Some standard content:
National Standard of the People's Republic of China
Blank detail specification for bulk effect diodes
Blank detail specification for bulk effect diodes GB/T15137—94
This blank detail specification specifies the basic rules for the preparation of bulk effect diode detail specifications. All detail specifications prepared within this scope shall be consistent with this blank detail specification.
This blank detail specification is one of a series of blank detail specifications related to GB 4589.1-89 "General specification for discrete semiconductor devices and integrated circuits" and GB12560-90 "Sectional specification for discrete semiconductor devices". Required information:
The following required items shall be listed in the corresponding blanks as specified. Identification of the detailed specification:
Name of the national standardization agency authorized to issue the detailed specification. (2) IECQ detailed specification number.
(3) General specification number and year.
(4) Detailed specification number, date of issue and any additional information required by the national system. Identification of the device: || tt||(5) Brief description of the device type.
(6) Typical structure and application information.
If a device is designed to meet several applications, this should be noted here. The characteristics, limit values and inspection requirements of these applications should be met.
(7) Appearance drawing and/or reference to relevant appearance standards. (8) Quality assessment category.
(9) Reference data of the most important characteristics that can be compared between device models. Approved by the State Administration of Technology Supervision on June 25, 1994 and implemented on April 1, 1995
Basis for assessing device quality:
GB/T 15137—94
(IECQ Detailed specification number, version number and (or) date (2) (3)
Detailed specification number
GB4589.1 General specification for discrete semiconductor devices and integrated circuits
GB12560 Sectional specification for discrete semiconductor devicesDetailed specification:
[Model of relevant device]
Ordering information: See Chapter 7 of this specification
Mechanical description
Appearance standard:
Appearance drawing:
[You can go to Chapter 10 of this specification gives a detailed appearance drawing] Terminal identification:
[[The provisions for the electrodes shown in the figure include graphic symbols] Marking: letters and graphics or color codes
[If possible, the detailed specifications should be specified inside the marking on the device cover (see Article 2.5 of GB4589.1 and (or) Chapter 6 of this specification 3
Brief description
Body effect diode
Semiconductor material: Shenhua Comprehensive
Package cavity
Purpose:
Quality assessment category
[According to GB 4589.1, 2.6] Reference data
Information on manufacturers of qualified devices identified in accordance with this detailed specification. See the current qualified product list. (4)
[Throughout the blank specification, the contents given in square brackets are only for guidance in the preparation of detailed specifications and are not included in the detailed specifications. [Throughout the specification, × indicates the value to be filled in the detailed specification, and (×) indicates the value to be filled in the detailed specification when applicable.] Limit values (absolute maximum ratings)
GB/T 15137-94
Unless otherwise specified, these limiting values apply over the entire operating temperature range. [Only the clause number with the title is repeated. Any additional values are given in the appropriate place, but without the clause number. The curve is preferably given in Chapter 10 of this specification.
Clause number
Working environment temperature or case temperature
Storage overflow
Maximum DC voltage
or peak voltage (under specified pulse conditions) 5 Electrical characteristics (see Chapter 8 of this specification for inspection requirements) Compliance
Tamb/Teae
Minimum value
Maximum value
【Only the clause number with the title is repeated, and any additional characteristics are given in the appropriate place, but without the clause number. When devices of several specifications are included in the same detailed specification, the relevant values should be given in a continuous manner to avoid repetition of the same value. ］[The curves are preferably given in Chapter 10 of this specification] Document number
Characteristics and conditions Unless otherwise specified
Tsml or Tax=25C
Working current
Standard voltage\
Network current\
Pulse breakdown voltage (under specified pulse conditions) Low field resistance (under specified test current)
Continuous wave output power (under specified test cavity, working frequency band and working voltage)
or pulse output power
(under specified test cavity, working frequency band, working voltage and pulse conditions)
Working efficiency
(under specified test cavity, working voltage)Efficiency\
or transient thermal impedance (under specified pulse conditions)5.10
Case capacitance
5.11 Medium-bridge inductance1\
Note: 1) Typical value, not for inspection.
6 Marking
Zeenyt
Minimum value
Typical value
Maximum value
(Any special information other than that given in the previous (7) column (Chapter 1) and Clause 2.5 of GB 4589.1, shall be specified here. 77 Ordering information
CB/T 15137—94
[Unless otherwise specified, the following information is required at least to order a specific device:] - the exact model;
- IECQ detailed specification standard with version number and/or date, when relevant; - quality assessment category (as specified in Clause 2.6 of GB 4589.1. If required, the screening order shall be as specified in Clause 3.6 of GB 12560);
Any other details.
8 Test components and inspection requirements
[The test components are given in the following table. Test conditions and inspection requirements, where the values used and the exact test conditions shall be in accordance with the provisions of the given model and the relevant test and test standards.
When writing detailed specifications, it shall be determined which alternative test methods to choose. [When the same detailed specification includes several specifications of devices, the relevant conditions and (or) values shall be given in a continuous manner, in which the repetition of the same conditions and (or) values shall be avoided as much as possible. ) [Sampling requirements. According to the applicable quality assessment category, refer to or repeat the values of Article 3.7 of GB12560. For Group A, AQL or LTPD scheme shall be selected in the detailed specification. For Group C2d, LTPID=30 may be selected in the detailed specification.) In this chapter, unless otherwise specified, the referenced article number corresponds to the article number of GB4589.1, and the test method is quoted from GB6570% Microwave Diode Test Method".
Table 1 Group A-
All tests are non-destructive (Article 3.6.6). Inspection or test
Group A1
External visual inspection
Group A2b
Working current
Field resistance
Continuous wave output power
or pulse output power
Rated power
Referenced standards
Appendix B of this standard
GB 6570,B.1
GB 6570,B. S
Appendix B of this standard
G13 6570,B. 5
Unless otherwise specified
Tm or T=25 C
V- VueJ
I=【specified value]
Vop=［specified value］
f—［specified value］
Vope（specified value）
fo=Cspecified value
Voe=［specified value］
Inspection requirements
Minimum value Maximum value
GB/T 1513794
Table 2 Group B—
The test marked (D) is a destructive test (Article 3.6.6). Inspection or test
H1 group
B5 group
Rapid temperature change
Followed by sealing
B8 group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
B9 group
High temperature storage
Final test:
Low field resistance
Continuous wave output power
or pulse auxiliary output power
CRRL group
Reference standard
GB 49371,3.1
CB 4937,3.7
GB49382)
GR 6570,B. 1
GB 6570,B. 5
Appendix B to this specification
GB 4937.3. 2
GR 6570,B.1
GR 6570,B. 5
Appendix B to this specification
Provides the counting inspection results of B5 and B8
Note: 1) GB4937 Semiconductor discrete device mechanical and gas reading test method. 2) GB4938 Semiconductor discrete device acceptance and reliability. LS1, = lower limit of specification USE = upper limit of specification Unless otherwise specified Tmb or T = 25 °C [as specified] Working life, 168 h V-[VM] or V-[VPM] Tm/T [as specified] Group A2b Group A2b Group A2b Group A2b At least at maximum storage temperature Group A2h Group A2h Group A2b Group A2b According to Group A Inspection requirements Minimum value Maximum value See Chapter 1 of this specification 0.8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group
Terminal strength
Bending moment (D)
(for gold ceramic package coaxial
C6 Group
Mechanical shock or vibration
followed by,
constant acceleration
Final test:
Low field resistance
Continuous wave output power
or pulse output power
C8 Group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Reference standard
GB 6570.B. 1
GB 6570.B. 5
Appendix B to this specification
GB 6570,B. 3
CB 6570,B.4
GB 6570,3. 10
Appendix A to this specification
GR 4937.2.4 or
CB 4937.2.5
GB 6570.B.1
GB 6570,B.5
Appendix B to this specification
GB4938
GR 6570,R. 1
GE 6570,13. 5
Appendix B of this specification
LSL-lower limit of specification
SL.=upper limit of specification』
Unless otherwise specified
T or T.. - 25℃
=[specified high temperature
Grouped by A2h
Grouped by A2b
Connected to Group A2b
Same as Group B8 1000h
Grouped by A2b
Grouped by A2b
Grouped by A2h
According to Group A
Inspection requirements
Minimum value
Maximum value
See Chapter 1 of this specification
No damage or as specified
(0. 8LSL 1. 2USL
Inspection or test
Group C9
High temperature storage (D)
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Group 9D inspection (for identification)
10 Supplementary information (not for inspection)
GB/T 15137—94
Continued Table 3
Reference standard
GB 4937.3. 2
GB 6570,3.1
GR 6570,R. 5
Appendix B to this specification
Unless otherwise specified
Tamb or Ta* - 25 C
(at least 1000h at maximum storage temperature]Grouped by A2b
Grouped by A2h
Grouped by A26
Additional information shall be given whenever required by the specification and the use of the device, such as: curves related to the limited values and electrical characteristics; -.--Complete description of the measuring circuit or supplementary method! -Detailed appearance drawing
Inspection requirements
Minimum value Maximum value
0.BLSL1.2USL
O. BI.SI.
A1 Purpose
GB/T 15137-94
Appendix A
Separation torque test method
(Supplement)
This test is to test the bending resistance of metal-ceramic packaged coaxial devices. A2 Equipment
The bending moment test requires appropriate fixtures and specified weights for the device. A3 Test method
Fix one end of the device on the support and hang the specified weight at the other end in a direction perpendicular to the axis without impact. After the torque is applied, the support rotates three times at a low speed within 10g. A4 Final inspection
After the test, conduct a visual inspection with a magnification of 3 to 10 times. If there are any signs of breakage, looseness and relative movement between the electrode and the porcelain, the device should be judged as failed.
A5 Data to be given in the relevant specifications
The value of the bending moment applied to the device.
Appendix B
Working current 1oe and pulse auxiliary power P of the bulk effect diode, test method (supplement)
B1 Working current
. Purpose
Measure the working current of the bulk effect diode at the specified working voltage. b. Circuit diagram
See GB6570 Figure B6 for the circuit diagram. Connect an ammeter in series between the adjustable voltage source and the resonant cavity (with the diode under test) in Figure B6 to form a working current test circuit diagram.
C. Measurement steps
Install the tube under test in the resonant cavity, add the specified working voltage, adjust the resonant cavity and the adjustment plate, so that the output frequency is within the specified range and the power meter indicates the maximum. At this time, the reading on the ammeter is the working current 1oF. d. Specified conditions
Ambient temperature,
A voltage is applied.
B2 Pulse output power
GB/T 15137—94
Measure the pulse output power of the body effect diode under specified conditions. b.
Circuit diagram
Damage cell
(with knock test
light supervision)
Pulse exciter
Circuit description and requirements
Required device
Indicator
Type of coupler
Frequency meter
Directional coupling
The microwave performance of the tube under test needs to be reflected through the interaction with the resonant cavity. Therefore, different types of tubes under test should be equipped with corresponding resonant cavities. The tube under test is installed in the cavity, and the thermal resistance must be small enough. d.Measurement steps
The tube under test is installed in the resonant cavity. As specified above, the pulse excitation signal is used to adjust the resonant cavity so that the output frequency is within the specified range and the output power is the maximum. If the insertion loss from point A to point B is A (dB), the duty cycle read on the oscilloscope is ID, and the reading of the power meter is P, then the pulse output power P is calculated by formula (B1):
Specified conditions
Ambient temperature;
Working voltage.
Additional instructions:
This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China. P·104/10
This standard is under the jurisdiction of the National Technical Committee for Standardization of Semiconductor Devices. This standard was drafted by the 55th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Huang Yuying, Kui, Jin Guiyong, and Zhang Min.7
GB49382)
GR 6570,B. 1
GB 6570,B. 5
Appendix B to this specification
GB 4937.3. 2
GR 6570,B.1
GR 6570,B. 5
Appendix B to this specification
Provides the counting inspection results of B5 and B8
Note: 1) GB4937 Semiconductor discrete device mechanical and gas reading test method. 2) GB4938 Semiconductor discrete device acceptance and reliability. LS1, = lower limit of specification USE = upper limit of specification Unless otherwise specified Tmb or T = 25 °C [as specified] Working life, 168 h V-[VM] or V-[VPM] Tm/T [as specified] Group A2b Group A2b Group A2b Group A2b At least at maximum storage temperature Group A2h Group A2h Group A2b Group A2b According to Group A Inspection requirements Minimum value Maximum value See Chapter 1 of this specification 0.8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group
Terminal strength
Bending moment (D)
(for gold ceramic package coaxial
C6 Group
Mechanical shock or vibration
followed by,
constant acceleration
Final test:
Low field resistance
Continuous wave output power
or pulse output power
C8 Group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Reference standard
GB 6570.B. 1
GB 6570.B. 5
Appendix B to this specification
GB 6570,B. 3
CB 6570,B.4
GB 6570,3. 10
Appendix A to this specification
GR 4937.2.4 or
CB 4937.2.5
GB 6570.B.1
GB 6570,B.5
Appendix B to this specification
GB4938
GR 6570,R. 1
GE 6570,13. 5
Appendix B of this specification
LSL-lower limit of specification
SL.=upper limit of specification』
Unless otherwise specified
T or T.. - 25℃
=[specified high temperature
Grouped by A2h
Grouped by A2b
Connected to Group A2b
Same as Group B8 1000h
Grouped by A2b
Grouped by A2b
Grouped by A2h
According to Group A
Inspection requirements
Minimum value
Maximum value
See Chapter 1 of this specification
No damage or as specified
(0. 8LSL 1. 2USL
Inspection or test
Group C9
High temperature storage (D)
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Group 9D inspection (for identification)
10 Supplementary information (not for inspection)
GB/T 15137—94
Continued Table 3
Reference standard
GB 4937.3. 2
GB 6570,3.1
GR 6570,R. 5
Appendix B to this specification
Unless otherwise specified
Tamb or Ta* - 25 C
(at least 1000h at maximum storage temperature]Grouped by A2b
Grouped by A2h
Grouped by A26
Additional information shall be given whenever required by the specification and the use of the device, such as: curves related to the limited values and electrical characteristics; -.--Complete description of the measuring circuit or supplementary method! -Detailed appearance drawing
Inspection requirements
Minimum value Maximum value
0.BLSL1.2USL
O. BI.SI.
A1 Purpose
GB/T 15137-94
Appendix A
Separation torque test method
(Supplement)
This test is to test the bending resistance of metal-ceramic packaged coaxial devices. A2 Equipment
The bending moment test requires appropriate fixtures and specified weights for the device. A3 Test method
Fix one end of the device on the support and hang the specified weight at the other end in a direction perpendicular to the axis without impact. After the torque is applied, the support rotates three times at a low speed within 10g. A4 Final inspection
After the test, conduct a visual inspection with a magnification of 3 to 10 times. If there are any signs of breakage, looseness and relative movement between the electrode and the porcelain, the device should be judged as failed.
A5 Data to be given in the relevant specifications
The value of the bending moment applied to the device.
Appendix B
Working current 1oe and pulse auxiliary power P of the bulk effect diode, test method (supplement)
B1 Working current
. Purpose
Measure the working current of the bulk effect diode at the specified working voltage. b. Circuit diagram
See GB6570 Figure B6 for the circuit diagram. Connect an ammeter in series between the adjustable voltage source and the resonant cavity (with the diode under test) in Figure B6 to form a working current test circuit diagram.
C. Measurement steps
Install the tube under test in the resonant cavity, add the specified working voltage, adjust the resonant cavity and the adjustment plate, so that the output frequency is within the specified range and the power meter indicates the maximum. At this time, the reading on the ammeter is the working current 1oF. d. Specified conditions
Ambient temperature,
A voltage is applied.
B2 Pulse output power
GB/T 15137—94
Measure the pulse output power of the body effect diode under specified conditions. b.
Circuit diagram
Damage cell
(with knock test
light supervision)
Pulse exciter
Circuit description and requirements
Required device
Indicator
Type of coupler
Frequency meter
Directional coupling
The microwave performance of the tube under test needs to be reflected through the interaction with the resonant cavity. Therefore, different types of tubes under test should be equipped with corresponding resonant cavities. The tube under test is installed in the cavity, and the thermal resistance must be small enough. d.Measurement steps
The tube under test is installed in the resonant cavity. As specified above, the pulse excitation signal is used to adjust the resonant cavity so that the output frequency is within the specified range and the output power is the maximum. If the insertion loss from point A to point B is A (dB), the duty cycle read on the oscilloscope is ID, and the reading of the power meter is P, then the pulse output power P is calculated by formula (B1):
Specified conditions
Ambient temperature;
Working voltage.
Additional instructions:
This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China. P·104/10
This standard is under the jurisdiction of the National Technical Committee for Standardization of Semiconductor Devices. This standard was drafted by the 55th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Huang Yuying, Kui, Jin Guiyong, and Zhang Min.7
GB49382)
GR 6570,B. 1
GB 6570,B. 5
Appendix B to this specification
GB 4937.3. 2
GR 6570,B.1
GR 6570,B. 5
Appendix B to this specification
Provides the counting inspection results of B5 and B8
Note: 1) GB4937 Semiconductor discrete device mechanical and gas reading test method. 2) GB4938 Semiconductor discrete device acceptance and reliability. LS1, = lower limit of specification USE = upper limit of specification Unless otherwise specified Tmb or T = 25 °C [as specified] Working life, 168 h V-[VM] or V-[VPM] Tm/T [as specified] Group A2b Group A2b Group A2b Group A2b At least at maximum storage temperature Group A2h Group A2h Group A2b Group A2b According to Group A Inspection requirements Minimum value Maximum value See Chapter 1 of this specification 0.8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group
Terminal strength
Bending moment (D)
(for gold ceramic package coaxial
C6 Group
Mechanical shock or vibration
followed by,
constant acceleration
Final test:
Low field resistance
Continuous wave output power
or pulse output power
C8 Group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Reference standard
GB 6570.B. 1
GB 6570.B. 5
Appendix B to this specification
GB 6570,B. 3
CB 6570,B.4
GB 6570,3. 10
Appendix A to this specification
GR 4937.2.4 or
CB 4937.2.5
GB 6570.B.1
GB 6570,B.5
Appendix B to this specification
GB4938
GR 6570,R. 1
GE 6570,13. 5
Appendix B of this specification
LSL-lower limit of specification
SL.=upper limit of specification』
Unless otherwise specified
T or T.. - 25℃
=[specified high temperature
Grouped by A2h
Grouped by A2b
Connected to Group A2b
Same as Group B8 1000h
Grouped by A2b
Grouped by A2b
Grouped by A2h
According to Group A
Inspection requirements
Minimum value
Maximum value
See Chapter 1 of this specification
No damage or as specified
(0. 8LSL 1. 2USL
Inspection or test
Group C9
High temperature storage (D)
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Group 9D inspection (for identification)
10 Supplementary information (not for inspection)
GB/T 15137—94
Continued Table 3
Reference standard
GB 4937.3. 2
GB 6570,3.1
GR 6570,R. 5
Appendix B to this specification
Unless otherwise specified
Tamb or Ta* - 25 C
(at least 1000h at maximum storage temperature]Grouped by A2b
Grouped by A2h
Grouped by A26
Additional information shall be given whenever required by the specification and the use of the device, such as: curves related to the limited values and electrical characteristics; -.--Complete description of the measuring circuit or supplementary method! -Detailed appearance drawing
Inspection requirements
Minimum value Maximum value
0.BLSL1.2USL
O. BI.SI.
A1 Purpose
GB/T 15137-94
Appendix A
Separation torque test method
(Supplement)
This test is to test the bending resistance of metal-ceramic packaged coaxial devices. A2 Equipment
The bending moment test requires appropriate fixtures and specified weights for the device. A3 Test method
Fix one end of the device on the support and hang the specified weight at the other end in a direction perpendicular to the axis without impact. After the torque is applied, the support rotates three times at a low speed within 10g. A4 Final inspection
After the test, conduct a visual inspection with a magnification of 3 to 10 times. If there are any signs of breakage, looseness and relative movement between the electrode and the porcelain, the device should be judged as failed.
A5 Data to be given in the relevant specifications
The value of the bending moment applied to the device.
Appendix B
Working current 1oe and pulse auxiliary power P of the bulk effect diode, test method (supplement)
B1 Working current
. Purpose
Measure the working current of the bulk effect diode at the specified working voltage. b. Circuit diagram
See GB6570 Figure B6 for the circuit diagram. Connect an ammeter in series between the adjustable voltage source and the resonant cavity (with the diode under test) in Figure B6 to form a working current test circuit diagram.
C. Measurement steps
Install the tube under test in the resonant cavity, add the specified working voltage, adjust the resonant cavity and the adjustment plate, so that the output frequency is within the specified range and the power meter indicates the maximum. At this time, the reading on the ammeter is the working current 1oF. d. Specified conditions
Ambient temperature,
A voltage is applied.
B2 Pulse output power
GB/T 15137—94
Measure the pulse output power of the body effect diode under specified conditions. b.
Circuit diagram
Damage cell
(with knock test
light supervision)
Pulse exciter
Circuit description and requirements
Required device
Indicator
Type of coupler
Frequency meter
Directional coupling
The microwave performance of the tube under test needs to be reflected through the interaction with the resonant cavity. Therefore, different types of tubes under test should be equipped with corresponding resonant cavities. The tube under test is installed in the cavity, and the thermal resistance must be small enough. d.Measurement steps
The tube under test is installed in the resonant cavity. As specified above, the pulse excitation signal is used to adjust the resonant cavity so that the output frequency is within the specified range and the output power is the maximum. If the insertion loss from point A to point B is A (dB), the duty cycle read on the oscilloscope is ID, and the reading of the power meter is P, then the pulse output power P is calculated by formula (B1):
Specified conditions
Ambient temperature;
Working voltage.
Additional instructions:
This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China. P·104/10
This standard is under the jurisdiction of the National Technical Committee for Standardization of Semiconductor Devices. This standard was drafted by the 55th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Huang Yuying, Kui, Jin Guiyong, and Zhang Min.5
Appendix B of this specification
GB 4937.3. 2
GR 6570,B.1
GR 6570,B. 5
Appendix B of this specification
Provides the counting inspection results of B5 and B8
Note: 1) GB4937 Semiconductor discrete device mechanical and gas reading test method. 2) GB4938 Semiconductor discrete device acceptance and reliability. LS1, = lower limit of specification USE = upper limit of specification Unless otherwise specified Tmb or T = 25 °C [as specified] Working life, 168 h V-[VM] or V-[VPM] Tm/T [as specified] Group A2b Group A2b Group A2b Group A2b At least at maximum storage temperature Group A2h Group A2h Group A2b Group A2b According to Group A Inspection requirements Minimum value Maximum value See Chapter 1 of this specification 0.8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group
Terminal strength
Bending moment (D)
(for gold ceramic package coaxial
C6 Group
Mechanical shock or vibration
followed by,
constant acceleration
Final test:
Low field resistance
Continuous wave output power
or pulse output power
C8 Group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Reference standard
GB 6570.B. 1
GB 6570.B. 5
Appendix B to this specification
GB 6570,B. 3
CB 6570,B.4
GB 6570,3. 10
Appendix A to this specification
GR 4937.2.4 or
CB 4937.2.5
GB 6570.B.1
GB 6570,B.5
Appendix B to this specification
GB4938
GR 6570,R. 1
GE 6570,13. 5
Appendix B of this specification
LSL-lower limit of specification
SL.=upper limit of specification』
Unless otherwise specified
T or T.. - 25℃
=[specified high temperature
Grouped by A2h
Grouped by A2b
Connected to Group A2b
Same as Group B8 1000h
Grouped by A2b
Grouped by A2b
Grouped by A2h
According to Group Abzxz.net
Inspection requirements
Minimum value
Maximum value
See Chapter 1 of this specification
No damage or as specified
(0. 8LSL 1. 2USL
Inspection or test
Group C9
High temperature storage (D)
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Group 9D inspection (for identification)
10 Supplementary information (not for inspection)
GB/T 15137—94
Continued Table 3
Reference standard
GB 4937.3. 2
GB 6570,3.1
GR 6570,R. 5
Appendix B to this specification
Unless otherwise specified
Tamb or Ta* - 25 C
(at least 1000h at maximum storage temperature]Grouped by A2b
Grouped by A2h
Grouped by A26
Additional information shall be given whenever required by the specification and the use of the device, such as: curves related to the limited values and electrical characteristics; -.--Complete description of the measuring circuit or supplementary method! -Detailed appearance drawing
Inspection requirements
Minimum value Maximum value
0.BLSL1.2USL
O. BI.SI.
A1 Purpose
GB/T 15137-94
Appendix A
Separation torque test method
(Supplement)
This test is to test the bending resistance of metal-ceramic packaged coaxial devices. A2 Equipment
The bending moment test requires appropriate fixtures and specified weights for the device. A3 Test method
Fix one end of the device on the support and hang the specified weight at the other end in a direction perpendicular to the axis without impact. After the torque is applied, the support rotates three times at a low speed within 10g. A4 Final inspection
After the test, conduct a visual inspection with a magnification of 3 to 10 times. If there are any signs of breakage, looseness and relative movement between the electrode and the porcelain, the device should be judged as failed.
A5 Data to be given in the relevant specifications
The value of the bending moment applied to the device.
Appendix B
Working current 1oe and pulse auxiliary power P of the bulk effect diode, test method (supplement)
B1 Working current
. Purpose
Measure the working current of the bulk effect diode at the specified working voltage. b. Circuit diagram
See GB6570 Figure B6 for the circuit diagram. Connect an ammeter in series between the adjustable voltage source and the resonant cavity (with the diode under test) in Figure B6 to form a working current test circuit diagram.
C. Measurement steps
Install the tube under test in the resonant cavity, add the specified working voltage, adjust the resonant cavity and the adjustment plate, so that the output frequency is within the specified range and the power meter indicates the maximum. At this time, the reading on the ammeter is the working current 1oF. d. Specified conditions
Ambient temperature,
A voltage is applied.
B2 Pulse output power
GB/T 15137—94
Measure the pulse output power of the body effect diode under specified conditions. b.
Circuit diagram
Damage cell
(with knock test
light supervision)
Pulse exciter
Circuit description and requirements
Required device
Indicator
Type of coupler
Frequency meter
Directional coupling
The microwave performance of the tube under test needs to be reflected through the interaction with the resonant cavity. Therefore, different types of tubes under test should be equipped with corresponding resonant cavities. The tube under test is installed in the cavity, and the thermal resistance must be small enough. d.Measurement steps
The tube under test is installed in the resonant cavity. As specified above, the pulse excitation signal is used to adjust the resonant cavity so that the output frequency is within the specified range and the output power is the maximum. If the insertion loss from point A to point B is A (dB), the duty cycle read on the oscilloscope is ID, and the reading of the power meter is P, then the pulse output power P is calculated by formula (B1):
Specified conditions
Ambient temperature;
Working voltage.
Additional instructions:
This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China. P·104/10
This standard is under the jurisdiction of the National Technical Committee for Standardization of Semiconductor Devices. This standard was drafted by the 55th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Huang Yuying, Kui, Jin Guiyong, and Zhang Min.5
Appendix B of this specification
GB 4937.3. 2
GR 6570,B.1
GR 6570,B. 5
Appendix B of this specification
Provides the counting inspection results of B5 and B8
Note: 1) GB4937 Semiconductor discrete device mechanical and gas reading test method. 2) GB4938 Semiconductor discrete device acceptance and reliability. LS1, = lower limit of specification USE = upper limit of specification Unless otherwise specified Tmb or T = 25 °C [as specified] Working life, 168 h V-[VM] or V-[VPM] Tm/T [as specified] Group A2b Group A2b Group A2b Group A2b At least at maximum storage temperature Group A2h Group A2h Group A2b Group A2b According to Group A Inspection requirements Minimum value Maximum value See Chapter 1 of this specification 0.8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group
Terminal strength
Bending moment (D)
(for gold ceramic package coaxial
C6 Group
Mechanical shock or vibration
followed by,
constant acceleration
Final test:
Low field resistance
Continuous wave output power
or pulse output power
C8 Group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Reference standard
GB 6570.B. 1
GB 6570.B. 5
Appendix B to this specification
GB 6570,B. 3
CB 6570,B.4
GB 6570,3. 10
Appendix A to this specification
GR 4937.2.4 or
CB 4937.2.5
GB 6570.B.1
GB 6570,B.5
Appendix B to this specification
GB4938
GR 6570,R. 1
GE 6570,13. 5
Appendix B of this specification
LSL-lower limit of specification
SL.=upper limit of specification』
Unless otherwise specified
T or T.. - 25℃
=[specified high temperature
Grouped by A2h
Grouped by A2b
Connected to Group A2b
Same as Group B8 1000h
Grouped by A2b
Grouped by A2b
Grouped by A2h
According to Group A
Inspection requirements
Minimum value
Maximum value
See Chapter 1 of this specification
No damage or as specified
(0. 8LSL 1. 2USL
Inspection or test
Group C9
High temperature storage (D)
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Group 9D inspection (for identification)
10 Supplementary information (not for inspection)
GB/T 15137—94
Continued Table 3
Reference standard
GB 4937.3. 2
GB 6570,3.1
GR 6570,R. 5
Appendix B to this specification
Unless otherwise specified
Tamb or Ta* - 25 C
(at least 1000h at maximum storage temperature]Grouped by A2b
Grouped by A2h
Grouped by A26
Additional information shall be given whenever required by the specification and the use of the device, such as: curves related to the limited values and electrical characteristics; -.--Complete description of the measuring circuit or supplementary method! -Detailed appearance drawing
Inspection requirements
Minimum value Maximum value
0.BLSL1.2USL
O. BI.SI.
A1 Purpose
GB/T 15137-94
Appendix A
Separation torque test method
(Supplement)
This test is to test the bending resistance of metal-ceramic packaged coaxial devices. A2 Equipment
The bending moment test requires appropriate fixtures and specified weights for the device. A3 Test method
Fix one end of the device on the support and hang the specified weight at the other end in a direction perpendicular to the axis without impact. After the torque is applied, the support rotates three times at a low speed within 10g. A4 Final inspection
After the test, conduct a visual inspection with a magnification of 3 to 10 times. If there are any signs of breakage, looseness and relative movement between the electrode and the porcelain, the device should be judged as failed.
A5 Data to be given in the relevant specifications
The value of the bending moment applied to the device.
Appendix B
Working current 1oe and pulse auxiliary power P of the bulk effect diode, test method (supplement)
B1 Working current
. Purpose
Measure the working current of the bulk effect diode at the specified working voltage. b. Circuit diagram
See GB6570 Figure B6 for the circuit diagram. Connect an ammeter in series between the adjustable voltage source and the resonant cavity (with the diode under test) in Figure B6 to form a working current test circuit diagram.
C. Measurement steps
Install the tube under test in the resonant cavity, add the specified working voltage, adjust the resonant cavity and the adjustment plate, so that the output frequency is within the specified range and the power meter indicates the maximum. At this time, the reading on the ammeter is the working current 1oF. d. Specified conditions
Ambient temperature,
A voltage is applied.
B2 Pulse output power
GB/T 15137—94
Measure the pulse output power of the body effect diode under specified conditions. b.
Circuit diagram
Damage cell
(with knock test
light supervision)
Pulse exciter
Circuit description and requirements
Required device
Indicator
Type of coupler
Frequency meter
Directional coupling
The microwave performance of the tube under test needs to be reflected through the interaction with the resonant cavity. Therefore, different types of tubes under test should be equipped with corresponding resonant cavities. The tube under test is installed in the cavity, and the thermal resistance must be small enough. d.Measurement steps
The tube under test is installed in the resonant cavity. As specified above, the pulse excitation signal is used to adjust the resonant cavity so that the output frequency is within the specified range and the output power is the maximum. If the insertion loss from point A to point B is A (dB), the duty cycle read on the oscilloscope is ID, and the reading of the power meter is P, then the pulse output power P is calculated by formula (B1):
Specified conditions
Ambient temperature;
Working voltage.
Additional instructions:
This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China. P·104/10
This standard is under the jurisdiction of the National Technical Committee for Standardization of Semiconductor Devices. This standard was drafted by the 55th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Huang Yuying, Kui, Jin Guiyong, and Zhang Min.5
Appendix B of this specification
provides the counting inspection results of B5 and B8
Note: 1) GB4937 Semiconductor Discrete Device Mechanical and Gas Reading Test Method. 2) GB4938 Semiconductor Discrete Device Acceptance and Reliability. LS1, = lower limit of specification USE = upper limit of specification Unless otherwise specified Tmb or T = 25 °C [as specified] Working life, 168 h V-[VM] or V-[VPM] Tm/T [as specified] Group A2b Group A2b Group A2b Group A2b At least at maximum storage temperature Group A2h Group A2h Group A2b Group A2b According to Group A Inspection requirements Minimum value Maximum value See Chapter 1 of this specification 0.8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group
Terminal strength
Bending moment (D)
(for gold ceramic package coaxial
C6 Group
Mechanical shock or vibration
followed by,
constant acceleration
Final test:
Low field resistance
Continuous wave output power
or pulse output power
C8 Group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Reference standard
GB 6570.B. 1
GB 6570.B. 5
Appendix B to this specification
GB 6570,B. 3
CB 6570,B.4
GB 6570,3. 10
Appendix A to this specification
GR 4937.2.4 or
CB 4937.2.5
GB 6570.B.1
GB 6570,B.5
Appendix B to this specification
GB4938
GR 6570,R. 1
GE 6570,13. 5
Appendix B of this specification
LSL-lower limit of specification
SL.=upper limit of specification』
Unless otherwise specified
T or T.. - 25℃
=[specified high temperature
Grouped by A2h
Grouped by A2b
Connected to Group A2b
Same as Group B8 1000h
Grouped by A2b
Grouped by A2b
Grouped by A2h
According to Group A
Inspection requirements
Minimum value
Maximum value
See Chapter 1 of this specification
No damage or as specified
(0. 8LSL 1. 2USL
Inspection or test
Group C9
High temperature storage (D)
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Group 9D inspection (for identification)
10 Supplementary information (not for inspection)
GB/T 15137—94
Continued Table 3
Reference standard
GB 4937.3. 2
GB 6570,3.1
GR 6570,R. 5
Appendix B to this specification
Unless otherwise specified
Tamb or Ta* - 25 C
(at least 1000h at maximum storage temperature]Grouped by A2b
Grouped by A2h
Grouped by A26
Additional information shall be given whenever required by the specification and the use of the device, such as: curves related to the limited values and electrical characteristics; -.--Complete description of the measuring circuit or supplementary method! -Detailed appearance drawing
Inspection requirements
Minimum value Maximum value
0.BLSL1.2USL
O. BI.SI.
A1 Purpose
GB/T 15137-94
Appendix A
Separation torque test method
(Supplement)
This test is to test the bending resistance of metal-ceramic packaged coaxial devices. A2 Equipment
The bending moment test requires appropriate fixtures and specified weights for the device. A3 Test method
Fix one end of the device on the support and hang the specified weight at the other end in a direction perpendicular to the axis without impact. After the torque is applied, the support rotates three times at a low speed within 10g. A4 Final inspection
After the test, conduct a visual inspection with a magnification of 3 to 10 times. If there are any signs of breakage, looseness and relative movement between the electrode and the porcelain, the device should be judged as failed.
A5 Data to be given in the relevant specifications
The value of the bending moment applied to the device.
Appendix B
Working current 1oe and pulse auxiliary power P of the bulk effect diode, test method (supplement)
B1 Working current
. Purpose
Measure the working current of the bulk effect diode at the specified working voltage. b. Circuit diagram
See GB6570 Figure B6 for the circuit diagram. Connect an ammeter in series between the adjustable voltage source and the resonant cavity (with the diode under test) in Figure B6 to form a working current test circuit diagram.
C. Measurement steps
Install the tube under test in the resonant cavity, add the specified working voltage, adjust the resonant cavity and the adjustment plate, so that the output frequency is within the specified range and the power meter indicates the maximum. At this time, the reading on the ammeter is the working current 1oF. d. Specified conditions
Ambient temperature,
A voltage is applied.
B2 Pulse output power
GB/T 15137—94
Measure the pulse output power of the body effect diode under specified conditions. b.
Circuit diagram
Damage cell
(with knock test
light supervision)
Pulse exciter
Circuit description and requirements
Needed device
Indicator
Type of coupler
Frequency meter
Directional coupling
The microwave performance of the tube under test needs to be reflected through the interaction with the resonant cavity. Therefore, different types of tubes under test should be equipped with corresponding resonant cavities. The tube under test is installed in the cavity, and the thermal resistance must be small enough. d.Measurement steps
The tube under test is installed in the resonant cavity. As specified above, the pulse excitation signal is used to adjust the resonant cavity so that the output frequency is within the specified range and the output power is maximum. If the insertion loss from point A to point B is A (dB), the duty cycle read on the oscilloscope is ID, and the reading of the power meter is P, then the pulse output power P is calculated by formula (B1):
Specified conditions
Ambient temperature;
Working voltage.
Additional instructions:
This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China. P·104/10
This standard is under the jurisdiction of the National Technical Committee for Standardization of Semiconductor Devices. This standard was drafted by the 55th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Huang Yuying, Kui, Jin Guiyong, and Zhang Min.5
Appendix B of this specification
provides the counting inspection results of B5 and B8
Note: 1) GB4937 Semiconductor Discrete Device Mechanical and Gas Reading Test Method. 2) GB4938 Semiconductor Discrete Device Acceptance and Reliability. LS1, = lower limit of specification USE = upper limit of specification Unless otherwise specified Tmb or T = 25 °C [as specified] Working life, 168 h V-[VM] or V-[VPM] Tm/T [as specified] Group A2b Group A2b Group A2b Group A2b At least at maximum storage temperature Group A2h Group A2h Group A2b Group A2b According to Group A Inspection requirements Minimum value Maximum value See Chapter 1 of this specification 0.8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group
Terminal strength
Bending moment (D)
(for gold ceramic package coaxial
C6 Group
Mechanical shock or vibration
followed by,
constant acceleration
Final test:
Low field resistance
Continuous wave output power
or pulse output power
C8 Group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Reference standard
GB 6570.B. 1
GB 6570.B. 5
Appendix B to this specification
GB 6570,B. 3
CB 6570,B.4
GB 6570,3. 10
Appendix A to this specification
GR 4937.2.4 or
CB 4937.2.5
GB 6570.B.1
GB 6570,B.5
Appendix B to this specification
GB4938
GR 6570,R. 1
GE 6570,13. 5
Appendix B of this specification
LSL-lower limit of specification
SL.=upper limit of specification』
Unless otherwise specified
T or T.. - 25℃
=[specified high temperature
Grouped by A2h
Grouped by A2b
Connected to Group A2b
Same as Group B8 1000h
Grouped by A2b
Grouped by A2b
Grouped by A2h
According to Group A
Inspection requirements
Minimum value
Maximum value
See Chapter 1 of this specification
No damage or as specified
(0. 8LSL 1. 2USL
Inspection or test
Group C9
High temperature storage (D)
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Group 9D inspection (for identification)
10 Supplementary information (not for inspection)
GB/T 15137—94
Continued Table 3
Reference standard
GB 4937.3. 2
GB 6570,3.1
GR 6570,R. 5
Appendix B to this specification
Unless otherwise specified
Tamb or Ta* - 25 C
(at least 1000h at maximum storage temperature]Grouped by A2b
Grouped by A2h
Grouped by A26
Additional information shall be given whenever required by the specification and the use of the device, such as: curves related to the limited values and electrical characteristics; -.--Complete description of the measuring circuit or supplementary method! -Detailed appearance drawing
Inspection requirements
Minimum value Maximum value
0.BLSL1.2USL
O. BI.SI.
A1 Purpose
GB/T 15137-94
Appendix A
Separation torque test method
(Supplement)
This test is to test the bending resistance of metal-ceramic packaged coaxial devices. A2 Equipment
The bending moment test requires appropriate fixtures and specified weights for the device. A3 Test method
Fix one end of the device on the support and hang the specified weight at the other end in a direction perpendicular to the axis without impact. After the torque is applied, the support rotates three times at a low speed within 10g. A4 Final inspection
After the test, conduct a visual inspection with a magnification of 3 to 10 times. If there are any signs of breakage, looseness and relative movement between the electrode and the porcelain, the device should be judged as failed.
A5 Data to be given in the relevant specifications
The value of the bending moment applied to the device.
Appendix B
Working current 1oe and pulse auxiliary power P of the bulk effect diode, test method (supplement)
B1 Working current
. Purpose
Measure the working current of the bulk effect diode at the specified working voltage. b. Circuit diagram
See GB6570 Figure B6 for the circuit diagram. Connect an ammeter in series between the adjustable voltage source and the resonant cavity (with the diode under test) in Figure B6 to form a working current test circuit diagram.
C. Measurement steps
Install the tube under test in the resonant cavity, add the specified working voltage, adjust the resonant cavity and the adjustment plate, so that the output frequency is within the specified range and the power meter indicates the maximum. At this time, the reading on the ammeter is the working current 1oF. d. Specified conditions
Ambient temperature,
A voltage is applied.
B2 Pulse output power
GB/T 15137—94
Measure the pulse output power of the body effect diode under specified conditions. b.
Circuit diagram
Damage cell
(with knock test
light supervision)
Pulse exciter
Circuit description and requirements
Required device
Indicator
Type of coupler
Frequency meter
Directional coupling
The microwave performance of the tube under test needs to be reflected through the interaction with the resonant cavity. Therefore, different types of tubes under test should be equipped with corresponding resonant cavities. The tube under test is installed in the cavity, and the thermal resistance must be small enough. d.Measurement steps
The tube under test is installed in the resonant cavity. As specified above, the pulse excitation signal is used to adjust the resonant cavity so that the output frequency is within the specified range and the output power is the maximum. If the insertion loss from point A to point B is A (dB), the duty cycle read on the oscilloscope is ID, and the reading of the power meter is P, then the pulse output power P is calculated by formula (B1):
Specified conditions
Ambient temperature;
Working voltage.
Additional instructions:
This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China. P·104/10
This standard is under the jurisdiction of the National Technical Committee for Standardization of Semiconductor Devices. This standard was drafted by the 55th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Huang Yuying, Kui, Jin Guiyong, and Zhang Min.= lower limit of specification
USE = upper limit of specification
Unless otherwise specified
Tmb or T = 25 C
[as specified]
Working life, 168h
V-[VM] or V-[VPM]
Tm/T[as specified]
Grouped as A2b
Grouped as A2b
Grouped as Azb
At least at maximum storage temperature
Grouped as A2h
Grouped as A2h
Grouped as A2b
According to Group A
Inspection requirements
Minimum value
See Chapter 1 of this specification
0. 8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group
Terminal strength
Bending moment (D)
(for gold ceramic package coaxial
C6 Group
Mechanical shock or vibration
followed by,
constant acceleration
Final test:
Low field resistance
Continuous wave output power
or pulse output power
C8 Group
Electrical durability
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Reference standard
GB 6570.B. 1
GB 6570.B. 5
Appendix B to this specification
GB 6570,B. 3
CB 6570,B.4
GB 6570,3. 10
Appendix A to this specification
GR 4937.2.4 or
CB 4937.2.5
GB 6570.B.1
GB 6570,B.5
Appendix B to this specification
GB4938
GR 6570,R. 1
GE 6570,13. 5
Appendix B of this specification
LSL-lower limit of specification
SL.=upper limit of specification』
Unless otherwise specified
T or T.. - 25℃
=[specified high temperature
Grouped by A2h
Grouped by A2b
Connected to Group A2b
Same as Group B8 1000h
Grouped by A2b
Grouped by A2b
Grouped by A2h
According to Group A
Inspection requirements
Minimum value
Maximum value
See Chapter 1 of this specification
No damage or as specified
(0. 8LSL 1. 2USL
Inspection or test
Group C9
High temperature storage (D)
Final test:
Low field resistance
Continuous wave output power
or pulse output power
Group 9D inspection (for identification)
10 Supplementary information (not for inspection)
GB/T 15137—94
Continued Table 3
Reference standard
GB 4937.3. 2
GB 6570,3.1
GR 6570,R. 5
Appendix B to this specification
Unless otherwise specified
Tamb or Ta* - 25 C
(at least 1000h at maximum storage temperature]Grouped by A2b
Grouped by A2h
Grouped by A26
Additional information shall be given whenever required by the specification and the use of the device, such as: curves related to the limited values and electrical characteristics; -.--Complete description of the measuring circuit or supplementary method! -Detailed appearance drawing
Inspection requirements
Minimum value Maximum value
0.BLSL1.2USL
O. BI.SI.
A1 Purpose
GB/T 15137-94
Appendix A
Separation torque test method
(Supplement)
This test is to test the bending resistance of metal-ceramic packaged coaxial devices. A2 Equipment
The bending moment test requires appropriate fixtures and specified weights for the device. A3 Test method
Fix one end of the device on the support and hang the specified weight at the other end in a direction perpendicular to the axis without impact. After the torque is applied, the support rotates three times at a low speed within 10g. A4 Final inspection
After the test, conduct a visual inspection with a magnification of 3 to 10 times. If there are any signs of breakage, looseness and relative movement between the electrode and the porcelain, the device should be judged as failed.
A5 Data to be given in the relevant specifications
The value of the bending moment applied to the device.
Appendix B
Working current 1oe and pulse auxiliary power P of the bulk effect diode, test method (supplement)
B1 Working current
. Purpose
Measure the working current of the bulk effect diode at the specified working voltage. b. Circuit diagram
See GB6570 Figure B6 for the circuit diagram. Connect an ammeter in series between the adjustable voltage source and the resonant cavity (with the diode under test) in Figure B6 to form a working current test circuit diagram.
C. Measurement steps
Install the tube under test in the resonant cavity, add the specified working voltage, adjust the resonant cavity and the adjustment plate, so that the output frequency is within the specified range and the power meter indicates the maximum. At this time, the reading on the ammeter is the working current 1oF. d. Specified conditions
Ambient temperature,
A voltage is applied.
B2 Pulse output power
GB/T 15137—94
Measure the pulse output power of the body effect diode under specified conditions. b.
Circuit diagram
Damage cell
(with knock test
light supervision)
Pulse exciter
Circuit description and requirements
Required device
Indicator
Type of coupler
Frequency meter
Directional coupling
The microwave performance of the tube under test needs to be reflected through the interaction with the resonant cavity. Therefore, different types of tubes under test should be equipped with corresponding resonant cavities. The tube under test is installed in the cavity, and the thermal resistance must be small enough. d.Measurement steps
The tube under test is installed in the resonant cavity. As specified above, the pulse excitation signal is used to adjust the resonant cavity so that the output frequency is within the specified range and the output power is the maximum. If the insertion loss from point A to point B is A (dB), the duty cycle read on the oscilloscope is ID, and the reading of the power meter is P, then the pulse output power P is calculated by formula (B1):
Specified conditions
Ambient temperature;
Working voltage.
Additional instructions:
This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China. P·104/10
This standard is under the jurisdiction of the National Technical Committee for Standardization of Semiconductor Devices. This standard was drafted by the 55th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Huang Yuying, Kui, Jin Guiyong, and Zhang Min.= lower limit of specification
USE = upper limit of specification
Unless otherwise specified
Tmb or T = 25 C
[as specified]
Working life, 168h
V-[VM] or V-[VPM]
Tm/T[as specified]
Grouped as A2b
Grouped as A2b
Grouped as Azb
At least at maximum storage temperature
Grouped as A2h
Grouped as A2h
Grouped as A2b
According to Group A
Inspection requirements
Minimum value
See Chapter 1 of this specification
0. 8LSL1. 2L'SL
0.8LS11.2USL
GB/T15137-94
Table 3 Group C - Cycle
Tests marked with (I)) are destructive tests (Clause 3.6.6) inspection or test
Group C1
Group C26
Low field resistance
Continuous wave output power
or pulse output power (when applicable)
C2e Group
Pulse breakdown voltage
C2d Group
or transient thermal impedance
C3 Group||t
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