SJ 20640-1997 Specification for Indium Antimonide Single Crystal for Infrared Detectors
Some standard content:
Military Standard of the Electronic Industry of the People's Republic of China FL5971
SJ20640-97
Specification for indium antimonide single crystal slices for use in infrared detectorPublished on 17 June 1997
Implemented on 10 October 1997
Approved by the Ministry of Electronics Industry of the People's Republic of China Military Standard of the Electronic Industry of the People's Republic of China Specification for indium antimonide single crystal slices for use in infrared detector
Specification for fndium antimonide single crystal slices for use in infrared detector1 Scope
SJ20640-97
1.1 Subject Content
This specification specifies the requirements, quality assurance regulations, delivery preparation and related rules for the antimonide single crystal wafers used in military photovoltaic infrared detectors.
1.2 Scope of Application
This specification applies to tellurium-doped (211) crystal bottom-grown single crystal wafers used in military optical infrared detectors. 1.3 Product Model
The product model is IS4 according to GB11296-89 "Infrared Detection Material Model Naming Method". 2 Referenced Documents
GB 3505-83
GB 11296-89
GR 11297.6-89
GB 11297.7--89
GJB179-86
GJR 129--91
ZRN30003—88
3 Requirements
3.1 Qualification
Surface roughness terms, surface and its parameters Infrared detection Material model naming method
Corrosion display and measurement method of dislocation pits of antimonide steel single crystal Test method for resistivity and tumble coefficient of indium antimonide single crystal Counting sample inspection procedure and table
Test method and procedure for microcircuit production line certification Optical parts packaging
Products submitted according to this specification should be qualified or approved by the finalization. 3.2 Characteristics
3.2.1 Minor axis size
Minor axis: ≥25mm
3.2.2 Crystal and orientation
a, product surface is (111). Orientation accuracy ±1°h. Orientation deviation <111)≤±1°.
3.2.3 Dislocation Etch Pit Density
The Ministry of Electronics Industry of the People's Republic of China issued on June 17, 1997 and implemented on October 1, 1997
TYKAOKAca-
EPD<100 pieces/cm2.
3.2.4 A and B Atomic Planes
a. Crystal plane (111) A atomic plane is an indium plane;
b. Crystal plane (111) B atomic plane is an antimony plane.
3.2.5 Conductive Type
The wafer is N-type at 77K.
3.2.6 Carrier concentration (n)
SJ20640-97
At 77K, n = 3 ×1014 ~2 ×1015cm~13.2.7 Focal mobility ()
At 77K, ±≥1.0×10°cm*/v*s
3.2.8 Surface roughness (Ra)
a.(111)A surface: R≤0.1μm)
b.(111)B surface; Ra≤5μm.
3.2.9 Polishing sheet thickness and surface quality
Send, polishing sheet thickness 510±25mm
b.Compared with the bright spot reference sample picture, it meets the requirements of the third grade or above. 4 Quality Assurance Provisions
4.1 Inspection Responsibility
Unless otherwise specified in the contract or order, the contractor shall be responsible for completing all inspections specified in this specification. If necessary, the ordering party or the superior appraisal agency has the right to inspect any of the inspection items described in this specification. 4.1.1 Conformity Responsibility
All products must meet all requirements of Chapter 3 and Chapter 5 of this specification. The inspections specified in this specification shall become an integral part of the contractor's entire inspection system or quality outline. If the contract includes inspection requirements not specified in this standard. The contractor shall also ensure that the products submitted for acceptance meet the requirements of the contract. Quality consistency inspection It is not allowed to submit products that are known to be defective, nor can the ordering party be required to accept defective products. 4.2 Inspection Classification
The inspections specified in this specification are divided into:
Appraisal inspection;
b. Quality consistency inspection.
4.3 Inspection conditions
Unless otherwise specified, various inspections shall be carried out under the following environmental conditions: Ambient temperature: 15~35°C;
Relative humidity: 45%~75%;
Atmospheric pressure: 86~106kPac
4,4 Qualification inspection
Qualification inspection is carried out before the product is put into production. When there are major changes in raw materials or manufacturing processes that may affect the results of the qualification inspection, qualification inspection shall also be carried out.
4.4.1 Inspection location
Qualification inspection shall be carried out in a laboratory approved by the relevant main departments. 2—
4.4.2 Inspection samples
SJ 20640—97
Samples shall be products manufactured by equipment and processes commonly used in production. Samples for qualification inspection shall be randomly selected from the total number of samples submitted for qualification inspection.
4.4.3 Inspection
The items, inspection sequence, number of samples tested and number of unqualified products for identification inspection shall be as specified in Table 1. Table 1 Identification and inspection
Inspection items
Small axis size
Crystal plane and orientation
Conductivity type
Carrier concentration
Truncation mobility
Dislocation corrosion pit density
A and B atomic planes
Surface roughness
Polishing sheet thickness and surface quality
4.4.4 Determination of failure
Required clause number
Inspection method clause number
Number of tested samples
Number of unqualified products allowed
If the tested samples pass the various inspections listed in Table 1, the identification and inspection shall be qualified: if one or more of the inspections exceed the number of unqualified products allowed as specified in Table 1, the qualification of identification and inspection shall not be granted. 4.4.5 Maintenance of Qualification
Qualification is maintained through quality consistency inspection. The contractor shall submit a copy of the quality consistency inspection record to the superior appraisal agency once a year as needed. 4.5 Quality consistency inspection
4.5.1 Composition of inspection batch
The inspection batch shall consist of single crystals grown in the [211] direction and oriented in the (111) crystal plane, with a crystal plane deviation equal to or less than 3:1, produced by the same equipment and the same process, and cut in accordance with the requirements of Article 3.2.1. 4.5.2 Group A inspection
4.5.2.1 Sampling plan
The Group A inspection of quality consistency inspection is in accordance with CJB179, general inspection level IⅡ, acceptable quality level 2.5, and a normal sampling plan. Serial number 3.4 is sampled for 1/3 of the sample volume for inspection, and the remaining serial numbers 1, 2, 5, 6, 7.8 are sampled for 2/3 of the sample volume for inspection.
4.5.2.2 Inspection items
Inspection items for Group A shall be carried out in accordance with the provisions of Table 2.
HTTKAONKAca-
Inspection Items
Thickness of sheet
Surface and orientation
Dislocation corrosion pit density
A and 13 source-surface
Conductivity type
Carrier concentrationwww.bzxz.net
Hall mobility
Surface roughness
4.5.2.3 Unqualified
SE20640---97
Installation We will inspect according to
required chapter
Inspection method chapter number
If an inspection batch is rejected, the contractor can remove the unqualified products and re-batch them for inspection. The number of samples should be twice that of normal inspection, and it should be clearly marked as "re-inspection batch". 4.5.3 Group R inspection
Group B inspection is 100% inspection. Group B inspection is carried out according to Table 3 after passing the A inspection. Table 3 Group B inspection items
Inspection items
Table quality
4.6 Packaging inspection
Use visual inspection method to carry out Article 5.1 and Article 5.2.3 Packaging and packaging inspection 4.7 Inspection method
4.7.1 Overall dimensions
a.Purity measurement
Test method Article number
Measure the four symmetrical points and natural center point of the wafer with a measurement device with a resolution of 1um, and the average value of the five points shall meet the requirements of Article 3.2.9;
b. Short axis measurement
Use a caliper with a resolution of 0.02mm to directly measure the short auxiliary ruler of the wafer, which shall meet the requirements of Article 3.2.1. 4.7.2 Crystalline orientation deviation
4.7.2.1 Principle
Comply with the method 1520 in GTR1209. 4.7.2.2 Equipment and requirements
X-ray diffractometer requirements:
a. Diffraction angle of (111) crystal plane: θ=11°54; b, working current: 2.0mA.
c. Sensitivity ±2\.
4.7.2.3 Test result evaluation
SF2064097
The orientation deviation of the measured crystal plane, i.e. the difference between the calculated 6-angle and the tripod Bragg angle, shall meet the requirements of 3.2.2. 4.7.3 Dislocation corrosion pit density
The measurement shall be carried out in accordance with the measurement method of GB 11297.6. 4.7.4 A and B atomic planes
4.7.4.1 Principle Overview
Indium antimonide single crystal has a zinc blende structure. On the (111) crystal plane, there are two layers of antimony ions that form an electric dipole layer. The indium atoms in the [111] direction point to the direction of the antimony atoms. Since the ratio of the number of bonds between indium atoms and atoms is 1:3, the bond energy between indium and antimony atoms is large and the bond is strong. Therefore, during chemical etching, the atoms on the (111) crystal plane always have positive charges, while the antimony atoms on the (111) crystal plane always have negative charges. The dislocation etching pits of the (111) crystal plane are used to determine the A and B atomic planes. Generally, the dislocations on the (111) plane that appear as white equilateral triangles are B atomic planes, and those that appear as equilateral triangular tetrahedrons are A atomic planes. This method uses CP.4 etchant to determine the A atomic plane.
4.7.4.2 Result determination
According to 4,7.4.1 Based on the basis given in the article, determine the (111) B atomic plane and the (111) A atomic plane. 4.7.5 Conductive type
4.7.5.1 Test method
Perform according to GB 11297.7.
4.7.5.2 Sample preparation and processing
Weld four symmetrical electrodes on the edge of the crystal surface, with a phase difference of 90 between each electrode, and ensure ohmic contact at the solder joint. 4.7.5.3 Result determination
Use the Van der Pauw method to measure the Hall coefficient of the chip. The one with a negative value of the sum of the potential values is the type. 4.7.6 Carrier concentration
Perform according to GB 11297.7.
4.7.7 Hall mobility
Perform according to GJB 1297.7
4.7.8 Surface roughness
According to the requirements of Article 2.9 of GB3505, use a step meter with a resolution of 0.02m to measure at any two points in the central area of the polishing sheet. The sampling length for surface A is 0.08mm, and the sampling length for surface B is 2.00mm. 4.7.9 Surface quality of polished sheets
4.7.9.1 Principle overview
The requirements for bright spots and scratches on the surface of the polishing sheet are more important. This method is to observe whether there are obvious scratches and large dense bright spots under a 100x microscope, and select by comparing with the reference picture. 4.7.9.2 Equipment and requirements
a. Microscope (x100):
b, dark field photography There are 5 kinds of reference sample bright spot pictures taken. s
HTTKAONTKAca-
SJ2064097
Figure 11-level reference sample bright spot picture
Figure 22-level test sample bright spot picture
SI20640-97
Figure 33-level reference sample bright spot picture
Figure 44-level test companion product bright spot picture
KAOKAca-
S120640-97
Figure 55-level reference sample bright spot picture
4.7.9.3 Preparation and treatment of test samples
After the single wafer of the inspection grid in 4.7.1 to 4.7.8 is ground and polished, it shall be immediately cleaned with deionized water and dried for use. 4.7.9.4 Test conditions
Observe the surface quality of the polished wafer under 100 times dark field with an upright metallographic microscope, and measure five points within 3mm of the outer edge, namely the center point and four cross-symmetrical points.
4.7.9.5 Result evaluation
Compare the surface quality of the wafer with the reference sample bright spot diagram, and the surface quality of the wafer is qualified if more than three points do not exceed the level 3 reference sample diagram requirements. 5 Delivery preparation
5.1 Packaging and boxing
5.1.1 Packaging
Put the polished wafer into the melted medical vaseline and put it in a special plastic packaging box. The wafer number should be put in the packaging box, and the inner packaging mark should be affixed to the outside of the packaging box. 5.1.2 Boxing
Put a certain amount of the special plastic box into the outer packaging box and fill it with fillers. The outer packaging box should be equipped with a product certificate and test report.
5.2 Transportation and Storage
5.2.1 Transportation
The product can be transported by any means of transportation, but anti-impact, anti-vibration and anti-extrusion measures should be adopted to avoid damage caused by falling and collision.
5.2.2 Storage
SJ20640-97
The product should be stored in a clean, dry and non-corrosive environment. 5.2.3 Marking
5.2.3.1 Inner Packaging
Indicate the following on the special packaging basin of InSb single crystal: a. Product name and model:
b. Military mark \J\;
c. Year and month of manufacture;
d. Product number and production batch number;
e. Quantity;
f. Name of the contractor.
5.2.3.2 Outer Packaging
The outer packaging box of antimonide steel single crystals shall be marked in accordance with the requirements of Chapter 5 of ZBN30003. Notes
6.1 Intended Use
The indium antimonide single crystals specified in this specification are intended for use in military photovoltaic infrared detectors. 6.2 Contents of Ordering Documents
The following contents shall be stated in the contract or order: a. Name and number of this specification:
b. Model;
Center. Dimensions and crystal plane;
d. Quantity;
e. Others.
Additional Notes:
This specification is under the jurisdiction of the China Electronics Technology Standardization Institute. This specification was drafted by the China Electronics Technology Standardization Institute. The main drafters of this specification are Li Zhaorui and Liu Yun. Project code: B55002.
TTKAONKACa-1 Test method
Perform according to GB 11297.7.
4.7.5.2 Sample preparation and processing
Weld four symmetrical electrodes on the edge of the crystal surface, with a phase difference of 90 between each electrode, and ensure ohmic contact of the solder joint. 4.7.5.3 Result determination
Use the Van der Pauw method to measure the Hall coefficient of the wafer, and the one with a negative value of the sum potential is the type. 4.7.6 Carrier concentration
Perform according to GB 11297.7.
4.7.7 Ear mobility
Perform according to GJB 1297.7.
4.7.8 Surface roughness
According to the requirements of Article 2.9 of GB3505, use a step meter with a resolution of 0.02m to measure at any two points in the central area of the polished sheet. The sampling length for surface A is 0.08mm, and the sampling length for surface B is 2.00mm. 4.7.9 Surface quality of polished sheet
4.7.9.1 Principle overview
The requirements for bright spots and scratches on the surface of the polished sheet are more important. This method is to observe whether there are obvious scratches and large dense bright spots under a 100x microscope, and select them by comparing with the reference picture. 4.7.9.2 Equipment and requirements
a. Microscope (x100):
b, 5 types of reference sample bright spot pictures taken under dark field. s
HTTKAONTKAca-
SJ2064097
Figure 11 Reference sample filling point diagram
Figure 22 Test sample bright spot diagram
SI20640-97
Figure 33 Reference sample bright spot diagram
Figure 44 Test companion product filling point diagram
KAOKAca-
S120640-97
Figure 55 Reference sample bright spot diagram
4.7.9.3 Preparation and processing of test samples
After the single wafer of the inspection grid in 4.7.1 to 4.7.8 is ground and polished, it shall be immediately cleaned with deionized water and dried for use. 4.7.9.4 Test conditions
Observe the surface quality of the polished wafer under 100 times dark field with an upright metallographic microscope, and measure five points within 3mm of the outer edge, namely the center point and four cross-symmetrical points.
4.7.9.5 Result evaluation
Compare the surface quality of the wafer with the reference sample bright spot diagram, and the surface quality of the wafer is qualified if more than three points do not exceed the level 3 reference sample diagram requirements. 5 Delivery preparation
5.1 Packaging and boxing
5.1.1 Packaging
Put the polished wafer into the melted medical vaseline and put it in a special plastic packaging box. The wafer number should be put in the packaging box, and the inner packaging mark should be affixed to the outside of the packaging box. 5.1.2 Boxing
Put a certain amount of the special plastic box into the outer packaging box and fill it with fillers. The outer packaging box should be equipped with a product certificate and test report.
5.2 Transportation and Storage
5.2.1 Transportation
The product can be transported by any means of transportation, but anti-impact, anti-vibration and anti-extrusion measures should be adopted to avoid damage caused by falling and collision.
5.2.2 Storage
SJ20640-97
The product should be stored in a clean, dry and non-corrosive environment. 5.2.3 Marking
5.2.3.1 Inner Packaging
Indicate the following on the special packaging basin of InSb single crystal: a. Product name and model:
b. Military mark \J\;
c. Year and month of manufacture;
d. Product number and production batch number;
e. Quantity;
f. Name of the contractor.
5.2.3.2 Outer Packaging
The outer packaging box of antimonide steel single crystals shall be marked in accordance with the requirements of Chapter 5 of ZBN30003. Notes
6.1 Intended Use
The indium antimonide single crystals specified in this specification are intended for use in military photovoltaic infrared detectors. 6.2 Contents of Ordering Documents
The following contents shall be stated in the contract or order: a. Name and number of this specification:
b. Model;
Center. Dimensions and crystal plane;
d. Quantity;
e. Others.
Additional Notes:
This specification is under the jurisdiction of the China Electronics Technology Standardization Institute. This specification was drafted by the China Electronics Technology Standardization Institute. The main drafters of this specification are Li Zhaorui and Liu Yun. Project code: B55002.
TTKAONKACa-1 Test method
Perform according to GB 11297.7.
4.7.5.2 Sample preparation and processing
Weld four symmetrical electrodes on the edge of the crystal surface, with a phase difference of 90 between each electrode, and ensure ohmic contact of the solder joint. 4.7.5.3 Result determination
Use the Van der Pauw method to measure the Hall coefficient of the wafer, and the one with a negative value of the sum potential is the type. 4.7.6 Carrier concentration
Perform according to GB 11297.7.
4.7.7 Ear mobility
Perform according to GJB 1297.7.
4.7.8 Surface roughness
According to the requirements of Article 2.9 of GB3505, use a step meter with a resolution of 0.02m to measure at any two points in the central area of the polished sheet. The sampling length for surface A is 0.08mm, and the sampling length for surface B is 2.00mm. 4.7.9 Surface quality of polished sheet
4.7.9.1 Principle overview
The requirements for bright spots and scratches on the surface of the polished sheet are more important. This method is to observe whether there are obvious scratches and large dense bright spots under a 100x microscope, and select them by comparing with the reference picture. 4.7.9.2 Equipment and requirements
a. Microscope (x100):
b, 5 types of reference sample bright spot pictures taken under dark field. s
HTTKAONTKAca-
SJ2064097
Figure 11 Reference sample filling point diagram
Figure 22 Test sample bright spot diagram
SI20640-97
Figure 33 Reference sample bright spot diagram
Figure 44 Test companion product filling point diagram
KAOKAca-
S120640-97
Figure 55 Reference sample bright spot diagram
4.7.9.3 Preparation and processing of test samples
After the single wafer of the inspection grid in 4.7.1 to 4.7.8 is ground and polished, it shall be immediately cleaned with deionized water and dried for use. 4.7.9.4 Test conditions
Observe the surface quality of the polished wafer under 100 times dark field with an upright metallographic microscope, and measure five points within 3mm of the outer edge, namely the center point and four cross-symmetrical points.
4.7.9.5 Result evaluation
Compare the surface quality of the wafer with the reference sample bright spot diagram, and the surface quality of the wafer is qualified if more than three points do not exceed the level 3 reference sample diagram requirements. 5 Delivery preparation
5.1 Packaging and boxing
5.1.1 Packaging
Put the polished wafer into the melted medical vaseline and put it in a special plastic packaging box. The wafer number should be put in the packaging box, and the inner packaging mark should be affixed to the outside of the packaging box. 5.1.2 Boxing
Put a certain amount of the special plastic box into the outer packaging box and fill it with fillers. The outer packaging box should be equipped with a product certificate and test report.
5.2 Transportation and Storage
5.2.1 Transportation
The product can be transported by any means of transportation, but anti-impact, anti-vibration and anti-extrusion measures should be adopted to avoid damage caused by falling and collision.
5.2.2 Storage
SJ20640-97
The product should be stored in a clean, dry and non-corrosive environment. 5.2.3 Marking
5.2.3.1 Inner Packaging
Indicate the following on the special packaging basin of InSb single crystal: a. Product name and model:
b. Military mark \J\;
c. Year and month of manufacture;
d. Product number and production batch number;
e. Quantity;
f. Name of the contractor.
5.2.3.2 Outer Packaging
The outer packaging box of antimonide steel single crystals shall be marked in accordance with the requirements of Chapter 5 of ZBN30003. Notes
6.1 Intended Use
The indium antimonide single crystals specified in this specification are intended for use in military photovoltaic infrared detectors. 6.2 Contents of Ordering Documents
The following contents shall be stated in the contract or order: a. Name and number of this specification:
b. Model;
Center. Dimensions and crystal plane;
d. Quantity;
e. Others.
Additional Notes:
This specification is under the jurisdiction of the China Electronics Technology Standardization Institute. This specification was drafted by the China Electronics Technology Standardization Institute. The main drafters of this specification are Li Zhaorui and Liu Yun. Project code: B55002.
TTKAONKACa-Others.
Additional Notes:
This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute. The main drafters of this specification are Li Zhaorui and Liu Yun. Project code: B55002.
TTKAONKACa-Others.
Additional Notes:
This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute. The main drafters of this specification are Li Zhaorui and Liu Yun. Project code: B55002.
TTKAONKACa-
Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.