For details, please refer to this standard. GB/T 4728.5-2000 Graphical symbols for electrical schematics Part 5: Semiconductor tubes and electron tubes GB/T4728.5-2000 Standard download decompression password: www.bzxz.net

GB/T 4728. 52000
This standard is equivalent to the International Electrotechnical Commission standard IEC617-5:1996 "Graphical symbols for schematic diagrams Part 5: Semiconductor tubes and electron tubes".
This standard is a revision of GB/T4728.5--1985 "Graphic Symbols for Semiconductor Tubes and Electronic Tubes in Electrical Diagrams". Compared with GB/T4728.5--1985, this standard adds 10 symbols, including 05-05-18, 05-05-19, 05-05-20, 05-05-21, 05-06-09, 05-0916.05-11-04, 05-13-11, 05-13-12, and 05-14-03, deletes 122 symbols in GB/T4728.5--1985, and slightly changes the drawing methods of 15 symbols.
GB/T4728.5 is a part of the series standard "Graphic Symbols for Electrical Schematics". This series of standards includes the following parts:
GB/T 4728.1
General principles for graphic symbols for electrical diagrams
Graphic symbols for electrical schematics
GB/T 4728. 2
GB/T 4728. 3
GB/F 4728. 4
GB/T 4728. 5
GB/T 4728. 6
GB/T 4728. 7
GB/T 4728.8
Graphic symbols for electrical schematics
Graphic symbols for electrical schematics
Graphic symbols for electrical schematics
Graphic symbols for electrical schematics
Graphic symbols for electrical schematics
Graphic symbols for electrical diagrams
Part 2: Symbol elements, qualifiers and other commonly used symbols Part 3: Conductors and connectors
Part 4: Basic passive components
Part 5: Semiconductor tubes and electron tubes
Part 6: Generation and conversion of electrical energy
Part 7: Switches, control and protection devices Measuring instruments, lamps and signaling devices
GB/T 4728.9
Graphic symbols for electrical schematics Part 9: Telecommunications: switching and peripheral equipment GB/T 4728. 10
Graphic symbols for electrical schematics
Part 10: Telecommunications: Transmission
GB/T 4728. 11
Graphic symbols for electrical diagrams
: Power, lighting and telecommunications arrangements
GB/T 4728. 12
Graphic symbols for electrical schematics Part 12: Binary logic elements GB/T 4728.13
Graphic symbols for electrical schematics Part 13: Analog elements The scope and referenced standards of this series of standards can be found in IEC617-1. When revising GB/T4728.1-1985, it is intended to be equivalent to IEC617-1. Appendix B and Appendix C of IEC617-5:1996 are French and English indexes respectively, which are deleted in this standard. Appendix B of this standard contains symbols added to GB/T4728.5-1985 that are not included in IEC617-5 (1st edition). This standard replaces GB/T1728.5-1985 from the date of implementation. Both Appendix A and Appendix B of this standard are indicative appendices. This standard was proposed and coordinated by the National Technical Committee for Standardization of Electrical Documents and Graphic Symbols. This standard was drafted by the Mechanical Science Research Institute of the Ministry of Machinery Industry. The main drafters of this standard are: Guo Ting, Li Shilin, Gao Huimin, Wei Weiyanjun, Jiang Songbai, Xu Yunchi. This standard was first published in 1985
GB/T4728.5---2000
IEC Foreword
1) IEC (International Electrotechnical Commission) is a worldwide standardization organization including all national electrotechnical committees (IEC national committees). The international standards stipulated by EC are to promote international cooperation on various issues related to standards in the electrical and electronic fields. For this purpose and other activities, IEC also publishes international standards. The development of international standards is entrusted to technical committees. Any IEC national committee may participate in the development of standards if it is interested in the subject under study. International organizations, governmental and non-governmental organizations that have relations with IEC may also participate in the development of standards. IEC and ISO work closely under the conditions determined by the agreement between them. 2) IEC formal resolutions and agreements on technical issues are developed by technical committees in which national committees with special concerns participate, and express international consensus on the subjects involved as far as possible. 3) They are published in the form of standards, technical reports or guidelines and recommended for international use, and in this sense are accepted by national committees.
4) In order to promote international unification, IEC national committees undertake the task of applying IEC international standards to the greatest extent possible in their countries and regions. Any differences between IEC international standards and corresponding national or regional standards should be clearly indicated in the latter. International standard IEC617-5 was drafted by IEC Technical Committee 3A (Graphical Symbols for Diagrams) of IEC Technical Committee 3 (Documentation and Graphic Symbols).
This second edition repeals and replaces the first edition of 1983 and is technically revised. The text of this standard is based on the following documents:
Draft International Standard (FDIS)
3A/383/FDIS
Voting Full information on the promotion of this standard can be found in the voting report mentioned in the table above. Annex A, Annex B and Annex C are for reference only
Voting report
3A/421/RVD
GB/T 4728. 5---2000
IEC Introduction
This part of IEC617 forms a part of the series of graphic symbols for diagrams. The series consists of the following parts:
Part 1: General information, general index, comparison tablePart 2: Symbol elements, qualifiers and other commonly used symbolsPart 3: Conductors and connectors
Part 4: Basic passive components
Part 5: Semiconductors and electron tubes
Part 6: Generation and conversion of electrical energy
Part 7: Switches, control and protection devicesPart 8: Measuring instruments, lamps and signaling devicesPart 9: Telecommunications: switching and peripheral equipmentPart 10: Telecommunications: transmission
Part 11: Drawings and diagrams of architectural and surveying installationsPart 12: Binary logic elements
Part 13: Analog components
The scope and references of this series are shown in IEC617-1. The above symbols are designed according to the requirements of ISO11714-1* to be published. The module used is M2.5mm. In order to make the smaller symbols clearer, these symbols are enlarged by one time in this standard and marked with "200%\" in the symbol column; in order to save space, the larger symbols are reduced by one time and marked with "50%" in the symbol column. In order to facilitate the drawing of multiple terminals and meet other layout requirements, the size of the symbol (such as height) can be changed according to Article 7 of IS () 11714-1. Regardless of whether the size of the symbol is enlarged, reduced or corrected, the original line width is not corrected proportionally.
The symbol layout of this standard should make the distance between the connecting lines a multiple of a certain module. In order to facilitate the marking of the terminals, usually Select: 2M. For ease of understanding, symbols are drawn at a certain size and the same grid is used for all symbols. In computer-aided drawing systems, all symbols should be drawn within a grid that is reproduced on the background of the symbol. The old symbols included in Appendix A of the first edition of IEC617-5 have a transition period. This part is no longer included in the second edition and it will be made clear that they are no longer used.
The index of Appendix 1B and Appendix ( includes an alphabetical index of the symbol name and its number. The symbol name is based on the description of the symbol in this part, including the general index of the alphabetical order of the symbols of all parts given in IEC617-1. There is a previous.Still at the draft international standard stage (Document 3/563/DIS). 58
Elements of symbols
05-01-01
05-01-02
05-01-03
05-01-04
05-01-05
05-01-06
05-01-07
05-01-08
05-01-09
05-01-10
National Standard of the People's Republic of China
Graphical symbols for diagrams-Part 5 :Semiconductors and electron tubes
Graphical symbols for diagrams-Part 5 : tubes first article
Graphic symbols
Form 1
Form 2:
Form 3:
State Administration of Quality and Technical Supervision 2000-01-03 approved semiconductor devices
GB/T 4728.5—2000
idt IFC 617-5:1996
Replaces GB/T4728.5-1985
Semiconductor region with one ohmic contact
Vertical lines indicate semiconductor regions, horizontal lines indicate ohmic contactsSemiconductor region with multiple ohmic contacts
Example showing two ohmic contacts
Conductive channel of depletion-mode device
Conductive channel of enhancement-mode device
Rectifying junction
Moved to Appendix A:05-A1-01
A junction in which an electric field affects a semiconductor layer, for example in a junction field effect semiconductor tube
The P region affects the N layer
N zone affects P layer
2000-07-01 implementation
05-01-11
05-01-12
05-01-13
05-01-14
05-01-15||tt ||05-01-16
05-01-17
05-01-18
05-01-19
05-01-20
05-01-21
05-01-22
GB/T 4728.5—2000bzxz.net
Indicates the channel conductivity type of the insulated gate field effect semiconductor transistor (ICGFET)
N-type channel on a P-type substrate, showing a depletion-type IGFETP-type channel on an N-type substrate, showing an enhancement-type IGFETInsulated gate
For an example with multiple gates, see symbol 05-05-17Emitters on regions of different conductivity types
The slash with an arrow indicates the emitter
N region P-type emitter on
Several P-type emitters on N region
N-type emitter on P region
Several N-type emitters on P region
Collector on different conductivity type regions
Slashes indicate collector
Several collectors on different conductivity type regions
Transitions between different conductivity type regions, P to N, or N to PShort slashes indicate transition points along vertical lines from P to N, or from N to P. Ohmic contacts should not be drawn on short slashes to separate the intrinsic regions (region 1) of different conductivity type regions. The given PIN or NIP structure
The intrinsic region is located between the connected slashes. Any ohmic contact for zone 1 should be between the short slashes and should not be drawn on the short slashes
Intrinsic region between regions of the same conductivity type, the given PIN or NIN structure
05-01-23
05-01-24
Qualifying symbols unique to semiconductor devices
GB/T 4728.5--2000
Intrinsic region between a collector and a region of different conductivity type, the given PIN or NIP structure
Long slash indicates the collector
Intrinsic region between a collector and a region of the same conductivity type, the given PIP or NIN structure
Long slash indicates the collector
If necessary, a qualifying symbol can be added next to the device symbol or used as part of the symbol to indicate the special function or basic characteristics of the device in the circuit.
05-02-01
05-02-02
05-02-03
05-02-04
05-02-05
Example of Semiconductor Diode
05-03-01
05-03-02
05-03-03
Graphic Symbol
Schottky Effect
Tunnel Effect
Unidirectional Breakdown Effect
Zener Effect
Bidirectional Breakdown Effect
Reverse Effect (Single Tunnel Effect)|| tt||Semiconductor diode, general symbol
Light emitting diode (LED), general symbol
Thermosensitive diode
05-03-04
05-03-05
05-03-06
05-03-07
05-03-08
05-03-09
Thyristor example
05-04-01
05-04-02
05-04-03
05-04-04
GB/T 4728.5--2000
Varactor diode
Tunnel diode
Ezaki diode
Unidirectional breakdown diode
Voltage regulating diode
Zener diode
Graphic symbol
Bidirectional breakdown diode
Reverse diode (single tunnel diode)
Bidirectional diode
Reverse blocking diode thyristor
Reverse conducting diode thyristor
Bidirectional diode thyristor
Bidirectional switching diode
Triode thyristor without specified form
When it is not necessary to specify the type of control electrode, this symbol is used to indicate the reverse blocking triode thyristor serial number
05-04-05
05-04-06
05-04-07
05-04-08
05-04-09
05-04-10
05-04-11
05-04-12
05-04-13
05-04-14
GB/T 4728. 5 --2000
Graphic symbols
Reverse blocking triode thyristor, N-type control electrode (anode side controlled)
Reverse blocking triode thyristor, P-type control electrode (cathode side controlled)
Turn-off thyristor, unspecified control electrodeTurn-off triode thyristor, N-type control electrode (anode side controlled)
Turn-off triode thyristor, P-type control electrode (cathode side controlled)
Reverse blocking quadrupolar thyristor
Bidirectional triode thyristor
Triode bidirectional thyristor
Reverse conducting triode thyristor, unspecified Reverse conducting triode thyristor, N-type control electrode (anode side controlled)
Reverse conducting triode thyristor, P-type control electrode (cathode side controlled)
Examples of semiconductor tubes
05-05-01
05-05-02
05-05-03
05-05-04
05-05-05
05-05-06
05-05-07
05-05-08
05-0509
05-05-10
GB/T 4728.5—2000
Graphic symbols
PNP semiconductor tube
NPN semiconductor tube with collector connected to shell
NPN semiconductor tube with collapse resistance
Single junction semiconductor tube with P-type double base
Single junction semiconductor tube with N-type double base
NPN semiconductor tube with lateral bias basePNIP semiconductor tube with ohmic contact to intrinsic regionPNIN semiconductor tube with ohmic contact to intrinsic regionN-type channel junction field effect semiconductor tube
Gate and The source lead should be drawn on a straight line - drain
P-type channel junction field effect semiconductor tube
05-05-11
05-05-12
05-05-13
05-05-14
05-05-15
05-05~16
05-05-17
05-05-18
05-05-19
05-05-20
GB/T 4728. 5--2000
Insulated gate field effect semiconductor transistor (IGFET) Enhancement type, single gate, P-type channel, substrate, no lead wires. For example with multiple gates, see symbol 05-05-17 Insulated gate field effect semiconductor transistor (IGFET) Enhancement type, single gate, N-type channel, substrate, especially lead wires. Insulated gate field effect semiconductor transistor (IGFET) Enhancement type, single gate, P-type channel, substrate, with lead wires. Insulated gate field effect semiconductor transistor (IGFET) Enhancement type, single gate, N-type channel, substrate and source are internally connected
Insulated gate field effect semiconductor transistor (IGFET) Depletion type, single gate, N-type channel, substrate, no lead wires. Insulated gate field effect semiconductor transistor (IGFET) Depletion type, single gate, P-type channel, substrate, no lead wires. Insulated gate field effect semiconductor transistor (IGFET) Depletion type, single gate, P-type channel, substrate, no lead wires. Insulated gate field effect semiconductor transistor (IGFET) Depletion type, double gate, N-type channel, tree bottom, with lead wires. In the case of multiple gates, the main gate The lead wires of the source and the source should be drawn in a straight line
Insulated Gate Bipolar Transistor (IGBT)Enhancement type, P channelThe letters E, G and C represent the terminal names of the emitter, gate and collector respectively. If it does not cause confusion, the letters can be omittedInsulated Gate Bipolar Transistor (IGBT)
Enhancement type, N channel
Insulated Gate Bipolar Transistor (1GBT)
Depletion type, P channel||t t||05-05-21
Examples of photosensitive and magnetic sensitive devices
05-06-01
05-06-02
05-06-03
05-06-04
05-06-05
05-06-06
05-06-07
05-06-08
GB/T 4728.5-2000
Insulated Gate Bipolar Transistor (IGBT)
Depletion type, N-channel
Graphical symbol
Photoresistor
Photoconductor
Photoconductive device with symmetrical conductivity
Photodiode
Photoelectric device with asymmetrical conductivity
Photocell
Photosemiconductor tube, PNP type shown
Hall generator with four leads
Magnetic sensitive resistor, linear type shown
Magnetic coupling device
Magnetic isolator
Optocoupler
Optoisolator||tt ||Shows light emitting diodes and photoelectric semiconductor tubes 7
05-06-09
General symbol elements
05-07-01
05-07-02
05-07-03
05-07-04
05-07-05
05-07-06
05-07-07
05-07-08
05-07-09
05-07-10
Recommended form
Other forms
Recommended form
Other forms
GB/T 4728. 5-2000
Optically coupled device with light blocking groove, showing mechanical blocking Part II
Gas filled tube shell
Shell with outer shield
Conductive coating on inner surface of shell
Indirectly heated hot cathode
Directly heated hot cathode
Indirectly heated hot cathode hot wire (sub)
Thermocouple hot wire (sub)
Photocathode
Cold cathode
Ion heated cathode
Combined electrode symbol as anode and/or cold cathode Lead lines can be drawn horizontally. See symbol 05-14-02675-2000
Optical coupling device with light blocking groove, showing mechanical blocking Part II
Gas-filled tube shell
Shell with outer shield
Conductive coating on inner surface of shell
Indirectly heated hot cathode
Directly heated hot cathode
Indirectly heated hot cathode hot wire (sub)
Thermocouple hot wire (sub)
Photocathode
Cold cathode
Ion heated cathode
Combined electrode symbol as anode and/or cold cathode Lead lines can be drawn horizontally. See symbol 05-14-02675-2000
Optical coupling device with light blocking groove, showing mechanical blocking Part II
Gas-filled tube shell
Shell with outer shield
Conductive coating on inner surface of shell
Indirectly heated hot cathode
Directly heated hot cathode
Indirectly heated hot cathode hot wire (sub)
Thermocouple hot wire (sub)
Photocathode
Cold cathode
Ion heated cathode
Combined electrode symbol as anode and/or cold cathode Lead lines can be drawn horizontally. See symbol 05-14-0267
Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.