title>Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK103 - SJ 20056-1992 - Chinese standardNet - bzxz.net
Home > SJ > Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK103
Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK103
Basic Information
Standard ID:
SJ 20056-1992
Standard Name:Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK103
This specification specifies the detailed requirements for 3DK1O3 type NPN silicon low power switch quality transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices". SJ 20056-1992 Semiconductor Discrete Devices 3DK103 Type NPN Silicon Low Power Switch Transistor Detailed Specification SJ20056-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3DK1O3 type NPN silicon low power switch quality transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices".
GB 4587-1984 Test methods for bipolar transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General Specification for Discrete Semiconductor Devices
GJB 128-1986 Test methods for discrete semiconductor devices
Some standard content:
1 Scope People's Republic of China Electronic Industry Military Standard Semiconductor Discrete Devices 3DK103 Type NPN Silicon Low Power Switching Transistor Detailed Specification Semicunduelor discrete drierDelail speciricat Eun tor siliron NPNlowpowerswitchingtransistor nftype3nk103 1.1 Subject content SI2005692 This specification specifies the detailed requirements for 3DK103 type NPN silicon low power switching transistor (hereinafter referred to as device). Each device provides three levels of production assurance (GP, GT and GCT) in accordance with the provisions of GTB33 General Specification for Semiconductor Discrete Devices. China Electronics Industry Corporation issued 1393-05-01 on November 19, 1992 for implementation 1.2 Dimensions SJ 20056—S2 Dimensions shall comply with A3-01B type in GB7581 "Dimensions of semiconductor public devices" and the following provisions, see Figure I Terminal absorption, 1. Emitter Dimensions in Figure 1 3. Collector TKAONKAca 1.3 Maximum ratings 3DK1033 3DK103C Ta=25r Te25℃ SJ 20356-92 Note: 1) When Ta>25℃, derate at a rate of 1.7mW/s. 2) When T>25℃, derate at a rate of 6.3mW/s. 1.4 Main electrical characteristics (T-25℃) tr(Ver=1V) 3DK103B 3DK103C 3DK109B 3DK103E 3DK103C 2 Reference documents Maximum value Ves-20V le- 20mA f=100MHz General Diandao Ie- 30m:A Is=3nA Minimum value Maximum value l:=10mA Ball F-_MHz Veh=10V Minimum value· Maximum value I:--50nA In=smA Mouse GB4587-84 Bipolar transistor test method authorization GB7581--87 Semiconductor discrete device dimensions GJB33—85 Semiconductor discrete device general specification GJB128—86 Semiconductor discrete device test method Vaio e= 30mA Minimum value Maximum value le=30mA Ja=3mA Minimum value Maximum value H= 3CmA Maximum value —65~~ +205 fe=50mA Maximum value Minimum value le=33mA Im= g= 3nA Minimum value Maximum value Vurcan Ic=50mA In= 5mA Minimum value Maximum value 3 Requirements 3.1 Detailed requirements SJ 20056—92 All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions The design, structure and dimensions of the device shall be in accordance with the provisions of B33 and this specification. 3.2.1 Lead terminal material and coating The lead terminal material shall be ferrite. The lead terminal surface coating shall be chain gold, tin plating or immersion tin. The selection of lead terminal material and coating requirements or other requirements shall be clearly specified in the contract or order (see Section 6). 3.3 Marking The marking of the device shall be in accordance with the provisions of GJB33. 4 Quality assurance provisions 4.1 Sampling and inspection Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Appraisal inspection Appraisal inspection shall be in accordance with the provisions of GJB33. 4.3 Screening (GT and GCT only) The following tests shall be carried out in accordance with Table 2 of CJB33 and the provisions of this specification. The following tests shall be carried out in accordance with Table 1 of this specification. Devices exceeding the specified limit values shall not be accepted. (GJB 33 Table 2) 7. Intermediate parameter test &Power aging 9. Postnasal condensation test 4.3.1 Power aging test conditions TA—25±3C Van15V(3DK103B) Ve=25V(3DK1C3C) Pur 3comW Note: It is not allowed to add a heat sink or strong air cooling to the device. 4.4 Quality consistency inspection au hreg See 4.3.1 Test or experiment Cloud specification table 1 A2 group; 2 ratio-100% of the initial value or 2℃mA, the larger of 25 doses of initial value ± 20% Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4. 4.1 Group A inspection TKAONKAca SJ 20056—92 Group A inspection shall be carried out in accordance with the provisions of GJB33 and table 1 of this specification. 4.4. 2 Group 8 inspection Group B inspection shall be carried out in accordance with the provisions of GJB33 and table 2 of this specification. The final test and the change (A) requirement shall be carried out according to the steps in Table 4 of this specification. 4.4.3 Group C inspection Group C inspection shall be carried out according to the provisions of GJB33 and Table 3 of this specification. The final test and the change (A) requirement shall be carried out according to the steps in Table 4 of this specification. 4.5 Inspection and test methods Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following short definitions: 4. 5. 1 Pulse test The pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB128. Table 1 Group A Inspection Inspection or Test Group A1 Appearance and Machine Inspection Group A2 Collector-Base Breakdown Voltage 3DK103B 3DK103 Emitter-Base Breakdown Voltage Emitter-Emitter Breakdown Voltage 3DK103B 3DK103C Collector-Emitter Breakdown Voltage||t t||3DK103B 3DK103C Collector-base cutoff current 3DK103B 3DK103C Emitter-base cutoff current Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Collector-emitter voltage drop GJE128 2. 9. 2. 2 This specification This specification Appendix A G34587 Emitter-base open circuit Emitter-base open circuit Tk=10μA Emitter-base open circuit Ir-100μA Emitter-base open circuit Emitter-base open circuit Veg-50V Collector-base circuit V=1V, J=1mA Vce --1 V de -- 10mA Vc=1VI= 30mA Yc -1V.Ic - 50mA 1c—30mA3mA ViBAce Limit value Minimum value maximum value VeHRXEOI Vurinil Inspection or test Collector-emitter saturation voltage drop Base-emitter voltage drop Base-emitter saturation voltage drop A3 Grouping High temperature operation, Electrode-base cut-off current DK103B 3DK103C Embedded temperature operation: Positive current transfer ratio A4 Group Characteristic frequency Open circuit output capacitance Saturation turn-on time Saturation turn-off time Group A5, A6 and AT Not applicable SJ.20056—92 Continued Table 1 G13 4587 Ic- 50mA I-5mA Ic=30mA Te=50mAJ, 5mA TA=+150℃ Emitter-base switching Vea30V Via-50V TA=55C Vα-1V,Ie - 30mA Vo--10V,Ie-- 20mA. =-100MHz VG-10V.le=-0 f=1MHz tc - 30mA,In- 3mA Ic=- 30mA,1 = I 2- 3mA VeEcut Vsecam Limit value Minimum valueMaximum value TTKAONKACa- Inspection or test B1 group Weldability Durability of marking B2 group Heat shock (temperature cycle) a. Detailed inspection b. Torsion inspection Final test: B3 group Working life Final test, BA group Visual inspection inside the opening (Design verification) Joint strength B5 group Not applicable B6 Grouping High life (deep working) Final test! SJ 20056—-92 Table 2 Group B test GFB128 See Table 1, Step 1: 3 and 4 Ven *-10V Pm -- 300mW =25±3℃ Not allowed to add heat sink or forced air cooling to the device See Table 1 Step 2 and 5 Design according to standard according to setting time TA200 C See Table 4, Steps 2 and 6 0.01 devices per batch 20(C=0) Inspection or test C1 Group Dimensions C2 Group Thermal shock (glass stress)wwW.bzxz.Net Lead-out strength a. Detailed inspection b. Rough inspection Comprehensive readiness/humidity cycle test Appearance and mechanical inspection Final test ca Group Variable acceleration Constant acceleration Final test: C4 Group Salt gas (when applicable) C5 Group Not applicable C6 Grouping Steady-state working life Final test: SJ 20056--.92 Table 3 C group test See Figure 1 Test condition A Test condition E See Table 4. Mega frequency 13 and 4 See Table 4. Step Shun 1.3 and 4 .Ta-25±3℃ Vtr-10V Piu = 300mW Not allowed to add heat sink or Strong windshield Comparison with Table 4, steps 2 and 6 Limit value Minimum value Maximum value TKAONKAca Inspection or test Electrode-base cutoff battery 3DK103B 3DK10SC Collector-base cutoff current 3DK103B 3DK103C Electrode-emitter voltage drop Extension transfer ratio Forward transfer ratio SJ 20056—92 Final test of group B and group C Emitter-base open circuit Vea= 30V Ven= 50V Emitter-base rising circuit Ves=30V Vta= 5uV Te30mA Iμ=3mA Te - 30mA Te=30mA Test: 1) For this test, devices exceeding the limit value of group A should not be connected. 5 Delivery preparation Packing requirements should be in accordance with the provisions of GJB33. 6 Notes The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values minimum values initial values maximum values S1 20056--92 Reduction A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit The test circuit is shown in Figure A1. Voltage source Figure A1Channel-emitter breakdown voltage test circuit A3 Steps The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013. rrrKAoNiKAca1 = I 2- 3mA VeEcut Vsecam Limiting value Minimum valueMaximum value TTKAONKACa- Inspection or test B1 group Solderability Durability of marking B2 group Thermal shock (temperature cycle) a. Detailed inspection b. Torsion inspection Final test: B3 group Working life Final test, BA group Visual inspection inside the opening (Design verification) Joint strength B5 group Not applicable B6 Grouping High life (deep working) Final test! SJ 20056—-92 Table 2 Group B test GFB128 See Table 1, Step 1: 3 and 4 Ven *-10V Pm -- 300mW =25±3℃ Not allowed to add heat sink or forced air cooling to the device See Table 1 Step 2 and 5 Design according to standard according to setting time TA200 C See Table 4, Steps 2 and 6 0.01 devices per batch 20(C=0) Inspection or test C1 Group Dimensions C2 Group Thermal shock (glass stress) Lead-out strength a. Detailed inspection b. Rough inspection Comprehensive readiness/humidity cycle test Appearance and mechanical inspection Final test ca Group Variable acceleration Constant acceleration Final test: C4 Group Salt gas (when applicable) C5 Group Not applicable C6 Grouping Steady-state working life Final test: SJ 20056--.92 Table 3 C group test See Figure 1 Test condition A Test condition E See Table 4. Mega frequency 13 and 4 See Table 4. Step Shun 1.3 and 4 .Ta-25±3℃ Vtr-10V Piu = 300mW Not allowed to add heat sink or Strong windshield Comparison with Table 4, steps 2 and 6 Limit value Minimum value Maximum value TKAONKAca Inspection or test Electrode-base cutoff battery 3DK103B 3DK10SC Collector-base cutoff current 3DK103B 3DK103C Electrode-emitter voltage drop Extension transfer ratio Forward transfer ratio SJ 20056—92 Final test of group B and group C Emitter-base open circuit Vea= 30V Ven= 50V Emitter-base rising circuit Ves=30V Vta= 5uV Te30mA Iμ=3mA Te - 30mA Te=30mA Test: 1) For this test, devices exceeding the limit value of group A should not be connected. 5 Delivery preparation Packing requirements should be in accordance with the provisions of GJB33. 6 Notes The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values minimum values initial values maximum values S1 20056--92 Reduction A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit The test circuit is shown in Figure A1. Voltage source Figure A1Channel-emitter breakdown voltage test circuit A3 Steps The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Industry Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013. rrrKAoNiKAca1 = I 2- 3mA VeEcut Vsecam Limiting value Minimum valueMaximum value TTKAONKACa- Inspection or test B1 group Solderability Durability of marking B2 group Thermal shock (temperature cycle) a. Detailed inspection b. Torsion inspection Final test: B3 group Working life Final test, BA group Visual inspection inside the opening (Design verification) Joint strength B5 group Not applicable B6 Grouping High life (deep working) Final test! SJ 20056—-92 Table 2 Group B test GFB128 See Table 1, Step 1: 3 and 4 Ven *-10V Pm -- 300mW =25±3℃ Not allowed to add heat sink or forced air cooling to the device See Table 1 Step 2 and 5 Design according to standard according to setting time TA200 C See Table 4, Steps 2 and 6 0.01 devices per batch 20(C=0) Inspection or test C1 Group Dimensions C2 Group Thermal shock (glass stress) Lead-out strength a. Detailed inspection b. Rough inspection Comprehensive readiness/humidity cycle test Appearance and mechanical inspection Final test ca Group Variable acceleration Constant acceleration Final test: C4 Group Salt gas (when applicable) C5 Group Not applicable C6 Grouping Steady-state working life Final test: SJ 20056--.92 Table 3 C group test See Figure 1 Test condition A Test condition E See Table 4. Mega frequency 13 and 4 See Table 4. Step Shun 1.3 and 4 .Ta-25±3℃ Vtr-10V Piu = 300mW Not allowed to add heat sink or Strong windshield Comparison with Table 4, steps 2 and 6 Limit value Minimum value Maximum value TKAONKAca Inspection or test Electrode-base cutoff battery 3DK103B 3DK10SC Collector-base cutoff current 3DK103B 3DK103C Electrode-emitter voltage drop Extension transfer ratio Forward transfer ratio SJ 20056—92 Final test of group B and group C Emitter-base open circuit Vea= 30V Ven= 50V Emitter-base rising circuit Ves=30V Vta= 5uV Te30mA Iμ=3mA Te - 30mA Te=30mA Test: 1) For this test, devices exceeding the limit value of group A should not be connected. 5 Delivery preparation Packing requirements should be in accordance with the provisions of GJB33. 6 Notes The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values minimum values initial values maximum values S1 20056--92 Reduction A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit The test circuit is shown in Figure A1. Voltage source Figure A1Channel-emitter breakdown voltage test circuit A3 Steps The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Industry Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013. rrrKAoNiKAcaSteps 2 and 6 Limiting values Minimum maximum values TKAONKAca Inspection or test Collector-base cutoff battery 3DK103B 3DK10SC Collector-base cutoff current 3DK103B 3DK103C Collector-emitter voltage drop Transmission ratio Forward transmission ratio SJ 20056—92 Final test for Group 4B and Group C Emitter-base open circuit Vea= 30V Ven= 50V Emitter-base rising circuit Ves=30V Vta= 5uV Te30mA Iμ=3mA Te - 30mA Te=30mA Test: 1) For this test, devices exceeding the limit value of Group A should not be connected. 5 Delivery preparation Packing requirements should be in accordance with the provisions of GJB33. 6 Notes The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values minimum values initial values maximum values S1 20056--92 Reduction A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit The test circuit is shown in Figure A1. Voltage source Figure A1Channel-emitter breakdown voltage test circuit A3 Steps The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013. rrrKAoNiKAcaSteps 2 and 6 Limiting values Minimum maximum values TKAONKAca Inspection or test Collector-base cutoff battery 3DK103B 3DK10SC Collector-base cutoff current 3DK103B 3DK103C Collector-emitter voltage drop Transmission ratio Forward transmission ratio SJ 20056—92 Final test for Group 4B and Group C Emitter-base open circuit Vea= 30V Ven= 50V Emitter-base rising circuit Ves=30V Vta= 5uV Te30mA Iμ=3mA Te - 30mA Te=30mA Test: 1) For this test, devices exceeding the limit value of Group A should not be connected. 5 Delivery preparation Packing requirements should be in accordance with the provisions of GJB33. 6 Notes The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values minimum values initial values maximum values S1 20056--92 Reduction A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit The test circuit is shown in Figure A1. Voltage source Figure A1Channel-emitter breakdown voltage test circuit A3 Steps The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013. rrrKAoNiKAca Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.