title>Semiconductor discrete device-Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS4 GP,GT and GCT classes - SJ 20012-1992 - Chinese standardNet - bzxz.net
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Semiconductor discrete device-Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS4 GP,GT and GCT classes
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Standard ID:
SJ 20012-1992
Standard Name:Semiconductor discrete device-Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS4 GP,GT and GCT classes
This specification specifies the detailed requirements for CS4 type silicon N-channel wax type field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-8585 "General Specification for Semiconductor Discrete Devices". SJ 20012-1992 Semiconductor Discrete Devices GP, GT and GCT Level CS4 Type Silicon N-channel Depletion Type Field Effect Transistor Detailed Specification SJ20012-1992 Standard download decompression password: www.bzxz.net
This specification specifies the detailed requirements for CS4 type silicon N-channel wax type field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-8585 "General Specification for Semiconductor Discrete Devices".
Some standard content:
1 Scope People's Republic of China Electronic Industry Military Standard Semiconductor discrete devices GP, GT and GCT grades Semiconductor discrete deviceDetail specification for silicon N-channel deplition mode field-effect transistor of typecs4GP,GTandGCT elasses 1.1 Subject content SJ20012-92 This specification specifies the detailed requirements for CS4 type silicon N-channel junction field-effect transistor (hereinafter referred to as device). This type of device provides three levels of product assurance (GP, GT and GCT grades) in accordance with GJB33-85 "General Specification for Semiconductor Discrete Devices". China Electronics Industry Corporation Issued on February 1, 1992, implemented on May 1, 1992 1.2 Dimensions SJ20012—92 The dimensions shall conform to A301B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1 Figure 1 Dimensions 1.3 Maximum Rated Values TA=25℃ Note: 1) When Tx>25℃, derate linearly at a rate of 1.33mW/℃. 2 Lead terminal polarity: Unit: mm A3-01B Tam and Tag -55~+175 1.4 Main electrical characteristics (T=25℃) Symbol (unit) Ipss(mA) VGstan(V) lyal(μs) C.) (pF) | ||f-1 kHz Vrs=10V Ip—3mA f=1MHz Vps10v In=3mA f=1MHz Vps=10V Ip=3mA f-30MHz Note: 1) Pulse method (see 4.5.1). 2C gear, tested under VGs=0 condition. 2 Reference documents SJ20012—92 All models Other models All models All models Other models Minimum value Maximum value GB4586--84 GB7581—87 GJB33-85 GJB128—-86 3 Requirements 3.1 Detailed requirements SJ20012—92 Test methods for field effect transistors Dimensions of discrete semiconductor devices General specification for discrete semiconductor devices Test methods for discrete semiconductor devices All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design structure and dimensions The design structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or immersion tin. When the terminal material and coating are required to be selected or otherwise required, they shall be clearly specified in the contract or order (see 6). 3.3 Marking The marking of the device shall comply with the provisions of GJB33. 4 Quality assurance provisions 4.1 Sampling and inspection Sampling and inspection shall comply with the provisions of GJB33 and this specification. 4.2 Qualification inspection Qualification inspection shall comply with the provisions of GJB33. 4.3 Screening (for GT and GCT grades only) Screening shall comply with Table 2 of GJB33 and this specification. The following tests shall be carried out in accordance with Table 1 of this specification. Devices exceeding the specified limit values shall not be accepted. GJB33 Table 2 3. Thermal shock 6. High temperature reverse bias 7. Intermediate test 8. Electrical aging 9. Final test 4.3.1 Power aging conditions Test or test GT and GCT grade Low temperature should be 55℃, high temperature should be +175℃ Not required Not required IGss1, Inss and |y Group A2 in Table 1 of this specification: AIpss=±10% of initial value; VGs=-24VVrs0;Ta=150℃ 4.4 Quality-Conformity Inspection △lyl=±20% of initial value SJ20012--92 Quality conformity inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A Inspection Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B Inspection Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and variation (A) requirements shall be carried out in accordance with the steps in Table 4 of this specification. 4.4.3 Group C inspection Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and change (△) requirements shall be carried out in accordance with the steps in Table 4 of this specification. 4.5 Inspection and test methods Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions. 4.5.1 Pulse test Pulse test shall be in accordance with the provisions of 3.3.2.1 of GJB128. Table 1 Inspection of Group A Inspection or test Group A1 Appearance and mechanical inspection Group A2 Gate-source breakdown voltage Gate-source cut-off current Zero gate voltage drain current Gate-source cut-off voltage GJB128 GB4586 Han source short circuit IGs--lμA Drain-source short circuit VGs---10V Gate-source short circuit Vns=10V Pulse method (see 4.5.1) Vps=10V Ins=lμA V(BR)G SS Vos(of) Limit value Minimum value Maximum value Inspection or test Group A3 High temperature operation: Gate-source cut-off current Group A4 Small signal common source short circuit Forward transconductance Small signal common source short circuit Input capacitance Small signal common source short circuit Feedback capacitance Small signal common source power SJ2001292 Continued Table 1Group A Inspection GB4586 Tamb125℃ Drain-source short circuit VGs= -10V Vps=10V Ip=3mA\ Pulse method (see 4.5.1) Vrs=10V Ip=3mA) f=1MHz Vps==10V Ip=3mA) f-1MHz Vns=10V Ip=3mA) f-30MHz LTPD symbol Limit value Minimum value Maximum value Inspection or test Common source point noise coefficient Group A5 and A6 Not applicable Group A7 Low temperature operation: Small signal common source short circuit Forward transconductance S J20012-92 Continued Table 1 Group A Test GB4586 Vns=10V Ip=3mA) f=30MHz RG=1MQ Tamb=-55℃ Vrs=10V f=1kHz Pulse method (see 4.5.1) Note: 1) C gear, tested under Vc0 conditions Table 2 Group B Test Test or test Group B1 Solderability Durability of marking Group B2 Thermal shock (temperature cycle) GJB12 8 Test condition C, but the temperature should be TA—55℃ T=+175℃ Limit value Minimum value Maximum value Inspection or test a. Detailed leak detection b. Coarse leak detection Final test B3 group Steady-state working life (High temperature reverse bias) Final test B4 group Open width internal inspection (Design verification) Bond strength B5 group Not applicable B6 group High temperature life (Not working)|| tt||Final test: Inspection or test Group C1 Dimensions Group C2 Thermal shock (glass stress) Terminal strength SJ20012--92 Continued Table 2Group B inspection GJB128 See Table 4, steps 1, 3 and 4 TA=150℃ Vos--24V See Table 4, steps 2, 3, 4, 5 and 6 Test condition A All internal leads of each device are subjected to tensile test separately TA=175℃ See Table 4, steps 2 and 6. Table 3 Group C inspection GJB128 See Figure 1 Test condition A Test condition E 1 device per batch, 0 failure 20(Cm0) Inspection or test a. Detailed leak detection b. Coarse leak detection Comprehensive temperature/humidity Cycle test Appearance and mechanical inspection Final test Group C3 Variable frequency vibration Constant acceleration Final test Group C4 (When necessary) C5 Group Not applicable C6 Group Steady-state working life (High temperature reverse bias) Final test Gate-source cut-off current SJ20012--92 Continued Table 3 Group C test GJB128 See Table 4, steps 1, 3 and 4 See Table 4, steps 1, 3 and 4 TA=150℃ VGs=-24V See Table 4, steps 2, 3, 4, 5 and 6 Table 4 Final test of Group B and Group C GB4586 Drain-source short circuit||tt| |Vcs--10V Minimum value In=10 Maximum value Gate-source cutoff current Zero gate voltage drain current Small signal common source short circuit Forward transconductance Zero gate voltage drain current Small signal common source short circuit Forward transconductance SJ20012—92 Continued Table 4 Final test of Group B and Group C GB4586 Xiao source short circuit Vcs=-10V Gate-source short circuit Vps=-10V Pulse method (see 4.5.1)||t t||Vrs-10V Ip=3mA\ f=1kHz Pulse method (see 4.5.1) Gate-source short circuit Vps-10V Pulse method (see 4.5..1) Vps=10V Ip=3mA) Pulse method (see 4.5.1) Note: 1) C gear is tested under Vcs=0 5 Delivery preparation Minimum value Maximum value Initial value±15% Initial value±25% Packing requirements should be in accordance with the provisions of GJB33. Notes SJ20012-92 The required terminal materials and coatings shall be specified in the contract or order form (see 3.2.1). If required by the user, the typical characteristic curve may be specified in the contract or order form. Comparison between CS4 and factory model 3DJ7: Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification are: Wang Changfu, Zhang Zongguo, Wu Zhilong, Liu Meiying, etc. Project code: B91018.Rough leak detection Comprehensive temperature/humidity Cyclic test Appearance and mechanical inspection Final test C3 group Variable frequency vibration Constant acceleration Final test C4 group (When required) C5 group Not applicable C6 group Steady-state working life (High temperature reverse bias) Final test Gate-source cut-off current SJ20012--92| |tt||Continued Table 3 Group C test GJB128 See Table 4, steps 1, 3 and 4 See Table 4, steps 1, 3 and 4 TA=150℃ VGs=-24V See Table 4, steps 2, 3, 4, 5 and 6 Table 4 Final test of Group B and Group C GB4586 Drain-source short circuit Vcs--10V Minimum value In=10 Maximum value Gate-source cut-off current Zero gate Drain current Small signal common source short circuit Forward transconductance Zero gate voltage drain current Small signal common source short circuit Forward transconductance SJ20012—92 Continued Table 4 Final test of group B and group C GB4586 Xiao source short circuit Vcs=-10V Gate-source short circuit Vps=-10V Pulse method (see 4.5.1) Vrs-10V Ip=3mA\ f=1kHz Pulse method (see 4.5.1) Gate-source short circuit Vps-10V Pulse method (see 4.5..1) Vps=10V Ip=3mA) Pulse method (see 4.5.1) Note: 1) C block is tested under Vcs=0 condition 5 Delivery preparation Minimum value Maximum value Initial value ±15% Initial value ±25% Packing requirements shall comply with the provisions of GJB33. Notes SJ20012-92 The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). If the user unit requires, the typical characteristic curve can be specified in the contract or order. Comparison between CS4 and factory model 3DJ7: Additional instructions: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Zhang Zongguo, Wu Zhilong, Liu Meiying, etc. Project code: B91018.Rough leak detection Comprehensive temperature/humidity Cyclic test Appearance and mechanical inspection Final test C3 group Variable frequency vibration Constant acceleration Final test C4 group (When required) C5 group Not applicablebZxz.net C6 group Steady-state working life (High temperature reverse bias) Final test Gate-source cut-off current SJ20012--92| |tt||Continued Table 3 Group C test GJB128 See Table 4, steps 1, 3 and 4 See Table 4, steps 1, 3 and 4 TA=150℃ VGs=-24V See Table 4, steps 2, 3, 4, 5 and 6 Table 4 Final test of Group B and Group C GB4586 Drain-source short circuit Vcs--10V Minimum value In=10 Maximum value Gate-source cut-off current Zero gate Drain current Small signal common source short circuit Forward transconductance Zero gate voltage drain current Small signal common source short circuit Forward transconductance SJ20012—92 Continued Table 4 Final test of group B and group C GB4586 Xiao source short circuit Vcs=-10V Gate-source short circuit Vps=-10V Pulse method (see 4.5.1) Vrs-10V Ip=3mA\ f=1kHz Pulse method (see 4.5.1) Gate-source short circuit Vps-10V Pulse method (see 4.5..1) Vps=10V Ip=3mA) Pulse method (see 4.5.1) Note: 1) C block is tested under Vcs=0 condition 5 Delivery preparation Minimum value Maximum value Initial value ±15% Initial value ±25% Packing requirements shall comply with the provisions of GJB33. Notes SJ20012-92 The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). If the user unit requires, the typical characteristic curve can be specified in the contract or order. Comparison between CS4 and factory model 3DJ7: Additional instructions: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Zhang Zongguo, Wu Zhilong, Liu Meiying, etc. Project code: B91018. Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.