This specification specifies the detailed requirements for CS10 type silicon N-channel junction field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Discrete Semiconductor Devices". SJ 20013-1992 Semiconductor Discrete Devices GP, GT and GCT Level CS10 Type Silicon N-channel Depletion Type Field Effect Transistor Detailed Specification SJ20013-1992 Standard download decompression password: www.bzxz.net
This specification specifies the detailed requirements for CS10 type silicon N-channel junction field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Discrete Semiconductor Devices".

GB 4586-1984 Test methods for field effect transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices

1 Scope
People's Republic of China Electronic Industry Military Standard Semiconductor discrete devices
GP, GT and GCT classes
Semiconductor discrete deviceDetail specification for silicon N-channel deplition mode field-effect transistor of type Cs1oGP, GT and GCT classes
1.1 Subject content
SJ20013-92
This specification specifies the detailed requirements for CS1O type silicon N-channel junction field-effect transistor (hereinafter referred to as device). This type of device provides three levels of product assurance (GP, GT and GCT classes) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices".
China Electronics Industry Corporation Issued on February 1, 1992, implemented on May 1, 1992
1.2 Dimensions
SJ20013—92
The dimensions should conform to A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1:
1.3 Maximum Rated Values
TA=25℃
Terminal Polarity:
0.35x?
Dimensions in Figure 1
Note: 1) When T>25℃, derate linearly at a rate of 0.66mW/℃. Symbol
Unit: mm
A3-01B
Tam and T
—55~+175
1.4 Main electrical characteristics (T^25℃)
Symbol (unit)
Ipsst (mA)
Vcs (at (V)
V.2 (nV/ /Hz)
V.2)(nV//Hz)
lyal）(μs)
Cm(pF)
Test conditions
Vps10v
Vps10v
Ip=μA
Vos=10v
f-10Hz
Vs=10V
f-1kHz
Vrs=10V
f=1kHz
Vns=10V
f-1MHz
Vps10v
f=1MHz
Note: 1) Pulse method (see 4.5.1).
2) A gear, test under Vs=0 condition.
2 Reference documents
GB4586—84
GB7581--87
SJ20013--92
Other models
All models
All models
All models
All models
Test methods for field effect transistors
Dimensions of discrete semiconductor devices
Minimum value
Maximum value
GJB33—85
GJB128--86
3 Requirements
3.1 Detailed requirements
SJ20013-92
General specification for discrete semiconductor devices
Test methods for discrete semiconductor devices
All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design structure and dimensions
The design structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating
The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or immersion tin. When the terminal material and coating are required to be selected or otherwise required, they shall be clearly specified in the contract or order (see 6). 3.3 Marking
The marking of the device shall comply with the provisions of GJB33.
4 Quality assurance provisions
4.1 Sampling and inspection
Sampling and inspection shall comply with the provisions of GJB33 and this specification. 4.2 Qualification inspection
Qualification inspection shall comply with the provisions of GJB33.
4.3 Screening (for GT and GCT grades only)
Screening shall comply with Table 2 of GJB33 and this specification. The following tests shall be performed in accordance with Table 1 of this specification and devices exceeding the specified limit values ​​shall not be accepted.
GJB33 Table 2
3. Thermal shock
6. High temperature reverse bias
7. Intermediate test
8. Electrical aging
9. Final test
4.3.1 Power aging conditions
Test or experiment
GT and GCT grade
The low temperature should be -55℃, and the high temperature should be +175℃. Not required
Not required
Ics1, Ipss and y
Group A2 in Table 1 of this specification;
AIpss-10% of the initial value;
Vcs—20V:Vns=0;
;TA=150℃
4.4 Quality consistency inspection
The quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A test
A/l-initial value ±20%
SJ20013-92
Group A test shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B test
Group B test shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the change amount (A) requirements shall be carried out in accordance with the steps of Table 4 of this specification.
4.4.3 Group C test
Group C test shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification.
4.5 Test and test methods
The test and test methods shall be in accordance with the corresponding tables of this specification and the following provisions. 4.5.1 Pulse test
The pulse test shall be in accordance with the provisions of 3.3.2.1 of GJB128. Table 1 Inspection of Group A
Inspection or test
Group A1
Appearance and mechanism inspection
Group A2
Gate-source breakdown voltage
Gate-source cut-off current
Zero gate voltage threshold current
Gate-source cut-off voltage
GJB128
GB4586
Drain-source short circuit
IGs-lμA
Drain-source short circuit
VGs--10V
Gate-source short circuit
Vps=10V
Pulse method (see 4.5.1)
Vps=10V
Ips=luA
V(BR)GSS
Vescoft)
Limit value
Minimum maximum value
Inspection or test
Group A3
High temperature operation:
Gate-source cutoff current
Group A4
Small signal common source short circuit
Forward transconductance
Small signal common source short circuit
Input capacitance||tt ||Small signal common source short circuit
Feedback capacitance
Equivalent input noise voltage
A5 and A6 public groups
Not applicable
A7 group
Low temperature operation:
Small signal common source short circuit
Forward transconductance
SJ20013-—92
Continued Table 1 Group A test
GB4586
Tamb=125℃
Drain-source short circuit
VGs=-10V
Vps=10V||t t||f-1kHz
Pulse method (see 4.5.1)
Vps=10V
f=1MHz
Vpg10V
f-1MHz
Vps=10V
Ip=0.3mA\)
f-10Hz
Vps=10V
f=1kHz
Tamb--55℃
Vps-10V,
f=1kHz
Pulse method (see 4.5.1)
Limit value
Minimum value
Maximum value
80hV/VHz
30hV//Hz
Inspection or test
GB4586
Note: 1) A gear, tested under the condition of VGs=0. Inspection or test
B1 group
Solderability
Durability of marking
B2 group
Thermal shock (temperature cycle)
a. Fine leak detection
b. Rough leak detection
Final test
B3 group
Steady-state working life
(High temperature reverse bias)
Final test
B4 group
Open cap internal inspection
(Design verification)
Bond strength
SJ20013—9 2
Table 2 Group B test
GJB128
Test condition C, but the temperature should be
TA---55℃
T+175℃
See Table 4, steps 1, 3 and 4
TA=150℃
TGs—-20V
See Table 4, steps 2, 3, 4, 5 and 6
Test condition A
All internal leads of each device
are subjected to tensile test
Limit value
Minimum value||tt ||Maximum value
1 device per batch, 0 failure
20(C=0)
Inspection or test
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Fine leak detection
b. Coarse leak detection||t t||Combined temperature/humidity
Cyclic test
Appearance and mechanical inspection
Final test
Group C3
Variable frequency vibration
Constant acceleration
Final test
Group C4
(When required)
Not applicable
Group C5
SJ20013-92
Continued Table 2 Group B Inspection
GJB128
TA-175℃
See Table 4, steps 2 and 6.
Table 3 Group C Test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
Test or test
Group C6
Steady-state working life
(high temperature reverse bias)bZxz.net
Final test:
Gate-source cut-off current
Gate-source cut-off current||t t||Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
SJ20013--92
Continued Table 3 Group C test
GJB128
TA=150℃
VGs--20V
See Table 4, steps 2, 3, 4, 5 and 6
Table 4 Final test of Group B and Group C
GB4586
Drain-source short circuit
Ves =-10V
Surge source short circuit
VGs-—10V
Gate source short circuit
Vps=10V
Pulse method (see 4.5.1)
Vps=10V
f-1kHz
Pulse method (see 4.5.1)
Enter—10
Limit value
Minimum value
Maximum value
Zero gate voltage drain current
Small signal common source Short circuit
Forward transconductance
5 Delivery preparation
SJ20013—92
Continued Table 4 Final test of Group B and Group C
GB4586
Gate-source short circuit
Vrs=10V
Pulse method (see 4.5.1)
Vps-10V
f=1kHz
Pulse method (see 4.5.1)
Packing requirements shall comply with the provisions of GJB33.
6 Notes
A/ytah
The required terminal material and coating shall be specified in the contract or order (see 3.2.1). If required by the user, the typical characteristic curve may be specified in the contract or order. Comparison between CS10 and factory model 3DJ4:
Additional notes:
3DJ4G, H
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Wu Zhilong, Zhang Zongguo, Liu Meiying. Project code: B91019.
Minimum value
Maximum value
Tax 15% of the initial value
Tax 25% of the initial valueRough leak detection
Comprehensive temperature/humidity
Cyclic test
Appearance and mechanical inspection
Final test
Group C3
Variable frequency vibration
Constant acceleration
Final test
Group C4
(When required)
Not applicable
Group C5
SJ20013-92
Continued Table 2 Group B inspection
GJB128
TA-175℃
See Table 4, steps 2 and 6.
Table 3 Group C Test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
Test or test
Group C6
Steady-state working life
(high temperature reverse bias)
Final test:
Gate-source cut-off current
Gate-source cut-off current||t t||Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
SJ20013--92
Continued Table 3 Group C test
GJB128
TA=150℃
VGs--20V
See Table 4, steps 2, 3, 4, 5 and 6
Table 4 Final test of Group B and Group C
GB4586
Drain-source short circuit
Ves =-10V
Surge source short circuit
VGs-—10V
Gate source short circuit
Vps=10V
Pulse method (see 4.5.1)
Vps=10V
f-1kHz
Pulse method (see 4.5.1)
Enter—10
Limit value
Minimum value
Maximum value
Zero gate voltage drain current
Small signal common source Short circuit
Forward transconductance
5 Delivery preparation
SJ20013—92
Continued Table 4 Final test of Group B and Group C
GB4586
Gate-source short circuit
Vrs=10V
Pulse method (see 4.5.1)
Vps-10V
f=1kHz
Pulse method (see 4.5.1)
Packing requirements shall comply with the provisions of GJB33.
6 Notes
A/ytah
The required terminal material and coating shall be specified in the contract or order (see 3.2.1). If required by the user, the typical characteristic curve may be specified in the contract or order. Comparison between CS10 and factory model 3DJ4:
Additional notes:
3DJ4G, H
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Wu Zhilong, Zhang Zongguo, Liu Meiying. Project code: B91019.
Minimum value
Maximum value
Tax 15% of the initial value
Tax 25% of the initial valueRough leak detection
Comprehensive temperature/humidity
Cyclic test
Appearance and mechanical inspection
Final test
Group C3
Variable frequency vibration
Constant acceleration
Final test
Group C4
(When required)
Not applicable
Group C5
SJ20013-92
Continued Table 2 Group B inspection
GJB128
TA-175℃
See Table 4, steps 2 and 6.
Table 3 Group C Test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
Test or test
Group C6
Steady-state working life
(high temperature reverse bias)
Final test:
Gate-source cut-off current
Gate-source cut-off current||t t||Zero gate voltage drain current
Small signal common source short circuit
Forward transconductance
SJ20013--92
Continued Table 3 Group C test
GJB128
TA=150℃
VGs--20V
See Table 4, steps 2, 3, 4, 5 and 6
Table 4 Final test of Group B and Group C
GB4586
Drain-source short circuit
Ves =-10V
Surge source short circuit
VGs-—10V
Gate source short circuit
Vps=10V
Pulse method (see 4.5.1)
Vps=10V
f-1kHz
Pulse method (see 4.5.1)
Enter—10
Limit value
Minimum value
Maximum value
Zero gate voltage drain current
Small signal common source Short circuit
Forward transconductance
5 Delivery preparation
SJ20013—92
Continued Table 4 Final test of Group B and Group C
GB4586
Gate-source short circuit
Vrs=10V
Pulse method (see 4.5.1)
Vps-10V
f=1kHz
Pulse method (see 4.5.1)
Packing requirements shall comply with the provisions of GJB33.
6 Notes
A/ytah
The required terminal material and coating shall be specified in the contract or order (see 3.2.1). If required by the user, the typical characteristic curve may be specified in the contract or order. Comparison between CS10 and factory model 3DJ4:
Additional notes:
3DJ4G, H
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Wu Zhilong, Zhang Zongguo, Liu Meiying. Project code: B91019.
Minimum value
Maximum value
Tax 15% of the initial value
Tax 25% of the initial value
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