This specification specifies the detailed requirements for 3DK1O3 type NPN silicon low power switch quality transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices". SJ 20056-1992 Semiconductor Discrete Devices 3DK103 Type NPN Silicon Low Power Switch Transistor Detailed Specification SJ20056-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3DK1O3 type NPN silicon low power switch quality transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices".

GB 4587-1984 Test methods for bipolar transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General Specification for Discrete Semiconductor Devices
GJB 128-1986 Test methods for discrete semiconductor devices

1 Scope
People's Republic of China Electronic Industry Military Standard Semiconductor Discrete Devices
3DK103 Type NPN Silicon Low Power Switching Transistor Detailed Specification
Semicunduelor discrete drierDelail speciricat Eun tor siliron NPNlowpowerswitchingtransistor nftype3nk103 1.1 Subject content
SI2005692
This specification specifies the detailed requirements for 3DK103 type NPN silicon low power switching transistor (hereinafter referred to as device). Each device provides three levels of production assurance (GP, GT and GCT) in accordance with the provisions of GTB33 General Specification for Semiconductor Discrete Devices.
China Electronics Industry Corporation issued 1393-05-01 on November 19, 1992 for implementation
1.2 Dimensions
SJ 20056—S2
Dimensions shall comply with A3-01B type in GB7581 "Dimensions of semiconductor public devices" and the following provisions, see Figure I
Terminal absorption,
1. Emitter
Dimensions in Figure 1
3. Collector
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1.3 Maximum ratings
3DK1033
3DK103C
Ta=25r
Te25℃
SJ 20356-92
Note: 1) When Ta>25℃, derate at a rate of 1.7mW/s. 2) When T>25℃, derate at a rate of 6.3mW/s. 1.4 Main electrical characteristics (T-25℃)
tr(Ver=1V)
3DK103B
3DK103C
3DK109B
3DK103E
3DK103C
2 Reference documents
Maximum value
Ves-20V
le- 20mA
f=100MHz
General
Diandao
Ie- 30m:A
Is=3nA
Minimum value
Maximum value
l:=10mA
Ball
F-_MHz
Veh=10V
Minimum value·
Maximum value
I:--50nA
In=smA
Mouse
GB4587-84 Bipolar transistor test method authorization
GB7581--87 Semiconductor discrete device dimensions GJB33—85 Semiconductor discrete device general specification
GJB128—86 Semiconductor discrete device test method Vaio
e= 30mA
Minimum value
Maximum value
le=30mA
Ja=3mA
Minimum value
Maximum value
H= 3CmA
Maximum value
—65~～ +205
fe=50mA
Maximum value
Minimum value
le=33mA
Im= g= 3nA
Minimum value
Maximum value
Vurcan
Ic=50mA
In= 5mA
Minimum value
Maximum value
3 Requirements
3.1 Detailed requirements
SJ 20056—92
All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions
The design, structure and dimensions of the device shall be in accordance with the provisions of B33 and this specification. 3.2.1 Lead terminal material and coating
The lead terminal material shall be ferrite. The lead terminal surface coating shall be chain gold, tin plating or immersion tin. The selection of lead terminal material and coating requirements or other requirements shall be clearly specified in the contract or order (see Section 6). 3.3 Marking
The marking of the device shall be in accordance with the provisions of GJB33.
4 Quality assurance provisions
4.1 Sampling and inspection
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Appraisal inspection
Appraisal inspection shall be in accordance with the provisions of GJB33.
4.3 Screening (GT and GCT only)
The following tests shall be carried out in accordance with Table 2 of CJB33 and the provisions of this specification. The following tests shall be carried out in accordance with Table 1 of this specification. Devices exceeding the specified limit values ​​shall not be accepted.
(GJB 33 Table 2)
7. Intermediate parameter test
&Power aging
9. Postnasal condensation test
4.3.1 Power aging test conditions
TA—25±3C
Van15V(3DK103B)
Ve=25V(3DK1C3C)
Pur 3comW
Note: It is not allowed to add a heat sink or strong air cooling to the device. 4.4 Quality consistency inspection
au hreg
See 4.3.1
Test or experiment
Cloud specification table 1 A2 group;
2 ratio-100% of the initial value or 2℃mA, the larger of 25 doses of initial value ± 20%
Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4. 4.1 Group A inspection
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SJ 20056—92
Group A inspection shall be carried out in accordance with the provisions of GJB33 and table 1 of this specification. 4.4. 2 Group 8 inspection
Group B inspection shall be carried out in accordance with the provisions of GJB33 and table 2 of this specification. The final test and the change (A) requirement shall be carried out according to the steps in Table 4 of this specification.
4.4.3 Group C inspection
Group C inspection shall be carried out according to the provisions of GJB33 and Table 3 of this specification. The final test and the change (A) requirement shall be carried out according to the steps in Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following short definitions: 4. 5. 1 Pulse test
The pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB128. Table 1 Group A Inspection
Inspection or Test
Group A1
Appearance and Machine Inspection
Group A2
Collector-Base Breakdown Voltage
3DK103B
3DK103
Emitter-Base Breakdown Voltage
Emitter-Emitter Breakdown Voltage
3DK103B
3DK103C
Collector-Emitter Breakdown Voltage||t t||3DK103B
3DK103C
Collector-base cutoff current
3DK103B
3DK103C
Emitter-base cutoff current
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Collector-emitter voltage drop
GJE128
2. 9. 2. 2
This specification
This specification
Appendix A
G34587
Emitter-base open circuit
Emitter-base open circuit
Tk=10μA
Emitter-base open circuit
Ir-100μA
Emitter-base open circuit
Emitter-base open circuit
Veg-50V
Collector-base circuit
V=1V, J=1mA
Vce --1 V de -- 10mA
Vc=1VI= 30mA
Yc -1V.Ic - 50mA
1c—30mA3mA
ViBAce
Limit value
Minimum value maximum value
VeHRXEOI
Vurinil
Inspection or test
Collector-emitter saturation voltage drop
Base-emitter voltage drop
Base-emitter saturation voltage drop
A3 Grouping
High temperature operation,
Electrode-base cut-off current
DK103B
3DK103C
Embedded temperature operation:
Positive current transfer ratio
A4 Group
Characteristic frequency
Open circuit output capacitance
Saturation turn-on time
Saturation turn-off time
Group A5, A6 and AT
Not applicable
SJ.20056—92
Continued Table 1
G13 4587
Ic- 50mA I-5mA
Ic=30mA
Te=50mAJ, 5mA
TA=+150℃
Emitter-base switching
Vea30V
Via-50V
TA=55C
Vα-1V,Ie - 30mA
Vo--10V,Ie-- 20mA.
=-100MHz
VG-10V.le=-0
f=1MHz
tc - 30mA,In- 3mA
Ic=- 30mA,1 = I 2- 3mA
VeEcut
Vsecam
Limit value
Minimum valueMaximum value
TTKAONKACa-
Inspection or test
B1 group
Weldability
Durability of marking
B2 group
Heat shock (temperature cycle)
a. Detailed inspection
b. Torsion inspection
Final test:
B3 group
Working life
Final test,
BA group
Visual inspection inside the opening
(Design verification)
Joint strength
B5 group
Not applicable
B6 Grouping
High life
(deep working)
Final test!
SJ 20056—-92
Table 2 Group B test
GFB128
See Table 1, Step 1: 3 and 4
Ven *-10V Pm -- 300mW
=25±3℃
Not allowed to add heat sink or forced air cooling to the device See Table 1 Step 2 and 5
Design according to standard according to setting time
TA200 C
See Table 4, Steps 2 and 6
0.01 devices per batch
20(C=0)
Inspection or test
C1 Group
Dimensions
C2 Group
Thermal shock (glass stress)wwW.bzxz.Net
Lead-out strength
a. Detailed inspection
b. Rough inspection
Comprehensive readiness/humidity cycle test
Appearance and mechanical inspection
Final test
ca Group
Variable acceleration
Constant acceleration
Final test:
C4 Group
Salt gas (when applicable)
C5 Group
Not applicable
C6 Grouping
Steady-state working life
Final test:
SJ 20056--.92
Table 3 C group test
See Figure 1
Test condition A
Test condition E
See Table 4. Mega frequency 13 and 4
See Table 4. Step Shun 1.3 and 4
.Ta-25±3℃ Vtr-10V
Piu = 300mW
Not allowed to add heat sink or
Strong windshield
Comparison with Table 4, steps 2 and 6
Limit value
Minimum value Maximum value
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Inspection or test
Electrode-base cutoff battery
3DK103B
3DK10SC
Collector-base cutoff current
3DK103B
3DK103C
Electrode-emitter voltage drop
Extension transfer ratio
Forward transfer ratio
SJ 20056—92
Final test of group B and group C
Emitter-base open circuit
Vea= 30V
Ven= 50V
Emitter-base rising circuit
Ves=30V
Vta= 5uV
Te30mA
Iμ=3mA
Te - 30mA
Te=30mA
Test: 1) For this test, devices exceeding the limit value of group A should not be connected. 5 Delivery preparation
Packing requirements should be in accordance with the provisions of GJB33.
6 Notes
The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values
minimum values
initial values
maximum values
S1 20056--92
Reduction A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Figure A1Channel-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013.
rrrKAoNiKAca1 = I 2- 3mA
VeEcut
Vsecam
Limiting value
Minimum valueMaximum value
TTKAONKACa-
Inspection or test
B1 group
Solderability
Durability of marking
B2 group
Thermal shock (temperature cycle)
a. Detailed inspection
b. Torsion inspection
Final test:
B3 group
Working life
Final test,
BA group
Visual inspection inside the opening
(Design verification)
Joint strength
B5 group
Not applicable
B6 Grouping
High life
(deep working)
Final test!
SJ 20056—-92
Table 2 Group B test
GFB128
See Table 1, Step 1: 3 and 4
Ven *-10V Pm -- 300mW
=25±3℃
Not allowed to add heat sink or forced air cooling to the device See Table 1 Step 2 and 5
Design according to standard according to setting time
TA200 C
See Table 4, Steps 2 and 6
0.01 devices per batch
20(C=0)
Inspection or test
C1 Group
Dimensions
C2 Group
Thermal shock (glass stress)
Lead-out strength
a. Detailed inspection
b. Rough inspection
Comprehensive readiness/humidity cycle test
Appearance and mechanical inspection
Final test
ca Group
Variable acceleration
Constant acceleration
Final test:
C4 Group
Salt gas (when applicable)
C5 Group
Not applicable
C6 Grouping
Steady-state working life
Final test:
SJ 20056--.92
Table 3 C group test
See Figure 1
Test condition A
Test condition E
See Table 4. Mega frequency 13 and 4
See Table 4. Step Shun 1.3 and 4
.Ta-25±3℃ Vtr-10V
Piu = 300mW
Not allowed to add heat sink or
Strong windshield
Comparison with Table 4, steps 2 and 6
Limit value
Minimum value Maximum value
TKAONKAca
Inspection or test
Electrode-base cutoff battery
3DK103B
3DK10SC
Collector-base cutoff current
3DK103B
3DK103C
Electrode-emitter voltage drop
Extension transfer ratio
Forward transfer ratio
SJ 20056—92
Final test of group B and group C
Emitter-base open circuit
Vea= 30V
Ven= 50V
Emitter-base rising circuit
Ves=30V
Vta= 5uV
Te30mA
Iμ=3mA
Te - 30mA
Te=30mA
Test: 1) For this test, devices exceeding the limit value of group A should not be connected. 5 Delivery preparation
Packing requirements should be in accordance with the provisions of GJB33.
6 Notes
The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values
minimum values
initial values
maximum values
S1 20056--92
Reduction A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Figure A1Channel-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Industry Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013.
rrrKAoNiKAca1 = I 2- 3mA
VeEcut
Vsecam
Limiting value
Minimum valueMaximum value
TTKAONKACa-
Inspection or test
B1 group
Solderability
Durability of marking
B2 group
Thermal shock (temperature cycle)
a. Detailed inspection
b. Torsion inspection
Final test:
B3 group
Working life
Final test,
BA group
Visual inspection inside the opening
(Design verification)
Joint strength
B5 group
Not applicable
B6 Grouping
High life
(deep working)
Final test!
SJ 20056—-92
Table 2 Group B test
GFB128
See Table 1, Step 1: 3 and 4
Ven *-10V Pm -- 300mW
=25±3℃
Not allowed to add heat sink or forced air cooling to the device See Table 1 Step 2 and 5
Design according to standard according to setting time
TA200 C
See Table 4, Steps 2 and 6
0.01 devices per batch
20(C=0)
Inspection or test
C1 Group
Dimensions
C2 Group
Thermal shock (glass stress)
Lead-out strength
a. Detailed inspection
b. Rough inspection
Comprehensive readiness/humidity cycle test
Appearance and mechanical inspection
Final test
ca Group
Variable acceleration
Constant acceleration
Final test:
C4 Group
Salt gas (when applicable)
C5 Group
Not applicable
C6 Grouping
Steady-state working life
Final test:
SJ 20056--.92
Table 3 C group test
See Figure 1
Test condition A
Test condition E
See Table 4. Mega frequency 13 and 4
See Table 4. Step Shun 1.3 and 4
.Ta-25±3℃ Vtr-10V
Piu = 300mW
Not allowed to add heat sink or
Strong windshield
Comparison with Table 4, steps 2 and 6
Limit value
Minimum value Maximum value
TKAONKAca
Inspection or test
Electrode-base cutoff battery
3DK103B
3DK10SC
Collector-base cutoff current
3DK103B
3DK103C
Electrode-emitter voltage drop
Extension transfer ratio
Forward transfer ratio
SJ 20056—92
Final test of group B and group C
Emitter-base open circuit
Vea= 30V
Ven= 50V
Emitter-base rising circuit
Ves=30V
Vta= 5uV
Te30mA
Iμ=3mA
Te - 30mA
Te=30mA
Test: 1) For this test, devices exceeding the limit value of group A should not be connected. 5 Delivery preparation
Packing requirements should be in accordance with the provisions of GJB33.
6 Notes
The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values
minimum values
initial values
maximum values
S1 20056--92
Reduction A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Figure A1Channel-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Industry Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013.
rrrKAoNiKAcaSteps 2 and 6
Limiting values
Minimum maximum values
TKAONKAca
Inspection or test
Collector-base cutoff battery
3DK103B
3DK10SC
Collector-base cutoff current
3DK103B
3DK103C
Collector-emitter voltage drop
Transmission ratio
Forward transmission ratio
SJ 20056—92
Final test for Group 4B and Group C
Emitter-base open circuit
Vea= 30V
Ven= 50V
Emitter-base rising circuit
Ves=30V
Vta= 5uV
Te30mA
Iμ=3mA
Te - 30mA
Te=30mA
Test: 1) For this test, devices exceeding the limit value of Group A should not be connected. 5 Delivery preparation
Packing requirements should be in accordance with the provisions of GJB33.
6 Notes
The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values
minimum values
initial values
maximum values
S1 20056--92
Reduction A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Figure A1Channel-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013.
rrrKAoNiKAcaSteps 2 and 6
Limiting values
Minimum maximum values
TKAONKAca
Inspection or test
Collector-base cutoff battery
3DK103B
3DK10SC
Collector-base cutoff current
3DK103B
3DK103C
Collector-emitter voltage drop
Transmission ratio
Forward transmission ratio
SJ 20056—92
Final test for Group 4B and Group C
Emitter-base open circuit
Vea= 30V
Ven= 50V
Emitter-base rising circuit
Ves=30V
Vta= 5uV
Te30mA
Iμ=3mA
Te - 30mA
Te=30mA
Test: 1) For this test, devices exceeding the limit value of Group A should not be connected. 5 Delivery preparation
Packing requirements should be in accordance with the provisions of GJB33.
6 Notes
The contract or order shall specify the required termination materials and layers (see 3.2.1), limiting values
minimum values
initial values
maximum values
S1 20056--92
Reduction A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine, under specified conditions, whether the breakdown voltage of a transistor is greater than the specified minimum limit. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Figure A1Channel-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor, R, shall be large enough to prevent excessive current from flowing through the thyristor. Using an ammeter, with the emitter-base open circuit, increase the voltage until the specified source test current is reached. If the voltage applied under the specified test voltage is greater than the minimum limit of VR (ED), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China National Electric Power Corporation and is drafted by China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Chang Gao, Zhu Chenglin, and Xie Peilan. Project code: B01013.
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