This specification specifies the detailed requirements for CS4 type silicon N-channel wax type field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-8585 "General Specification for Semiconductor Discrete Devices". SJ 20012-1992 Semiconductor Discrete Devices GP, GT and GCT Level CS4 Type Silicon N-channel Depletion Type Field Effect Transistor Detailed Specification SJ20012-1992 Standard download decompression password: www.bzxz.net
This specification specifies the detailed requirements for CS4 type silicon N-channel wax type field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-8585 "General Specification for Semiconductor Discrete Devices".

1 Scope
People's Republic of China Electronic Industry Military Standard Semiconductor discrete devices
GP, GT and GCT grades
Semiconductor discrete deviceDetail specification for silicon N-channel deplition mode field-effect transistor of typecs4GP,GTandGCT elasses
1.1 Subject content
SJ20012-92
This specification specifies the detailed requirements for CS4 type silicon N-channel junction field-effect transistor (hereinafter referred to as device). This type of device provides three levels of product assurance (GP, GT and GCT grades) in accordance with GJB33-85 "General Specification for Semiconductor Discrete Devices".
China Electronics Industry Corporation Issued on February 1, 1992, implemented on May 1, 1992
1.2 Dimensions
SJ20012—92
The dimensions shall conform to A301B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1
Figure 1 Dimensions
1.3 Maximum Rated Values
TA=25℃
Note: 1) When Tx>25℃, derate linearly at a rate of 1.33mW/℃. 2
Lead terminal polarity:
Unit: mm
A3-01B
Tam and Tag
-55~+175
1.4 Main electrical characteristics (T=25℃)
Symbol (unit)
Ipss(mA)
VGstan(V)
lyal(μs)
C.） (pF) | ||f-1 kHz
Vrs=10V
Ip—3mA
f=1MHz
Vps10v
In=3mA
f=1MHz
Vps=10V
Ip=3mA
f-30MHz
Note: 1) Pulse method (see 4.5.1).
2C gear, tested under VGs=0 condition.
2 Reference documents
SJ20012—92
All models
Other models
All models
All models
Other models
Minimum value
Maximum value
GB4586--84
GB7581—87
GJB33-85
GJB128—-86
3 Requirements
3.1 Detailed requirements
SJ20012—92
Test methods for field effect transistors
Dimensions of discrete semiconductor devices
General specification for discrete semiconductor devices
Test methods for discrete semiconductor devices
All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design structure and dimensions
The design structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating
The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or immersion tin. When the terminal material and coating are required to be selected or otherwise required, they shall be clearly specified in the contract or order (see 6). 3.3 Marking
The marking of the device shall comply with the provisions of GJB33.
4 Quality assurance provisions
4.1 Sampling and inspection
Sampling and inspection shall comply with the provisions of GJB33 and this specification. 4.2 Qualification inspection
Qualification inspection shall comply with the provisions of GJB33.
4.3 Screening (for GT and GCT grades only)
Screening shall comply with Table 2 of GJB33 and this specification. The following tests shall be carried out in accordance with Table 1 of this specification. Devices exceeding the specified limit values ​​shall not be accepted.
GJB33 Table 2
3. Thermal shock
6. High temperature reverse bias
7. Intermediate test
8. Electrical aging
9. Final test
4.3.1 Power aging conditions
Test or test
GT and GCT grade
Low temperature should be 55℃, high temperature should be +175℃ Not required
Not required
IGss1, Inss and |y
Group A2 in Table 1 of this specification:
AIpss=±10% of initial value;
VGs=-24VVrs0;Ta=150℃
4.4 Quality-Conformity Inspection
△lyl=±20% of initial value
SJ20012--92
Quality conformity inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A Inspection
Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B Inspection
Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and variation (A) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.4.3 Group C inspection
Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and change (△) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions. 4.5.1 Pulse test
Pulse test shall be in accordance with the provisions of 3.3.2.1 of GJB128. Table 1 Inspection of Group A
Inspection or test
Group A1
Appearance and mechanical inspection
Group A2
Gate-source breakdown voltage
Gate-source cut-off current
Zero gate voltage drain current
Gate-source cut-off voltage
GJB128
GB4586
Han source short circuit
IGs--lμA
Drain-source short circuit
VGs---10V
Gate-source short circuit
Vns=10V
Pulse method (see 4.5.1)
Vps=10V
Ins=lμA
V(BR)G SS
Vos(of)
Limit value
Minimum value
Maximum value
Inspection or test
Group A3
High temperature operation:
Gate-source cut-off current
Group A4
Small signal common source short circuit
Forward transconductance
Small signal common source short circuit
Input capacitance
Small signal common source short circuit
Feedback capacitance
Small signal common source power
SJ2001292
Continued Table 1Group A Inspection
GB4586
Tamb125℃
Drain-source short circuit
VGs= -10V
Vps=10V
Ip=3mA\
Pulse method (see 4.5.1)
Vrs=10V
Ip=3mA)
f=1MHz
Vps==10V
Ip=3mA)
f-1MHz
Vns=10V
Ip=3mA)
f-30MHz
LTPD symbol
Limit value
Minimum value
Maximum value
Inspection or test
Common source point noise coefficient
Group A5 and A6
Not applicable
Group A7
Low temperature operation:
Small signal common source short circuit
Forward transconductance
S J20012-92
Continued Table 1 Group A Test
GB4586
Vns=10V
Ip=3mA)
f=30MHz
RG=1MQ
Tamb=-55℃
Vrs=10V
f=1kHz
Pulse method (see 4.5.1)
Note: 1) C gear, tested under Vc0 conditions
Table 2 Group B Test
Test or test
Group B1
Solderability
Durability of marking
Group B2
Thermal shock (temperature cycle)
GJB12 8
Test condition C, but the temperature should be
TA—55℃
T=+175℃
Limit value
Minimum value
Maximum value
Inspection or test
a. Detailed leak detection
b. Coarse leak detection
Final test
B3 group
Steady-state working life
(High temperature reverse bias)
Final test
B4 group
Open width internal inspection
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)|| tt||Final test:
Inspection or test
Group C1
Dimensions
Group C2
Thermal shock (glass stress)
Terminal strength
SJ20012--92
Continued Table 2Group B inspection
GJB128
See Table 4, steps 1, 3 and 4
TA=150℃
Vos--24V
See Table 4, steps 2, 3, 4, 5 and 6
Test condition A
All internal leads of each device
are subjected to tensile test separately
TA=175℃
See Table 4, steps 2 and 6.
Table 3 Group C inspection
GJB128
See Figure 1
Test condition A
Test condition E
1 device per batch, 0 failure
20(Cm0)
Inspection or test
a. Detailed leak detection
b. Coarse leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test
Group C3
Variable frequency vibration
Constant acceleration
Final test
Group C4
(When necessary)
C5 Group
Not applicable
C6 Group
Steady-state working life
(High temperature reverse bias)
Final test
Gate-source cut-off current
SJ20012--92
Continued Table 3 Group C test
GJB128
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA=150℃
VGs=-24V
See Table 4, steps 2, 3, 4, 5 and 6
Table 4 Final test of Group B and Group C
GB4586
Drain-source short circuit||tt| |Vcs--10V
Minimum value
In=10
Maximum value
Gate-source cutoff current
Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
SJ20012—92
Continued Table 4 Final test of Group B and Group C
GB4586
Xiao source short circuit
Vcs=-10V
Gate-source short circuit
Vps=-10V
Pulse method (see 4.5.1)||t t||Vrs-10V
Ip=3mA\
f=1kHz
Pulse method (see 4.5.1)
Gate-source short circuit
Vps-10V
Pulse method (see 4.5..1)
Vps=10V
Ip=3mA)
Pulse method (see 4.5.1)
Note: 1) C gear is tested under Vcs=0
5 Delivery preparation
Minimum value
Maximum value
Initial value±15%
Initial value±25%
Packing requirements should be in accordance with the provisions of GJB33.
Notes
SJ20012-92
The required terminal materials and coatings shall be specified in the contract or order form (see 3.2.1). If required by the user, the typical characteristic curve may be specified in the contract or order form. Comparison between CS4 and factory model 3DJ7:
Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification are: Wang Changfu, Zhang Zongguo, Wu Zhilong, Liu Meiying, etc. Project code: B91018.Rough leak detection
Comprehensive temperature/humidity
Cyclic test
Appearance and mechanical inspection
Final test
C3 group
Variable frequency vibration
Constant acceleration
Final test
C4 group
(When required)
C5 group
Not applicable
C6 group
Steady-state working life
(High temperature reverse bias)
Final test
Gate-source cut-off current
SJ20012--92| |tt||Continued Table 3 Group C test
GJB128
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA=150℃
VGs=-24V
See Table 4, steps 2, 3, 4, 5 and 6
Table 4 Final test of Group B and Group C
GB4586
Drain-source short circuit
Vcs--10V
Minimum value
In=10
Maximum value
Gate-source cut-off current
Zero gate Drain current
Small signal common source short circuit
Forward transconductance
Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
SJ20012—92
Continued Table 4 Final test of group B and group C
GB4586
Xiao source short circuit
Vcs=-10V
Gate-source short circuit
Vps=-10V
Pulse method (see 4.5.1)
Vrs-10V
Ip=3mA\
f=1kHz
Pulse method (see 4.5.1)
Gate-source short circuit
Vps-10V
Pulse method (see 4.5..1)
Vps=10V
Ip=3mA)
Pulse method (see 4.5.1)
Note: 1) C block is tested under Vcs=0 condition
5 Delivery preparation
Minimum value
Maximum value
Initial value ±15%
Initial value ±25%
Packing requirements shall comply with the provisions of GJB33.
Notes
SJ20012-92
The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). If the user unit requires, the typical characteristic curve can be specified in the contract or order. Comparison between CS4 and factory model 3DJ7:
Additional instructions:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Zhang Zongguo, Wu Zhilong, Liu Meiying, etc. Project code: B91018.Rough leak detection
Comprehensive temperature/humidity
Cyclic test
Appearance and mechanical inspection
Final test
C3 group
Variable frequency vibration
Constant acceleration
Final test
C4 group
(When required)
C5 group
Not applicablebZxz.net
C6 group
Steady-state working life
(High temperature reverse bias)
Final test
Gate-source cut-off current
SJ20012--92| |tt||Continued Table 3 Group C test
GJB128
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA=150℃
VGs=-24V
See Table 4, steps 2, 3, 4, 5 and 6
Table 4 Final test of Group B and Group C
GB4586
Drain-source short circuit
Vcs--10V
Minimum value
In=10
Maximum value
Gate-source cut-off current
Zero gate Drain current
Small signal common source short circuit
Forward transconductance
Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
SJ20012—92
Continued Table 4 Final test of group B and group C
GB4586
Xiao source short circuit
Vcs=-10V
Gate-source short circuit
Vps=-10V
Pulse method (see 4.5.1)
Vrs-10V
Ip=3mA\
f=1kHz
Pulse method (see 4.5.1)
Gate-source short circuit
Vps-10V
Pulse method (see 4.5..1)
Vps=10V
Ip=3mA)
Pulse method (see 4.5.1)
Note: 1) C block is tested under Vcs=0 condition
5 Delivery preparation
Minimum value
Maximum value
Initial value ±15%
Initial value ±25%
Packing requirements shall comply with the provisions of GJB33.
Notes
SJ20012-92
The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). If the user unit requires, the typical characteristic curve can be specified in the contract or order. Comparison between CS4 and factory model 3DJ7:
Additional instructions:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Zhang Zongguo, Wu Zhilong, Liu Meiying, etc. Project code: B91018.
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