SJ 3244.3-1989 Measurement method of crystal orientation of gallium arsenide and indium phosphide single crystals SJ3244.3-1989 standard download decompression password: www.bzxz.net

Standard of the Ministry of Machinery and Electronics Industry of the People's Republic of China Measurement Method of Crystalline Orientation of Gallium Arsenide and Phosphide Steel Single Crystal Subject Content and Scope of Application
SJ3244.3—89
This standard specifies the X-ray diffraction measurement principle, measurement steps, result calculation and accuracy of the crystallographic orientation of the end face of arsenide and phosphide steel single crystal ingots and wafers.
This standard is applicable to the crystallographic orientation measurement of single wafers whose wafer surface is roughly parallel to (within 10°) a low Miller index atomic plane.
2 Measurement Principle
2.1 Bragg's Law
The atoms in the crystal are arranged periodically in three-dimensional directions. Any orientation can be regarded as composed of a series of parallel atomic planes with a spacing of d. When a beam of monochromatic X-rays with a wavelength of irradiated hits the wafer, diffraction occurs if the Bragg's law is satisfied. 2dsino=n^
Wherein: d is the interatomic distance, A,
R is the wavelength of X-ray, A;
0 is the Bragg angle, degree;
n is the diffraction order, a positive integer.
The geometric relationship of Bragg's law is shown in Figure 1. Atoms
Bragg beam
Figure 1 Schematic diagram of Bragg diffraction conditions
2.2 Diffraction conditions and diffraction Bragg angles of Ga2O3 and InP2 Ga2O3 and InP2 are both cubic sphalerite structures. In the cubic system, the lattice constant a has the following relationship with the interatomic distance d: d=a/h2+K2+12
Wherein h, K, and 1 are Miller indices, changing the Bragg index The form of Lager's law is: sinf = na/h2+K2+12+/2a
Approved by the Ministry of Machinery and Electronics Industry of the People's Republic of China on March 20, 1989 (1)
(2)
(3)
Implemented on March 25, 1989
SJ3244.3-89
The condition for the sphalerite structure to produce diffraction is: h, K, 1 are all odd numbers, and the successors are all even numbers. Moreover, h+k+1 can be divided by 4. The following table lists the Bragg angles of some low-index surfaces that produce diffraction under this condition. Table Bragg angle of gallium arsenide and indium phosphide
Cukp radiation input 1.54178A
Reflection surface
2.3 Principle of determination by X-ray goniometer
Arsenide
a=5.6534A
13°49
22°41
26°54
36°30
41°55\
Phosphating steel| |tt||21°45
25°48
31°42°
34°55
40°30
M-X-ray tube, S-gain slit, G-counting tube, B-sample wafer (the line represents the atomic plane that produces diffraction) Figure 2 Principle diagram of X-ray goniometer orientation
Determining the crystal orientation of a single wafer is actually to determine the deviation angle between the macroscopic surface of the wafer and a low-index atomic plane. Install the wafer on the goniometer sample stage, rotate the sample crystal, and when the diffraction maximum appears, the angle between the incident ray and the corresponding atomic plane is the Bragg angle, and the angle Φ read from the goniometer is the angle between the incident ray and the sample macroscopic surface, and the difference is the deviation angle of the sample crystal macroscopic surface relative to the atomic plane. In order to measure the difference between the p angle and the 0 angle, the sample crystal needs to be rotated around its surface normal by 90°, 180°, and 270° for four measurements.
Instruments
aX-ray machine host
bX-ray goniometer with an accuracy of 30\.
4 Measurement steps
SJ3244.3-89
4.1 Adjust the goniometer and calibrate the reading with a standard crystal. 4.2 According to the material and crystal plane of the wafer to be measured, check the table in 2.2 or calculate the Bragg angle e value according to formula (3). 4.3 Place the wafer accurately at the center of the goniometer sample stage, place the counter tube at position 20, rotate the sample (the rotation axis is the normal of the plane formed by the incident ray and the reflected ray), and when the diffraction intensity reaches the maximum, record the rotation angle of the goniometer sample stage pl.
4.4 Rotate the wafer around the surface normal in the same direction by 90°, 180°, and 270°, repeat operation 4.3 at each position, and measure the diffraction angle at each position respectively: , Φ3, A4, see Figure 3. 4.
Figure 3 Four positions where the wafer rotates around the surface normal 4.5 When measuring the crystal orientation of the end face of a single ingot, place the ingot on the goniometer sample holder so that its end face is close to the test plate, and repeat operations 4.1 to 4.4.
5 Calculation of test results
Calculate the horizontal component α and vertical component β of the wafer deviation angle according to the following formula: a (ps)
(4)
β=a (—)
Calculate the wafer deviation angle according to the following formula:
cospcosα cos
When Φ is less than 5°, (5) is simplified to: SJ3244.3—89
2=α2+β2www.bzxz.net
6 Report
The report should include the following:
a. Sample source and number,
b, crystal deviation angle Φ;
c. Drawing to indicate the deviation angle orientation;
d, test date and tester.
The accuracy of this method is 15.
Additional notes:
This standard was drafted by the 13th Institute of the Ministry of Machinery and Electronics Industry. The main drafter of this standard: Sun Biyun
(6)
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