JB/T 6307.1-1992 Test methods for power semiconductor modules - Rectifier arm pairs
Some standard content:
Mechanical Industry Standard of the People's Republic of China
JB/T6307.1-1992
Test Methods for Power Semiconductor Modules
Rectifier Arm Pairs
Published on 1992-06-26
Implementation by the Ministry of Machinery and Electronics Industry of the People's Republic of China on 1993-01-01
Mechanical Industry Standard of the People's Republic of China
Test Methods for Power Semiconductor Modules
Rectifier Arm Pairs
Subject Content and Scope of Application
This standard specifies the test method for arm pair modules composed of semiconductor diode chips. JB/T 6307.11992
This standard applies to power semiconductor rectifier arm pair modules with a current of 5A and above, and arm pair components composed of rectifier diodes should also be used as a reference.
2 Terminology
This terminology only covers the terms applicable to arm-to-arm modules that are not provided in GB2900.32 "Electrical Terminology Power Semiconductor Devices". 2.1 Equivalent Junction Temperature (Tv)
The junction temperature obtained by electrical measurement based on the thermoelectric calibration relationship between the two chips in the arm pair within the module. 2.2 Thermal Resistance (Ra)
Under thermal equilibrium conditions, the ratio of the temperature difference between the module's equivalent junction temperature and the reference point to the dissipated power that produces the temperature difference. 3
Circuit symbols and general test requirements
3.1 Circuit symbols
Adjustable AC voltage source;
Adjustable pulse power supply;
G——Adjustable constant current source;
G-constant current source;
Transformer;
Diode;
Thyristor;
Resistor;
Adjustable resistor:|| tt||Approved by the Ministry of Machinery and Electronics Industry on June 26, 1992, and implemented on January 1, 1993
Capacitor;
Inductor;
S switch;
PV--voltmeter;
PA--ammeter;
-wattmeter;
P oscilloscope;
recording instrument;
E--test module.
3.2 General requirements for testing
JB/T6307.1-1992
3.2.1 Test power supply
3.2.1.1 All power supplies in the test circuit should have clamping measures to protect the test module from damage caused by transient phenomena such as surges during switching, adjustment and measurement.
3.2.1.2 Power supply fluctuations should not affect the measurement accuracy. The AC power supply frequency is 50±1Hz, the waveform is a sine wave, and the waveform distortion coefficient is not greater than 10%; the DC power supply ripple coefficient should not be greater than 1% for reverse characteristic measurement and should not be greater than 10% for forward characteristic measurement. 3.2.2 Measuring instruments and circuit conditions
3.2.2.1 The instrument should have protection measures to prevent overload caused by failure of the tested module or wiring errors. In order to prevent unwanted half-cycle pulses from entering the amplifier of the oscilloscope, a diode protection can be connected in the circuit. 3.2.2.2 When measuring large current modules, the voltage measurement node should be separated from the current conduction node. When the error caused by the voltage drop in the circuit when measuring current and the current in the circuit when measuring voltage is considerable, the measurement result must be corrected. When measuring small currents, appropriate precautions should be taken to ensure that stray capacitance and inductance do not affect the measurement accuracy, and that the parasitic circuit current and external leakage current are much smaller than the measured current, or their influence is corrected in the measurement results. 3.2.2.3 The accuracy of DC and AC voltmeters, ammeters and measuring shunts should generally be Class 0.5 or higher, and the influence of their impedance on the measurement system should be negligible. Instruments with an accuracy lower than Class 0.5 can be used in the following cases: a.
has no significant effect on the measurement result;
has no significant effect on the judgment of qualification; b.
does not have a 0.5-pole standard instrument according to national standards. c.
3.2.3 Environmental conditions
3.2.3.1 Atmospheric conditions for room temperature test
Benchmark atmospheric conditions: temperature 25℃, relative humidity 65%, air pressure 101.3×10°Pasa.
Arbitration test atmospheric conditions: temperature 25±1℃, relative humidity 63%~67%, air pressure 86×10°~106×10°Pa; b.
c. Conventional test atmospheric conditions: temperature 5~35℃, relative humidity 45%~85%, air pressure 86×10106×10°Pa. When relative humidity and atmospheric pressure have no significant effect on the measured parameters, the atmospheric conditions can be based on temperature only. When the room temperature is far higher than 25℃, the surface temperature has a significant effect on the measured parameters. The measurement results should be corrected according to 25℃. When the module under test is subjected to high temperature test or low temperature test in a high or low temperature box or on a temperature control fixture, the temperature fluctuates within the range of 1 to 1°C. When the temperature has no obvious effect on the measured parameters, the temperature difference fluctuates within the range of 2 to 2°C, otherwise the measurement results should be corrected. Unless otherwise specified, high temperature test refers to the test under TC, where T is the rated maximum junction temperature; low temperature test refers to the test under the rated minimum junction temperature. 4 Electrical Characteristics Test
4.1 Reverse Repetitive Peak Current (1m)
4.1.1 Purpose
Measure the reverse repetitive peak current of the chip in the module under specified conditions. 4.1.2 Principle circuit and requirements
Figure 1 Reverse repetitive peak current test circuit
A diode that provides a negative half-cycle voltage so that only the reverse characteristics of the chip E are measured; VD1.VD2-
Its value should be selected to limit the current flowing through E when E breaks down to prevent damage to E and the instrument; R1-
Current limiting protection resistor,
Non-inductive resistor for calibrating current;
A peak reading meter can be used instead of an oscilloscope, and the peak current meter should be able to display the current value when the reverse voltage reaches the peak value. 4.1.3 Specified conditions
Junction temperature: 25℃ and Tml
b. Reverse voltage: Reverse repetitive peak voltage (VrRu); AC voltage source frequency: 50Hz.
4.1.4 Test Procedure
Adjust the AC voltage source, measure the chip's reverse repetitive peak voltage on the oscilloscope, and then measure the chip's reverse repetitive peak current on the oscilloscope connected to both ends of R2. Each chip is tested, and the larger one is the module's reverse repetitive peak current. 4.2 Forward Peak Voltage (V)
4.2.1 Purpose
Under specified conditions, use the pulse method to measure the forward peak voltage of the chip in the module. 4.2.2 Principle Circuit and Requirements
JB/T6307.1-1992
Figure 2 Forward Peak Voltage Test Circuit
R2——Non-inductive resistor for calibrating current readings; N
R1——Protection resistor;
VT——Thyristor for controlling current pulses, which generates pulse current when on, and should immediately be off when the pulse current ends. The pulse width and repetition frequency of G should make the internal heating during the measurement period negligible. A peak reading meter can be used instead of an oscilloscope. The peak voltmeter should be able to display the voltage value when the forward current reaches the peak value. 4.2.3 Specified conditions
a Junction temperature: 25°C for factory inspection, 25°C and T for type inspection; b. Forward peak current: π times the rated forward average current value of a single chip in the module (π can be 3); 4.2.4 Test procedure
The test module is fastened to a fixture or heat sink, and the test point for measuring the peak voltage (V) is as close to the module housing as possible. Pay attention to eliminating contact voltage drop. Current and voltage sampling should be a four-point continuous switching method. Note:
Adjust the voltage of the pulse power supply from zero to gradually increase, so that the forward current flowing through the single chip in the test module is adjusted to the specified value. At this time, the voltage value displayed by the oscilloscope or peak voltmeter is the measured forward peak voltage. Each chip is tested. The larger value is taken as the forward peak voltage of the module.
4.3 Forward (V/A) Characteristics (VM-Tm Curve) 4.3.1 Purpose
Under specified conditions, use the pulse method to test the relationship between the forward peak voltage and forward peak current of the chip in the module, and draw a curve. 4.3.2 Principle Circuit and Requirements
Meet 4.2.2.
4.3.3 Specified Conditions
8. Junction temperature: 25℃ and Tm
b. Forward current range, to more than 4.5 times the rated forward average current value. 4.3.4 Test Procedure
The different forward peak currents and corresponding forward peak voltages of a single chip are measured at 25℃C and T respectively. Each chip is tested and the larger value is taken as the module's VrM-IM.Draw two forward volt-ampere characteristic curves at 25°C and Tm on the same arithmetic coordinates; if the test current range is relatively large, the curve can be drawn using single logarithmic coordinates. 5 Thermal characteristic test
5.1 Basic requirements
5.1.1 All electrical tests shall be carried out under thermal equilibrium conditions unless otherwise specified or the measurements are completed under pulse conditions. 5.1.2 If the time from power application to measurement is doubled, and the change in the measurement result is not greater than the specified error, it can be considered that thermal equilibrium has been achieved.
JB/T6307.11992
5.1.3 Reference point position: the geometric center point of the long side of the bottom plate of the module housing, with a point depth of 1mm; or given by the manufacturer. 5.1.4 Method for measuring reference point temperature (T) The reference point temperature is measured using a thermistor with negligible heat capacity. To ensure that the thermal resistance between the thermistor and the bottom plate of the module housing can be ignored, flux, fixtures or clamps are used to make the thermistor and the bottom plate of the housing reliably close. For the case where the reference point is 1mm deep into the surface, a thermocouple with a cross-sectional diameter of no more than 0.25mm is inserted into the hole for measurement. The hot end of the thermocouple should be welded to form a small ball (the diameter of the solder ball should be less than 0.8mm), and it cannot be formed by twisting or soldering. The hot end of the thermocouple is inserted into the reference point hole, and the metal at the edge of the hole is tapped to cover the thermocouple ball, so that the thermocouple is in tight contact with the bottom plate of the housing. Short circuit is not allowed at the hot end, and the cold end of the thermocouple should be reliably maintained at 0℃ or a certain temperature value. 5.2 Thermal resistance (Ra)
Measurement of thermal resistance (or transient thermal impedance) is based on the use of thermistor parameters as the equivalent junction temperature. Usually, the forward voltage of the chip at a small percentage of the rated current is used as the thermistor parameter. The accuracy of this method is not specified, but it should comply with 5.2.4. 5.2.1 Purpose
Measure the thermal resistance between the junction and the reference point of the chip in the module. 5.2.2 Principle of the method
Apply two different dissipated powers P, and P, adjust the cooling conditions so that the chip reaches the same junction temperature, measure the temperatures T, and T of the module reference point, use the thermistor voltage to check whether the junction temperature is the same, and calculate the thermal resistance according to formula (1). Raa
5.2.3 Principle circuit and requirements
Figure 3 Thermal resistance test circuit
Adjustable constant current source, this power supply should be able to output load current G1-
(heating current) I, which makes the junction temperature of the chip in the test module reach or approach the rated junction temperature, and generate dissipated power P in the junction of the chip; DC reference current (thermal current) for monitoring its junction temperature; S2
-an electronic switch that should be closed when the load current is interrupted; an electronic switch that periodically interrupts the load current I in a short period of time after the load current is periodically cleared; PV-zero position method (balance elimination method) voltmeter; a wattmeter that indicates I, which generates dissipated power in the junction, PW-
If it is necessary to test the thermal resistance of a single chip, the circuit in Figure 3 is also used. 5.2.4 Notes
When switching from load current I, to reference current I, a transient voltage is generated due to excess charge carriers. If the module under test contains ferromagnetic materials, a transient voltage will also be generated. Therefore, switch S2 should not be closed before these transient effects disappear. b. Usually the reference current I, should be selected to be large enough to keep the entire junction area conductive; c. The load current I, in 5.2.3 can be zero, that is, the dissipated power P is also zero, then the reference point temperature T, in formula (1) is equal to the equivalent junction temperature when the power P: is applied. bzxZ.net
5.2.5 Specified conditions
JB/T 6307.11992
The load current: The power generated should make the equivalent junction temperature reach or approach Tm, which is usually the rated forward average current Ip、T(o) Temperature when switch S is disconnected (t=0), ℃; TT——Temperature at time t, C;
Testing of rated value (limit value)
6.1 Reverse non-repetitive peak voltage (VRm) 6.1.1 Purpose
Under specified conditions, test the reverse non-repetitive peak voltage rating of the two chips in the module. 6.1.2 Principle circuit and requirements
Figure 5 Reverse non-repetitive peak voltage test circuit This E
VD——Diode that provides negative half-cycle voltage, so that only the reverse resistance of the chip in the tested module is tested; S--Electromechanical switch or electronic switch that realizes the application of reverse half-cycle power supply voltage to E (conduction angle is approximately 180\); R protection resistor,
Specified conditions
Junction temperature, 25℃ and Tm;
PV——Peak reading voltmeter.
The duration of the half-cycle pulse is approximately 10ms. If otherwise specified, it can be 8.3.1 or 0.1ms; the number of pulses or repetition frequency is not more than 5Hz; the test voltage is reverse non-repetitive peak voltage (VrsM). Test procedure
The AC power supply voltage is set to zero;
Open the switch S to allow the AC power supply voltage to rise to the specified value of the reverse non-repetitive peak voltage; close the switch S during the reverse half cycle and apply the specified reverse non-repetitive peak voltage to the two chips respectively; (2)
After the test, measure the reverse repetitive peak current of the two chips according to 4.1. If both meet the specified values of the product standard, the reverse non-repetitive peak voltage rating is confirmed.
6.2 Forward (non-repetitive) surge current (Irs) 6.2.1 Purpose
JB/T 6307.1—1992
Under specified conditions, the forward (non-repetitive) surge current rating of the chip in the module is tested. 6.2.2 Principle circuit and requirements
Figure 6 Forward (non-repetitive surge current test circuit PA-peak reading ammeter;
VD1-diode blocking the forward voltage provided by transformer T2; R1-resistor for setting surge current, the resistance of this resistor should be greater than the forward resistance of diode VD1; R2-protection resistor, its resistance value should be as small as possible; electromechanical switch or electronic switch with conduction angle: S1-approximately 180° during the forward (surge) half cycle T1-high current low voltage transformer that supplies power to the forward (surge)
half cycle through S1. Its current waveform should basically be a positive frequency with a duration of approximately 10ms (or 8.3ms) and a repetition rate of approximately 50 (or 60) Hz. Half-wave; T2 - a low-current high-voltage transformer that supplies power to the reverse half-cycle through a two-plate tube VD1. If this transformer is fed by a separate current, its phase sequence must be the same as the phase sequence of reading power to T1, and its voltage waveform should be basically a sinusoidal half-wave; PV -
- a peak reading voltmeter.
If necessary, a diode VD2 and its connected switch S2 or a resistor R3 and its series switch S2 can be connected between points X and Y. VD2 is a balanced diode, and its forward resistance is approximately equal to the forward resistance of a single chip of the module under test. If resistor R3 is used, its resistance should be alternated with the forward resistance of a single chip of the module under test. S2 is an electromechanical switch or an electronic switch, and its conduction angle is approximately 180° during the reverse half-cycle of transformer T1. || tt||6.2.3 Specified conditions
Junction temperature before surge: Tjm;
Reverse peak voltage: 0.5VkRM, 0.8VM or VRM when otherwise specified Forward (non-repetitive) surge current, according to product standards: The maximum impedance of the reverse voltage source should be as small as possible to meet the requirements of item b; The frequency of each surge, unless otherwise specified, is one cycle; The number of surges, according to product standards;
The measurement limit after the test, according to product standards. 6.2.4 Test procedure
The voltage and current power supply are set to zero:
Install the test module into the test bench according to its polarity mark and reach its temperature condition, and adjust the reverse peak voltage displayed on the bee value reading instrument PV to the specified value.
Adjust the resistor R so that the forward surge current displayed on the peak reading meter PA reaches the specified value, and test the chips in the module one by one according to the specified number of times the forward surge current is applied. d.
After the test, measure the chips in the module one by one according to the inspection items specified in the product standard. If the specified value is met, the tested module is considered to have passed this test.
6.3.1 Purpose
JB/T6307.11992
Under specified conditions, test the It value of the chip in the module, or test the I\t-t curve. 6.3.2 Method Principle
It test is essentially a non-repetitive surge current test with a duration less than the power frequency sinusoidal half wave (range of 1 to 10ms). The I\t value can be obtained by integrating the surge current i with its duration t Jpidt. By changing the duration, the I\t value at each time point in the half wave can be obtained, thereby obtaining the It curve (as shown in Figure 7).
Iesm
(X10'A)
(x10'A*.S）
tw(ms)
Pt curve
't curve;
IpsM curve
Figure 8 Pt test current waveform
Ism(t.-t)
Where: IpsM——surge current peak, A; t-—sine half-wave bottom width defined in Figure 8, ms. For a half cycle of 50Hz power frequency (bottom width 10ms), the above formula becomes: 6.3.3 Principle circuit and requirements
't=0.005Rism（A*·s)
JB/T6307.11992
Figure 9 Test circuit
R3-Non-inductive resistor for observing forward current, C, L, R.
-Capacitor for generating forward current waveform,
Inductor, resistor;
Peak reading voltmeter,
The surge current waveform is determined by C, L, and R2 according to the following formula. For the decaying oscillation waveform, it is determined according to formulas (5), (6), and (7): C=0.53
For the sinusoidal waveform, it is determined according to formulas (8), (9), and (10): Ipe
Wherein: V,—charging voltage of capacitor C, V; t,—base width of the sine half-wave defined as shown in Figure 8, ms; IpsM——peak value of surge current, A,
In order to make the voltage applied to a single chip in the test module as low as possible, as an improvement to the circuit, the discharge current of C can be used to pass through a low-voltage transformer first and then through the chip of the test module. In this way, the voltage of capacitor C can be charged to a higher level, which is conducive to generating large current pulses. 6.3.4 Specified conditions
Junction temperature before surge; Tm or 25℃;
Surge current waveform is a half-sine wave peak value Irsu according to product standards, bottom width t, 10ms when Is is given as a single value, and 4 to 5 points (such as 1, 3, 5, 7, 9ms) should be taken between 110ms when the curve is given; c
Number of surges: should be specified, and the interval between each two times is determined by the thermal equilibrium condition; no reverse voltage is applied immediately after the surge.
Test procedure
value):
Heat the module under test to the specified junction temperature:
Adjust C, L, and R2 so that the chip of the module under test passes the surge current IrsM with specified peak value and bottom width (corresponding to the verified I't). After the specified number of surges, the reverse repetitive peak current and forward peak voltage are measured according to 4.1 and 4.2. If the product standard is met
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