SJ 20756-1999 Application Guide for Structural Similarity of Discrete Semiconductor Devices
Some standard content:
Guideline for application of structurally similarity of discrete semiconductor devieesPublished on November 10, 1999
Implemented on December 1, 1999
Approved by the Ministry of Information Industry of the People's Republic of China 1 Scope
1.1 Subject content
1.2 Scope of application
1.3 Purpose of application
2 Referenced documents
3 Requirements
General requirements
3.2 Detailed requirements
4 Application of structural similarity in identification extension 5 Rules for distinguishing structurally similar devices...
6 Sampling examples of structurally similar devices
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1 Scope
Guideline for application of structurally similarity of discrete semiconductor devices, military standard for electronics industry of the People's Republic of China 1.1 Subject content
SJ 20756—1999
This guide provides guidance for the application of structural similarity in GJB33A--97. "General Specification for Discrete Semiconductor Devices". 1.2 Scope of application
This guide applies to the identification (including identification extension) and quality consistency inspection of military semiconductor discrete devices (hereinafter referred to as devices) with similar structures.
1.3 Application of self-
Reducing the number of inspection batches that structurally similar devices should undergo testing. 2 Referenced documents
GJB33A—97 General Specification for Discrete Semiconductor Devices 3 Requirements
3.1—General requirements
3.1.1 The use of this guide must be based on the premise of not reducing the level of product quality assurance and strictly implementing the principles specified in this guide.
3.1.2 As structurally similar devices, they should meet the judgment rules specified in this guide for each inspection group. 3.1.3 For devices recommended as a combination of structural similarity, the device model, batch and batch size (or aging) represented by each group shall be determined in a document before sampling inspection, and implemented after approval by the relevant competent authorities. For certified products, it shall be implemented after approval by the appraisal agency before appraisal inspection. The above documents shall be filed with the standardization agency. 3.2 Detailed requirements
3.2.1 Basic principles
For the structurally similar devices combined together, the inspection results of a group of samples randomly selected from an inspection group are valid for the other types of devices represented by the group of samples. That is, if the inspection is qualified, the other types of devices represented by the group are qualified; if the inspection is unqualified, the other types of devices represented by the group are unqualified: 3.2.2 Voluntariness principle
Whether the structurally similar devices that meet the judgment rules in Table 1 are combined for inspection shall be decided by the contractor. The contractor has the right to sample and inspect some or all types of devices in the structurally similar devices separately. 3.2.3 The same principle of quality control
The Ministry of Information Industry of the People's Republic of China issued on November 10, 1999 and implemented on December 1, 1999
SJ20756—1999
The devices that are combined together for inspection based on structural similarity must be products produced on the same production line, and the material quality requirements, production process control and inspection requirements of different types of devices should be basically the same.
3.2.4 The principle of strictness
When inspecting similar structural devices that can be combined together, the principle of strictness should be followed, that is, samples should be drawn from the device models that may have the greatest risk of failure for inspection. For example: When measuring the characteristic frequency of transistors divided by bins, the transistor with the smallest HF in the group should be inspected: When inspecting devices of different voltage series, the devices with the highest and lowest voltages should be inspected. 3.2.5 Rotation principle
After the devices with the greatest risk of failure have passed the inspection according to 3.2.4, the batches submitted for inspection and the subsequent periodic inspections shall still follow the strict principle to extract the devices of the models that have not been inspected, so as to ensure the rotation of all device models.
3.2.6 Multi-model combination regulations
For each group of destructive tests, if there is no obvious difference in the risk of failure, a group of samples that meet the requirements of the sampling plan can be extracted from the different models of devices that meet the rules for distinguishing devices with similar structures to conduct inspection of a certain group. Its inspection conditions and limit values shall be consistent with the requirements of the device model. 3.2.7 Provisions in case of inconsistency
When the inspection content of the inspection group is inconsistent with the provisions of GJB33A, the discrimination rules shall be determined by referring to the requirements for structural similarity of the same inspection content in Table 1
3.2.8 Provisions for other inspection groups
Unless otherwise specified, other inspection groups not listed in the discrimination rules of this guideline shall be deemed to be non-replaceable for the inspection of such groups, and separate samples shall be taken for inspection. 4 Application of structural similarity in identification extension The application of structural similarity in identification extension shall be in accordance with the provisions of 4.5.2.5 of GJB33A and meet the requirements of Table 1. 5 Discrimination rules for structurally similar devices
The discrimination rules for structurally similar devices are shown in Table 1. 12-
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Applicable grades
All grades
JP, JT, JCT
JP, JTJCT
Metal grade
JP, JT, JCT
SJ20756-1999
Table 1 Rules for distinguishing components with similar structures
Test contents
DC (static) test at 25 ℃
DC (static) test at the highest rated operating temperature and the lowest rated operating temperature25 °C dynamic test
Safe operating area (for power transistors)
or current derating curve (for diodes or rectifiers)
Surge current
Selected static and dynamic tests
Physical dimensions
Solderability
Solvent resistance
Solderability
Solvent resistance
Physical dimensions
Temperature cycle (air-to-air)
Open-cap internal visual design inspection
Scanning electron microscope
Bond strength
Chip adhesion strength
Temperature cycle (air-to-air)
Thermal shock (liquid-to-liquid)
Open internal visual design inspection
High temperature life
Constant acceleration
PIND (particle impact noise inspection)
Discrimination requirements
Devices with the same design, same process, same material requirements, and the same test conditions and limit values (specified by detailed specifications).
Same shell and other components and packaging process, same lead-out terminal plating materials and processes, same marking materials and printing methods, and the same shell and tube bond coating materials, and basically the same device back-end assembly process. Alternate production lines, same shell and tube components and packaging process, same plating materials and processes, marking materials and printing methods, and the same device back-end assembly process. Have basically the same internal structure and basically the same chip design and process, but allow different material doping concentrations, junction depths, lithography patterns and no more than 1:2 chip area difference.
Applicable grade
All grades
JP, JT, JCT
All grades
SJ 20756-1999
Continued Table 1
Inspection content
Thermal shock (liquid-to-liquid)
Lead strength
Appearance inspection
Frequency dynamic
Constant acceleration
Temperature cycle (air-to-air)
Low pressure
Intermittent working life
Thermal shock (liquid-to-liquid)
Acceleration steady-state working life
Bond strength
Steady-state or intermittent working life or steady-state current blocking life| |tt||Bond strength
Steady-state or intermittent working life or blocking life Dynamic AC working life or steady-state intermittent working life or steady-state blocking life
Destructive physical analysis
6 Sampling examples of structurally similar devices
Sampling examples of structurally similar devices are as follows:
Example A:
Devices involved in A1
CS0529A GaAs microwave power field effect transistor: CS0529B GaAs microwave power field effect transistor: CS0530 GaAs microwave power field effect transistor: CS0531 GaAs microwave power field effect transistor: CS0532 GaAs microwave power field effect transistor; WP43 Si PIN diode.
General Specification for A2 Implementation
General Specification for GJB33A Discrete Semiconductor Devices
Judgment Requirements
Same production line, same tube and shell components and packaging process, same plating materials and process, marking materials and printing methods, and same device back-end assembly process. Have basically the same internal structure and basically the same chip design and process, but allow different material doping concentrations, junction depths, photolithography patterns and chip area differences not exceeding 1:2.
Same design, same process, same material requirements, or devices of different voltage series composed only of different material doping concentrations and junction depths.
The devices produced are of the same quality grade (JP, JT or JCT grade). -4-
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A3 Detailed specifications involved
SJ 20756—1999
SJ50033.52—94CS0529 type GaAs microwave power field effect transistor detailed specifications SJ50033.53—94CS0530, CS0531 type GaAs microwave power field effect transistor detailed specifications SJ50033.54—94CS0532 type GaAs microwave power field effect transistor detailed specifications; Q/UD20327—94WP43 type high power PIN diode detailed specifications. A4 Device design and process description
A4.1 The six types of devices all use the same package, and the enterprise model is C406. The manufacture of tube shells and other parts and the sealing of devices are all carried out on the same tube shell packaging line. The raw material requirements, process control and inspection standards implemented are the same. These devices are printed on the same equipment with the same materials and strict printing marks. A4.2 The five types of GaAs field effect transistors are manufactured on the same 2-inch GaAs device production line according to the same process and quality control requirements. The device unit cell design is the same. GS0529A and CS0S29B are single cells, CS0530 and CS0531 are double cells, and CS0532 is a quadruple cell. Each device is composed of a single chip. The chip area ratio is the same as the cell number ratio, which is 1:2:4.
A4.3WP43 type SiPIN diode is manufactured on a 3-inch Si diode production line. A5 Main characteristics of the device
A5.1 CS0529A and CS0529B type devices have the same design and are divided into two types only because the microwave characteristics are tested at different frequencies.
A5.2 CS0530 and CS0531 type devices have the same design and are divided into two types only because the measured microwave output power and gain are different.
A5.3 The main characteristics of each device are shown in Table 2 and Table 3. Main characteristics of each device in the example in Table 2
CS0529A
CS0529B
CS0530
CS0531
CS0532
150~400
250~-700
500~1400
YGstof)
Rcthij-e
(GHz)）
Main characteristics of high-power PIN diode in the example in Table 3 Yiski
A6 Sampling combination
Po(idB)
Gp(laB)
The combination method of sampling inspection for each inspection group is shown in Table 4. The letters in the batch sample combination type in the table have the following meanings: A - Each model is individually sampled for inspection. SJ 20756-1999
B - A group of samples is selected from CS0529A or CS0529B devices to represent these two models of devices for inspection:
A group of samples is selected from CS0530 or CS0531 devices to represent these two models of devices for inspection:
A group of samples is selected from CS0S32 devices to represent these two models of devices for inspection:A group of samples is selected from WP43 devices to represent these six models for inspection. C - A group of samples is selected from one of the six models to represent the six models of devices for inspection, and a group of samples is selected from CS0530 or CS0531 to represent CS0529A, CS0529B, CS0530CS0531 and CS0532 devices for inspection; a group of samples is selected from WP43 devices to represent these six models for inspection. Table 4 Composition of sampling inspection for each inspection group
Visual inspection and mechanical inspection
Inspection content
DC (static) test at 25°C
DC (static) test at maximum and minimum rated operating temperaturesDynamic (micro-test) test at 25°C
Solderability
Solvent resistance
Temperature cycle (air-air)
Thermal shock (liquid-liquid)
End point test
Steady-state working life
End point test
Bond strength
Visual inspection inside the open cap||t t||High temperature life
End point test
Constant acceleration
End point test
Physical dimensions
Thermal shock (liquid-liquid)
Lead strength
Appearance inspection
End point test
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Sampling combination method
Example B:
Frequency jitter
Constant acceleration
End point test
Steady-state working life
End point test
See Table 5 for sampling inspection of each inspection group. bzxZ.net
SJ 20756--1999
Continued Table 4
Test contents
Table 5 Device models that can be included in the sampling test of each test group Applicable levels
All levels
JP, FT, JCT
Test contents
Self-test and mechanical test
DC (static) test at 25°C
DC (static) test at the highest rated operating temperature
and the lowest rated operating temperature
Dynamic test at 25°C
Safe operating area (only for power
transistors) or current Derating curve (only for rectifier diodes or rectifiers) Surge current selection static and dynamic measurement judgment rules Phase design, same process, same material (can be different resistance), and have similar test conditions and main limit values of devices (with detailed specifications, such as: same power consumption Sampling combination method Devices with similar structures Package code is D2-10A 0.25 W, 0.5 W, 1 W glass passivated packaged voltage regulator diodes. Including: BWA50~78, BWB2V4~110.,BWC50~64, BWC100~121. 3W, 5W glass passivated voltage regulating diodes with package code D2-10P. Including: BWD129~149, BWD80~94, 2CW53415379. Metal package transient voltage suppression diodes with package code D2 05D (DO13). Including: YS5629~
5665, YS5636A~6066A,
Applicable grades
3P, JT, JCT
All grades
Inspection content
Physical dimensions
Weldability
Solvent resistance
Weldability
Solvent resistance
Physical dimensions
SJ 20756--1999
Continued Table 5
Judgment rules
Same tube shell,
same components and
same packaging process,
same lead plating
materials and processes,
same marking materials,
printing methods and
same printing substrate coating
devices with similar structures
Glass passivated packaged diodes with package code D2-10A, such as D.3 A,
0.5 A, 1 A, 1.5 A rectifiers and 0.25 W, 0.5 W, 1 W voltage regulating diodes. Including: BZ03, BZ05, BZI, BZG03. BZG05. BZG1, BZU15, 2CZ32. BWA50~78. BWB2V4 -~ 110, BWC100 ~-121, BWC50~64. b. Glass passivated package diodes with package code D2-10B, such as 2A, 3A rectifier diodes and 3W, 5W voltage regulator diodes. Including RZ2, BZ3. BZG2. BZG3. BWD129~149. BWD80~94. 2CW5341~C. Power switch transistors with package code B2-01B (F-1). Including: 3DK104. 3CK104, FH205. Including: 3DK105, 3DK106. Including: CK105, 3CK106, 3DK108. Including: 3DK109.
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Applicable grades
JP, JT, JCT
All grades
SJ20756—1999
Continued Table 5
Inspection contents
Temperature cycle (air-air)
End point test
Visual design inspection inside the cap
Scanning electron microscope
Bond strength
Chip adhesion strength
Temperature cycle (air-air)
Thermal shock (liquid-liquid)
End point test
Visual inspection inside the cap
High temperature life
End point test
Constant acceleration
PIND (particle impact noise inspection
End point test
Temperature cycle Cycle (air-to-air)
Lead strength
Appearance inspection
End point test
Sweep frequency movement
Constant acceleration
End point test
Temperature cycle (air-to-air)
Destructive physical phase separation
[Low pressure
Specialization rules
Having basically the same
structure, the same
production line, the same
tube shell parts and
process, the same
coating materials and
process (for example: basically the same
chip area,
dog rear assembly process).
Structurally similar devices
gold-encapsulated power switch transistors. The package code is B2-01C Type
NPN power transistor. Including:
3DK108.3DK1093DK105,
3DK10G. The package code is B2-01C
Type PNP power transistor. Including:
3CK105, 3CK106
b. Glass passivation package diode. The package code is I2-10A glass passivation
package 0.25 W, 0.5 W, .1 W voltage regulator diode. Including BWAS0~
78.BWB2V4~110.BWC100~
121, BWC50~64, the package code is D210B glass passivation package 3
W, 5 W Voltage regulating diodes. Including: BWD129~149, BWD80~94, 2CW5341~5379. Package code D2-10A glass passivation package 0.3 A, 0.5 A, 1 A, 1.5 A rectifier diodes. Including: BZ03, BZ05, BZ1, BZG03. BZG05.BZG1, 2CZ32, BZU5. C. Metal package rectifier diodes. Package code C1-0IA (D04) includes: YZ6, YZ12, YZG6, Applicable grades JP, JT and JCT All grades SJ 20756-1999 Continued Table 5 Inspection content Steady-state working life or intermittent working life End point test Bonding strength (only for lead or wafer-bonded devices) Steady-state DC blocking life (only for rectifiers) End point test Bonding strength (only for lead or wafer-bonded devices) Steady-state or intermittent working life Or
Blocking life
End point test
Dynamic AC intermittent working life
Or steady-state intermittent working life or
Steady-state positive breaking life
End point test
Description; The supplementary description of the devices involved in the example is as follows: Judgment rules
Devices with the same design, phase
process, same material,
or
similar structure from the same product
The package code is D2-10A glass passivated package 0.3A, 0.5A, 1
A, 15 A rectifier diodes. Including: Different BZ03, BZ05, BZ1; EZG03, P or 1g products derived from BZG05, BZG1, BZU15, 2CN3, 2CN4. b. The package code is D2-10B glass passivation package 2A, 3A rectifier diodes, including: BZ2, BZ3, BZG2, BZG3. c. The package code is D2-10A glass passivation package 0.25W, 0.5W, 1W voltage regulating diodes. Including:
BWA50 ~ 78, BWB2V4 --
110 BWC100 ~ 121
BWC50~64.
d. Package code D2-10B glass passivation package 3W, 5W voltage adjustment diodes. Including: BWD129~
149 BWD80 ~ 94
2CW5341~5379.
e: Package code B2--01C (F
—2) metal package power transistors. Including: 3DK105, 3DK106.
fThe package code is B2-01C (F
-2) metal package power transistor.
Including: 3DK108, 3DK109.
The first category: glass passivation package diffusion table process production of 0.3A1.5A rectifier diode with recovery time and without recovery time, the package code is D2-10A, they have the same package, the same size, the same process and the same chip size, produced on the same production line, the main parameters are as follows: - 10 -
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