 Text symbols for other quantities
2.3.1 Time, duration
The basic text symbol is t
For example: rise time t
2.3.2 Thermal properties and related temperatures
2.3.2.1 Basic text symbols for temperature
GB/T11499—2001
The basic text symbol is T, indicating Celsius temperature or thermodynamic temperature. For example: T-25℃, T. -295K
Note: It is not advisable to use lowercase letter t to indicate temperature. 2.3.2.2 Recommended General Subscripts
j,J—Junction (channel) (see Note 1)
vj,VJ—Effective junction (channel); internal equivalent junction (see Notes 1 and 2) c,C—Case (see Note 3)
ch—Channel (see Note 1)
—Reference point (see Note 3)
a,A—Ambient (see Notes 3 and 4)
s,s—Heat sink
f,F—Refrigeration fluid, other than air
sb—Substrate
—Storage
—Soldering
Working (see Note 4)
1 The subscript j (or J), vj (or VJ) may be used instead of ch to indicate “channel”. 2 In data records and detail specifications, the effective junction (channel) temperature is usually referred to, so the letter V in the subscript may be omitted. 3 Do not use long subscripts such as "case", "ref" and "amb". When they are used to represent thermal resistance or impedance, they should be separated by hyphens and enclosed in brackets, such as Ra(-amb).
In the text symbols for operating temperature, such as Taop for "operating ambient temperature", the subscript op is usually omitted in data record 4
without causing confusion.
2.3.2.3 Composition of text symbols for thermal resistance and thermal impedance Note: In the recommended text symbols, the letters x, y or X, Y represent the dot matrix or area of the thermal resistance or thermal impedance expansion. These subscripts should be selected from 2.3.2.2. 2.3.2.3.1 Thermal resistance
The basic composition is: Ra(-), Ra(xY)
2.3.2.3.2 Transient thermal impedance
The basic composition is: Ztm(xy), Zth(xY)2.3.2.3.3 Transient thermal impedance under pulse conditions The basic composition is: Zthp(xy), Zthp(xY)2.3.3 Frequency
The basic symbol is
For example: fmax
2.4 Other parameters
Maximum oscillation frequency
The following parameter symbols are recommended:
K. Thermal derating factor
F,FAv——Average noise factor
F——Point noise factor
N.—Output noise ratio
V. ——(Two-port) equivalent input noise voltage 1.——(Two-port) equivalent input noise current T.—Noise temperature
T. Tm——reference noise temperature
GB/T11499—2001
2.5 Symbols for signal ratios expressed in logarithmic form in decibels (dB) 2.5.1 Power ratio
The symbol "dB" is used to represent the logarithmic unit when the ratio of two power values is expressed in decibels with the logarithm as the base 10, and is expressed by the following formula:
n=10lg(P/P2)dB
Note: In principle, the symbol "*dB" can only represent the power ratio, see also 2.5 .2 Note. 2.5.2 Voltage ratio (or current ratio)
-*++*-+.(1)
The symbol \dB(V)" (or "dB(I)") is used to represent the logarithmic unit when the ratio of two voltage values (or current values) is taken as the logarithm with base 10 and expressed in decibels, expressed by the following formula: n=20lg(Vi/V2)dB(V)
or n=20lg(I/12)dB(I)
....(2)
..........( 3)
Note: The value calculated by formula (2) or (3) can be expressed in dB, because the application of formula (1) corresponding to power can obtain the same value. 3 Rectifier diodes
3.1 Supplementary provisions for general subscripts of rectifier diodes 3.1.1 Subscripts for voltage, current and power
A, a——anode
K, k——cathode
O Average value of rectified output
(TO) threshold
3.1.2 Subscripts for electrical parameters
T——slope
R, r——recovery, rectification
-working
3.2 Table of text symbols
3.2.1 Voltage
Forward DC voltage
Reverse DC voltage
Forward peak voltage (maximum forward voltage)| |tt||Forward average voltage
Reverse operating peak voltage (maximum reverse operating voltage)Reverse repetitive peak voltage (maximum reverse repetitive voltage)Reverse non-repetitive peak voltage (reverse transient peak voltage)Forward recovery voltage
Forward recovery peak voltage
Breakdown voltage
Transient breakdown voltage
Forward slope resistance
Threshold voltage
Text symbols
Io is the specified value
The schematic diagram of some symbols is shown in Figure 2
3.2.2 Current
Forward DC current
Forward repetitive peak current
Forward RMS forward current
Forward overload current
Forward (non-repetitive) surge current
Rectified output average current
Reverse DC current
Reverse average current
Forward average current
Reverse recovery current
Reverse recovery peak current
Case non-destructive peak current
GB/T11499—2001
Figure 2 Schematic diagram of text symbols for rectifier diode reverse voltage parameters
Text symbols
Ig(av)
The schematic diagram of some symbols is shown in Figure 3
Io is the specified value
Figure 3 Schematic diagram of the text symbol of the forward current parameter of the rectifier diode 9
3.2.3 Power
Forward dissipation power
Reverse dissipation power
Turn-on dissipation power
Turn-on average dissipation power
Turn-on transient total dissipation power
Turn-on peak dissipation power
Turn-off dissipation power
Turn-off average dissipation power
Turn-off transient total dissipation power
Turn-off peak dissipation power
Reverse repetitive peak dissipation power
Reverse (non-repetitive) surge dissipation power
3.2.4 Switch
Forward recovery time
Reverse recovery timebZxz.net
Reverse recovery current rise time
Reverse recovery current fall time
Recovery charge
Rise time charge
Fall time charge
(Reverse recovery) soft factor
3.2.5 Others
Rectification efficiency
Turning point temperature
Junction temperature rise| |tt||Temperature coefficient
Forward current decay rate
Pulse time
Repetition frequency
Reverse repetitive peak energy
Reverse non-repetitive peak energy
Symbol
GB/T11499—2001
Symbol
Per(AV)
PBQ(AV)
Symbol
T oreak
4 Signal diodes (including switching diodes) and adjustment diodes 4.1 Signal diodes (including switching diodes) t
4.1.1 Supplementary provisions for subscripts of signal diodes (including switching diodes) 4.1.1.1 Subscripts of voltage, current and power 10
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