This specification specifies the detailed requirements for 3DG111 NPN silicon high frequency low power transistor (hereinafter referred to as device). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices". SJ 20059-1992 Semiconductor Discrete Device 3DG111 NPN Silicon High Frequency Low Power Transistor Detailed Specification SJ20059-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3DG111 NPN silicon high frequency low power transistor (hereinafter referred to as device). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices".

Military Standard FL5961 for Electronic Industry of the People's Republic of China
Semiconductor Discrete Devices
SJ20059—92
3DG111, 3DG120
NPN Silicon High-Frequency Low-Power Transistor
Detailed Specification
Semiconductor Discrete DeviceDetail specification for silicon NPN high--frequenclow-powertransistoroftype3DG111and3DG1201992-11-19 Issued
China Electronics Industry Corporation
1993-05-01 Implementation
1 Scope
Military Standard for Electronic Industry of the People's Republic of China Semiconductor Discrete Devices
3DG111 NPN Silicon High-Frequency Low-Power TransistorDetailed Specification
Semiconductor Discrete DeviceDetailed Specification specificationforsiliconNPNhigh-frequencylow-powertransistoroftype3DG1111.1 Subject content
SJ20059—92
This specification specifies the detailed requirements for 3DG111 type NPN silicon high-frequency low-power transistor (hereinafter referred to as device). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices".
China Electronics Industry Corporation Issued on November 19, 1992 Implemented on May 1, 1993
1.2 Dimensions
SJ2005992
The dimensions should comply with the A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1:
Terminal polarity:
1. Emitter
3. Collector||tt| |Figure 1 Dimensions
A3-01B
1.3 Maximum Ratings
3DGI11B
3DG111C
3DGI11E
3DG111F
TA-25C
Te-25℃
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Note: 1) When T^>25C, derate linearly by 1.7mW/C. 2) When Te>25C, derate linearly by 5.7mW/℃. Main electrical characteristics (T^=25℃)
3DG111B
3DG111C
3DG111E
3DG111F
3DG111B
3DG111C
3DG111E
3DG111F
Min. value
Max. value
f=1MHz
Vcs-10V
Min. value
Citation File
GB4587—84
GB7581-87
GJB33—85
GJB128--86
Maximum value
hrE(Vc-10V)
lc=3mA
Minimum value
Va-10V
le=10mA
f=100MHz
Minimum value
Maximum value
Bipolar crystal Tube test method
Maximum value
Ie-10mA
Minimum value
VcE(at)
le=10mA
Ig=1mA
Minimum value
Dimensions of discrete semiconductor devices
General specification for discrete semiconductor devices
Test method for discrete semiconductor devices
Maximum value
Maximum value
VrE(at)
-65~～+2 00
Ic=30mA
Minimum
le-10mA
Minimum
Maximum
Maximum
Veg=10V
Ic=10mA
f-30MHz
MinimumMaximum
3 Requirements
3.1 Detailed requirements
SJ20059-92
All requirements shall comply with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions
The design, structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Lead terminal material and coating
The lead terminal material shall be Kovar. The lead terminal surface coating shall be gold-plated, tin-plated or immersion tin. The selection of terminal material and coating requirements or other requirements should be clearly specified in the contract or order (see Chapter 6). 3.3 Marking
The marking of the device shall be in accordance with the provisions of GJB33.
4 Quality Assurance Provisions
4.1 Sampling and Inspection
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification Inspection
Qualification Inspection shall be in accordance with the provisions of GJB33.
4.3 Screening (GT and GCT grades only)
Screening shall be in accordance with Table 2 of GJB33 and this specification. The following tests shall be performed in accordance with Table 1 of this specification, and devices exceeding the specified limit values ​​shall not be accepted.
(See Table 2 of GJB33)
7. Intermediate parameter test
8. Power aging
9. Final test
4.3.1 Power aging conditions
Power aging conditions are as follows:
TA=25±3℃
Vcn=20V(3DG111B,E)
Vc=30V(3DGI111C.F)
Ptot-300mW
Note: It is not allowed to add a heat sink or strong air cooling to the device. 4.4 Quality consistency inspection
Icon and hres
See 4.3.1
Test or test
According to the A2 group in Table 1 of this specification;
AIcnor=100% of the initial value or 5nA, whichever is greater: Ahrea=±15% of the initial value
Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A inspection
Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B inspection
SJ20059—92
Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the variation (4) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.4.3 Group C inspection
Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and change (△) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions: 4.5.1 Pulse test
Pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB128. Table 1 Inspection of Group A
Inspection or test
Group A1
Appearance and mechanical inspection
Group A2
Collector-base breakdown voltage
3DG111B.E
3DG111C.F
Collector-emitter breakdown voltage
3DG111B.E
3DG111C, F
Emitter-base breakdown voltage
Collector-base cut-off current
3DG111B, E
3DG111C.F||tt ||Emitter-base cut-off current
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
, Collector-emitter saturation voltage drop
Base-emitter saturation voltage drop
GJB128
This specification
Appendix A
GB4587
Emitter-base open circuit
Ic=10μA
Emitter-base open circuit
Ic=5mA
Pulse method (see 4.5.1)
Collector-base open
Ig=10μA
Emitter-base open
Vca=30V
Vca-50V
Collector-base open
Vck10V
Vce-10V
Ic=3mA
Vee-10V
Ie=10mA
VcE=-10V
Ic=30mA
Te=10mV
Is=ImA
le=10mA
Ig-ImA
TPE symbol
VRREnO
Vce(a t)
VsE(at)
VcBR)CBO
V(BRXCEO
Limiting Value
Minimum Maximum Value
Inspection or Test
A3 Group
High Overflow Operation:
Collector-Base Load Stop Current
3DG111B.E
3DG111C.F
Low Temperature Operation:
Forward Current Transfer Ratio
A4 Group
Open Circuit Output Capacitance
Characteristic Ratio
3DG111B.C
3DG111E.F
Power Gain
A5, A6 and A7 Group||t t||Not applicable
Inspection or test
Group B1
Solderability
Durability of marking
Group B2
Thermal shock (temperature cycle)
a. Fine leak detection
b. Coarse leak detection
Final test:
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Continued Table 1
GB4587
TA=+150℃
Emitter-base open circuit
VcB=30V
Vcg-50V
TA—-55C
Vca-10V
Ic10mA
Vc-10V,lg=0||tt| |Vcg=10V,lc=10mA
f100MHz
VcE-10V
f-30MHz
Table 2 Group B Inspection
GJB128
See Table 4, Steps 1, 3 and 4
TPE Symbol
Limit Value
Minimum Maximum Value
Inspection or Test
B3 Group
Steady-state Working Life
Final Test:
B4 Group
Visual Inspection Inside the Open Width
(Design Verification)
Bond Strength
B5 Group
Not Applicable
B6 Group
High-temperature Life||tt ||(Not working)
Final test:
Inspection or test
Group C1
Dimensions
Group C2
Thermal shock (glass stress)
Terminal strength
a. Detailed inspection
b. Rough leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test:
Group C3
Variable frequency vibration
Constant acceleration
Final test:
Group C4
Volume (when applicable)
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Continued Table 2
GJB128
V cs=20V,Pot=300mW
TA=25±3℃
Not allowed to add heat sink or forced air cooling to the deviceSee Table 4, steps 2 and 5
Visual inspection standard is as designed during identification
TA=200℃
See Table 4, steps 2 and 5
Table 3 Group C inspection
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4. Steps 1.3 and 4
See Table 4, steps 1, 3 and 4
One device per batch, 0 failure
20(C-0)
Limit value
Minimum value Maximum value
C5 grouping||tt| |Not applicable
C6 group
Inspection or test
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG111B, E
3DG111CF
Collector-base cut-off current
3DG111B.E
3DG111CF
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
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Continued Table 3
GJB128
TA=25±3CVca-20V
P t=300mW
Device heat sink or forced operation is not allowed
See Table 4, steps 2 and 5
Table 4 Final test for Group B and Group C
GB4587
Emitter-base open circuit
Vca=30V
VcB=50V
Emitter-base open circuit
VeB=30V
VcB=-50V
c=10mA
Ig=1mA
Ver=10V
Ic=10mA
Ver=10V
le=10mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5: Delivery preparation
Packing requirements shall comply with the provisions of GJB33.
6 Notes
The contract or order form shall specify the required terminal materials and coatings (see 3.2.1). 8
Limiting values
Minimum value Maximum value
Minimum value
Maximum value
Initial value
SJ20059—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test Circuit
Test circuit is shown in Figure A1.
Voltage Source
Collector-Emitter Breakdown Voltage Test Circuit Figure A1
A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the minimum limit value of V(BRCEO at the specified test current, the transistor is qualified. Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. Project code: B01018.C
3DG111E.F
Power gain
Groups A5, A6 and A7
Not applicable
Inspection or test
Group B1
Weldability
Durability of marking
Group B2
Thermal shock (heat cycle)
a. Fine leak detection
b. Coarse leak detection
Final test:
SJ20059—92
Continued Table 1
GB4587
TA=+ 150℃
Emitter-base open
VcB=30V
Vcg-50V
TA—-55C
Vca-10V
Ic10mA
Vc-10V,lg=0
Vcg=10V,lc=10mA
f100MHz
VcE-10V
f-30MHz
Table 2 Group B test
GJB128
See Table 4, steps 1, 3 and 4
TPE symbol
Limit value
Minimum value Maximum value
Inspection or test
B3 group
Steady-state working life
Final test:
B4 group
Open width internal visual inspection
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test:
Inspection or test
C Group 1
Dimensions
Group C2
Thermal shock (glass stress)
Terminal strength
a. Detailed inspection
b. Rough leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test:
Group C3
Variable frequency vibration
Constant acceleration
Final test:
Group C4
Gas distribution (when applicable)
SJ20059—92
Continued Table 2
GJB128
Vcs=20V,Pot=300mW
TA=25±3℃
Not allowed to add heat sink or forced air cooling to the deviceSee Table 4, steps 2 and 5
Visual inspection standard is as designed during identification
TA=200℃
See Table 4, steps 2 and 5
Table 3 Group C inspection
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4. Steps 1.3 and 4
See Table 4, steps 1, 3 and 4
One device per batch, 0 failures
20(C-0)
Limiting value
Minimum maximum value
C5 groupwwW.bzxz.Net
Not applicable
C6 group
Inspection or test
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG111B, E
3DG111CF
Collector-base cut-off Stop current
3DG111B.E
3DG111CF
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20059—92
Continued Table 3
GJB128
TA=25±3CVca-20V
Pt=300mW
Not allowed to add heat sink or force the device
See Table 4, steps 2 and 5
Table 4 Final test of Group B and Group C| |tt||GB4587
Emitter-base open circuit
Vca=30V
VcB=50V
Emitter-base open circuit
VeB=30V
VcB=-50V
c=10mA
Ig=1mA
Ver=10V
Ic=10mA
Ver=10V
le=10mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5: Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). 8
Limiting value
Minimum valueMaximum value
Minimum value
Maximum value
Initial value
SJ20059—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Collector-emitter breakdown voltage test circuit Figure A1
A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BRCEO), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. Project code: B01018.C
3DG111E.F
Power gain
Groups A5, A6 and A7
Not applicable
Inspection or test
Group B1
Weldability
Durability of marking
Group B2
Thermal shock (heat cycle)
a. Fine leak detection
b. Coarse leak detection
Final test:
SJ20059—92
Continued Table 1
GB4587
TA=+ 150℃
Emitter-base open
VcB=30V
Vcg-50V
TA—-55C
Vca-10V
Ic10mA
Vc-10V,lg=0
Vcg=10V,lc=10mA
f100MHz
VcE-10V
f-30MHz
Table 2 Group B test
GJB128
See Table 4, steps 1, 3 and 4
TPE symbol
Limit value
Minimum value Maximum value
Inspection or test
B3 group
Steady-state working life
Final test:
B4 group
Open width internal visual inspection
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test:
Inspection or test
C Group 1
Dimensions
Group C2
Thermal shock (glass stress)
Terminal strength
a. Detailed inspection
b. Rough leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test:
Group C3
Variable frequency vibration
Constant acceleration
Final test:
Group C4
Gas distribution (when applicable)
SJ20059—92
Continued Table 2
GJB128
Vcs=20V,Pot=300mW
TA=25±3℃
Not allowed to add heat sink or forced air cooling to the deviceSee Table 4, steps 2 and 5
Visual inspection standard is as designed during identification
TA=200℃
See Table 4, steps 2 and 5
Table 3 Group C inspection
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4. Steps 1.3 and 4
See Table 4, steps 1, 3 and 4
One device per batch, 0 failures
20(C-0)
Limiting value
Minimum maximum value
C5 group
Not applicable
C6 group
Inspection or test
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG111B, E
3DG111CF
Collector-base cut-off Stop current
3DG111B.E
3DG111CF
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20059—92
Continued Table 3
GJB128
TA=25±3CVca-20V
Pt=300mW
Not allowed to add heat sink or force the device
See Table 4, steps 2 and 5
Table 4 Final test of Group B and Group C| |tt||GB4587
Emitter-base open circuit
Vca=30V
VcB=50V
Emitter-base open circuit
VeB=30V
VcB=-50V
c=10mA
Ig=1mA
Ver=10V
Ic=10mA
Ver=10V
le=10mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5: Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). 8
Limiting value
Minimum valueMaximum value
Minimum value
Maximum value
Initial value
SJ20059—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Collector-emitter breakdown voltage test circuit Figure A1
A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BRCEO), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. Project code: B01018.Pot=300mW
TA=25±3℃
Not allowed to add heat sink or forced air cooling to the deviceSee Table 4, steps 2 and 5
Visual inspection standard is as designed during the appraisal
TA=200℃
See Table 4, steps 2 and 5
Table 3 Group C inspection
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4.Steps 1.3 and 4
See Table 4, steps 1, 3 and 4||tt| |One device per batch, 0 failures
20(C-0)
Limiting value
Minimum maximum value
C5 group
Not applicable
C6 group
Inspection or test
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG111B, E
3DG111CF
Collector-base cut-off current
3DG111 B.E
3DG111CF
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20059—92
Continued Table 3
GJB128
TA=25±3CVca-20V
Pt=300mW
Not allowed to add heat sink or force the device
See Table 4, steps 2 and 5
Final test of Group B and Group C in Table 4
GB 4587
Emitter-base open circuit
Vca=30V
VcB=50V
Emitter-base open circuit
VeB=30V
VcB=-50V
c=10mA
Ig=1mA
Ver=10V
Ic=10mA
Ver=10V
le=10mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5: Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). 8
Limiting value
Minimum valueMaximum value
Minimum value
Maximum value
Initial value
SJ20059—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Collector-emitter breakdown voltage test circuit Figure A1
A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BRCEO), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. Project code: B01018.Pot=300mW
TA=25±3℃
Not allowed to add heat sink or forced air cooling to the deviceSee Table 4, steps 2 and 5
Visual inspection standard is as designed during the appraisal
TA=200℃
See Table 4, steps 2 and 5
Table 3 Group C inspection
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4.Steps 1.3 and 4
See Table 4, steps 1, 3 and 4||tt| |One device per batch, 0 failures
20(C-0)
Limiting value
Minimum maximum value
C5 group
Not applicable
C6 group
Inspection or test
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG111B, E
3DG111CF
Collector-base cut-off current
3DG111 B.E
3DG111CF
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20059—92
Continued Table 3
GJB128
TA=25±3CVca-20V
Pt=300mW
Not allowed to add heat sink or force the device
See Table 4, steps 2 and 5
Final test of Group B and Group C in Table 4
GB 4587
Emitter-base open circuit
Vca=30V
VcB=50V
Emitter-base open circuit
VeB=30V
VcB=-50V
c=10mA
Ig=1mA
Ver=10V
Ic=10mA
Ver=10V
le=10mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5: Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
The required terminal materials and coatings shall be specified in the contract or order (see Section 3.2.1). 8
Limiting value
Minimum valueMaximum value
Minimum value
Maximum value
Initial value
SJ20059—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Collector-emitter breakdown voltage test circuit Figure A1
A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BRCEO), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. Project code: B01018.
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