This standard specifies the terminology, text symbols, ratings, characteristics, test methods, acceptance and reliability of thyristors. This standard applies to reverse blocking triode thyristors, bidirectional triode thyristors, environmental rated bidirectional diode thyristors and reverse conducting triode thyristors. GB/T 15291-1994 Semiconductor devices Part 6 Thyristors GB/T15291-1994 Standard download decompression password: www.bzxz.net

National Standard of the People's Republic of China
Part 6
Semiconductor devices
Part 6 Thyristors
Thyristors
GB/T 15291--94
This standard equivalently adopts the contents of IEC747-6 (1983) "Semiconductor devices Part 6 Thyristors" and its IEC747-6 (1991) Amendment Supplement No. 1".
1 Subject content and scope of application
This standard specifies the terminology, text symbols, ratings, characteristics, test methods, acceptance and reliability of thyristors. This standard is applicable to reverse blocking triode thyristors, bidirectional triode thyristors, environmental rated bidirectional diodes and reverse conducting triode thyristors.
2 Reference standards
IEC747-1 Semiconductor devices Part 1 General 3 Terms and text symbols
Note: The following terms with asterisk () do not apply to bidirectional thyristors. Types of thyristors
(See Figures 1 and 2)
Performance in three quadrants
Number of terminals
(Diode)
(Triode)
3.1.1 Reverse blocking diode thyristor*
Reverse blocking
Diode thyristor
Reverse blocking
Triode thyristor
Reverse conducting
Diode thyristor
Reverse conducting
Triode thyristor
A two-terminal thyristor that has no switching effect on the negative anode voltage and is in a reverse blocking state. 3.1.2 Reverse blocking triode thyristor
A three-terminal thyristor that has no switching effect on the negative anode voltage and is in a reverse blocking state. 3.1.2.1 Asymmetric thyristor
A reverse blocking triode thyristor whose rated reverse voltage is significantly lower than its rated off-state voltage. 3.1.3 Reverse conducting diode thyristor*
Secondary thyristor
Triode thyristor
A two-terminal thyristor that has no switching effect on the negative anode voltage, but can pass a large current in the reverse direction when the voltage is comparable to the on-state voltage.
Approved by the State Administration of Technical Supervision on December 7, 1994 and implemented on October 1, 1995
3.1.4 Reverse-conducting triode thyristor*
GB/T 15291-94
A three-terminal thyristor that has no switching effect on the negative anode voltage, but can pass a large current in the reverse direction when the voltage is comparable to the on-state voltage.
3.1.5 Bidirectional diode thyristor
A diode thyristor with basic phase switching performance in the first and third quadrants of the main characteristic. 3.1.6 Bidirectional trigger diode thyristor
A bidirectional diode thyristor with only three layers. 3.1.7 Bidirectional triode thyristor (triac)
A three-terminal transistor with basically the same switching performance in the first and third quadrants of the main characteristic. 3.1.B Gate Turn-Off Thyristor (GTO Thyristor) A thyristor that can switch from the on state to the off state by applying a gate signal of appropriate polarity. The three terminals that switch from the off state to the on state are 3.1.9 P-Gate Thyristor
A thyristor with the gate connected to the P region close to the cathode. This device is usually put into the on state by applying a positive signal between the gate and the anode. 3.1.10 N-Gate Thyristor*
A thyristor with the gate connected to the N region close to the anode. This device is usually put into the on state by applying a negative signal between the gate and the anode.
3.2 General Terms
3.2.1 Main Terminal
Two lobes through which the controlled current flows.
3.2.2 Anode Terminal
The terminal through which the positive current flows from the external circuit. 3.2.3 Cathode lobe
The terminal through which the positive current flows out to the external electrode. 3.2.4 Main terminal 1
Main terminal with a nominal value of \1” for the manufacturer.
3.2.5 Main terminal 2
Main terminal with a nominal value of \2” for the manufacturer.
3.2.6 Gate terminal
Terminal through which only control current flows out or in. Note: This control current is usually called gate current. 3.2.7 Main voltage
The voltage (potential difference) between the main terminals. Note: For reverse blocking or reverse conducting transistors, when the anode potential is higher than the cathode potential, the main voltage is positive. When the anode potential is lower than the cathode potential, the main voltage is negative. For reverse conducting transistors, the polarity of the main voltage (relative to the main terminal) must be specified. 3.2.8 Main current
The current flowing through the main terminal in addition to the gate current. 3.2.9 Anode-cathode voltage (positive-negative voltage) Anode voltage) The voltage between the anode sheath and the cathode. Note: When the anode potential is higher than the cathode potential, the anode voltage is positive, and when the anode potential is lower than the cathode potential, the anode voltage is negative. 3.2.10 Main (voltage-current) characteristics
The functional relationship between the main voltage and the main current with the gate current (if any) as a parameter, generally expressed by a graphical method (for bidirectional thyristors, see Figure 2).
3.2.11 Anode-cathode (voltage-current) characteristics *GB/T15291-94
The functional relationship between the anode voltage and the main current with the gate current (if any) as a parameter, generally expressed by a graphical method (see Figure 1). Note: When not mixed, this term can be referred to as "anode characteristics" or "characteristics". 3.2.12 On-state
corresponds to the main characteristics of the thyristor The state of the low resistance, low voltage part of the reverse blocking diode and triode thyristors. Note: In the case of reverse blocking devices, this definition only applies to the positive anode voltage. 3.2.13 Off state
corresponds to the state between the origin and the turning point of the main characteristic of the thyristor. Second limit
2 Reverse blocking
Tripolar blocking
Minimum on-state voltage
Continuous current reduction
Off state
Negative resistance region
Turning voltage
First quadrant
Turning point
New current
Due quadrant
Figure 1 Anode-cathode (voltage-current) characteristics of reverse blocking diode and triode thyristors Note: Curve α corresponds to a blue thyristor or diode thyristor with zero gate current, and curve 6 corresponds to the case where gate current exists. 3.2 .14 ​​Reverse blocking state*
The state of the reverse blocking thyristor corresponding to the part of the anodic characteristic where the reverse current value is less than the reverse breakdown voltage. 3-2.15 Negative differential resistance region
Any part of the main characteristic where the differential resistance is negative. 3.2.16 Turning point
Any point on the main characteristic curve where the differential resistance is zero and the main voltage reaches a maximum value. Second limit
Third limit
On-state,
Minimum on-state voltage.
Holding current
Turning point
Special voltage
First limit
Turning current
Four quadrants
Figure 2 Voltage-current characteristics of bidirectional diode and triode thyristors GB/T15291-94
Note: Curve. For a triode thyristor or a diode with zero gate current, curve 1 corresponds to the case where gate current exists. 3.2.17 Reverse conducting triode thyristor
3.2.17.1 Main characteristics of a reverse conducting thyristor Secondary sensitivity limit
Minimum conduction voltage
Maintenance voltage
Reverse conduction state
Three-quadrant
Negative partial resistance region
Axis voltage
Transition point
Break-over current
First quadrant
Four-quadrant
Figure 3 Anode-cathode voltage-current characteristics of a reverse conducting triode thyristor V-Reverse conduction threshold voltage
Note: Curve 2 corresponds to the case where gate current is given, and curve 3 corresponds to the case where gate current exists. 3.2.17.2 Reverse conduction state
corresponds to the state in the third quadrant of the anode-cathode characteristic of a reverse conducting triode thyristor. 3.2.18 Reverse conduction current
The current flowing through a reverse conducting thyristor when a negative anode-cathode voltage is applied. 3.2.19 Reverse conduction average current
The average value of the reverse conduction current over a full cycle. 3.2.20 Reverse conduction through-current
The reverse conduction current whose continuous application will cause the maximum rated equivalent junction temperature to be exceeded, but whose duration is limited and will not exceed the maximum rated equivalent junction temperature.
Note: The reverse conduction through-current is required to be withstood when the device is subjected to the rated working voltage. 3.2.21 Reverse surge current
A reverse current caused by abnormal circuit conditions (such as faults) that will exceed the rated maximum junction temperature when applied continuously. It is assumed that this current occurs very rarely and the number of times it occurs during the operating life of the device is limited. 3.2.22 Reverse threshold voltage
The reverse voltage value determined by the intersection of the reverse conduction characteristic approximation line and the voltage axis. 3.2.23 Reverse slope resistance
The resistance value calculated from the slope of the reverse conduction characteristic approximation line. 3.2.24 Reverse power dissipation
The power dissipated by the reverse conduction current. GB/T15291-94
3.2.25 Thermal resistance of on-state current (for reverse conducting triode thyristors) The temperature difference between two specified points or areas divided by the power dissipated by the on-state current under thermal equilibrium conditions (see note to 3.2.26). 3.2.26 Thermal resistance to reverse conduction current
The temperature difference between two specified points or areas divided by the power dissipated by the reverse conduction current (see Note) under thermal equilibrium conditions. Note: For reverse conducting thyristors, the change in junction temperature in the silicon chip caused by the power dissipation (P) of the forward current and the power dissipation (Pcc) of the reverse conduction current occurring at different locations.
3.3 Terms related to ratings and characteristics
3.3.1 Main voltage, anode-cathode voltage
3.3.1.1 Forward voltage (V)*
Positive anode voltage.
3.3.1.2 Breakover voltage (V0)
Main voltage at the breakover point.
3.3.1.3 Reverse voltage (Vr)*
Negative anode voltage.
3.3.1.4 Reverse DC voltage (V)*
The constant voltage that a thyristor is subjected to in the reverse blocking state. 3.3.1.5 Reverse breakdown voltage (for reverse blocking thyristors) (VBR)\The reverse voltage when the reverse current is greater than a certain specified value. 3.3.1.6 Reverse operating peak voltage (for reverse blocking thyristors) (VRwM)*The maximum instantaneous reverse voltage that appears across a thyristor, excluding all repeated and non-repetitive transient voltages (see note to 3.3.1.15).
3.3.1.7 Reverse repetitive peak voltage (reverse maximum repetitive voltage) (for reverse blocking thyristors) (VM)*The maximum instantaneous reverse voltage that appears across a thyristor, including all repeated transient voltages, but excluding all non-repetitive transient voltages (see note to 3.3.1.15).
3.3.1.8 Reverse non-repetitive peak voltage (reverse transient peak voltage) (for reverse blocking thyristors) (VrsM) Any non-repetitive maximum instantaneous transient reverse voltage appearing across the thyristor (see note to 3.3.1.15). 3.3.1.9 On-state voltage (V)
The main voltage when the thyristor is in the on-state.
3.3.1.10 Threshold voltage (V(o)
The on-state voltage value determined by the intersection of the on-state characteristic approximation line and the voltage axis. 3.3.1.11 Off-state voltage (Vp)
The main voltage when the thyristor is in the off-state.
3.3.1.12 Off-state DC voltage (V)bZxz.net
The constant main voltage that the thyristor withstands when it is in the off-state. 3.3.1.13 Off-state working peak voltage (VmWM) The maximum instantaneous off-state voltage that appears across the thyristor, but does not include all repetitive and non-repetitive transient voltages (see the note to 3.3.1.15).
3.3.1.14 Off-state repetitive peak voltage (V DRM) The maximum instantaneous repetitive off-state voltage across the thyristor, including all repetitive transient voltages, but excluding all non-repetitive transient voltages (see note to 3.3.1.15).
3.3.1.15 Off-state non-repetitive peak voltage (VpsM) The instantaneous off-state voltage of any non-repetitive maximum instantaneous value across the thyristor. GB/T15291-94
Note: Repetitive voltage is usually a function of the circuit and increases the power consumption of the device. Non-repetitive off-state voltage is usually caused by external factors and it is assumed that its influence has completely disappeared before the second non-repetitive off-state voltage arrives. 3.3.2 Main current, anode current, cathode current 3.3.2.1 Breakover current (IcBm))
Main current at the breakover point.
3.3.2.2 Reverse current (i)*
Main current at negative anode voltage.
3.3.2.3 Reverse blocking current (of a reverse blocking thyristor) The reverse current portion of the reverse blocking thyristor when it is in the reverse blocking state. 3.3.2.4 Resistive reverse current
The steady-state reverse current portion excluding the reverse recovery current (if any). 3.3.2.5 Reverse recovery current (iRe) The reverse current portion generated during the reverse recovery period. 3.3.2.6 On-state current (i)
The main current when the thyristor is in the on-state.
3.3.2.7 On-state DC current (1)
The on-state current that does not vary with time or whose variation with time can be ignored. 3.3.2.8 On-state average current (of a reverse blocking thyristor) (1T(AV)* The average value of the on-state current in one cycle. 3.3.2. 9 On-state root mean square current (IT(RMS)) The root mean square value of the on-state current in one cycle. 3.3.2.10 On-state repetitive peak current (ITRM) The on-state peak current including all repetitive transient currents. 3.3.2.11 On-state overload current (1(ov)) A on-state current that will cause the junction temperature to exceed the rated value due to continuous operation, but the junction temperature will not exceed the rated value by limiting its duration. Note that the device can withstand this overcurrent frequently depending on the application requirements, but it should also withstand the normal operating voltage. 3.3.2.12 On-state surge current (ITSM)
A on-state overload current caused by an abnormal circuit condition (such as a fault) that causes the junction temperature to exceed the rated maximum junction temperature. It is assumed that this current rarely occurs and the number of occurrences during the recommended life of the device is limited. 3.3.2.13 Climbing current (IL)| |tt||The minimum main current required to maintain the on-state of the thyristor after it has just switched from the off-state to the on-state and the trigger signal has been removed. Note: The current value depends on the working conditions. 3.3.2.14 Holding current (1H)
The minimum main current required to maintain the thyristor in the on-state. 3.3.2.15 Off-state current (in)
The main current when the thyristor is in the off-state.
3.3.2.16 Peak current that does not destroy the tube shell
The peak current that should not be exceeded to prevent the tube shell from rupturing or plasma beam emission under the conditions of specified current, waveform and time. Note: The meaning of this definition is that when the device is subjected to the peak current that does not destroy the tube, if there is no plasma beam emission, micro cracks may occur in the tube shell. The tube shell should not crack, and there should be no melting or sudden flames on the outside of the device. 3. 3.2. 17 It
Under the conditions of specified power supply, waveform and time, in order to prevent the tube shell from breaking or plasma beam emission, the value of 1 that should not be exceeded is given by the following formula:
Where: tw—current pulse duration. GB/T 15291—94
Note: The meaning of this definition is: when the device is subjected to the value of tube shell not being damaged, if there is no plasma beam emission, fine crack chains may appear in the tube shell. The bright part of the tube should not crack, and there should be no melting or sudden flame on the outside of the device. 3.3.3 Gate characteristics
3.3.3.1 Gate voltage (Va)
The voltage between the gate terminal and the specified main terminal. 3. 3. 3.2 Gate forward voltage (VFc)*
The positive gate-cathode voltage in P-gate thyristors and the negative gate-anode voltage in N-gate thyristors. 3.3.3.3 Gate forward peak voltage (VFuM)*The maximum instantaneous value of all gate forward transient voltages. 3.3.3.4 Gate reverse voltage (Vc)*
The negative gate-cathode voltage in P-gate thyristors and the positive gate-anode voltage in N-gate thyristors. 3.3.3.5 Gate reverse peak voltage (Vc)*The maximum instantaneous value of all gate reverse transient voltages. 3.3.3.6 Gate trigger voltage (VGr)
The gate voltage required to generate the gate trigger current. 3.3.3.7 The maximum gate voltage at which the gate is not triggered (Vcn) and does not cause the transistor to switch from the off state to the on state. 3.3.3.8 Gate turn-off voltage (Vcg>
The gate voltage required to generate the gate turn-off current. Note: Not all transistors can be turned off by gate. 3.3.3.9 Gate forward current (IFg)*
The gate current corresponding to the gate forward voltage. 3.3.3.10 Gate forward peak current (IeGM) The maximum instantaneous value of all gate forward transient currents Gate forward current. 3.3.3. 11 Gate reverse current (Inc) * Gate current corresponding to the gate reverse voltage. 3.3.3.12 Gate trigger current (IGT)
The minimum gate current that causes the thyristor to switch from the off state to the on state. 3.3.3.13 Gate non-trigger current (Icp) The maximum gate current that does not cause the thyristor to switch from the off state to the on state. 3.3.3.14 Gate turn-off current (Icg)
The minimum gate current that causes the thyristor to switch from the on state to the off state. Note: Not all thyristors can be turned off by gate. 3.3.4 Dissipated power
3.3.4.1 Reverse dissipated power (for reverse conducting thyristors) (P) The dissipated power generated by the reverse current.
3.3.4.2 On-state dissipated power (P)
The power dissipated by the on-state current.
3.3.4.3 On-state average power dissipated (PT(AV)) GB/T 15291—94
The average value of the product of the instantaneous on-state voltage and the instantaneous on-state current in one cycle. 3.3.4.4 Turn-on dissipated power (Prr)
The power dissipated in the thyristor during the transition from the off-state voltage to the on-state current. 3.3.4.5 Turn-off dissipated power (PRQ, PDQ) The power dissipated in the thyristor during the transition from the on-state to the off-state or to the reverse blocking voltage.
3.3.5 Other characteristics
3.3.5.1 On-state characteristic approximate straight line
A straight line connecting two specified points on the on-state characteristic curve, which is used to approximate the on-state voltage-current characteristics. 3.3.5.2 On-state slope resistance (r)
The resistance determined by the slope of the on-state characteristic approximate straight line. 3.3.5.3 Thermal resistance (R)
The ratio of the difference between the equivalent temperature of the device and the temperature of the external specified reference point to the steady-state power dissipation of the device. Note: (i) The unit of thermal resistance is usually C/W ② It is assumed that all heat flow generated by the power dissipation of the device flows through the thermal resistance. 3.3.5.4 Transient thermal impedance (Zh)
The ratio of the change in the difference between the equivalent temperature and the temperature of the external specified reference point at a certain time interval to the power dissipated by the skin change at the initial time interval that causes the temperature difference change. Note: ① Immediately before this time interval, the temperature distribution inside the device does not change with time. ② Transient thermal impedance is given as a function of time. 3.3.5.5 Equivalent junction temperature, internal equivalent temperature (T, T) are based on the thermoelectric characteristics of semiconductor devices, simplified 3.3.5.6 Reverse recovery time (of reverse blocking thyristor) (t.) When switching from on-state to reverse blocking, the time interval from the instant when the on-state current passes through zero to the moment when the reverse current decreases from the peak value to a certain specified value (see Figure 4), or to the zero point of the reverse current extrapolated (see Figure 5). Note: The so-called extrapolation is the intersection of the line extending from the two specified points A and B and the time axis (see Figure 5). fr
Figure 4 Current waveform of reverse recovery time
3.3.5.7 Circuit commutation turn-off time (tg) GB/T 15291—94
Figure 5 Reverse recovery time waveform
After the anode voltage circuit is switched externally, the minimum time interval from the moment the on-state current decreases to zero to the moment when the thyristor can withstand a certain anode voltage without opening and is closest to zero (as shown in Figure 6). 、
Understand the power supply
Anode current
Anode voltage
Reverse conduction current
Figure 6 Circuit commutation turn-off time waveform
3.3.5.8 Off-state recovery time (for reverse conducting triode thyristors) (ta) When changing from reverse to off-state, the time interval from the moment when the reverse current passes through zero to the moment when the off-state current decreases from the peak value IDM to a specified low value (as shown in Figure 7), or to the zero point of the off-state current extrapolated (as shown in Figure 8). 3.3.5.9 Maintaining turn-off interval (tm)
GB/T 15291—94
Figure? Current waveform of off-state recovery time
Figure 8 Current waveform of off-state recovery time (extrapolation method) The time interval from the moment when the main current of the semiconductor device of the converter valve decreases to zero to the moment when the same semiconductor device can withstand the off-state voltage.
Note: The maintenance off interval should be longer than the circuit commutation off time of the semiconductor device, both of which depend on the working conditions of the converter. 3.3.5.10 Gate control turn-on time (tg) The time interval required for the gate trigger pulse to turn the thyristor from the off state to the on state. Note: This time interval generally starts from the specified point on the leading edge of the gate pulse to the moment when the main voltage drops from the initial value to the specified value. The turn-on time is the sum of the delay time and the rise time. Figure 9 is an example of passband. GB/T 15291—94
Figure 9 Turn-on characteristics of thyristor
—Delay time +,—Rise time - Gate control turn-on time, curve α-Gate pulse for turn-on, curve. —Main voltage waveform 3.3.5.11 Gate control delay time (tgta) The time interval from the specified point of the gate pulse front edge to the time when the dust voltage drops to a specified value close to the initial value during the process of using the gate pulse to turn the thyristor from the off state to the on state. Note: When there is no misunderstanding, this term can be shortened to "delay time", 3.3.5.12 Gate control rise time (tr, t) The time interval from the time when the main voltage drops to a specified value close to its initial value to the time when the main voltage drops to a specified value during the process of using the gate pulse to turn the thyristor from the off state to the on state. Figure 8 is an example of the turn-off current waveform. Note: When there is no misunderstanding, this term can be shortened to "rise time". 3.3.5.13 Gate controlled turn-off time (f) The time interval from a specified point when a reverse gate current pulse of a specified waveform is applied to a thyristor to a specified value close to the initial value when a gate pulse is used to turn the thyristor from the on state to the off state. Figure 10 is an example of a turn-off current waveform. 10%
Figure 10 Turn-off current characteristics of a thyristor
Edit-Gate controlled turn-off time:
Curve α - Gate pulse that causes turn-off, Curve 6 - Main current waveform 3.3.5.14 Critical rate of rise of on-state current ((di/dt)cr) The maximum rate of rise of on-state current that the thyristor can withstand without adverse effects under specified conditions. 3.3.5.15 Critical rate of rise of off-state voltage ((d/dz)cr) The maximum rate of rise of main voltage that does not cause a transition from the off state to the on state under specified conditions. 3.3.5.16 The critical rate of rise of the commutation voltage (for reverse conducting triode transistors) (d/dt(c)) is the maximum rate of rise of the main voltage that does not cause a transition from the off state to the on state immediately after the reverse current is turned on. 3.3.5.17 The critical rate of rise of the commutation voltage (for bidirectional thyristors) (dv/dt(c)) plus the critical rate of rise of the off state voltage (for bidirectional thyristors) (dv/dt(c)) is the maximum rate of rise of the main voltage that does not cause a transition from the off state to the on state immediately after the reverse direction on state current is turned on. 3.3.5.18 Recovery charge (Q,)
GB/T 15291-94
The total charge recovered by the thyristor within the specified integration time after switching from the specified on-state current condition to the specified reverse condition: Wuzhong: - the moment when the current crosses zero:
- the specified integration time (see Figure 11).
Note: The recovery current includes two parts due to carrier storage and depletion layer capacitance. i-+
Figure 11 Current waveform of recovery charge
3.3.5.19 Off-state recovery charge (for reverse conducting triode thyristor) (Qa) The total charge recovered by the thyristor after switching from a specified reverse current condition to a specified off-state condition. 3.4 Symbols
3.4.1 General
The general rules of TEC747-1 Chapter 5 apply. 3.4.2 Additional general superscripts
In addition to the general superscripts given in TEC747-1 Chapter 5, there are the following special superscripts for thyristors: 3.4.2. 1 About current, voltage and power Aa=anode
K, k=cathode
G, g=gate
D, d--off state, not triggered
T, t=on state, triggered
H, h=maintain
(3O) transition
Qq=turn off
(TO)=threshold
RC-reverse conduction state (reverse conduction three-pass thyristor) 3.4.2-2 About electrical parameters
t-turn on
q=turn off
T=slope
3.4.3 Text symbol table
For use in the field of thyristors, the text symbols contained in the following tables are specified, and the compilation of these symbols conforms to general rules. 3.4.3.1 Main voltage, anode-cathode voltage
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