This standard applies to electronic-grade oxygen used in the production process of semiconductor discrete devices and integrated circuits. According to its use requirements, electronic-grade oxygen is divided into two levels, code-named: Electronic Grade I oxygen code: DZO2-Ⅰ; Grade II argon code: DZO2- Ⅱ SJ 2796-1987 Electronic-Grade Oxygen SJ2796-1987 Standard download decompression password: www.bzxz.net
This standard applies to electronic-grade oxygen used in the production process of semiconductor discrete devices and integrated circuits. According to its use requirements, electronic-grade oxygen is divided into two levels, code-named: Electronic Grade I oxygen code: DZO2-Ⅰ; Grade II argon code: DZO2- Ⅱ

Standard of the Ministry of Electronic Industry of the People's Republic of China Electronic Grade Oxygen
SJ2796-87
This standard applies to electronic grade oxygen used in the production process of semiconductor discrete devices and integrated circuits. According to its use requirements, electronic grade oxygen is divided into two levels: code: electronic grade I code: DzO2-I
electronic grade II code: DZO-1.
Technical requirements
1.1 Electronic grade oxygen shall meet the requirements in Table 1, 1 Electronic grade oxygen technical standard
Indicator name
Natural content,
Alkane content, ppm
Alkane content, ppm
Carbon dioxide content, 12-14-carbon content, ppm≤
Water content, PPm=
Range life,
State Academic Example
Applied to large-scale and super-large-scale
model construction or circuits and their related
common circuits (group components)
Light chemical, Beijing Gas Company
Note, table! The Chinese and English contents are both volume ratios, issued by the Ministry of Electronics Industry on May 18, 1987, 3 <20.5μm) (parts) produced by Xuqi Laolu (stepping parts), plasma manufacturers, etc., implemented on October 1, 1988, $J2796-87, 1.2 The content of electronic grade oxygen (C oxygen) should be calculated using the following formula: C = 1 00%-≤C
Wherein, C to "electronic grade oxygen volume percentage: C case
Bin test method
frame volume percentage.
2.1 The content of oxygen in the sub-grade and the impurities in oxygen shall be tested according to the method specified in Table 2. Test method for electronic grade single-combustible gas and its impurities in oxygen Bag 2
Deep penetration and
one and two acyl
two acyl
standard test method standard GB9903-a3
SJ2807-87
SJ 2A51-?
SJ 28h1-87
SI2542-87
SI 2703-87
SJ 2798-87
Note, 0,3 μI or less is the specific secretion standard, 3 test rules
Test method name
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Method for the determination of moisture content in electronic grade gas
Daytime dew point
Method for the determination of condensate in electronic grade gas
Light scattering method
3.1 The quality inspection department of the electronic grade oxygen gas user unit shall conduct regular inspections according to the technical indicators and shall comply with the provisions of this standard. 3.2 The inspection (joint sample) point of electronic grade oxygen shall be located in the pipe section of the gas-using equipment of the purification device. See the figure below: 2
$J2796—87
Inspection point
Figure Location of inspection (sampling) point
Gas-using equipment
When the gas source before the inspection point is changed, the various indicators of items 1 to 6 in Table I must be inspected and shall comply with the provisions of 3.3
in this standard.
3.4 ​​The indicators 4 and 6 in the inspection table after replacement and maintenance of the pipelines, pipe fittings and filters of the gas purification equipment should comply with the provisions of this standard.
3.5 The metal pipes used between the inspection instruments and the inspection points should be hard-wired. The pipes should be as short as possible and should not have leakage
and second pollution.
Additional instructions:
This standard was proposed by the Clean Technology Society of the Chinese Institute of Electronics and sponsored by the Standardization and Chemical Research Institute of the Ministry of Electronics Industry. This standard was drafted and revised by Lin Yaoze of the 24th Institute of the Ministry of Electronics Industry, Zhao Changchun of the Standardization Research Institute of the Ministry of Electronics Industry, and Zhou Dinghua of the Beijing Semiconductor Device Test Center. 3
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