This standard specifies the dimensions, technical requirements, inspection rules, packaging, storage and transportation of the MTS (MFS) series thyristor three-phase bridge module. This standard applies to three-phase bridge modules (hereinafter referred to as modules) consisting of six common thyristor cores or three common thyristor cores and three common rectifier cores. JB/T 7826.3-1996 MTS (MFS) series thyristor single-phase bridge module JB/T7826.3-1996 Standard download decompression password: www.bzxz.net

JB/T7826.3—1996
This standard is formulated to adapt to the production, development and application of thyristor modules and actively adopt international standards. The technical requirements and parameter indicators of this standard adopt the general level of similar foreign products. The setting of the inspection items of this standard is based on the performance requirements of thyristor modules, and refers to the national standard GB4940 "Ordinary Thyristors" and has made some additions and deletions.
The test methods adopted in this standard, in addition to JB/T7625-94 "Test Methods for Thyristor Modules", the test methods for discrete devices are implemented in accordance with GB4024 "Test Methods for Reverse Blocking Triode Thyristors of Semiconductor Devices". In order to ensure the product quality of thyristor modules, this standard stipulates that at least one batch of temperature change tests should be conducted every six months. Appendix A and Appendix B of this standard are both standard appendices. This standard is proposed and managed by the Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery Industry. The drafting units of this standard are: Yangzhou Siling Electronics Co., Ltd., Wuxi Radio Component Factory No. 5, Beijing Chunshu Rectifier Factory, Xiangfan Instrument Component Factory, and Fuxin Transistor Factory.
Drafters of this standard Sun Fumin Dai Yongxiang Guo Lanqiong Huang Yifu Dong Dayong Shi Jianxin Cha Manrong
Machinery Industry Standard of the People's Republic of China
MTS (MFS) series thyristor three-phase bridge module JB/T7826.31996
This standard specifies the dimensions, technical requirements, inspection rules, packaging, storage and transportation of the MTS (MFS) series thyristor three-phase bridge module.
This standard applies to three-phase bridge modules (hereinafter referred to as modules) composed of six ordinary thyristor cores or three ordinary thyristor cores and three ordinary rectifier cores.
2 Referenced Standards
The provisions contained in the following standards constitute the provisions of this standard through reference in this standard. When the standard is published, the versions shown are valid. All standards will be revised. Parties using this standard should explore the possibility of using the latest version of the following standards. 4938--85
JB/T2423-91
JB/T6306--92
JB/T7625—94
3 Form and size
Electrical connection type
Basic environmental test procedures for electrical and electronic products Test Db: Alternating damp heat test method Test method for reverse blocking triode thyristor of semiconductor device Mechanical and climatic test method for discrete semiconductor device Acceptance and reliability of discrete semiconductor device
Model naming method for power semiconductor device
Dimensions of power semiconductor module
Test method for thyristor module
Come come come
3.2 Model description
MT(F)
Approved by the Ministry of Machinery Industry in 1996-09-03
SX---XX
Come. Come.
VoRM (VRM) level
Average output current value (unit: A)
Three-phase bridge code (S) and serial number
Thyristor (thyristor and rectifier mixed) module
1997—01-01 implementation
3.3 Appearance dimensions
The appearance dimensions shall comply with 3.3 of JB/T6306. 4. Rated values ​​and characteristic values
4.1 Parameter level
JB/T7826.3—1996
4.1.1 The levels of off-state repetitive peak voltage (VDRM) and reverse repetitive peak voltage (VrRM) shall be as specified in Table 1 (voltage and current are the values ​​of a single tube core, the same below).
VDRM, VRX
VpRX, ViR3
The levels of critical rate of rise (di/dt) of on-state current shall be as specified in Table 2. 4.1.2
The levels of critical rate of rise (dv/dt) of off-state voltage shall be as specified in Table 3 Table 3
4.2 Rated values
The maximum rated values ​​(limit values) shall comply with those specified in Table 4 and shall apply to the entire operating temperature range.
On-state (forward
) average
(forward) surgebzxZ.net
Root mean current
ITcRMS)
On-state current
Critical
Rise rate
A, B, C
Gate average power
Off-state, reverse
Repetitive
Bump voltage
Off-state, reverse Non-repetitive bee
maximum voltage
A/μus
gate peak
value power torque
highest quality
characteristic values ​​shall comply with the provisions of Table 5
on-state forward
average current
Ir(Av)
characteristic curve
on-state forward
peak voltage
off-state, reverse||t t||Repetitive peak current
JB/T7826.3-1996
≤150
≤200
Given by the manufacturer
upper limit value
gate touch
current
≤150
≤200
gate touch
voltage
gate does not touch|| tt||Generation voltage
Off-state voltage
Critical rate of rise
Module junction
Shell thermal resistance
In the enterprise standard or product manual, at least the following characteristic curves of the module and the single tube core of the module should be given: a)
Derating curve of module base plate temperature and on-state average current; on-state volt-ampere characteristic curve,
Relationship curve of transient thermal resistance and time (on-state average current I
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