This standard specifies the test method for the optoelectronic parameters of superluminescent diode components. This standard applies to the test of optoelectronic parameters of superluminescent diode components (hereinafter referred to as "components"). SJ 20785-2000 Test method for superluminescent diode components SJ20785-2000 Standard download decompression password: www.bzxz.net

Military Standard of the Electronic Industry of the People's Republic of China FL5980
SJ 20785—2000
Measuring methods for super luminescent diode module
2000-10-20 release
2000-10-20 implementation
Scope of approval of the Ministry of Information Industry of the People's Republic of China
2 Reference documents
3 Definitions
General requirements
5 Detailed requirements
Forward voltage
Reverse voltage
Differential resistance·
Differential radiated power efficiency,
Total capacitance
Radiated power·
2002 Repeatability of radiated power
1000 class electrical characteristics test
2000 class optical characteristics test
2003 Bee value Emission wavelength and spectral radiation bandwidth 2004 Spectral modulation coefficient
2005 Polarization extinction ratio ...
3000 Type photoelectric characteristic test
Pulse response characteristics
3002 Small signal cut-off frequency
3003 Spectral radiation bandwidth variation with working current 4000 Type temperature characteristic test
4001 Radiant power variation with temperature: 4002 Peak emission wavelength and spectral radiation bandwidth variation with temperature 4003 Cooling current ..
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People's Republic of China Electronics Industry Military Standard Superluminescent Diode Component Test Method Measuring methods for super luminescent diode module1 Scope
1.1 Subject content
This standard specifies the test methods for the optoelectronic parameters of super luminescent diode components1.2 Scope of application
SJ207B5--2000
This standard applies to the test of optoelectronic parameters of super luminescent diode components (hereinafter referred to as "components").2 Reference documents
GB/T15651-1995 Semiconductor devices Discrete devices and integrated circuits Part 5 Optoelectronic devices3 Definitions
Unless otherwise specified, the symbols and definitions used in this standard shall comply with the provisions of GB/T15651 and this standard.3.1 Super luminescent diode SLDSuperluminescent diode is a light-emitting diode with light amplification but insufficient feedback to produce laser oscillation.3.2 Super luminescent diode component SLD component Super Iuminescentdiodemodule is a component consisting of a superluminescent diode, a thermal stabilization device and/or a blue control device for output optical power, and a pigtail/cable.
3.3Forward voltage Vforward voltage
The voltage drop between the two electrodes of the SLD when the forward current through the component is a specified value. 3.4Reverse voltage Vk reversevoitageThe voltage drop between the two output electrodes of the SLD when the reverse current through the component is a specified value. 3.5Differential resistance ra differential resistanceThe ratio of the voltage increment between the two electrodes of the SLD to the current increment through the component in the linear region of the IV characteristic under the specified forward working state.
3.6Total capacitance Ctot total capacitanceThe total capacitance at both ends of the SLD under the specified polarization bias and the specified frequency. 3.7Polarization extinction ratio $polarized extinction ratioThe ratio of the maximum transmission value to the minimum transmission value of the radiant power output by the component through the polarizer. 3.8 Spectral modulation coefficient m spectral modulus of modulation under the specified forward current, the component measured in the Fabry-Perot mode spectrum at the peak wavelength and its adjacent valley relative radiation power ratio to the sum of the difference and the sum of the relative radiation power, 3.9 spectral radiation bandwidth with forward current variation characteristics A1 (1) variation of spectral radiation bandwidth with forward current within the specified forward current range, the component spectral radiation bandwidth with the change of forward current. 3.10 radiant power with temperature characteristics p. (T) variation of radiant power with temperature within the specified forward current and specified temperature range, the component radiation power with the change of temperature characteristics.
3.11 Variation of peak-emission wavelength with temperature A, (T) variation of peak-emission wavelength with temperature
The characteristic of the peak-emission wavelength of the component changing with the temperature within the specified forward operating current and the specified temperature range.
3.12 Variation of spectral radiation bandwidth with temperature 4^ (T) variation of spectral radiation bandwidth with temperature
The characteristic of the spectral radiation bandwidth of the component changing with the temperature within the specified forward operating current and the specified temperature range.
3.13 Cooling current Ipecoolingcurrent The electric cooler current IPE required for the component to reach thermal equilibrium under the conditions of specified ambient temperature, forward current and heat sink temperature (thermistor value).
3.14 Repeatability of radiant power Repeatability of radiant power The ratio of the standard deviation of the radiant power of the component at different times to the absolute average value of the radiant power under the specified test conditions.
4 General requirements
4.1 Test conditions
Unless otherwise specified, the test of the optoelectronic parameters of the module shall be carried out under the conditions specified in this standard. 4.1.1 Standard atmospheric conditions
Temperature: 25°C±3°C:
Relative humidity: 20%~80%:
Air pressure: 86kPa~106kPa.
4.1.2 Arbitration standard atmospheric conditions
Temperature: 25°℃±1°℃;
Relative humidity: 48%~52%:
Air pressure: 86kPa~106 kPa.
4.1.3 Environmental conditions
a. The test environment shall be free of mechanical vibration and electromagnetic interference that may affect the test accuracy. b. Unless otherwise specified, the test of all optoelectronic parameters of the module shall be carried out under thermal equilibrium conditions. C. The test system shall be well grounded.
4.2 Test system and instruments and equipment
The accuracy of the test instruments shall meet the requirements of the test regulations and be qualified by the metrology department. During the verification period, - 2 -
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test according to the relevant operating procedures.
4.2.1 Temperature control power supply
SJ20785—2000
The instability, accuracy, output current and other indicators of the component temperature control power supply used in the test shall meet the requirements. 4.2.2 DC current source
The ripple factor of the DC current source used in the test is less than 1%, and the instability and output current within the given value range shall meet the requirements.
4.2.3 Ammeter, voltmeter
The range, resolution and measurement error of the ammeter and voltmeter used in the test shall meet the requirements. 4.2.4 Radiant power measuring instrument
The radiant power measuring instrument used in the test can be an optical power meter, photoelectric detection device, etc., and its accuracy, resolution, responsiveness, and spectral range should meet the requirements. 4.2.5 Spectral characteristic measuring instrument
The spectral characteristic measuring instrument used in the test can be a monochromator, spectrum analyzer, etc., and its accuracy, resolution, and sensitivity should meet the requirements. If the transmission coefficient of the monochromator and the sensitivity of the optical power meter are not constant within the required wavelength range, the recorded values ​​should be corrected. 4.2.6 Stress-free microscope
The internal stress and depolarization effect of the stress-free microscope used in the test should meet the requirements. 4.2.7 Polarizer
The polarizer used in the test can be a Glan prism, etc., and its polarization extinction ratio should be greater than 50αB, and the light transmittance should meet the requirements.
4.2.8 Pulse signal generator
The main requirements for the pulse signal generator used in the test are: the operating frequency, output pulse amplitude, rise time and fall time of the pulse signal generator should a.
meet the test requirements of the component.
b. It should have good frequency stability and high signal-to-noise ratio. 4.2.9 Signal generator
The main requirements for the sine signal generator used in the test are: a. It can provide sufficient power level range and level resolution; b. The output signal should have a high signal-to-noise ratio and low high-order harmonic components; c. The output signal should have high spectrum purity, and the clutter suppression should be less than 40dB within the range of ±10% of the main output frequency.
4.2.10 Time domain test instrument
The time domain test instrument used in the test can be an oscilloscope or a spectrum analyzer, and its bandwidth, sensitivity, accuracy and other indicators should meet the requirements.
4.2.11 Temperature control device
The temperature control accuracy, sensitivity, temperature control range and other indicators of the temperature control device used in the test should meet the requirements. 4.2.12 Multimeter
Multimeters, high-precision digital meters, etc. used in the test should meet the requirements for accuracy, instability, range and other indicators.
4.2.13 Capacitance meter
SJ 20785-2000
The accuracy, instability, range and other indicators of the capacitance meter used in the test should meet the requirements. 5 Detailed requirements
This test method is divided into:
a.1000 Class electrical characteristics test method
Method 1001 Forward voltage
Method 1002 Reverse voltage
Method 1003 Differential resistance
Method 1004 Differential radiated power efficiency
Total capacitance
Method 1005
b.2000 Class optical characteristics test method
Method 2001
Radiated power
Repeatability of radiated power
Method 2002
Method 2003 Peak emission wavelength and spectral radiation bandwidthMethod 2004 Polarization extinction ratio| |tt||Method 2005
Spectral modulation coefficient
c.3000 type photoelectric characteristics test method
Pulse response characteristics (rise time, delay time, fall time) Method 3001
Method 3002 Small signal cut-off frequency
Method 3003 Spectral radiation bandwidth variation with forward current characteristics d.4000 type
Temperature characteristics test method
Method 4001 Radiated power variation with temperature characteristics Peak emission wavelength and spectral emission bandwidth variation with temperature characteristics Method 4002
Method 4003 Cooling current
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SJ 20785—2000
1000 Class electrical characteristics test
Method 1001
Forward voltage
The voltage drop between the two electrodes of the SLD generated by the test component under the action of the specified forward bias current. 2 Test circuit diagram
See Figure 1001.
Where: A1——Component under test
G1 DC current source
G2——Temperature control power supply
P1—Ammeter
P2—Voltmeter
Figure 1001
3 Test steps
Connect the test system according to Figure 1001 and preset the instrument. 3.2 Adjust the DC current source so that the reading on the DC ammeter is the specified value. At this time, the reading on the DC voltmeter is the forward voltage of the component under test.
4 Specified conditions
The following details shall be specified in the detailed specification: Ambient temperature, heat sink temperature or tube shell temperature: - Forward bias current.
SJ20785—2000
Method 1002
Reverse voltage
Measure the reverse voltage drop between the two electrodes of the SLD when the reverse current through the component is the specified value. 2 Test circuit diagram
See Figure 1002.
Where: Al
Component under test
P——Ammeter
P2Voltmeter
GIDC voltage source.
Figure 1002
3 Test steps
3.1 Connect the test system according to Figure 1002 and perform instrument pre-test. 3.2 Adjust the DC voltage source so that the ammeter reading is the specified value. At this time, the reading on the voltmeter is the reverse voltage value. 4 Specified conditions
The following details should be specified in the detailed specification: - Ambient temperature or tube shell temperature:
- Reverse current.
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1 Purpose
SJ20785-2000
Method 1003
Differential resistance
Measure the differential resistance of the component in the forward working state. 2 Test circuit diagram
See Figure 1001.
3 Test steps
Connect the test system according to Figure 1001 and perform instrument presets. 3.1
3.2 Apply a specified forward bias current to the component. In the linear region of the IV characteristic of the component, adjust the forward bias current to Iz, and Iz respectively. At the same time, measure the corresponding forward operating voltage V, and Vrz and calculate the differential resistance according to formula (1003):
Where: △chip = Yp2-VFu, forward bias voltage, mV; A = IF2-/F1 forward bias current, mA;
ra—differential resistance, 2.
4 Specified conditions
The following details should be specified in the detailed specification: - ambient temperature, heat sink temperature or tube shell temperature; - operating current range. bzxz.net
(1003)
SJ20785—2000
Method 1004
Differential radiant power efficiency
Test the differential radiant power efficiency of the component.
2 Test circuit diagram
See Figure 1004.
Wherein: Al Component under test
GI——DC current source
G2 Temperature control power supply
B1——Optical power meter or photoelectric detection device E1 - Optical fiber cable
Figure 1004
3 Test steps
3.1 Connect the test system according to Figure 1004 and perform instrument preset. B1
3.2 Apply the specified forward bias current to the component under test so that the corresponding radiation power meets the specified value, read the specified radiation power and the corresponding m
3.3 Change the forward current to 3 and read the corresponding radiation power Φ value. Calculate the differential radiation power efficiency value according to formula (1004):
Wherein: ned——Differential radiation power efficiency: 0
A中=中-p,中. is the radiated power, mW (or μW): Ap=Iez-m is the forward bias current, mA. 4 Specified conditions
The following details shall be specified in the detailed specification: - Ambient temperature, heat sink temperature:
Operating bias current.
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(1004)
1 Purpose
SJ 20785—2000
Method 1005
Total capacitance
Measure the total capacitance of the component under specified conditions. 2 Test steps
2.1 Test method 1
2.1.1 Test circuit diagram
See Figure 1005—1.
Where: A［-
, component under test
P—capacitance meter
P2—— voltmeter
G1- voltage source
Cl—— isolation capacitance
LI inductance
2.1.2 Test steps
Figure 1005-1
2.1.2.1 Connect the test system according to Figure 1005 and perform instrument preset. G
2.1.2.2 Adjust the voltage source, apply the specified forward bias and frequency to the component, adjust the capacitance meter, deduct the capacitance C from the reading on the dial of the capacitance meter, and the equivalent value is the total capacitance of the component. Its capacitance value is calculated according to formula (1005):
Where: C——-capacitance value on the capacitance meter, pF: C-isolation capacitance, pF.
2. 2 Test method 2
2.2.1 Test circuit diagram
See Figure 1005-2.
(1005)
Wherein: A Component under test
F1 Direct-reading capacitance meter
2.2.2 Test steps
sJ 20785--2000
Figure 1005-2
2.2.2.1 Connect the test system according to Figure 1005-2 and perform instrument presets, A
2.2.2.2 Apply the specified forward bias voltage and frequency to the component and read the measured capacitance value on the direct reading capacitance meter. 3 Specified conditions
The following details should be specified in the detailed specification: ambient temperature or case temperature;
Forward bias voltage;
Frequency provided by the capacitance meter.
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