This specification specifies the detailed requirements for 3DG130 NPN silicon high frequency low power transistors (hereinafter referred to as devices). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 <General Specification for Discrete Semiconductor Devices>. SJ 20015-1992 Semiconductor Discrete Devices GP, GT and GCT Level 3DG130 NPN Silicon High Frequency Low Power Transistor Detailed Specification SJ20015-1992 Standard download decompression password: www.bzxz.net
This specification specifies the detailed requirements for 3DG130 NPN silicon high frequency low power transistors (hereinafter referred to as devices). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 <General Specification for Discrete Semiconductor Devices>.

1 Scope
People's Republic of China Electronic Industry Military Standard Semiconductor Discrete Devices
GP, GT and GCT Classes
3DG130 Type NPN Silicon High-Frequency Low-Power Transistor Detail Specification
Semiconductor discrete deviceDetailspecificationforNPNsiliconbigh-frequencylow-powertransistorfortype3DG130
GP,GT andGCT classes
1.1 Subject Content
SJ20015—92
This specification specifies the detailed requirements for 3DG130 type NPN silicon high-frequency low-power transistor (hereinafter referred to as device). This device provides three levels of product assurance (GP, GT and GCT classes) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices".
China Electronics Industry Corporation Published on February 1, 1992, implemented on May 1, 1992
1.2 Dimensions
SJ20015—92
Dimensions should comply with the A3-02B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1:
Terminal polarity:
Figure 1 Dimensions Dimensions
1.3Maximum ratings
TA-25℃
3DG130A
3DG130B
3DG130C
3DG130D
Te-25℃
0.30?x?
Note: 1) When TA>25℃, derate linearly by 4.0mW/℃. 2) When Te>25℃, derate linearly by 15mW/C, 2
1. Emitter
3. Collector
Unit: mm
A3-02B
Tstg and T
-65~+200
1.4 Main electrical characteristics (T^=25℃)
Symbol (unit)
Caba(pF)
VcE(sat)
VE(at)
Test conditions
Vee=10V
Vcg=10V
Ic=3mA
Vcg -10V
Ic=50mA
Vce-10V
Ic=300mA
Vcg10V
Ic-50mA
f=100MHz
Vcn-10VIg-0
f=1MHz
Ic=100mA
g=10mA
Ic=100mA
I=-10mA
VcE=10V
Ic-50mA
f-30MHz
Note: 1) Pulse method (see 4.5.1).
2 Reference Documents
SJ20015—92
3DG130
3DG130
3DG130
3DG130
3DG130A
3DG130B
3DG130C
3DG130D
All Models
All Models
All Models
3DG130A
3DG130B
3DG130C
3DG130D||t t||GB4587-84
Test method for bipolar transistors
GB7581—87
Dimensions of discrete semiconductor devices
GJB33-85
GJB128-86
General specification for discrete semiconductor devices
Test methods for discrete semiconductor devices
Limit values
Minimum values
Maximum values
3 Requirements
3.1 Detailed requirements
SJ20015-92
All requirements shall comply with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions
The design, structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating
The terminal material shall be Kovar. The surface coating of the lead terminal shall be gold-plated, tin-plated or immersion tin. When the material and coating of the lead terminal are selected or otherwise required, it shall be clearly specified in the contract or order (see 6). 3.3 Marking
The marking of the device shall be in accordance with the provisions of GJB33.
4 Quality Assurance Provisions
4.1 Sampling and Inspection
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification Inspection
Qualification Inspection shall be in accordance with the provisions of GJB33.
4.3 Screening (GT and GCT grades only)
Screening shall be in accordance with Table 2 of GJB33 and this specification. The following tests shall be carried out in accordance with Table 1 of this specification, and devices exceeding the specified limit values ​​shall not be accepted.
(See Table 2 of GJB33)
7. Intermediate parameter test
8. Power aging
9. Final test
4.3.1 Power aging conditions
Power aging conditions are as follows;
TA=25±3℃
Vc=20V(3DG130A,C)
VcR=30V(3DG130B,D)
Pm=700mW
IcBOn and hFES
GT and GCT grades
Grouped as A2 in Table 1 of this specification;
AIcBo1=100% of the initial value or 5nA, whichever is larger; AhFE3=±15%
Note: It is not allowed to add a heat sink or forced air cooling to the device. 4.4 Quality consistency inspection
Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A inspection
SJ20015—92
Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B inspection
Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the requirement for the amount of change (△) shall be carried out in accordance with the steps of Table 4 of this specification.
4.4.3 Group C inspection
Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and the requirement for the amount of change (△) shall be carried out in accordance with the steps of Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions. 4.5.1 Pulse test
The pulse test shall be in accordance with the provisions of 3.3.2.1 of GJB128. Table 1 Group A inspection
Inspection or test
Group A1
Appearance and mechanical inspection
Group A2
GJB128
Collector-base breakdown voltage 2.9.2.1
3DG130A.C
3DG130B, D
Collector-emitter breakdown voltage This specification
3DG130A.C
3DG130B.D
Appendix A
Emitter -Base breakdown voltage 2.9.2.2
Collector-base cut-off current
3DG130A.C
3DG130B, D
Emitter-base cut-off current
Forward current transfer ratio
Forward current transfer ratio
GB4587
Emitter-base open circuit
Ic=10μA
Emitter-base open circuit
Ic-5mA
Pulse method (see 4.5.1)
Collector-base open
Ig-10μA
Emitter-base open
Vcn=30V
VcB=-50V
Collector-base open
Vce-10V
VcE=10V
Ic=3mA
V(BR)CBO
VBR)CHO||tt| |V(BR)EBO
Limit value
Minimum maximum value
Inspection or test
Forward current transfer ratio
Forward current transfer ratio
Collector-emitter saturation
Base-emitter saturation voltage drop
A3 groupwwW.bzxz.Net
High temperature operation
Collector-base cut-off current 2.1
3DG130A,C|| tt||3DG130B, D
Low temperature operation
Forward current transfer ratio
A4 group
Open circuit output capacitance
Characteristic frequency
3DG130A, B
3DG130C, D
Power gain
3DG130A, B
3DG130C, D
A5, A6 and A7 group
Not applicable
SJ20015--92
Continued Table 1A Group Test
GB4587
VcE10V
Ic=50mA
Vcg=ioV
Ic-300mA
Pulse method (see 4.5.1)
le=100mA
In—10mA
Ic =100mA
In=10mA
Ta=+150℃
Emitter-base open
Vcn-30V
Vcn50V
TA--55C
Vcn-10V
Ic=50mA
2.11.3Vc=10V,1g0
f-IMHz
2.1 1.2Vc-10V,Ic-50mA
f-100MHz
Vce-10V
le50mA
VcE(at)
VBE(sat)
Limiting value
Minimum value
Maximum value
Inspection or test
B1 group
Solderability
Durability of mark||t t||B2 Group
Thermal shock (temperature cycle)
a. Fine leak detection
b. Coarse leak detection
Final test:
B3 Group
Steady-state working life
Final test:
B4 Group
Visual inspection inside the cap
(Design verification)
Bond strength
B5 Group
Not applicable||t t||B6 group
High temperature life
(not working)
Final test:
SJ20015-—92
Table 2B group inspection
GJB128
See Table 4. Steps 1, 3 and 4
Vcn=20V, Pot=700mW
TA=25±3℃
It is not allowed to add heat sink or strong air cooling to the device. See Table 4, steps 2 and 5.
Visual inspection standard is based on the design at the time of identification
TA-200℃
See Table 4, steps 2 and 5.
One device per batch, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Rough leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C Group 4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
SJ20015--92
Table 3 Group C test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA=25±3C.Vc=20V
Ptot=700mW||tt ||It is not allowed to add heat sink to the device
or force air cooling
See Table 4, steps 2 and 5
Enter-10
Inspection or test
Collector-base cut-off current
3DG130A, C
3DG130B, D
Collector-base cut-off current
3DG130A.C
3DG130B, D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20015—92||tt| |Table 4 Final test for Group B and Group C
GB4587
Emitter-base open circuit
Vea-30V
VcB=50V
Emitter-base open circuit
VcB-30V
Vcn=50V
Ic=100mA
Ig=10mA
Vce-10V
Ic-50mA
VcE=10V
Ic-50mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
VcE(sat)
Ahregi
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limiting values ​​
Minimum values ​​
Maximum values ​​
Initial values ​​
SJ20015—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
Test circuit see Figure A1
Voltage source
Collector-emitter breakdown voltage test circuit diagram AI
A3 Steps
Resistor R, a current limiting resistor, should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the minimum limit value of V(BR>CEo at the specified test current, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was jointly drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Xie Peilan, and Zhu Chenglin. Planned project: B91023.C
3DG130B, D
Low temperature operation
Forward current transfer ratio
Group A4
Open circuit output capacitance
Characteristic frequency
3DG130A, B
3DG130C, D
Power gain
3DG130A, B
3DG130C, D
Group A5, A6 and A7
Not applicable
SJ20015--92
Continued Table 1 Group A Test
GB4587
VcE10V
Ic=50m A
Vcg=ioV
Ic-300mA
Pulse method (see 4.5.1)
le=100mA
In—10mA
Ic=100mA
In=10mA
Ta=+150℃
Emitter-base open
Vcn-30V
Vcn50V
TA--55C
Vcn-10V
Ic=50mA
2.11.3Vc=10V,1g0
f-IMHz
2. 11.2Vc-10V,Ic-50mA
f-100MHz
Vce-10V
le50mA
VcE(at)
VBE(sat)
Limit value
Minimum value
Maximum value
Inspection or test
Group B1
Solderability
Durability of marking
Group B2
Thermal shock (temperature cycle)
a. Fine leak detection
b. Rough leak detection
Final test:
Group B3
Steady-state working life Life
Final test:
B4 group
Open cap internal visual inspection
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test:
SJ20015-—92
Table 2B group inspection
GJB128
See Table 4. Steps 1, 3 and 4
Vcn=20V,Pot=700mW
TA=25±3℃
It is not allowed to add heat sink or strong air cooling to the device. See Table 4, steps 2 and 5.
Visual inspection standard is as designed during identification
TA-200℃
See Table 4, steps 2 and 5.
One device per batch, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Fine leak detection
b. Rough leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C Group 4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
SJ20015--92
Table 3 Group C test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA=25±3C.Vc=20V
Ptot=700mW||tt ||It is not allowed to add heat sink to the device
or force air cooling
See Table 4, steps 2 and 5
Enter-10
Inspection or test
Collector-base cut-off current
3DG130A, C
3DG130B, D
Collector-base cut-off current
3DG130A.C
3DG130B, D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20015—92||tt| |Table 4 Final test for Group B and Group C
GB4587
Emitter-base open circuit
Vea-30V
VcB=50V
Emitter-base open circuit
VcB-30V
Vcn=50V
Ic=100mA
Ig=10mA
Vce-10V
Ic-50mA
VcE=10V
Ic-50mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
VcE(sat)
Ahregi
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limiting values ​​
Minimum values ​​
Maximum values ​​
Initial values ​​
SJ20015—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
Test circuit see Figure A1
Voltage source
Collector-emitter breakdown voltage test circuit diagram AI
A3 Steps
Resistor R, a current limiting resistor, should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the minimum limit value of V(BR>CEo at the specified test current, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was jointly drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Xie Peilan, and Zhu Chenglin. Planned project: B91023.C
3DG130B, D
Low temperature operation
Forward current transfer ratio
Group A4
Open circuit output capacitance
Characteristic frequency
3DG130A, B
3DG130C, D
Power gain
3DG130A, B
3DG130C, D
Group A5, A6 and A7
Not applicable
SJ20015--92
Continued Table 1 Group A Test
GB4587
VcE10V
Ic=50m A
Vcg=ioV
Ic-300mA
Pulse method (see 4.5.1)
le=100mA
In—10mA
Ic=100mA
In=10mA
Ta=+150℃
Emitter-base open
Vcn-30V
Vcn50V
TA--55C
Vcn-10V
Ic=50mA
2.11.3Vc=10V,1g0
f-IMHz
2. 11.2Vc-10V,Ic-50mA
f-100MHz
Vce-10V
le50mA
VcE(at)
VBE(sat)
Limit value
Minimum value
Maximum value
Inspection or test
Group B1
Solderability
Durability of marking
Group B2
Thermal shock (temperature cycle)
a. Fine leak detection
b. Rough leak detection
Final test:
Group B3
Steady-state working life Life
Final test:
B4 group
Open cap internal visual inspection
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test:
SJ20015-—92
Table 2B group inspection
GJB128
See Table 4. Steps 1, 3 and 4
Vcn=20V,Pot=700mW
TA=25±3℃
It is not allowed to add heat sink or strong air cooling to the device. See Table 4, steps 2 and 5.
Visual inspection standard is as designed during identification
TA-200℃
See Table 4, steps 2 and 5.
One device per batch, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Fine leak detection
b. Rough leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C Group 4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
SJ20015--92
Table 3 Group C test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA=25±3C.Vc=20V
Ptot=700mW||tt ||It is not allowed to add heat sink to the device
or force air cooling
See Table 4, steps 2 and 5
Enter-10
Inspection or test
Collector-base cut-off current
3DG130A, C
3DG130B, D
Collector-base cut-off current
3DG130A.C
3DG130B, D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20015—92||tt| |Table 4 Final test for Group B and Group C
GB4587
Emitter-base open circuit
Vea-30V
VcB=50V
Emitter-base open circuit
VcB-30V
Vcn=50V
Ic=100mA
Ig=10mA
Vce-10V
Ic-50mA
VcE=10V
Ic-50mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
VcE(sat)
Ahregi
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limiting values ​​
Minimum values ​​
Maximum values ​​
Initial values ​​
SJ20015—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
Test circuit see Figure A1
Voltage source
Collector-emitter breakdown voltage test circuit diagram AI
A3 Steps
Resistor R, a current limiting resistor, should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the minimum limit value of V(BR>CEo at the specified test current, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was jointly drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Xie Peilan, and Zhu Chenglin. Planned project: B91023.Pot=700mW
TA=25±3℃
It is not allowed to add heat sink or strong air cooling to the device. See Table 4, steps 2 and 5.
Visual inspection standard is based on the design during the appraisal
TA-200℃
See Table 4, steps 2 and 5.
One device per batch, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Rough leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C Group 4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
SJ20015--92
Table 3 Group C test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA=25±3C.Vc=20V
Ptot=700mW||tt ||It is not allowed to add heat sink to the device
or force air cooling
See Table 4, steps 2 and 5
Enter-10
Inspection or test
Collector-base cut-off current
3DG130A, C
3DG130B, D
Collector-base cut-off current
3DG130A.C
3DG130B, D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20015—92||tt| |Table 4 Final test for Group B and Group C
GB4587
Emitter-base open circuit
Vea-30V
VcB=50V
Emitter-base open circuit
VcB-30V
Vcn=50V
Ic=100mA
Ig=10mA
Vce-10V
Ic-50mA
VcE=10V
Ic-50mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
VcE(sat)
Ahregi
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limiting values ​​
Minimum values ​​
Maximum values ​​
Initial values ​​
SJ20015—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
Test circuit see Figure A1
Voltage source
Collector-emitter breakdown voltage test circuit diagram AI
A3 Steps
Resistor R, a current limiting resistor, should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the minimum limit value of V(BR>CEo at the specified test current, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was jointly drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Xie Peilan, and Zhu Chenglin. Planned project: B91023.Pot=700mW
TA=25±3℃
It is not allowed to add heat sink or strong air cooling to the device. See Table 4, steps 2 and 5.
Visual inspection standard is based on the design during the appraisal
TA-200℃
See Table 4, steps 2 and 5.
One device per batch, 0 failure
20(C=0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Rough leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C Group 4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
SJ20015--92
Table 3 Group C test
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
TA=25±3C.Vc=20V
Ptot=700mW||tt ||It is not allowed to add heat sink to the device
or force air cooling
See Table 4, steps 2 and 5
Enter-10
Inspection or test
Collector-base cut-off current
3DG130A, C
3DG130B, D
Collector-base cut-off current
3DG130A.C
3DG130B, D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ20015—92||tt| |Table 4 Final test for Group B and Group C
GB4587
Emitter-base open circuit
Vea-30V
VcB=50V
Emitter-base open circuit
VcB-30V
Vcn=50V
Ic=100mA
Ig=10mA
Vce-10V
Ic-50mA
VcE=10V
Ic-50mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
VcE(sat)
Ahregi
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limiting values ​​
Minimum values ​​
Maximum values ​​
Initial values ​​
SJ20015—92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
Test circuit see Figure A1
Voltage source
Collector-emitter breakdown voltage test circuit diagram AI
A3 Steps
Resistor R, a current limiting resistor, should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the minimum limit value of V(BR>CEo at the specified test current, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was jointly drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Xie Peilan, and Zhu Chenglin. Planned project: B91023.
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