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GB/T 15651.3-2003 Semiconductor discrete devices and integrated circuits Part 5-3: Test methods for optoelectronic devices

Basic Information

Standard ID: GB/T 15651.3-2003

Standard Name: Semiconductor discrete devices and integrated circuits Part 5-3: Test methods for optoelectronic devices

Chinese Name: 半导体分立器件和集成电路 第5-3部分:光电子器件 测试方法

Standard category:National Standard (GB)

state:in force

Date of Release2003-01-01

Date of Implementation:2004-08-01

standard classification number

Standard ICS number:Electronics>>31.260 Optoelectronics, Laser Equipment

Standard Classification Number:Electronic Components & Information Technology >> Optoelectronic Devices >> L50 Optoelectronic Device Combination

associated standards

Procurement status:IEC 60747-5-3:1997,IDT

Publication information

publishing house:China Standards Press

ISBN:155066.1-20664

Publication date:2004-08-01

other information

Release date:2003-11-24

Review date:2004-10-14

drafter:Chen Lan, Na Ren, Wang Shouhua

Drafting unit:Semiconductor Factory of Huayu Optics Valley Co., Ltd.

Focal point unit:National Semiconductor Device Standardization Technical Committee

Proposing unit:Ministry of Information Industry of the People's Republic of China

Publishing department:General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

competent authority:Ministry of Information Industry (Electronics)

Introduction to standards:

This part applies to test methods for optoelectronic devices, except for those used in optical fiber systems or subsystems. GB/T 15651.3-2003 Semiconductor discrete devices and integrated circuits Part 5-3: Test methods for optoelectronic devices GB/T15651.3-2003 Standard download decompression password: www.bzxz.net

Some standard content:

The planned structure of this series of standards is as follows: New Part: Photoelectric Devices Part 5: Photoelectric Devices: This part is in accordance with the standard for complete circuits and circuits: Part 5-3: Photoelectric Devices - Test Methods, GB/T *5551.3--2003/K 60747-5-3; 1997 This part is in accordance with the standard E6C74/-5-3, 1957 Part 5: Test Methods for Photoelectric Devices (Copyright © 2003-2003/K 60747-5-3; 1997 This part is in accordance with the standard E6C74/-5-3, 1957 Part 5: Test Methods for Photoelectric Devices (Copyright © 2003-2003/K 60747-5-3; 1997
has been omitted and the labor number is unified with that specified in G:199. The symbol for the hidden part is specified as ". For convenience, this part has made the following corrections in the column: "This part of 1EC3747 is accepted as the decimal point of this part" instead of the original decimal point "; t
has been added to the front of this international standard: All dosage forms have been added;
) In order to coordinate with the provisions of 1/1. ", the sub-clauses have been adjusted: 5..3 and 1d have been changed to \\\ ”:
)5,5.1.45.6..5 medium-based light current\modify\static micro\1h) fat 25 instructions\\change\"w"effective\\This part is recorded as an informative appendix.
This part is proposed by the Ministry of Information Industry of the People's Republic of China (CSIC), the originating unit of this part: Shan Yuguang Yang Co., Ltd., the main people in this part are: Chen, Naren Wang, China, publishing,
1 circle
GB/T15651.3 —2033/IE:E0747-5-3:1397 Semiconductor discrete devices and integrated circuits
Part 5-3: Optoelectronic devices
Test methods
Test methods for complementary parts or for optoelectronic devices, except for optical fiber systems or subsystems. 2 Indicative references
The following provisions of this part are incorporated by reference in this part of (/T161). Any subsequent revision of the dated referenced document (including the content of the sub-package) shall not apply Applicable to this part, however, for the purpose of this part of the station release agreement to study whether to follow the latest version of this document, from the date of the referenced document, the original version of the standard.
GH/2121-1999 Electrical and electronic products for environmental testing Part 1: General (:ctJ7t:501>68-1:148)EC0273198" same part of the distribution method
3 Light emitting device test method
3. Light emitting diode luminous intensity magic <「.)
3. 1. Purpose To measure the luminous intensity of a semiconductor light emitting diode. Method To measure the luminous intensity under eleven conditions: 1. Align the micromechanical axis of the light emitting diode to the minimum or maximum luminous intensity. 2. Align the optical axis of the optical detector with the optical material of the light emitting diode: 3. Position the light emitting diode according to the reference of the housing of the light emitting diode so as to achieve repeatable positioning: 3.1.2 Circuit diagram As shown in Figure 1. Circuit diagram GB/T 15651, 3—2003/TEC 6C747-5-3;t9973.1.3 Circuit description and requirements
Electrical source:
Measured light emitting diode: bzxz.net
Contains A surface for the fast light detector:
One pressure to eliminate the shrinkage of the light bar, not limiting the library: the measured light is very common.
In the light emitting device, the light sensitivity of the light emitting device should be adjusted to the standard of the international illumination. The light type meter (light control) can be slightly small. The product should be able to make the light source at the light bar I1 less than 1/3.s when the skin test is carried out. The current of the gas generator is within the range of the pulse width and repetition frequency of the electric cylinder. The rise time of the photoelectric detector is the actual torque ratio of the bottom of the product. It is a false test. 3.1.4 Test Procedure
According to the selected test state, position the LED to be tested and place it in the specified position and measure the luminance with a photoelectric detector. 3.1.5 Specified Conditions
Supplement the ambient humidity, maximum condition (applicable to printing)
Pass the current through the main body to run cleanly, and the duration is at a repetition rate of nearly 10 seconds); state 1, 2 or 3.
3.2 Radiant Intensity of Infrared Emitting Diode (I) 3.2.1
Measurement of the radiant intensity of semiconductor infrared emitting diodes. The filter method is suitable for the measurement of the radiant intensity under the following conditions: state 2
Write the diode around the center of the test tube and measure the maximum value and (or) the intensity. State 2
Align the optical axis of the optical test bench with the optical axis of the tube. 3.2.2 Circuit diagram
See Figure 2 for the circuit diagram.
Figure 2 Circuit diagram
3.2.3 Circuit description and requirements
Current source:
[>——-Infrared diode under test:
A temporary radiator, including the light compensation D classified as A.: GIl/T15651.3-7003/TFC 60747-5-3:1997D., -- used to eliminate the light barrier D, D. music should limit the three-dimensional and the same work of the measured diode L:
Lu month and the longer the detection (such as: the heat of the tube axis shop of the vehicle radiation intensity coal, the light rot T, set the minimum distance to: /sr as the unit of the auxiliary radiation meter to calibrate the size of the distance can be observed at the angle A/small ten when the infrared light source is observed at the optical property During the user test, the electric device should produce the required amplitude, and the self-flowing ball impulse of the reverse hair loan card should be calculated. The output should be small enough compared with the required impulse. It is a pulse test device. 3.2.4 Estimation procedure
According to the selected full test state, the diode will be tested: Apply the specified conditions in the new store 3.2.5 for the auxiliary radiation rise. The ambient temperature is not affected. When the atmospheric control conditions are applicable, " : Test "through flash positive current, duration and recovery rate (appropriate month) state: 2 or 3:
3.3 Value of emission full length (1,), spectral radiation bandwidth () and number of plants (.) 3.3.1
Measure the value of emission wavelength and spectral radiation bandwidth of the emitting device: Calculate the number of laser tubes according to the number 3.3.2 Circuit diagram
See the figure,
3.3.3 Circuit description and requirements Devices to be removed: Current source (pulse or DC); M---single variable: When appropriate, used to eliminate radiation: Vehicle package fence Single year This talk about the length of the resolution of the benefit of the heart wide product can provide sufficient reason for the measurement of the people 3 GR/T 15651.3--2003/EC:60747-5-3,1997 The optical response of the radiometer shall be calibrated and, for the purpose of indication, the drop in the curve shall be expressed as 1%. 3.3.4 If the transmission coefficient of the monochromator and the sensitivity of the radiometer are not within the required range, the three values ​​shall be modified. For the case of laser diodes, the incident power of the diode shall be kept as small as possible to ensure that the spectrum is not affected. 3.3.5 Test conditions 3.3.5.1 The peak emission wavelength of the light emitting diode or infrared emitting diode or single-ended laser diode shall be within the required range. The current, bandwidth and optical bandwidth of the sensing device shall be within the required range. The monochromator shall be adjusted to the required range. The radiometer shall reach the magnified reading and the corresponding peak wavelength shall be recorded (see Figure). 130%
Light-emitting diode short-circuit*
Figure 4 Relationship between emission power and wavelength
Then adjust the wavelength of the monochromator on both sides to half of the maximum value, record these two wave center values ​​(medical 4, benefit), which is the light emission bandwidth of the external emission device (see section 4, 3.3.5.2 Peak emission wavelength, spectral radiation bandwidth and longitudinal mode number of multi-mode laser diodes aj
The sample value emission wavelength of the multi-mode laser diode is given to the programmable device. The required current is used to make the light output reach the specified optical efficiency. Within the required length, the two monochromators are filtered to indicate the highest point of each peak compensation. The wavelength at the last point should be recorded, that is, the peak emission wavelength (see figure). The light emission band of the multi-laser tube is gradually adjusted from the single point to the full length. The method described in 3.3.2) is used to record the wavelength that reaches or passes the specified maximum output ratio. The monochromator has been gradually adjusted from short wave to long wave, and then 3.3.5 is repeated.2a) The method described above can be used to verify that the other drum length that exceeds the specified maximum shrinkage percentage is the difference between the two but is the light transmission bandwidth of the laser diode (see Figure 5).
Multi-beam microscope recognition model
After testing the light transmission bandwidth according to the method established in 3.3, 3.25>, the longitudinal 4 of the core vehicle within the empty width boundary is calculated
3.3.6 specified conditions
GB/T 15651.3—2003/IEC 60747-5-3:1997w
Photolysis resistance
Figure 5 Relationship between the radiated power and wavelength of a multi-slow laser diode:, FD and IRFD:
Environmental or heat sink humidity:
Specified inter-current (DC or pulsed)
For laser diodes,
Environmental or heat sink temperature;
Power or positive current
Ratio of peak power other than 5%):
3.4 ​​Length, width and image properties of the light emitting diode without pigtail 3.4.1 Purpose
The dimensions and image properties of the light emitting diode on the specified axis of the combustion disk are 3.4. 2 Measuring device
Circuit diagram 5
Figure 6 to measuring circuit diagram
GB/T15651,32003/5EE:60747-5-3,19973.4.3 Description and requirements of the device
(i--Electromagnetic source:
D--Measurement device
1.--Lens system:
SL Scanning photoelectric frequency detector with connection:
15- - A light source with a right source optic or a light source with an emission wavelength close to the wavelength of the device to be measured - a beam splitter or beam splitter.
3.4.4 Notes
In the entire cross-sectional area of ​​the light source LS and the device D, the transparent system 1. should be colorless. 3.4.5 Measurement process
a) The emission source LS is turned on and the two streams are sent to the system 1. The front view of the device is obtained on the detection SL> Source, system reads d: dynamic, value.
Adjust the device D to be viewed with the specified direct current function, or with the specified vehicle radiation times. The corresponding direct current is drawn along the long axis and the natural axis of the image, and the distance between the three points on the short axis of the light source and the magic light source is equal to
b) Home sensitive
Start the light source LS. Production section mirror system L: In the detector S The above-mentioned device 1 is connected to a collection function, and the image is collected before and after the combustion, and the values ​​of
and
are read and the scanning direction of the light detector is 51. The long axis and the long axis of the image are too accurate, and the lens system 1 is moved on the optical axis between the device and the light source. The length of the light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small. The light source is small.
3.4.E Specified conditions
Environmental, pipe filling or thermal resistance:
DC positive current or emission rate;
Line: major axis and minor axis
3.5 Light emitting device intensity angle and angle difference 3.5.1 The light emitting device is measured for radiation test time: see Figure 8 for details,
the blue light intensity is reduced to half of the emission intensity or equivalent intensity, the angle is determined in a certain period of time, called the surface determined by the layout.
The light between the state deviation layer and the mechanical shot. 3
CB/T 15651.3—2003/IEC 60747-5-3:1997 Drawing and drawing limit the machine reference plane of the device, which has corners and limits the orientation of the device on the surface. Figure? 3.5.2 Light distribution diagram: The light distribution diagram of the vehicle is defined as follows: Figure 9 Basic light distribution diagram GD/T15651.3—2003/kC60747-5-3:1997 3.5.3 Description of the display device and measurement components: IL Light detection device; 2 Axis - The mechanical light of the measurement component is determined by the P11 axis - the axis of the light detector or the center between the S and TD axes: The device and the photodiode are divided into a small volume angle determined by the engineer beforehand. When the three-dimensional half-potential measurement is obtained, the solid angle is considered to be very central.
The device under test shall be mounted on an optical surface that meets the following requirements:
The device D can be accurately positioned
When the position is changed, the center of the optical window of the device can be kept constant at the angle 6;
The device D can be rotated about the axis
A rotation angle relative to the axis can be measured.
3.5.4 Notes
Under consideration,
3. 5. 5 Test or Procedure
shall be applied to the device under test.
Align the axis of the device with the optical detector. (= center, filter the signal on the photodetector. Assume that 100%.
Return the tightness to the constant light intensity/. And the curve of \. The preferred coordinate form is drawn: when specified in the blank specification, other forms such as Cartesian coordinates may be used.
Half-intensity angle: is! /> The angle between two points. The angle difference is relative, and the angle between: 3.5.G specified conditions
Environment, tube porcelain or heat sink temperature logic,
Machine reference surface:
—angle,
Test method for photosensitive devices
4.1 Reverse current (1) or I () of photodiodes (including devices with or without fiber) under light irradiation and the collection of photodiodes under light radiation Electrode current (isn or Is)
4.1.1 Purpose
Measure the current of a photodiode (including devices with or without fiber) under irradiation with light and the current of a photodiode under irradiation with light
4.1.2 The maximum value shall be measured in one of the following conditions:
State 1
The device is rotated about its axis of expansion in order to determine the exact position of the maximum value;
State 2
The optical axis of the device is aligned with an optical base,
State 3
GB/T15651,3—2003/[EC60747-5-3,1997], in accordance with the standards specified in the type of device packaging structure, in order to obtain a mechanical positioning
State 4
The device is aligned with the thruster by a method of displacement. The optical ports of the device are connected to receive the data when the power is on, see Figure 10.
Monochromaticity
The device under test is shown in Figure 10. The test device is shown in Figures 11a and 11b.
National Phototransistor
4.1.4 Description and requirements of the test device (photodiode and photodiode in Figure 11h)
The device under test is fixed on the test socket. The test socket is installed on the optical base voltage that has been controlled (state: 2, 3 or 4): or installed on the calibrated device (state 3).
The light source should be any of the following:
a) A standard light source or pre-standard light source (not single) controlled by a standard light source, as well as a matching regulated power supply and a complete meter; or:
! Single Color light source, one of the following, in the device E described above, with a filter having a specified or known value of the transmission slope and the spectral radiation of any other system (monochromator, etc.). Confidentiality:
Any other component (e.g., light emitting tube or infrared emitter) with peak emission wavelength and bandwidth as specified by the standard,
GB/T15651.3—2003/1C60747-5-3:1907 Accessories with pigtail: Telecommunications 1> Soldered light source, 1.1.5 Precautions
-Avoid the light from causing overheating of the device under test, when the light exceeds 23W, it is recommended to install a heating plate as a quick \ in order to limit the duration of the light
Please verify the cleanliness of the optical surface:
Before using the light source diagnosis!
When the light source is used as a semi-power source, the light that can suppress the back-reflection should be placed in front of the device being illuminated. About the intensity of the light emitted by the device
4.1.6 Test procedure
Under the specified conditions.
The tube discharges the light source in the specified position (measurement) and the device is captured by the tube current drop, and the device is applied with a specified setting. For the condition of less than 2, 3 or 1, the device can read the minimum current value under the condition of damage to the seal. For the condition of 2, 3 or 1, the current value under the convex light is also read. 4.1.7 Specified case
Ring or other supplementary channel
The device under test is screened! , pulse) test method (not in accordance with the standard): standard light source (non-monochromatic) or wavelength and optical radiation width (monochromatic), about the optical fiber:
environment or tube competition data:
a test instrument to write the emergency:
enter the optical test port natural radiation power!
optical frequency will be plated length and optical radiation band.
4.2 Photodiode Ir and Phototransistor Dark Current ToIal, 4.2. 1 Purpose
Under certain conditions, measure the photoelectrode's ejection current and the dark current of the Nortel Pindar tube. 4.2.2 Circuit diagram
Middle area is Figure 12a, 2612.24
Figure 12a Dark current of photodiode "a time 10
Remaining 12h Photoelectric product year first
Collector-emitter current
Figure 12 Phototransistor emitter current Iwx
4.2.3 Cross-over description and requirements
Program system seat;
DUT.
4.2.4 Precautions | |tt||GB/T15651.3—2003/1EC60747-5-3:1997 The emitter-base dark current of 12d photoelectric tube has a certain relationship with the temperature. The measurement temperature is determined by the ambient temperature. It is necessary to record the light completely. Even if the light passes through the glass, it will also lead to the error of the measurement result. In the range of light potential, the device is slightly affected by the auxiliary radiation. 4. 2.5 Test or process
Under the specified conditions, completely avoid light, increase the voltage from zero to the minimum, and then measure the dark current. 4.2.6 Specified conditions
Environmental quality;
After adding the voltage:
Measure the V of the light source
Measure the V of the light source
Measure the V of the light source
4.3 The collector-emitter saturation voltage V of the photoelectric product 4.3.
Under the specified conditions, measure the collector-emitter saturation voltage and the voltage of the photoelectric tube 4.3.2 Circuit diagram
See Figure 13:
Figure 13 Circuit diagram
4.3.3 Electric running instructions and requirements
5—Total source,
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