This standard specifies the terms and definitions of sensitive devices, including 11 parts: thermal (temperature) sensitive, light sensitive, pressure sensitive, humidity sensitive, gas sensitive, magnetic sensitive, force sensitive, ion sensitive, biological sensitive, radiation sensitive and fiber optical sensitive devices. This standard is applicable to the production, use, scientific research and teaching of sensitive devices, as a basis for unified technical terms. GB/T 4475-1995 Terminology of Sensitive Components GB/T4475-1995 Standard download decompression password: www.bzxz.net

UDC 621. 39 - 621- 316. 8 - 001. 4L15
National Standard of the People's Republic of China
GE/T 4475-1995
Terms of sensor
Published on July 24, 1995
Implemented on April 1, 1996
Published by the State Technical Supervision Bureau
《Terms and Scope of Application》
3 Terms Used
Terms for Temperature Sensitive Components
Terms for Optical Interrupt Components
Terms for Pressure Sensitive Components
2.5 Terms for Virtual Sensitive Components
Terms for Gas-Induced Components
Terms for Magnetic Components Terminology of ion-sensitive components. Terminology of bio-indicators. Terminology of radiation-sensitive components. Terminology of fiber optics. Terminology of fiber optics. Terminology of radiation-sensitive components. Terminology of fiber optics. Terminology of radiation-sensitive components. Terminology of fiber optics. Terminology of radiation-sensitive components. Terminology of fiber optics. Terminology of radiation-sensitive components. Terminology of fiber optics. Terminology of radiation-sensitive components. sensor
1 Subject content and scope of application
GB/T4475—1995
The latest GB4475-S4
standard specifies the terms and definitions of sensitive components, including 11 parts: heat (temperature) sensitive, photosensitive, positive sensitive, optical sensitive, gas sensitive, aldehyde sensitive, force sensitive, phonon sensitive, biosensitive, radiation sensitive and new optical sensitive components. This standard is applicable to the production, use, scientific research and teaching of sensitive components. As a unified technical term, 2 Terminology
2.1 General term
2.1.1 Digital sensor sensor
The general term for sensitive optical devices and digital sensors is a device that can sense 2.1.2 Sensing body The body that constitutes the sensitive component and can sense and convert the information. 2.1.3 Sensing element The sensing element composed of a sensitive body with resistance, capacitance, inductance and other properties, whose properties change with the changes of the sensed information. 2.1.4 Sensing device The sensitive component composed of a sensitive body with properties such as junction characteristics and electromotive force, whose properties change with the changes of the sensed information. 2.1.5 Upper category temperature The highest ambient temperature for which the component is designed to work continuously. Lower category temperature The lower ambient temperature for which the component is designed to work continuously. 2.1.7 Category temperature range The range of ambient temperatures in which the component can continuously operate 2.1. Maximum surface temperature The temperature of the hot spot on the surface of the component (including the lead-out terminal). 2.1.9 Minimum surface temperature The temperature of the cold spot on the surface of the component (including the lead-out terminal). 2.1.10 Maximum ambient temperature The maximum ambient temperature in which the component can continuously operate under specified conditions. 2.1.11 Allowable deviation The maximum allowable deviation between the indicated value and the nominal value. National Technical Supervision Commission approved on July 24, 1995, implemented on April 1, 1996
2..12 Durability
GA/T4475—1995
The electrical parameters of components change after a specified period of time under the specified test conditions. 2.1.13 Stability
The components are stored, tested or used under the specified conditions, and maintain the original parameters for a specified period of time. 2.1.14 Resistivity
The degree of compliance of the same device with the same performance specification when repeatedly tested under the same conditions. 2.1.15 Interchangeability:tyThe components of the same model and specification can maintain the performance requirements of the main technical standards of the whole machine after replacement.
2.2 Terminology of Thermal Components
2.2.1 Classification of Thermal (Overheat) Components 2-2.1.1 Thermal Components are sensitive elements and components that are sensitive to temperature changes. 2.2.1.2 Thermal Resistance: A component whose resistance value changes significantly with the change of its resistance temperature. 2.2.1.3 Thermal Coefficientpositivetemperaturecoefficient(I\TC)thermistorA thermistor whose zero-frequency resistance increases with increasing temperature within the operating temperature range. 2.2.1.42
Negative temperature coefficient (NTC) thermistorEqual temperature coefficient(TC)thermistorA thermistor whose zero-frequency resistance decreases with increasing temperature within the operating temperature range. 2.2.1.5 Positive graduallythangtdtemperaturecoefficientthermigtr
A positive temperature coefficient thermistor whose efficiency does not change within the operating temperature range. 2-2.1.6 Positive step-function ionization coefficient thermistor (PTC-S thermistor) A thermistor whose average resistance increases stepwise with the increase of temperature when the temperature rises to a specified value. 2.2.1.7 Critical temperature thermistor A thermistor whose power resistance value decreases (for VTC) or increases (for PTC) at the base temperature. 2.2.1.8 Linear thermistor A thermistor whose resistance-temperature characteristic is linear or nearly linear within the operating temperature range. 2.2.1.9 Directly hezted thermistor A thermistor whose resistance changes with temperature by measuring the current through the sensing gate. 2.2-1.1G indirectly heated thermal micro-resistor with slightly heated thrinistor and potential insulator and thermal digital electrical equipment: 2.2.1.11 thermal light commonermista is used as a temperature monitoring device with compensation for potential expansion effect, etc. 2.2.1.12 thermal measuring device ertuss
is used as a temperature measuring base thermal resistor. 2.2.1.13 Thermal efficiency resistor: mainly used for temperature control. 2.2.1.14 High temperature resistor: mainly used for temperature measurement and control. 2.2.1.15 Low temperature resistor: mainly used for temperature measurement and control. 2.2.1.16 Thermal resistor: mainly used for temperature measurement and control. 2.2.1.16 Thermal resistor: mainly used for temperature measurement and control. 2.2.1.17 Thermal resistor: mainly used for temperature measurement and control. 2.1:17
Thermistors mainly used to stabilize low voltage. Microwave Thermistor2.2.1.18
Thermistors mainly used to measure high frequency small voltage. 2. 2. 1. 19
Thermistors mainly used to measure and control flow rate (flow). Insulatectheimistor2.2.1.201
Thermistors that can pass the specified insulation and dielectric tests. 2. 2. 1.21
Non-insulated thermal dissipator Turl-insulated thermal dissipator Thermistor that does not require insulation pressure and insulation test. 2.2.1-22 Thermal dissipator with insulation structure that can meet the thermal dissipation requirements. 2.2.7. 23
2.2.1.24
2.2.1. 25
Non-sealed thermistorNuncnvclopedthermis-orThermistor without sealed structure and performance. Thin film thermistorThin film thermistorThermistor made by forming a thin film on a substrate by laser or other methodsThick film thermistorThermistor made by forming a thick film on a substrate by screen printing or laser or other methods. 6Chip thermistorChipthermiator
2- 2. 1. 26bZxz.net
Chip leadless thermistor for surface assembly. 2. 2. 1. 27
2- 2. 1- 28
2. 2. 1. 29
Single crystal thermistorManerstalthermisiorThermistor made of single crystal material. Polycrystalline thermistor Raulti-cryatalthermistor A thermistor made of polycrystalline materials. Amorphous semiconductor thermistor Amorphous semiconductor thermistor A thermistor made of amorphous semiconductor materials. Organic semiconductor thermistor Uganic semiconductor thermistor 2. 2. 1. 30
A thermistor made of organic semiconductor materials. 2.2.1.31
Metal thermistor Metaltemperaturethermintor A thermistor made of the property that the resistance value of the thermistor changes with temperature. 2. 2. 1. 32
Platinum thermistor Pla:iniumtemperaturethermistor A thermistor made of the property that the resistance value of the thermistor changes with the length. 2.2.1.33
metal oxide thermoelectric limitermetal oxide thermoelectric limitermetal oxide thermoelectric limiter2.2.1.34Thermoelectric thermoelectric limitermetal oxide thermoelectric limitermetal oxide thermoelectric limiter2.2.1.35
A thermoelectric limiter made of metal oxide material2.2.1.36
A thermoelectric limiter made of metal oxide material2.2.1.37
Thermoelectric limiter2.2.1.38
Thermoelectric limiter2.2.1.39
Thermoelectric limiter2.2.1.40
Thermoelectric limiter2.2.1.41
Thermoelectric limiter2.2.1.42
Thermoelectric limiter2.2.1.43
Thermoelectric limiter sensizivedevice3
GB/T4475—1995
Device made by pyroelectric effect of materials 2-2.1.3 Temperature sensitive diode temperatureRturesengitivediode Temperature sensitive device made by temperature characteristics of semiconductor diode. 2-2.1.38 Temperature sensitive crystal temperaturesenmiensistor Temperature digital device made by temperature characteristics of semiconductor diode. 2.2.1.39 Temperature sensitive thyristor 1hermoRengtar Control adopts temperature triggering mode, specially used for measuring and controlling the current of the product. 2.2.7.40
Temperature sensitive device that integrates temperature sensing components with other electronic components. 2.2.1.41 Piezoelectric quartz > plastic whole device pinzneleeiriuyuarlzlepprratnsensitiyedevice and use the system right beauty crystal elastic modulus (frequency) changes with the disk. This characteristic can be used for temperature calibration and then the temperature sensing device.
2.2.1.42 Piezoelectric surface acoustic wave2.2.2.1 Zero power resistance value Zero power resistance value The resistance value of a thermal resistor measured at a specified temperature. When the change in resistance value caused by the internal heating of the resistor body can be ignored relative to the total measurement error, the measured resistance value is 2.2.2.2.2 Nominal zero power resistance value (Kn) Nominal zero power resistance value (Rn) The design resistance of a thermal resistor, usually marked on its surface, also called the nominal zero power resistance value. 2.2.2.3 Electrical-temperature characteristics The relationship between the zero power resistance of a thermal resistor and the resistance of the resistor body. The electrical-temperature characteristics of a thermal resistor can be expressed by the following formula: 1R-Aecnm
Where, A is the resistance value of a thermoplastic resistor at temperature T, A is a coefficient related to the physical properties and geometric dimensions of the thermal resistor material, and B is the thermal sensitivity index t
T is the mechanical temperature.
, the resistance source temperature characteristics of the cascade positive temperature coefficient thermistor are shown in the country (1)
GB/4475-1995
T=26CT
2.2.2.4 Minimum resistance value Ru. (for PTC thermistor) minirmunresiarance R.i. (for PTC thermistor) The zero power resistance value of the lowest point on the resistance temperature characteristic curve of the positive temperature coefficient thermistor (see country 1). 2.2.2.5 Minimum resistance value Ral (for NTC thermistor) minimuneristance Ram (for NTC thermistor) The zero power resistance value of the thermistor at the upper root temperature. 2.22.6 Switching temperature T (for PTC thermistor) switching temperature T (for PTC thermistor) the temperature at which the resistance value of the positive temperature coefficient thermistor begins to increase (see Figure 1). critical temperature (for critical temperature thermistor) eritical1emperature (furCTR) 2.2. 2. 7
the temperature at which the resistance value of the critical temperature thermistor begins to open (for NTC thermistor) or increases (for PTC thermistor).
2.2.2.B Switching resistance Re (for PTC thermistor) switching resistance K (forPTC thermistor) the zero power resistance value of the switching temperature corresponding to the resistance temperature characteristic curve of the positive temperature coefficient thermistor (see Figure 1) maximum voltage (for PTC thermistor) maximum voltag ( farPTCthermistar) 2.2.2.9
In the specified ambient temperature and still air, the maximum DC voltage that can be continuously applied to the thermistor and ensure that the thermistor is working in the PTC characteristic part. Maximum voltage (for NTC thermal resistor) muaximunvoliag (furNTCthermigtor) 2.2.2.10
In the specified ambient temperature, the maximum DC voltage that can be continuously applied without causing thermal runaway of the thermistor. 2.2.2. 11
Temperature T (for PTC thermistor) temperatureT, (for PTC thermistor) The minimum zero-power resistance R is selected at the temperature of the PTC part to be treated (see Figure 1). 2.2.2.12 Resistance R, (for PTC thermistor) TeaietancR (for PTC thermistor) The resistance at the time of measuring temperature T under the measuring temperature (see Figure 1): The resistance value is the minimum value (see Figure 1). 2.2.2.13 Zero-power voltage temperature coelficientatzerb-powerafreristance The ratio of the rate of change of the zero-power resistance value of the thermistor to the corresponding temperature at which the change occurs under a specified temperature. The power-resistance-temperature coefficient is expressed by the following formula: dR
Scientific power coefficient
GB/T4475-1955
The power-resistance value of thermistor at a specified temperature; thermal primary temperature.
2.2.2.14 Equivalent thermal coefficient esamcea0
The ratio of the zero-power resistance of the thermistor to two different temperatures. 2. 2. 2. 2. 15 Value
The negative temperature coefficient is the sensitivity index of the thermistor, which is defined as the difference between the logarithm of the power-resistance value at two temperatures and the logarithm of the temperature. R value is expressed by the following formula:
, equal power resistor value at dissipation temperature: R. Degeneration T, zero-rate self-resistance value at dissipation temperature
2.2.2.16 Dissipation coefficient disg:patianfartor The ratio of the dissipated power of the thermistor to the corresponding change in the temperature of the thermistor under specified environmental conditions. 2.2.2.i7 Thermal time constant zh-hermz]timeoonstantt3)
Under zero power conditions, when the temperature changes, the time it takes for the thermistor's temperature to change by 3.2% of the temperature range between the first and last two hours.
2.2.2.18 E-current characteristic voliage/clrrenicharacteristic The relationship between the terminal voltage of the thermistor and its steady-state self-current when in equilibrium at specified temperature and in static atmosphere. 2-2.2.19 Current/time characteristic The rate of change of the current through the self-resistance after the device is connected to the working current. Current limiting characteristic (PTC thermistor): tenlimiialinncharacterietic (nrFTCthe:mis-or) 2.2. 2.20
When the full voltage of the positive temperature system thermal resistor reaches a certain value, the current flowing through the thermal resistor group will no longer fall into the change characteristics of the increase of the applied voltage within a certain range, and the NTC thermistor) uluginbileelwrlerislir (nrNTC:hermis:n) 2-2.2.21
When the current flowing through the thermal resistor egg reaches a certain value, the end of the thermistor group of the thermistor voltage is within a certain range without the need for Ya towel current control.
2-2-2.22 Indirectly aelectrostatic characteristic The relationship between the zero power resistance of a thermistor and the current (or current) in the heater. 2.2.2.23 Frequency aberration The ratio of the change in resistance of a thermistor to the change in power consumption that causes this change when the above point is operated. 2.2-2.24 Thermal conductivity The ratio of the thermal power consumption that causes this change in resistance when the heat element in the thermistor is heated to change its resistance from a certain value to a certain value.
2-22.25 Temperature Thermistor The ratio of the power consumption that causes this change in resistance to the power consumption that causes this change in resistance when the heat element in the thermistor is heated to change its resistance from a certain value to a certain value.
2-22.25 Temperature Thermistor ... 2-2.2-25I working point power wcr of ojerui:g pimt also under the specified environmental conditions, the thermal output value reaches the workpiece point resistance value. The power measured on the thermal resistor or heater.
2.2.2.27 Rated power eddpaion
GB/T4475-—1995
The maximum power that can be applied to the thermal resistor for long-term fast chain stop work under specified conditions 2.2.2.28 Rated working current ratedoerilingurer The maximum current value specified by the thermistor under working conditions. Differential resistance 2.2.2.29
The rate of tangency of the voltage-current characteristic curve of the thermistor at a specified point. That is, rdV/d. 2.2.2.30 Temperature point blue temperature coefficient tem[verulure uf tenperture cuntrul ul opezatiun puint The temperature control point temperature of the first and second type thermal resistors is used for temperature control. The temperature coefficient of the first and second type thermal resistors is the temperature control point temperature. 2.2.2.31
The quarter power resistor value corresponding to the temperature of the first and second type thermal resistors. 2.2.2.32 Insulation resistance innulatimlresintauce The voltage between the lead-out terminal and the outer package of a direct-heated thermistor or between the heating element and the heater of a indirectly-heated thermistor under specified environmental conditions. 2.2.2.33 Insulation voltage isolationvaltagg The maximum peak voltage between the lead-out terminal and the outer package of a directly-heated thermistor or between the heating element and the heater of an indirectly-heated thermistor under continuous operating conditions. 2.3 Terminology of non-conductive components
2.3.1 Classification of photosensitive components
2.3.1.1 Photosensitive element phataA sensing element1andtdevice A sensitive component to light,
2.3.1.2 Photosensitive resistor yhotarcaiator phataconductivecell A semiconductor resistor whose resistance varies with the intensity of incident light. 2.3.1.3 Ultraviolet photoresistor Ultra-violet photoresistor Response value is a photoresistor used in the ultraviolet range. 2.3.1.4 Visible light photoresistor Response value is a photoresistor used in the visible light range. 2.3.1.5 Infra-red photoresistor Infra-red photoresistor Response value is a photoresistor used in the infrared range. 2.3.1.6 Photopotentiometer A potentiometer whose resistance value changes with the position of the incident light on the photoresistor layer. 2.3.1.7 Solar photoresistor A photoresistor made of semiconductor material. 2.3.1.8 Energy-isolation photoresistor Uei:riumsulfidephotorcsistur A photoresistor made of monocrystalline or polycrystalline sulfide. 2.3.1.9 Cadmium selenide photoresisor Photosensitive resistor made of single crystal or polycrystalline zinc sulfide. 2.3.1.10 Zinc sulfide photoresistor Photoresistor made of single crystal or polycrystalline zinc sulfide. 2.3.1.11 Cadmium sulfide and cadmium selenide phororezistor Cadmium sulfide and cadmium selenide phororezistor 2.3.1.12 Cadmium sulfide and cadmium selenide phororezistor ... 2.3.1.12
Photosensitive device made of leadsulfide or lead oxide: lezdantimonidephotoresistor2.3.1.13
Photoresistor made of leadsulfide or lead oxide: GE/T4475-1995
Lerury-cdmium telluride photoresistor2.3.1.14 Photosensitive resistor
Photoelectric device made of leadsulfide or lead oxide. 2.3.1.15 Photosensitive (photoelectric) diode: Semiconductor diode made of light. 2-3-1.15 Photosensitive (photodiode) diodes that use V to break down the light. 2-3. 1.175
Xian ultraviolet light <photodiode ulravipletphotoclcctricdode photodiode that responds to ultraviolet light (photoelectric) diodes, 2.3.1.1 visible photosensitive <photo> diode visiblepnataelectricdiode photodiode that responds to visible light (photoelectric) diodes, 2.3.1.19 infrared light whip photo> diode irfruretphutueleetricediude photodiode that responds to infrared light (photoelectric) diodes. 2.3.1.20 photosensitive (photo> diode phatcelectictransistor that can convert light into color conduction, design the tube to conduct electricity effectively, 2. 3. 121
Photosensitive thyristor (photothreshold thyristor) is a kind of micro-discharger radiated by light.
2.3.2 Photosensitive device parameters
2.3.21 Color temperature
When the color of the light source is the same as the characteristic color of the ideal body radiation, the mechanical temperature of the light source is the color temperature of the light source. 2.3.2.2 Standard light source is a light source that can emit standard color temperature.
2.3.2.3 Alternative current characteristic Absolute ... 2.3.2.6 Light resistance The resistance of a photosensitive device when the illumination is zero. 2.3.2.7 Initial dark resistance The resistance of a photosensitive device when it is exposed to light. 2.3.2.8 Initial light resistance The resistance of a photosensitive device when it is exposed to light for a specified period of time and then the light is removed and the resistance is measured after a specified period of time. 2.3.2.9 Balance resistance Balance resistance Dark resistance The resistance of a photosensitive device when it is exposed to light for a specified period of time and then the light is removed and the resistance is measured after a specified period of time. 2.3.2.10 Balance resistance Balancing ... After a specified time of storage, the resistor is exposed to weak light, and then exposed to light for a long enough time, the dark current is measured when the rate of change of the limit value is less than ten specified values. 2.3.2.11 Dropout current drk cur=cnt
The current flowing through the resistor when the light is zero lux under the specified external voltage. 2-3-2.12 Charge current ligbt cu-reat
GB/T44751995
The current flowing through the resistor when exposed to light under the specified external voltage. 2.3.2.13 Initial darlcurrent The dark current value is obtained after the resistor is exposed to specified light and the light is removed for a specified time. 2.3.2.14 Initial light currrntThe current value measured after a photoresistor has been exposed to light for a specified time and then exposed to light for a specified time.
5Balanced currentbalanecddarkcurren?2. 3 2. 15
After a photoresistor has been exposed to light for a specified time, the current change rate is less than the specified value after a sufficient period of time has passed.
2.3.2.16Balanced lightcurzentThe current value measured after a photoresistor has been exposed to light for a specified time and then exposed to light for a sufficient period of time and then the current change rate is less than the specified value. 2.3.2.17Photoelectric currentThe difference between the photoresistor's operating current and the photoelectric current. 2.3.2.18Resistance ratioThe ratio of the photoresistor's dark resistance to its bright resistance. 2.3.2.19 Photosensitive resistor sensitivity The ratio of the difference between the light current and the dark current of a photoresistor. 2.3-2.20 Photosensitive resistor sensitivity (also known as photoelectric sensitivity, integral sensitivity) The ratio of the photocurrent of a photosensitive resistor to the light flux of the photosensitive resistor. 2.3.2.21 Specific sensitivity (or specific sensitivity, specific photoelectric sensitivity) Specific sensitivity (or specific photoelectric sensitivity) Specific sensitivity (or specific photoelectric sensitivity) Specific sensitivity under single voltage.
2.3.2.22 Spectral sensitivity The corresponding sensitivity obtained when a resistor is irradiated with various single lights. 2.3.2.23 Photometric value The minimum incident light when the brightness current of a resistor is equal to its single current. Relative spectral sensitivity 2.3.2. 24±
The ratio of the sensitivity of a photoresistor at one wavelength to the maximum value of its spectral sensitivity. 2.3.2.25 Photoresistor characteristic (spectral response) The relationship between the relative spectral sensitivity of a photoresistor and its wavelength. 2.3.2-26 Photoresistor range (wavelength response range) The wavelength range on the spectral response curve of a photoresistor that has a certain sensitivity to light. 2.3.2-27E
Peak wavelength wavelengthtfprakTesusmisive photoresistor The wavelength value at which the photoresistor has the maximum sensitivity on the spectral response curve. 2-3. 2. 28 Luminicetion When a certain voltage is applied to the photoresistor, the current or charging resistance of the photoresistor is related to the light intensity. 2.3.2.29 Illuminatian expansion factor (valur) is an index that characterizes the nonlinearity of the photoresistor. The approximate linear part of the double logarithmic coordinates of the illuminance is: color single, its relationship with the bright current and light intensity is KE
武市,
一竞自流:
一Proportional coefficient,
L—Light intensity
Service index
GB/T4475-—1995
2.3.2.30 History effect (memory effect) history effect memory effect) The influence of the last irradiation intensity or dark state and duration on the photoresistor characteristics. 2.3.2.31 state history effect lightstate history effect The influence of the intensity and duration of the previous illumination on the photoresistor's characteristic parameters. 2.3.2.32 state history effect lurkarniatryr[ect The influence of the duration of the previous illumination on the photoresistor's characteristic parameters. 2.3.2.33 response time
The time required for the photoresistor's current value to change by a specified proportion of the steady-state value from the moment the light is switched on or off.
2.3.2.34
rise time
The time required for the current value to rise by a specified proportion of the steady-state value from the moment the light is switched on or off.
2.3-2.35 Fall time
The time required for the photoresistor to reduce the lighting current value to a specified proportion of the running value from the time when the connection to the state is cut off.
2.3.2.36 Frequency characteristic The relationship between the charging current and the lighting current of the photoresistor and the change of the modulation frequency of the irradiated light (charging and dark conversion adjustment per unit time). 2.3.2.37 Temperature coefficient of resistance The relative change of the lighting current of the photoresistor for every 1 degree change in temperature under certain illumination. 2.3.2.38 Current coefficient: The relative change rate of the lighting current of the photoresistor for every 1 degree change in temperature under certain illumination. 2.3.2.39 Rated power rating The maximum power allowed to be consumed by the whole resistor for long-term normal operation at the specified temperature. 2-4 Terminology of varistor 2.4.1 Classification of varistor 2.4.1.1 Varistor A varistor made of a material that is sensitive to medium voltage information. Varistor (volisgedepeedentegistor) 2.4.1-21 A varistor whose conductivity increases rapidly with the increase of voltage at a certain temperature. This characteristic can be expressed by one of the following two formulas: V+cr Wherein, current, voltage of the varistor: voltage applied to the varistor; current index: —— positive indication:36 Frequency characteristic The relationship between the charge current and brightness of a photoresistor and the modulation frequency of the illumination light (charge/darkness conversion adjustment per unit time). 2.3.2.37 Temperature coefficient of resistance The relative change of the brightness of a photoresistor for every 1°C change in temperature under certain illumination. 2.3.2.38 Current coefficient The relative change rate of the brightness of a photoresistor for every 1°C change in temperature under certain illumination. 2.3.2.39 Rated power rating The maximum power allowed to be consumed by the whole resistor for long-term normal operation at the specified temperature. 2-4 Terminology of varistor 2.4.1 Classification of varistor 2.4.1.1 Varistor A varistor made of a material that is sensitive to medium voltage information. Varistor (volisgedepeedentegistor) 2.4.1-21 A varistor whose conductivity increases rapidly with the increase of voltage at a certain temperature. This characteristic can be expressed by one of the following two formulas: V+cr Wherein, current, voltage of the varistor: voltage applied to the varistor; current index: —— positive indication:36 Frequency characteristic The relationship between the charge current and brightness of a photoresistor and the modulation frequency of the illumination light (charge/darkness conversion adjustment per unit time). 2.3.2.37 Temperature coefficient of resistance The relative change of the brightness of a photoresistor for every 1°C change in temperature under certain illumination. 2.3.2.38 Current coefficient The relative change rate of the brightness of a photoresistor for every 1°C change in temperature under certain illumination. 2.3.2.39 Rated power rating The maximum power allowed to be consumed by the whole resistor for long-term normal operation at the specified temperature. 2-4 Terminology of varistor 2.4.1 Classification of varistor 2.4.1.1 Varistor A varistor made of a material that is sensitive to medium voltage information. Varistor (volisgedepeedentegistor) 2.4.1-21 A varistor whose conductivity increases rapidly with the increase of voltage at a certain temperature. This characteristic can be expressed by one of the following two formulas: V+cr Wherein, current, voltage of the varistor: voltage applied to the varistor; current index: —— positive indication:
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