This standard specifies the detailed requirements for CS1 type silicon channel junction field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Discrete Semiconductor Devices". SJ 20011-1992 Semiconductor Discrete Devices GP, GT and GCT Levels CS1 Type Silicon N-Channel Depletion Type Field Effect Transistor Detailed Specification SJ20011-1992 Standard Download Decompression Password: www.bzxz.net
This standard specifies the detailed requirements for CS1 type silicon channel junction field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Discrete Semiconductor Devices".

GB 4586-1984 Test methods for field effect transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices

Military Standard for Electronic Industry of the People's Republic of China FL5961
Semiconductor discrete device
GP, GT and GCT grade
SJ20011—92
CS1, CS4, CS10 type silicon N-channel
depletion mode field effect transistor
Detailed specification
Semiconductor discrete deviceDetail specification for silicon N-channeldeplition mode fieldeffect transistor of types CS1,CS4.CS10GP,GTandGCTclasses
1992-02-01Issued
China Electronics Industry Corporation
1992-05-01Implemented
1Scope
People's Republic of China Electronics Industry Military Standard Semiconductor discrete devices
GP, GT and GCT classes
CS1 Type Silicon N-channel deplition mode field-effect transistor Detailed specification
Semiconductor discrete deviceDetailed specification for silicon N-channel deplition mode field-effect transistor of type CsGP.GT and GCT classes
1.1 Subject content
SJ20011---92
This specification specifies the detailed requirements for CS1 type silicon N-channel junction field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GPGT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Discrete Semiconductor Devices".
China Electronics Industry Corporation Issued on February 1, 1992, implemented on May 1, 1992
1.2 Dimensions
SJ2001192
The dimensions should comply with A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1.
1.3 Maximum Rated Values
TA=25C
.35@x@
Figure 1 Dimensions
Note: 1) When T>25℃, derate linearly at a rate of 0.66mW/C. -2
Terminal polarity:
Unit: mm
A3-01B
Tamh and Tate
-55~+175
1.4 Main electrical properties (T=25℃)
Symbol (unit)
Ipss(mA)
Vos(efn(V)
F2)(dB)
lyal(μs)
Ci(pF)
C h(pF)
Test conditions
Vns=-10V
Vps10V
Vps=-10V
f=1kHz
Rc-1M0
Vps10V
f-1MHz
Vps=-10V
f-IMHz
Vps=10V
f=1MHz
Note: 1) Pulse method (see 4.5.1).
2) A gear, test under Vgs=0 condition.
2 Reference documents
SJ20011--92
All models
All models
All models
GB4586-84
Test methods for field effect transistors
GB7581-87
GJB33-85
GJB128-86
Dimensions of discrete semiconductor devices
General specification for discrete semiconductor devices
Test methods for discrete semiconductor devices
Minimum value
Maximum value
3 Requirements
3.1 Detailed requirements
SJ20011--92
All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design structure and dimensions
The design structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating
The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or tin. When the terminal material and coating are required to be selected or otherwise required, they shall be clearly specified in the contract or order (see 6) 3.3 Marking
The marking of the device shall comply with the provisions of GJB33.
4 Quality assurance provisions
4.1 Sampling and inspection
Sampling and inspection shall comply with the provisions of GJB33 and this specification. 4.2 Qualification inspection
Qualification inspection shall comply with the provisions of G.B33.
4.3 Screening (for GT and GCT grades only)
Screening shall comply with Table 2 of GJB33 and this specification. The following tests shall be performed in accordance with Table 1 of this specification and devices exceeding the specified limit values ​​shall not be accepted.
GJB33 Table 2
3. Thermal shock
6. High temperature reverse bias
7. Intermediate test
8. Electrical aging
9. Final test
4.3.1 Power aging conditions
GT and GCT level
Test or experiment
The low temperature should be -55℃, and the high temperature should be +175℃. Not required
Not required
IGsS, ss and|y|1
Group A2 in Table 1 of this specification;
AIpss=±10% of the initial value, △/yal1=±20% of the initial value VGs--24V:Vs=0,TA=-150℃
4.4 Quality consistency inspection
Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A inspection
Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B inspection
Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification.
4.4.3 Group C inspection
SJ20011-92
Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions. 4.5.1 Pulse test
The pulse test shall be in accordance with the provisions of 3.3.2.1 of GJB128. Table 1 Inspection of Group A
Inspection or test
Group A1
Appearance and mechanical inspection
Group A2
Gate-source breakdown voltage
Gate-source cut-off current
Zero gate voltage drain current
Gate-source cut-off voltage
Group A3
High temperature operation:
Gate-source cut-off current
GJB128
GB4586
Drain-source short circuit
IGs-lμA
Drain-source short circuit
VGs=-10V
Gate-source short circuit
Vps=10V
Pulse method (see 4.5.1)
Vrg10V
Ips iμA
T=125℃
Drain-source short circuit
Vps-0.Vcs--10
V(BR)SS
Vcs(ert)
Limit value
Minimum value
Maximum value
Inspection or test
A4 group
Small signal common-source short circuit
Forward transconductance
Small signal common-source short circuit
Input capacitance
Small signal Common source short circuitbzxz.net
Reverse collapse capacitance
Common source point noise coefficient
Group A5 and A6
Not applicable
Group A7
Low temperature operation:
Small signal common source short circuit
Forward transconductance
SJ20011-92
Continued Table 1 Group A test
GB4586
Vns-15V
f-1kHz
Pulse method (see 4.5.1)
Vps=10V
f-1MHz
Vog10V
Vrs10V
f=1kHz
Re-1MO
A range: Vas=0
B, C, D range:
Tm=-55℃
Vns10V
Pulse method (see 4.5.1)
LTPD symbol
Limit value
Minimum value
Maximum value
Inspection or test
Group B1
Solderability
Durability of marking
Group B2
Thermal shock (temperature cycle)
a. Detailed inspection
b. Rough leak detection
Final test:
Group B3
Steady-state working life
(high temperature reverse bias)
Max Post-test:
B4 group
Open cap internal inspection
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test
SJ2001192
Table 2B group inspection
GJB128
Test condition C, but temperature Should be
T=-55℃
T=+175℃
See Table 4, steps 1, 3 and 4
TA-150℃
VGs=-24V
See Table 4, steps 2, 3, 4, 5 and 6
Test condition A
All internal leads of each device
are subjected to tensile test separately
TA=175℃
See Table 4, steps 2 and 6.
One device per batch, 0 failure
20(C-0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Coarse leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C4 group||t t||(When required)
C5 group
Not applicable
C6 group
Steady-state working life
(High temperature reverse bias)
Final test
SJ20011—92
Table 3 Group C test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA-150℃
VGs=-24V
See Table 4, step 2 , 3, 4, 5 and 6
In=10
Gate-source cut-off current
Gate-source cut-off current
Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
SJ20011—92
Table 4. Final test of group B and group C
GB4586
Drain-source short circuit
VGs=-10V
Drain-source short circuit
Vcs—-10V
Gate-source short circuit
Vns=10V
Pulse method (see 4.5.1)
Vps=10V
Pulse method (see 4.5.1)
Gate-source short circuit
Vps10V
Pulse method (see 4.5.1)
Vns-10V
f=1kHz
Pulse method (see 4.5.1)
Minimum value
Maximum value
Initial value±15%
Initial value±25%
5 Delivery preparation
Packing requirements should be in accordance with the provisions of GJB33.
Notes
SJ20011--92
The contract or order form shall specify the required terminal materials and coatings (see 3.2.1). If the user unit requires, the typical characteristic curve can be specified in the contract or order form. CS1 and factory model 3DJ6 comparison:
Additional instructions:
3DJ6G, H
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Hao Zhilong, Liu Meiying, Zhang Zongguo. Project code: B91017.Final test for Group B and Group C
GB4586
Drain-source short circuit
VGs=-10V
Drain-source short circuit
Vcs—-10V
Gate-source short circuit
Vns=10V
Pulse method (see 4.5.1)
Vps=10V
Pulse method (see 4.5.1)
Gate-source short circuit
Vps10V
Pulse method (see 4.5.1)
Vns-10V
f=1kHz
Pulse method (see 4.5.1)
Minimum value
Maximum value
Initial value ±15%
Initial value ±25%
5 Delivery preparation
Packing requirements shall comply with the provisions of GJB33.
Notes
SJ20011--92
The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). If the user unit requires, the typical characteristic curve can be specified in the contract or order form. CS1 and factory model 3DJ6 comparison:
Additional instructions:
3DJ6G, H
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification are: Wang Changfu, Hao Zhilong, Liu Meiying, Zhang Zongguo. Project code: B91017.Final test for Group B and Group C
GB4586
Drain-source short circuit
VGs=-10V
Drain-source short circuit
Vcs—-10V
Gate-source short circuit
Vns=10V
Pulse method (see 4.5.1)
Vps=10V
Pulse method (see 4.5.1)
Gate-source short circuit
Vps10V
Pulse method (see 4.5.1)
Vns-10V
f=1kHz
Pulse method (see 4.5.1)
Minimum value
Maximum value
Initial value ±15%
Initial value ±25%
5 Delivery preparation
Packing requirements shall comply with the provisions of GJB33.
Notes
SJ20011--92
The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). If the user unit requires, the typical characteristic curve can be specified in the contract or order form. CS1 and factory model 3DJ6 comparison:
Additional instructions:
3DJ6G, H
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification are: Wang Changfu, Hao Zhilong, Liu Meiying, Zhang Zongguo. Project code: B91017.
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