This specification specifies the detailed requirements for 3DK101 type NPN silicon low power switching transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices". SJ 20054-1992 Semiconductor Discrete Devices 3DK101 Type NPN Silicon Low Power Switching Transistor Detailed Specification SJ20054-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3DK101 type NPN silicon low power switching transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices".

GB 4587-1984 Test methods for bipolar transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices

Military standard for the electronics industry of the People's Republic of China FL5961
Semiconductor discrete device
SJ20054—92
3DK101, 3DK102, 3DK103,
3DK104 and 3DK105 types
NPN silicon low-power switching transistors
Detailed specification
Semiconductor discrete deviceDetail specificationfor silicon NPN low power switching transistor of type 3DK101.3DK102, 3DK103 3DK104 and 3DK105 Issued on November 19, 1992
China Electronics Industry Corporation
Implementation on May 1, 1993
1 Scope
Military Standard of Electronic Industry of the People's Republic of China Semiconductor Discrete Devices
3DK101 Type NPN Silicon Low Power Switching Transistor Detail Specification
Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK101 1.1 Subject content
SJ20054-92
This specification specifies the detailed requirements for 3DK101 type NPN silicon low power switching transistor (hereinafter referred to as the device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices".
Published by China Electronics Industry Corporation on November 19, 1992 and implemented on May 1, 1993
1.2 Dimensions
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Dimensions should comply with A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1:
Lead terminal polarity:
1. Emitter||t t||3. Channel electrode
Figure 1 Dimensions
A3-01B
1.3 Maximum ratings
3DK101B
3DK101C
TA-25℃
Te=25℃
SJ20054—92
Note: 1) When TA>25℃, derate linearly at a rate of 1.1mW/℃. 2) When Tc>25℃, derate linearly at a rate of 4.6mW/℃C. 1.4 Main electrical characteristics (Ta=25℃)
3DK101B
3DK101C
3DK101B
3DK101C
3DK101B
3DK101C
Reference documents
Minimum value
Maximum value
lc=10mA
Vee10V
f=10QMHz
Minimum value|| tt||Maximum value
Ic20mA
la-2mA
Minimum value
GB4587—84
GB7581-87
33—85
GJB128—86
Maximum value
hyg(Veg=1V)
le=3mA
Minimum value
Maximum value
f=IMHz
Vca -10V
Minimum value
Maximum value
VeEta2
le=30mA
Ig-3mA
Minimum value
Bipolar transistor test method
Maximum value
Dimensions of discrete semiconductor devices
General specification for discrete semiconductor devices
Test methods for discrete semiconductor devices
lc=10mA
Minimum value
Maximum value Value
le=10mA
Ig=ImA
Minimum value
Maximum value
le-20mA
Minimum value
Maximum value
-65~+200
Ic=30mA
Minimum value
Maximum value
le=10mA
InI=1mA
Minimum value
Maximum value
VhECEOI
VHRXCEO2
Veket)i
VcEcat2
Varcan
VeRxCo
Limit value
Minimum value and maximum value
Inspection or test
A3 group
High temperature operation:
Collector-base cutoff current
3DK101B
3DK101C
Low temperature operation:
Forward current transfer ratio
A4 group
Characteristic frequency
Open circuit output capacitance||tt| |Saturation turn-on time
Saturation turn-off time
3DK101B
3DK101C
A5, A6 and A7 groups
Not applicable
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Continued Table 1
GB4587
TA=+150℃
Emitter-base open circuit
Vce=25V
Vcg—20V
TA=-55℃
Ve--1V,le-10mAwwW.bzxz.Net
Ve=10Vlc=10mA
f=100 MHz
Veg-10V,1g=0
f=-1MHz
le=-10mA,I-mA
le=10mA
B=IImA
LTPLD symbol
Limit value
Minimum maximum value
Group B1
Solderability
Inspection or test
Durability of mark
Group B2
Thermal shock (temperature cycle)
a. Fine leak detection
b. Rough leak detection
Final test,
Group B3||t t||Steady-state working life
Final test:
B4 group
Open width internal visual inspection
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test:
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Table 2B group inspection
GJB128
See Table 4, steps 1, 3 and 4
Vcs-10VPta200mW
TA=25±3℃
No It is allowed to add heat sink or forced air cooling to the device, see Table 4, steps 2 and 5
Visual inspection standard is as per the design at the time of identification
TA=200℃
see Table 4.Steps 2 and 5
One device per batch, 0 failure
20(C0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Coarse leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test ：
Group C3
Variable frequency vibration
Constant acceleration
Final test:
Group C4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
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Table 3 Group C test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4| |tt||Tx=25±3Vea=10V
It is not allowed to add heat sink or strong air cooling to the device
See Table 4, steps 2 and 5
Input=10
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cut-off current
3DK101B
3DK101C
Collector-base cut-off current
3DK101B
3DK101C
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward Current Transfer Ratio
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Final Test for Group B and Group C
GB4587
Emitter-Base Open Circuit
Veam25V
Vea-20V
Emitter-Base Open Circuit
Vcs=-25V
VcB=20V
Ie=20mA
Ig=2mA
Vee=1V
Ie-10mA
le=10mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33,
6 Notes
Thregl
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit value
Minimum value
Initial value
Maximum value
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Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. 2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Collector-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied under the specified test current is greater than the minimum limit of VBR>CEO, the transistor is qualified. Additional remarks:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and State-owned Factory No. 746. The main drafters of this specification are Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01011.
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