This specification specifies the X-ray double crystal diffraction test method for the sub-damage layer of GaAs polished wafers. This specification is applicable to the qualitative measurement of the sub-damage layer of GaAs polished wafers that have been chemically, mechanically single-sided and double-sided polished. SJ 20714-1998 X-ray double crystal diffraction test method for the sub-damage layer of GaAs polished wafers SJ20714-1998 Standard download decompression password: www.bzxz.net

Military Standard of the Electronic Industry of the People's Republic of China FL 5971
SJ207141998
Test method for sub - surface damege of gallium arsenide polished wafer by X - ray double crystal diffractionPublished on 18 March 1998
Implemented on 15 May 1998
Approved by the Ministry of Electronics Industry of the People's Republic of ChinaMilitary Standard of the Electronic Industry of the People's Republic of ChinaTest method for sub - surface damege of galim arsenide polished wafer by X - ray double trystal diffraction1 Scope
1.1 Subject Content
SJ 20714--1998
This standard specifies the X-ray double crystal irradiation test method for the sub-damage layer of the GaAs wafer after chemical, mechanical single-sided and double-sided polishing. 1.2 Scope of application
This standard applies to the qualitative measurement of the sub-damage layer of GaAs wafers after chemical, mechanical single-sided and double-sided polishing. 2 Referenced documents
CJB1926~94 Specification for gallium arsenide single crystal materials. 3 Definitions
No provisions in this article.
4 General requirements
4.1 Measurement atmospheric conditions
a. Ambient temperature: 23±5℃
b. Relative humidity: ≤70%
c. Atmospheric pressure: 86~106kPa
4.2 Measurement environment requirements
The measurement laboratory should be free of vibration and electromagnetic interference is not allowed; and a certain clean condition should be guaranteed. No corrosive gas. Issued by the Ministry of Electronics Industry of the People's Republic of China on March 18, 1998, TKANrKAca-
Implementation on May 1, 1998
5 Detailed requirements
5.1 Summary of the method
SI 20714 ~ 1998
The half-peak width of the rocking curve of X-rays reflected by a complete crystal is: =21F1xP
Where: 8——half-peak width, radians;
N-number of unit cells per unit volume, cm~3;
a—X-ray wavelength, cm;
β Bragg angle, \;
P—polarization factor;
e, gong, C physical band number: electron charge, electron rest mass and speed of light: F —— crystal structure factor.
When the crystal has defects, the integrity of the crystal is reduced and the half-peak width increases. Therefore, the half-peak width is an important parameter to characterize the integrity of the crystal. The surface processing of the crystal (cutting, grinding, polishing, etc.) causes the surface to be damaged, that is, the integrity of the crystal in the surface sub-damage layer is damaged, which will increase the half-peak width of the crystal swing curve. Therefore, the half-peak width can be used to characterize the damage of the crystal surface due to processing in crystals with basically the same intrinsic defects. 5.2 Measuring instruments
X-ray double crystal irradiation instrument, computer data acquisition system. 5.3 Measurement conditionswwW.bzxz.Net
Use Cukα1 radiation, the single crystal standard crystal is a dislocation-free silicon single crystal, which is mechanically chemically polished to a mirror surface. Use small slit irradiation, double crystal (+n, n) arrangement, use the same → (khl) symmetric reflection, and count with a flash counter. 5.4 Sample preparation
The sample surface shall comply with the provisions of 3.2.9 and 3.2.10 of GJB 1926, and shall have a clean and dry surface after cleaning with anhydrous ethanol.
5.5 Point selection requirements
The center point of the sample shall be selected as the measurement point.
5.6 Test steps
5.6.1 Fix the sample on the sample holder, place the detector at the 29 position, adjust the sample 0 and plane angle @ angles, and find the maximum value of the diffraction peak.
5.6.2 Perform step scanning of the rocking curve at a scanning speed of less than one step per angle per second, collect data using a computer data acquisition system, and draw a rocking curve graph, measure the half-peak width from the graph, and give the half-peak width data. 5.7 Report
The measurement report shall include the following contents:
a. Sample source and serial number;
b. Instrument model;
℃. Test conditions: voltage, current, single crystal incident slit, single crystal type and orientation, single crystal reflection plane, sample reflection plane;
SJ 20714 - 1998
d. Test date, operator and test unit;
d. Test date, operator and test unit;
e. Theoretical value of the half-peak width of the complete crystal rocking curve;
f. Measured rocking curve graph and half-peak width (in [arc] seconds). 6 Explanations
6.1 Supplementary explanation of the method summary
In the double crystal diffractometer, after reflection from two crystals, the half-peak width is: B=429
In the measurement, the instrument widening effect is taken into account, and the measured half-peak width 9" is greater than 8. The closer the half-peak width of the wafer is to the theoretical value, the more severe the damage is. On the contrary, the wafer with a large half-peak width is severely damaged. Comparing the measured experimental data with the theoretical value can qualitatively characterize the sub-damage layer of the same batch of wafers after cutting, grinding and polishing. 6.2 Measurement accuracy of rocking curve
Taking into account the systematic error of the instrument, the measurement accuracy of the half-peak width of the rocking curve is 10%. Additional explanation:
This standard is under the jurisdiction of the China Electronics Technology Standardization Institute. This standard was drafted by the 46th Institute of the Ministry of Electronics Industry. The main drafters of this standard are: Zhang Shimin, Hao Jianmin, Duan Shuguang. Project code: B65004.
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