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Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK101
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SJ 20054-1992
Standard Name:Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK101
This specification specifies the detailed requirements for 3DK101 type NPN silicon low power switching transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices". SJ 20054-1992 Semiconductor Discrete Devices 3DK101 Type NPN Silicon Low Power Switching Transistor Detailed Specification SJ20054-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3DK101 type NPN silicon low power switching transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices".
GB 4587-1984 Test methods for bipolar transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices
Some standard content:
Military standard for the electronics industry of the People's Republic of China FL5961 Semiconductor discrete device SJ20054—92 3DK101, 3DK102, 3DK103, 3DK104 and 3DK105 types NPN silicon low-power switching transistors Detailed specification Semiconductor discrete deviceDetail specificationfor silicon NPN low power switching transistor of type 3DK101.3DK102, 3DK103 3DK104 and 3DK105 Issued on November 19, 1992 China Electronics Industry Corporation Implementation on May 1, 1993 1 Scope Military Standard of Electronic Industry of the People's Republic of China Semiconductor Discrete Devices 3DK101 Type NPN Silicon Low Power Switching Transistor Detail Specification Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK101 1.1 Subject content SJ20054-92 This specification specifies the detailed requirements for 3DK101 type NPN silicon low power switching transistor (hereinafter referred to as the device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices". Published by China Electronics Industry Corporation on November 19, 1992 and implemented on May 1, 1993 1.2 Dimensions SJ20054-92 Dimensions should comply with A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1: Lead terminal polarity: 1. Emitter||t t||3. Channel electrode Figure 1 Dimensions A3-01B 1.3 Maximum ratings 3DK101B 3DK101C TA-25℃ Te=25℃ SJ20054—92 Note: 1) When TA>25℃, derate linearly at a rate of 1.1mW/℃. 2) When Tc>25℃, derate linearly at a rate of 4.6mW/℃C. 1.4 Main electrical characteristics (Ta=25℃) 3DK101B 3DK101C 3DK101B 3DK101C 3DK101B 3DK101C Reference documents Minimum value Maximum value lc=10mA Vee10V f=10QMHz Minimum value|| tt||Maximum value Ic20mA la-2mA Minimum value GB4587—84 GB7581-87 33—85 GJB128—86 Maximum value hyg(Veg=1V) le=3mA Minimum value Maximum value f=IMHz Vca -10V Minimum value Maximum value VeEta2 le=30mA Ig-3mA Minimum value Bipolar transistor test method Maximum value Dimensions of discrete semiconductor devices General specification for discrete semiconductor devices Test methods for discrete semiconductor devices lc=10mA Minimum value Maximum value Value le=10mA Ig=ImA Minimum value Maximum value le-20mA Minimum value Maximum value -65~+200 Ic=30mA Minimum value Maximum value le=10mA InI=1mA Minimum value Maximum value VhECEOI VHRXCEO2 Veket)i VcEcat2 Varcan VeRxCo Limit value Minimum value and maximum value Inspection or test A3 group High temperature operation: Collector-base cutoff current 3DK101B 3DK101C Low temperature operation: Forward current transfer ratio A4 group Characteristic frequency Open circuit output capacitance||tt| |Saturation turn-on time Saturation turn-off time 3DK101B 3DK101C A5, A6 and A7 groups Not applicable SJ20054-92 Continued Table 1 GB4587 TA=+150℃ Emitter-base open circuit Vce=25V Vcg—20V TA=-55℃ Ve--1V,le-10mAwwW.bzxz.Net Ve=10Vlc=10mA f=100 MHz Veg-10V,1g=0 f=-1MHz le=-10mA,I-mA le=10mA B=IImA LTPLD symbol Limit value Minimum maximum value Group B1 Solderability Inspection or test Durability of mark Group B2 Thermal shock (temperature cycle) a. Fine leak detection b. Rough leak detection Final test, Group B3||t t||Steady-state working life Final test: B4 group Open width internal visual inspection (Design verification) Bond strength B5 group Not applicable B6 group High temperature life (Not working) Final test: SJ20054-92 Table 2B group inspection GJB128 See Table 4, steps 1, 3 and 4 Vcs-10VPta200mW TA=25±3℃ No It is allowed to add heat sink or forced air cooling to the device, see Table 4, steps 2 and 5 Visual inspection standard is as per the design at the time of identification TA=200℃ see Table 4.Steps 2 and 5 One device per batch, 0 failure 20(C0) Inspection or test C1 group Dimensions C2 group Thermal shock (glass stress) Terminal strength a. Detailed leak detection b. Coarse leak detection Comprehensive temperature/humidity cycle test Appearance and mechanical inspection Final test : Group C3 Variable frequency vibration Constant acceleration Final test: Group C4 Salt gas (when applicable) Group C5 Not applicable Group C6 Steady-state working life Final test: SJ20054—92 Table 3 Group C test GJB128 See Figure 1 Test condition A Test condition E See Table 4, steps 1, 3 and 4 See Table 4, steps 1, 3 and 4| |tt||Tx=25±3Vea=10V It is not allowed to add heat sink or strong air cooling to the device See Table 4, steps 2 and 5 Input=10 Limit value Minimum value Maximum value Inspection or test Collector-base cut-off current 3DK101B 3DK101C Collector-base cut-off current 3DK101B 3DK101C Collector-emitter saturation voltage drop Forward current transfer ratio Forward Current Transfer Ratio SJ20054--92 Final Test for Group B and Group C GB4587 Emitter-Base Open Circuit Veam25V Vea-20V Emitter-Base Open Circuit Vcs=-25V VcB=20V Ie=20mA Ig=2mA Vee=1V Ie-10mA le=10mA Note: 1) For this test, devices exceeding the limit values of Group A shall not be accepted. Delivery preparation Packing requirements shall be in accordance with the provisions of GJB33, 6 Notes Thregl The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit value Minimum value Initial value Maximum value SJ20054—92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. 2 Test circuit The test circuit is shown in Figure A1. Voltage source Collector-emitter breakdown voltage test circuit A3 Steps The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied under the specified test current is greater than the minimum limit of VBR>CEO, the transistor is qualified. Additional remarks: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and State-owned Factory No. 746. The main drafters of this specification are Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01011. Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.