title>Semiconductor discrete device-Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS10 GP,GT and GCT classes - SJ 20013-1992 - Chinese standardNet - bzxz.net
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Semiconductor discrete device-Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS10 GP,GT and GCT classes
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Standard ID:
SJ 20013-1992
Standard Name:Semiconductor discrete device-Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS10 GP,GT and GCT classes
This specification specifies the detailed requirements for CS10 type silicon N-channel junction field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Discrete Semiconductor Devices". SJ 20013-1992 Semiconductor Discrete Devices GP, GT and GCT Level CS10 Type Silicon N-channel Depletion Type Field Effect Transistor Detailed Specification SJ20013-1992 Standard download decompression password: www.bzxz.net
This specification specifies the detailed requirements for CS10 type silicon N-channel junction field effect transistors (hereinafter referred to as devices). This type of device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Discrete Semiconductor Devices".
GB 4586-1984 Test methods for field effect transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices
Some standard content:
1 Scope People's Republic of China Electronic Industry Military Standard Semiconductor discrete devices GP, GT and GCT classes Semiconductor discrete deviceDetail specification for silicon N-channel deplition mode field-effect transistor of type Cs1oGP, GT and GCT classes 1.1 Subject content SJ20013-92 This specification specifies the detailed requirements for CS1O type silicon N-channel junction field-effect transistor (hereinafter referred to as device). This type of device provides three levels of product assurance (GP, GT and GCT classes) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices". China Electronics Industry Corporation Issued on February 1, 1992, implemented on May 1, 1992 1.2 Dimensions SJ20013—92 The dimensions should conform to A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1: 1.3 Maximum Rated Values TA=25℃ Terminal Polarity: 0.35x? Dimensions in Figure 1 Note: 1) When T>25℃, derate linearly at a rate of 0.66mW/℃. Symbol Unit: mm A3-01B Tam and T —55~+175 1.4 Main electrical characteristics (T^25℃) Symbol (unit) Ipsst (mA) Vcs (at (V) V.2 (nV/ /Hz) V.2)(nV//Hz) lyal)(μs) Cm(pF) Test conditions Vps10v Vps10v Ip=μA Vos=10v f-10Hz Vs=10V f-1kHz Vrs=10V f=1kHz Vns=10V f-1MHz Vps10v f=1MHz Note: 1) Pulse method (see 4.5.1). 2) A gear, test under Vs=0 condition. 2 Reference documents GB4586—84 GB7581--87 SJ20013--92 Other models All models All models All models All models Test methods for field effect transistors Dimensions of discrete semiconductor devices Minimum value Maximum value GJB33—85 GJB128--86 3 Requirements 3.1 Detailed requirements SJ20013-92 General specification for discrete semiconductor devices Test methods for discrete semiconductor devices All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design structure and dimensions The design structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or immersion tin. When the terminal material and coating are required to be selected or otherwise required, they shall be clearly specified in the contract or order (see 6). 3.3 Marking The marking of the device shall comply with the provisions of GJB33. 4 Quality assurance provisions 4.1 Sampling and inspection Sampling and inspection shall comply with the provisions of GJB33 and this specification. 4.2 Qualification inspection Qualification inspection shall comply with the provisions of GJB33. 4.3 Screening (for GT and GCT grades only) Screening shall comply with Table 2 of GJB33 and this specification. The following tests shall be performed in accordance with Table 1 of this specification and devices exceeding the specified limit values shall not be accepted. GJB33 Table 2 3. Thermal shock 6. High temperature reverse bias 7. Intermediate test 8. Electrical aging 9. Final test 4.3.1 Power aging conditions Test or experiment GT and GCT grade The low temperature should be -55℃, and the high temperature should be +175℃. Not required Not required Ics1, Ipss and y Group A2 in Table 1 of this specification; AIpss-10% of the initial value; Vcs—20V:Vns=0; ;TA=150℃ 4.4 Quality consistency inspection The quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A test A/l-initial value ±20% SJ20013-92 Group A test shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B test Group B test shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the change amount (A) requirements shall be carried out in accordance with the steps of Table 4 of this specification. 4.4.3 Group C test Group C test shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification. 4.5 Test and test methods The test and test methods shall be in accordance with the corresponding tables of this specification and the following provisions. 4.5.1 Pulse test The pulse test shall be in accordance with the provisions of 3.3.2.1 of GJB128. Table 1 Inspection of Group A Inspection or test Group A1 Appearance and mechanism inspection Group A2 Gate-source breakdown voltage Gate-source cut-off current Zero gate voltage threshold current Gate-source cut-off voltage GJB128 GB4586 Drain-source short circuit IGs-lμA Drain-source short circuit VGs--10V Gate-source short circuit Vps=10V Pulse method (see 4.5.1) Vps=10V Ips=luA V(BR)GSS Vescoft) Limit value Minimum maximum value Inspection or test Group A3 High temperature operation: Gate-source cutoff current Group A4 Small signal common source short circuit Forward transconductance Small signal common source short circuit Input capacitance||tt ||Small signal common source short circuit Feedback capacitance Equivalent input noise voltage A5 and A6 public groups Not applicable A7 group Low temperature operation: Small signal common source short circuit Forward transconductance SJ20013-—92 Continued Table 1 Group A test GB4586 Tamb=125℃ Drain-source short circuit VGs=-10V Vps=10V||t t||f-1kHz Pulse method (see 4.5.1) Vps=10V f=1MHz Vpg10V f-1MHz Vps=10V Ip=0.3mA\) f-10Hz Vps=10V f=1kHz Tamb--55℃ Vps-10V, f=1kHz Pulse method (see 4.5.1) Limit value Minimum value Maximum value 80hV/VHz 30hV//Hz Inspection or test GB4586 Note: 1) A gear, tested under the condition of VGs=0. Inspection or test B1 group Solderability Durability of marking B2 group Thermal shock (temperature cycle) a. Fine leak detection b. Rough leak detection Final test B3 group Steady-state working life (High temperature reverse bias) Final test B4 group Open cap internal inspection (Design verification) Bond strength SJ20013—9 2 Table 2 Group B test GJB128 Test condition C, but the temperature should be TA---55℃ T+175℃ See Table 4, steps 1, 3 and 4 TA=150℃ TGs—-20V See Table 4, steps 2, 3, 4, 5 and 6 Test condition A All internal leads of each device are subjected to tensile test Limit value Minimum value||tt ||Maximum value 1 device per batch, 0 failure 20(C=0) Inspection or test B5 group Not applicable B6 group High temperature life (Not working) Final test Inspection or test C1 group Dimensions C2 group Thermal shock (glass stress) Terminal strength a. Fine leak detection b. Coarse leak detection||t t||Combined temperature/humidity Cyclic test Appearance and mechanical inspection Final test Group C3 Variable frequency vibration Constant acceleration Final test Group C4 (When required) Not applicable Group C5 SJ20013-92 Continued Table 2 Group B Inspection GJB128 TA-175℃ See Table 4, steps 2 and 6. Table 3 Group C Test GJB128 See Figure 1 Test condition A Test condition E See Table 4, steps 1, 3 and 4 See Table 4, steps 1, 3 and 4 Test or test Group C6 Steady-state working life (high temperature reverse bias) Final test: Gate-source cut-off current Gate-source cut-off current||t t||Zero gate voltage drain current Small signal common source short circuit Forward transconductance SJ20013--92 Continued Table 3 Group C test GJB128 TA=150℃ VGs--20V See Table 4, steps 2, 3, 4, 5 and 6 Table 4 Final test of Group B and Group C GB4586 Drain-source short circuit Ves =-10V Surge source short circuit VGs-—10Vbzxz.net Gate source short circuit Vps=10V Pulse method (see 4.5.1) Vps=10V f-1kHz Pulse method (see 4.5.1) Enter—10 Limit value Minimum value Maximum value Zero gate voltage drain current Small signal common source Short circuit Forward transconductance 5 Delivery preparation SJ20013—92 Continued Table 4 Final test of Group B and Group C GB4586 Gate-source short circuit Vrs=10V Pulse method (see 4.5.1) Vps-10V f=1kHz Pulse method (see 4.5.1) Packing requirements shall comply with the provisions of GJB33. 6 Notes A/ytah The required terminal material and coating shall be specified in the contract or order (see 3.2.1). If required by the user, the typical characteristic curve may be specified in the contract or order. Comparison between CS10 and factory model 3DJ4: Additional notes: 3DJ4G, H This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Wu Zhilong, Zhang Zongguo, Liu Meiying. Project code: B91019. Minimum value Maximum value Tax 15% of the initial value Tax 25% of the initial valueRough leak detection Comprehensive temperature/humidity Cyclic test Appearance and mechanical inspection Final test Group C3 Variable frequency vibration Constant acceleration Final test Group C4 (When required) Not applicable Group C5 SJ20013-92 Continued Table 2 Group B inspection GJB128 TA-175℃ See Table 4, steps 2 and 6. Table 3 Group C Test GJB128 See Figure 1 Test condition A Test condition E See Table 4, steps 1, 3 and 4 See Table 4, steps 1, 3 and 4 Test or test Group C6 Steady-state working life (high temperature reverse bias) Final test: Gate-source cut-off current Gate-source cut-off current||t t||Zero gate voltage drain current Small signal common source short circuit Forward transconductance SJ20013--92 Continued Table 3 Group C test GJB128 TA=150℃ VGs--20V See Table 4, steps 2, 3, 4, 5 and 6 Table 4 Final test of Group B and Group C GB4586 Drain-source short circuit Ves =-10V Surge source short circuit VGs-—10V Gate source short circuit Vps=10V Pulse method (see 4.5.1) Vps=10V f-1kHz Pulse method (see 4.5.1) Enter—10 Limit value Minimum value Maximum value Zero gate voltage drain current Small signal common source Short circuit Forward transconductance 5 Delivery preparation SJ20013—92 Continued Table 4 Final test of Group B and Group C GB4586 Gate-source short circuit Vrs=10V Pulse method (see 4.5.1) Vps-10V f=1kHz Pulse method (see 4.5.1) Packing requirements shall comply with the provisions of GJB33. 6 Notes A/ytah The required terminal material and coating shall be specified in the contract or order (see 3.2.1). If required by the user, the typical characteristic curve may be specified in the contract or order. Comparison between CS10 and factory model 3DJ4: Additional notes: 3DJ4G, H This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Wu Zhilong, Zhang Zongguo, Liu Meiying. Project code: B91019. Minimum value Maximum value Tax 15% of the initial value Tax 25% of the initial valueRough leak detection Comprehensive temperature/humidity Cyclic test Appearance and mechanical inspection Final test Group C3 Variable frequency vibration Constant acceleration Final test Group C4 (When required) Not applicable Group C5 SJ20013-92 Continued Table 2 Group B inspection GJB128 TA-175℃ See Table 4, steps 2 and 6. Table 3 Group C Test GJB128 See Figure 1 Test condition A Test condition E See Table 4, steps 1, 3 and 4 See Table 4, steps 1, 3 and 4 Test or test Group C6 Steady-state working life (high temperature reverse bias) Final test: Gate-source cut-off current Gate-source cut-off current||t t||Zero gate voltage drain current Small signal common source short circuit Forward transconductance SJ20013--92 Continued Table 3 Group C test GJB128 TA=150℃ VGs--20V See Table 4, steps 2, 3, 4, 5 and 6 Table 4 Final test of Group B and Group C GB4586 Drain-source short circuit Ves =-10V Surge source short circuit VGs-—10V Gate source short circuit Vps=10V Pulse method (see 4.5.1) Vps=10V f-1kHz Pulse method (see 4.5.1) Enter—10 Limit value Minimum value Maximum value Zero gate voltage drain current Small signal common source Short circuit Forward transconductance 5 Delivery preparation SJ20013—92 Continued Table 4 Final test of Group B and Group C GB4586 Gate-source short circuit Vrs=10V Pulse method (see 4.5.1) Vps-10V f=1kHz Pulse method (see 4.5.1) Packing requirements shall comply with the provisions of GJB33. 6 Notes A/ytah The required terminal material and coating shall be specified in the contract or order (see 3.2.1). If required by the user, the typical characteristic curve may be specified in the contract or order. Comparison between CS10 and factory model 3DJ4: Additional notes: 3DJ4G, H This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute. The main drafters of this specification: Wang Changfu, Wu Zhilong, Zhang Zongguo, Liu Meiying. Project code: B91019. Minimum value Maximum value Tax 15% of the initial value Tax 25% of the initial value Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.