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Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction

Basic Information

Standard ID: SJ/T 10627-1995

Standard Name:Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction

Chinese Name: 通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法

Standard category:Electronic Industry Standard (SJ)

state:in force

Date of Release1995-04-22

Date of Implementation:1995-10-01

Date of Expiration:2010-01-20

standard classification number

Standard Classification Number:General>>Standardization Management and General Provisions>>A01 Technical Management

associated standards

Publication information

publishing house:Standardization Research of the Ministry of Electronics Industry

Publication date:1995-09-01

other information

drafter:He Xiukun, Ru Qiongna, Li Guangping, Duan Shuguang

Drafting unit:The 46th Research Institute of the Ministry of Electronics Industry

Focal point unit:Standardization Institute of the Ministry of Electronics Industry

Publishing department:Ministry of Electronics Industry of the People's Republic of China

Introduction to standards:

This standard specifies a method for characterizing oxygen precipitation characteristics by measuring the reduction in interstitial oxygen content in silicon wafers before and after thermal annealing. This standard applies to N-type or P-type CZ silicon wafers with a room temperature resistivity greater than 0.1Ω .CM, whose thermal cycles can be single temperature or dual temperature. SJ/T 10627-1995 Method for Characterizing Oxygen Precipitation Characteristics of Silicon Wafers by Measuring the Reduction in Interstitial Oxygen Content SJ/T10627-1995 Standard download decompression password: www.bzxz.net
This standard specifies a method for characterizing oxygen precipitation characteristics by measuring the reduction in interstitial oxygen content in silicon wafers before and after thermal annealing. This standard applies to N-type or P-type CZ silicon wafers with a room temperature resistivity greater than 0.1Ω .CM, whose thermal cycles can be single temperature or dual temperature.


Some standard content:

Electronic Industry Standard of the People's Republic of China
SJ/T10627--1995
Test methods for oxygen precipitation characterization of silicon wafers by measuring the reduction of interstitial oxygen content
Published on April 22, 1995
Implemented on October 1, 1995
Published by the Ministry of Electronics Industry of the People's Republic of China Standard of the People's Republic of China
Test methods for oxygen precipitation characterization of silicon wafers by measuring the reduction of interstitial oxygen content1 Subject content and scope of application1.1 Subject contentSJ/T 106271995
This standard specifies the method for measuring the decrease of oxygen content before and after thermal annealing to express the oxygen precipitation characteristics. 1.2 Scope of application
This standard applies to F-type annealed wafers with a room temperature conductivity of less than 0.1.cm, which can be thermally cycled to achieve single effect.
2 Referenced standards
GIVT155?Details Infrared absorption measurement method for intermediate content of silicon wafers (GB/1414330) 3 Principle of the method
The method is to determine the decrease of oxygen content of silicon wafers after annealing by infrared spectroscopy. The precipitation of oxygen is closely related to the decrease of oxygen content of silicon wafers after annealing. 4. Principle of the method
Infrared spectrophotometry with infrared conversion or grating type, wave length is 1000cm-", resolution is less than a.
6. Heat wave furnace: temperature range is 750.-1050, temperature control temperature ±2 degrees C. Suitable for 2 US, right boat:
Mountain: gas replacement and sample introduction.
5. Selection and preparation of test samples
5.1 Select a group of wafers for testing. Use this group of wafers including the concentration range, etc., within the range of 1.5Pm of the film oxygen content. At least two wafers should be selected. For example, if the range of the effect group is 3Pm, then this group should be at least 12 wafers.
Ministry of Electronics Industry of the People's Republic of China 1995-04-22 Issued 1995-10-01 Implementation
SJ/T1062 7-1995
5.2 The test shall meet the requirements of GB1557 to GB/T14143. 5.3 Use optical or micro-marking to distinguish each test material. 6
6.1 Measure the original sample according to GB1557 or GB/T14143 according to the sample composition. Record the oxygen value, wafer mark, measurement position, test date and measurement instrument. 5.2 After the silicon wafer is scalded, the test should be carried out as soon as possible. If the sample needs to be stored during cleaning and testing, it should be placed in a clean and closed box.
6.3 The heat treatment test of the silicon wafer is carried out according to Table 1. Table 1 Heat treatment of silicon wafer oxygen precipitant test route A
Test B
Test method
Selection
Push and pull
Rise and fall
Raise speed
l asot, t5h later.75oc, 4h
+5% dry oxygenbzxZ.net
4.21D.21./min
25ap/mim
Proof that the whole artificial production medium, the actual depth of the sinking process. 6.4 Put the sample into the stone center, be careful to avoid the product being stored, and use a pure non-metal vacuum device to push the product to avoid paint and dirt on the surface.
6,5 Open the work area, put the quartz boat into the right, push/pull the boat to the designated hot zone with a certain degree of speed (see Table 1),
6.6 Select the ring test A and the cycle test R to perform the heat treatment (see Table 1), and record the heat treatment data and the cycle used. 6.7 After the sample is heat treated, use oxygen to remove the surface oxide layer and wash the product piece. 6. At each measuring point of [O] of the product piece before the heat treatment, To measure the LO after heat treatment, the user shall use the equipment and environment used for the measurement before starting the measurement. In the table of recording the original data, record the final [ppma] (see Figure 2). The table shows the oxygen content in the plate [ppma]. The final [0] is marked with "0" less than the "standard oxygen" mark. The final [0] is marked with "standard oxygen" mark. SJ/T10627-1995. The desired reduction: * Only applicable to method 2; this is not applicable to method 1. 7 Calculation and result explanation: "Average oxygen content" standard information * 7.1 From the original intermittent oxygen content to the final [ppma], record the reduction in oxygen as a function of the reduction in oxygen. 7.2 Method 2 Case Description: 7.2.1 Method 1 || tt || 7.2.1.1 This method is used when the desired predetermined [] specification is obtained and a group of test samples have the same [] and each test energy [] range is less than 4 ppm. 7.2.1.2 If the mean [)] of different groups is greater than 0.5 ppm, the overpressure efficiency method cannot be used. 7.2.1.3 Determine the average [) and oxygen reduction values ​​and the corresponding deviations of each group of test products. 7.2.1.4 If the group of test samples has a mean value less than the desired air content, the group values ​​are considered equal. 7.2.22 Method 2
7.2.2.1 In order to obtain: (1) qualitative observations of the sedimentation characteristics of the test samples: (2) important characteristics of the sedimentation surface, it is necessary to distinguish between oxygen content and flow attenuation and use this method. 7.2.2.2 For each group of samples, the samples will be classified by the reduction effect. All samples within the time range of U.5p2ma[0] will be grouped together. 7.2.2.3 For each century, the average original 10) and the load reduction in each minute will be calculated. 7.2.2.4 This group of experiments points out that the oxygen reduction effect of the tablets in this group is improved. The line diagram and Figure 2 are examples. There is an equal area in each experiment. 1 Experiment A oxygen sedimentation characteristic curve [olepma T10627-1995] 2 Experiment B oxygen sedimentation characteristic curve 7.2.2.5 Note that the lines have an equal area, as shown in Figure 1 and Figure 2, where the slope changes are not opposite. In the low original [0] area, the reduction of oxygen is not necessarily in a certain amount in the original [0]. In some places, the oxygen reduction changes rapidly with the original [0] treatment. In the high original [0] area, the oxygen reduction center is proportional to the original [0]. 7.2.2.6 has been relatively large for each assembly. If the effect of each group is within the range of safety, it is considered to be equal. The report
should contain the following information:
date. 1 group data (ratio number, location of the measurement point, center or edge, etc.). 8.t.2 production of each piece of original 3.1.3 According to the original [0] of a group of samples, the average and standard deviation of the reduction of drugs are recorded. 8.2 In addition, the following reports are also sent by the parties on the month: 8.2.1 The average of the original night and the reduction of oxygen in the sample of the year is the average of the original night and the reduction of oxygen. 8.2.2 The average reduction of each group of bottles -
Additional remarks:
The curve of the original [].
This standard is under the jurisdiction of the Shandong Electric Power Research Institute. The 46th Beijing Research Institute of the Ministry of Industry and Information Technology is responsible for the original list. The main authors of this standard are: Xiu Jia, Ru Liang Dong, Li Ping, Duan Mian Guang.
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