SJ 3244.5-1989 Test method for compensation degree of gallium arsenide and indium phosphide materials SJ3244.5-1989 Standard download decompression password: www.bzxz.net

Standard of the Ministry of Machinery and Electronics Industry of the People's Republic of China Test method for compensation degree of gallium arsenide and indium phosphide materials 1 Main content and scope of application
SJ3244.5—89
1.1 Subject content This standard specifies the measurement principle, instrumentation, sample preparation and test analysis methods for determining the compensation degree of gallium arsenide and indium phosphide materials.
1.2 Scope of application This standard is applicable to the test and analysis of the compensation degree of n-type, p-type arsenide and indium phosphide single crystals and high-resistance substrate epitaxial layers, and semiconductor materials with carrier concentrations in the range of 1×101～5×1015cnl-3. In principle, it is also applicable to the test and analysis of the compensation degree of other and group V compound materials. 2 Reference Standards
SJ3244.1 "Test Method for Hall Mobility and Carrier Concentration of Gallium Phosphide and Steel Phosphide Materials" Measurement Principle
Use the neutrality equation of the relationship between carrier concentration and temperature change to perform computer fitting analysis on the n(P)-T-1 relationship curve to obtain the compensation degree. The neutrality equation is: (taking n-type samples as an example) n(n+NA)
N-NA-n
Where:
Ne=2(2nma kT
The relationship between the ionized impurity concentration is:
n300=Np-NA
Where: n8 carrier concentration;
Rl-Hall coefficient;
e-electron charge
Nc-effective state density;
N,-donor impurity concentration,
NA-acceptor impurity concentration,
E,-shallow donor impurity ionization energy,
ma-electron effective mass,
k-Boltzmann constant
h-Planck constant
-Hall factor,
cm3/C,
gA-energy level degeneracy factor (depending on the material) Ministry of Machinery and Electronics Industry of the People's Republic of China 1989-0 3-20 approved (-Ei/kT)
（2）
（3）
1989-03-25 implementation
SJ3244.5-89
n300一 is the carrier concentration at temperature T=300K. cn-3. Based on formulas (1), (2), (3) using the principle of least squares method, and appropriately adjusting the five quantities gA, m, N, NA, Ei for numerical fitting, the compensation degree K is obtained. K,-V/Na
Kn=NA/N,
The computer fitting analysis block diagram is shown in Appendix VIII. (P) type
(n) type...
（4）
This method is based on the SJ3244.1 standard, and the sample Make variable temperature measurements. Calculate the number of tests by formula (6) n=r/eRH·(6) to obtain the n-T-1 relationship curve. 4 Instruments and equipment
4.1 For samples in low resistance conditions, the test system shall be carried out in accordance with the SJ32441 standard (except for the sample holder). 4.2 When the sample exhibits high resistance or semi-insulation, the differential electrometer technology is used. B
Electrometer
Electrometer
Figure! Schematic diagram of differential electrometer technology measurement power supply
The input impedance of a single-channel electrometer or a dual-channel electrometer should be greater than 10129, and the output impedance of a constant current source should be greater than 101294.3 Temperature measurement and control device
The temperature control device is modified from a DWT--702 precision temperature controller. Temperature control See Appendix B for the block diagram. For temperature measurement, platinum resistance thermometer, carbon resistance thermometer, iron-iron resistance thermometer or gold-iron thermocouple can be selected in the low temperature section; copper-constantan thermocouple can be selected in the high temperature section. The measuring temperature range is 4.2~400Kbzxz.net
The temperature control accuracy in the low temperature zone is ±0.05K
The temperature control accuracy in the high temperature zone is ±0.10K.
4.4 Sample holder
The sample holder is shown in Figure 2.
Brass sleeve
Thin insulation layer
Evacuate
Thermometer
8oo88g
Schematic diagram of sample holder
Heating furnace
SJ3244.5—89
Made of brass (or stainless steel). The heating system includes a heat sink (made of copper), a heating furnace (different heating powers should be used for high and low temperature zones, and the heating wire should not be inductively wound), and a thermometer (placed in the heat sink to indicate the sample temperature). The sample should be close to the insulation layer, and there should be a brass vacuum envelope (vacuum degree up to 0.1Pa) outside the sample holder. High insulation is required between the leads and between the electrodes. All components are required to be able to withstand high temperatures (4.2K) and high temperatures (400K). 4.5 Dewar flask:
The dewar flask can be made of quartz glass or non-magnetic metal materials that can be placed between magnetic poles. It can also be placed in a sample holder, and an observation window must be left. It is generally thick on the top and thin on the bottom. When using liquid ammonia, a double-layer dewar flask should be used. The outer dewar is filled with liquid nitrogen (for heat preservation), the inner dewar is filled with liquid nitrogen, and the bottle mouth is covered.
4.6 Magnet
Magnetic pole spacing is greater than 5cm, adjustable;
Magnetic field strength 0~10000G, adjustable
Magnetic field inhomogeneity should be less than 1%.
5 Sample preparation
Sample preparation is carried out according to the requirements of SJ3244.1 6 Test steps
6.1 Test environment: In order to ensure that the test system is not interfered by external electromagnetic signals. The test should be carried out in a shielded room, and the test environment should maintain a constant temperature (2530°C) and constant humidity (<60%) to ensure that the insulation performance of the test equipment is good and there is no leakage on the sample surface.
6.2 Place the sample with a clean, dry and surface leakage-free surface on the sample rack, seal it in the Dewar bottle between the magnets, and place it in the center of the magnetic poles. The magnetic field should be perpendicular to the sample surface 6.3 The sample chamber is evacuated to 0.1Pa
6.4 Add liquid nitrogen and liquid ammonia to reduce the temperature of the sample rack system. 6.5 Select the starting temperature according to the sample requirements, perform temperature control, and measure after the temperature stabilizes. 6.6 Apply a magnetic field to measure the Hall coefficient RH.
Measure low-resistance products according to SJ3244.1 method. When measuring high-resistance samples, pay attention to the suppression of common-mode voltage and choose a suitable grounding point to ensure stable measurement readings.
If a dual-channel electrometer system is selected, the measurement process is the same as that of low-resistance measurement. If a single-channel electrometer system is used, two potential measurements are required, and the potential difference is obtained by subtracting the two voltages. 6.7 Set the next temperature point. After the temperature stabilizes, repeat step 6.6 until the entire temperature range is measured and the n-T1 relationship curve is obtained.
6.8 To reduce the error, the temperature measurement should be closely spaced in the low temperature area, and the 5-1 T~1 measurement curve should show an obvious deionization process (the curve should be smooth and not distorted). 7 Data processing
7.1 The measured data obtained at different temperatures are calculated using the formula in SJ3244.1, and the factors are corrected (Y-1 can be used for phosphated and phosphated steel). 3-
SJ3244.5-89
7.2 The compensation degree K is obtained by computer fitting analysis using the electroneutrality equation of the relationship between carrier concentration and temperature. 7.3 Test report
The test report should include the following contents:
Sample source,
Sample number:
Test conditions,
Test curve and analysis results;
Tester's name, test unit
Test date.
Appendix A
Block diagram of computer fitting analysis
(reference)
xax,+sp
XX+IIP
SJ3244.5—89
Shrinkage data
n(n+NA)
AThiexp!
a-NePi
and the one connected by least squares The generation step size is set in the appropriate generation sub-P H-0.1
S=2H(+1)
Xex-EP
(ayst)
S=0.5F(0/(2s-FI-2F(25-2H)+F(2S-31)F。-2F,+F,
X+(SS,P,
NoN)X,
N,-N,-X, AE/KX
Controlled temperature meter
SJ3244.5---89
Attached scene B
Temperature control and measurement
(reference)
Computer
Electrical network
Micro-optimized amplifier
PID simplified
SCR actuator
Voltmeter
Measuring plate thermometer
SJ3244.5-89
Appendix C
Experimental example
(reference)
The variable temperature Hal1 measurement was performed on the n-type Honghua imaging material, and the relationship between the carrier concentration and temperature was obtained. The data are as follows:
(cm-\)
×131a
×101s
×10t4
×1018
×1014
According to the method provided in this standard, the above data were fitted and analyzed by computer, and the compensation degree Kn=N/N，=48.2% was obtained. During the fitting process, the impurity activation energy E， was also determined. This value is consistent with the value published in the literature. The fitting curve is shown in the figure.
n-type gallium arsenide
L00/T(k)
Additional notes:
Eb2.642-03(EU)
Na/Np=48.2%
LG(N)n(Cn1-3)
Figure C is a computer fitting curve
This standard was drafted by the 46th Institute of the Ministry of Machinery and Electronics Industry. The main drafters of this standard are Zhang Youli, Sun Yizhi and Xie Chongshu7
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