This standard is equivalent to IEC 747-8-1984 "Semiconductor devices discrete devices Part 8: Field effect transistors" and its IEC 747-8 first amendment (1991). This standard provides the standards for the following types of field effect transistors: - Type A: Junction gate type; - Type B: Insulated gate depletion type; - Type C: Insulated gate enhancement type. GB/T 4586-1994 Semiconductor devices discrete devices Part 8: Field effect transistors GB/T4586-1994 Standard download decompression password: www.bzxz.net

National Standard of the People's Republic of China
Semiconductor devices Discrete devices
Part 8: Field effect transistors
Semiconductor devices Discrete devicesParl B: Field-effect transistorsGB/T 458694
[EC 747-8—1984
Replaces GB 458G—84
This standard is equivalent to IEC747-81984 "Semiconductor devices Discrete devices Part 8: Field effect transistors" and its IEC747-8 First Amendment (1991)
Chapter 1 General
1 Introduction
Generally, this standard needs to be used with IEC747-1-1983 Semiconductor devices. In IEC747-1, you can find all the following basic information: terminology;
-text symbols;
basic ratings and characteristics,
test methods;
acceptance and reliability.
Discrete devices and integrated circuits Part 1: General provisions" together with the order of each chapter in accordance with the provisions of IEC747-1 Chapter 2.1, 2 Scope
This standard gives the standards for the following types of field effect transistors: A type: junction gate type
-B type: insulated gate depletion type,
C type, insulated gate enhancement type.
3 Types
Since field effect transistors can have
one or more gates, they can be divided into the following types: Field effect transistors
(source, drain, one or more gates) Devices with one or more
P channels
Depletion mode devices
Insulated gate devices
Enhancement mode devices
|Approved by the State Administration of Technical Supervision on December 31, 1994. Devices with one or more channels. |Depletion-type devices. |Insulation tearing device. |Weak-type devices. |Implemented on August 1, 1995. |1 Types of field effect products. |1.1 N-channel field effect transistor. |GB/T 4586--94. |Terms and text symbols. |A field effect transistor with an N-type conductive channel. |1.2 P-channel field effect transistor. |A field effect transistor with a P-type conductive channel. |1.3 Junction gate field effect transistor. |A field effect transistor with one or more gate regions that form a PN junction with the channel. 1.4 Insulated Gate Field Effect Transistor
A field effect transistor having one or more gates electrically insulated from the channel. 1.5 Metal Oxide Semiconductor Field Effect Transistor
A field effect transistor having an insulated gate where the insulating layer between each gate and the channel is an oxide material. 1.6 Depletion Type Field Effect Transistor
A field effect transistor having a significant channel conductivity when the gate-source voltage is zero, and whose channel conductivity can be increased or decreased depending on the polarity of the applied gate-source voltage. 1.7 Enhancement Type Field Effect Transistor
A field effect transistor having essentially zero channel conductivity when the gate-source voltage is zero, and whose channel conductivity can be increased when the applied source voltage polarity is appropriate.
1.8 Triode Field Effect Transistor
A field effect transistor having a gate region, a source region, and a surge region. Note: When mixing does not occur, this term can be shortened to "field effect transistor". 1.9 Quadrupole field effect transistor
A field effect transistor with two independent gate regions, a source region and a drain region. Note: When mixing does not occur, this term can be shortened to "field effect quadrupole". 2 General terms
2.1 Source region of a field-effect transistor source region of a field-effect transistor is a region from which most carriers flow into the channel. 2.2 Drain region of a field-effect transistor is a region from which most carriers flow from the channel into the channel. 2.3 Gate region of a field-effect transistor gate region af a ficld-effect Lransistor The region where the electric field caused by the gate control voltage can act. 2.4 Depletion mode operation depletion mode operation A mode of operation in which the drain current value decreases when the gate-source voltage of a field-effect transistor changes from zero to a certain "finite value". 2.5 Enhancement made operation The mode of operation in which the drain current value increases when the gate-source voltage of a field effect transistor changes from zero to a certain finite value. 2.6 Channel
The thin conductor layer between the source region and the drain region, in which the current is controlled by the gate voltage. 2.7 Substrate
2.7.1 (junction gate field effect transistor) substrate/(insulated gate field effect transistor) substrate A semiconductor material that includes the channel, source and drain and may have non-rectifying contacts. 2.7.2 (thin film field effect transistor) substrate GB/T4586·94
Insulator supporting the source and drain, the primary insulating layer and the semiconductor thin layer. 3 Terms related to ratings and characteristics
Note: When a term has several letter symbols, only the most common one is given. 3.1 "reverse" and "forward" directions Here, "reverse" refers to the direction in which the channel carriers decrease (depletion); and "forward" refers to the direction in which the channel carriers increase (enhancement). 3.2 (Enhancement-type field-effect transistor) threshold voltage (Vcaxro) threshold valtage The gate-source voltage when the drain current reaches a specified low value. 3.3 (Depletion-type field-effect transistor) cut-off voltage (Vcso) cut-off voltagc The gate-source voltage when the drain current reaches a specified low value. 3.4 (Junction-gate field-effect transistor) gate cut-off current The current flowing through the gate of a junction field-effect transistor when the gate junction is in reverse bias. 3.5 (Insulated-gate field-effect transistor) gate leakage current The leakage current flowing through the gate of an insulated-gate field-effect transistor. 3.6 Input capacitance Input capacitance The capacitance between the gate and the source when the drain and source are short-circuited under specified bias and frequency conditions. 3.7 Gate-source resistance (r) The DC resistance between the gate and the source under specified gate-source and drain-source voltages. 4 Symbols
4.1 General
Chapter V, 2, 3 and 4 apply here. IEC747-1
4.2 Supplementary general subscripts
In addition to the recommended general subscripts listed in 2.2.1 of Chapter V of IEC747-1, the following special subscripts are recommended for the field of field effect transistors:
B, b, U, u
Drain
Gate
Source
Substrate
Trth, (TO)
Reference value
4.3 List of text symbols
Names and nomenclature
4-3.1 Voltage
Drain-source (DC voltage)
Gate-source (DC) voltage
(junction field effect transistor and depletion-type insulated gate field effect transistor) (Gate-source cutoff voltage of transistor)
(Gate-source instantaneous voltage of enhanced insulated field effect transistor)
VestoFeVesorr
Symbol
Vest+Ves(b+VestTu)
Name and naming
Forward gate-source (DC) voltage
Reverse gate-source (DC) voltage
Gate-drain (DC) voltage
Source-drain (DC) voltage
Drain-drain (DC) voltage
Gate-drain (DC) voltage
Gate-gate voltage (for multi-gate devices)
Gate-source breakdown voltage when drain-source short circuit
4.3.2 Current
Drain (DC) current
Full gate current at specified gate-source conditions
Drain current at specified (external) gate-source resistanceDrain current at gate-source short circuit (Vc5\0)Source (DC) current
Source current at specified gate-drain conditions
Source current at gate-drain short circuit (Vin=0)Gate (Drain) current
Forward gate current
GB/T4586—94
Text symbols
VeiVsu
Vin;Vo
VeniVeu
VeE RiGS
Gate cut-off current (of a junction field effect transistor) when the source is open
Gate cut-off current (of a junction field effect transistor) when the drain is open
Gate cut-off current (of a junction field effect transistor) when the source is short-circuited
Gate leakage current (of an insulated gate field effect transistor) when the source is short-circuited
Gate cut-off current (of a junction field effect transistor) when the drain-source circuit conditions are met
Bottom current
4.3.3 Power dissipation
Drain-source (DC) power dissipationwww.bzxz.net
4.3.4 Resistance (or conductance) and capacitance
Drain-source Resistance
Gate-source resistance
Gate-drain resistance
Name and naming
Gate resistance (when Vs—0 or Va=0)
Drain-source on-state resistance
Drain-source off-state resistance
Sub-gate-source capacitance (drain-source and gate-AC open circuit) Open-circuit gate-drain capacitance (drain-source and gate-source AC open circuit) Open-circuit drain-source capacitance (gate-drain and gate-source AC circuit) Common source short-circuit input conductance: gate-source capacitance (drain-source AC short circuit)
Common source short-circuit output conductance: drain-source capacitance (gate-source AC short circuit)
Common source short-circuit input conductance
Common Source short-circuit output conductance
Common source feedback capacitance when AC short circuit is applied Its drain short-circuit output conductance is narrow (gate-to-source AC short circuit) 4.3.5 Common source small signal parameters and element type equivalent circuit parameters (see Figure 1, Figure 2 and Figure 3)
Short-circuit input admittance
Short-circuit reverse transfer admittance
Short-circuit forward transfer admittance
Modulus of short-circuit reverse transfer admittance
Phase of short-circuit reverse transfer admittance
Modulus of short-circuit forward transfer admittance
Phase of short-circuit stop transfer admittance
Gate-source conductance (in element type equivalent circuit) GB/T 4586-94
Text symbols
Tiss++x*
Frm(nv) Irn)
Ts(OPrr)
Ciont C'ji
Cru+Cta
Cal+Caa
iRe(ya)-juc.
3:-Re(yu)+jot
J'm-R et y..I+jaC.
Ji=Re(y1)+juC1a
Vh=Rety.)+ilm(y:)
yau.=Re(ye.)-jim(vau)
Ja=Re(ya)+jaCm
y,=Re(y2)+ja.2e
Iyve,lt lyia!
1 9. 5 9912
Iynltisztul
Names and nomenclature
Gate-drain conductance (in the equivalent circuit of the element type)
Explosion-source conductance (in the equivalent circuit of the element type)
Forward transconductance (in the equivalent circuit of the element type)
Transmission-source capacitance (in the equivalent circuit of the element type)
Gate-full capacitance (in the equivalent circuit of the element type)
Transmission-source capacitance (in the equivalent circuit of the element type)
4.3.6 Other parameters||t t||Power gain
Cut-off frequency (common source)
Noise voltage
Noise factor
Temperature coefficient of drain current
Temperature coefficient of drain-source resistance
Turn-on delay time
Turn-off delay time
Rise time
Fall time
Turn-on time
Turn-off time
GB/T4586-94
Text symbol
gna tgm
td(on)
tyo+yn
Switching time (see Figure 4)
fo =t(on) +t,
tar ra+
4.3.7 Paired field effect transistor
GB/T 4586—94
Common source small signal parameters and equivalent circuit parameters Input pulse
Output pulse
tdeatf
Figure 4 Switching time
Name and nomenclature
Gate leakage current difference (for insulated gate field effect transistor) and gate cut-off current difference (for junction field effect transistor) Gate-source voltage is quarter-point sliding current ratio
Small signal common source output conductance difference
Small signal common source forward transfer conductance ratio
Gate-source voltage difference
Change of gate-source voltage difference between two temperatures GB/T 4586—94
Text symbol
In51/10692
gm/gto2
Vesl —Vas2
[A(Vs1 -- VGse) /aT
Chapter I Basic Ratings and Characteristics
1 Overview
1.1 Device Types
Field effect transistors are divided into three categories:
A-type junction gate type;
B-type insulated gate depletion type;
C-type insulated enhancement type.
1.2 Multi-gate Devices
Subtract the smaller value from the larger value
Take the smaller of the two values
as the numerator
Subtract the smaller value from the larger value
Take the smaller of the two values
as the numerator
Subtract the smaller value from the larger value
For multi-gate devices, unless otherwise specified, the required electrode ratings and characteristics of each gate should be given separately. 1.3 Precautions for use
Since field effect transistors have a high input resistance, damage to the shed insulation layer (for insulated gate type) or the gate junction (for junction gate type) may be inevitable if excessive voltage is allowed to appear, for example due to contact with electrostatically charged personnel, leakage current from iron, etc. When using these devices, the precautions given in Chapter X, Clause 1 of EC747-1 should be observed. 2 Rated values ​​(limiting values)
2.1 Temperature
2.1.1 Minimum and maximum storage temperature (Tg) 2.1.2 Minimum and maximum operating temperature (ambient or case) (Tmb or Tcm) 2.2 Power dissipation (Ptot)
2.2.1 Maximum total power dissipation within the specified operating temperature range. Any special requirements for ventilation and/or installation should be specified.
2.2.1.1 Give the Piotm curve as a function of the operating temperature (Tamb or T), or (for power metal oxide semiconductor field effect transistors "MOSFETs" only) 2.2.1.2 a) the maximum effective channel temperature (T), and 2.2.1.2 b) the absolute limits of the total power dissipation (Ptoaba) NOTE: When Tu and Pt are specified, Ran and, where applicable, Zu shall also be specified (see the relevant subclauses in clause 3). 2.2.2 For power MOSFETs only:
Maximum peak total power dissipation (PtetMm). A
Give the curve for PtotMm (where applicable).
2-2.3 For power MOSFETs only
GB/T 4586-94
Where applicable, give the safe operating area (SOAR) for the specified operating temperature range under specified pulse conditions. 2.3 Voltage and current
Rated values ​​are preferably given by curves within the operating temperature range, or given at 25°C and at another higher operating temperature selected from the values ​​listed in Chapter 5 of IEC747-1. 2.3.1 Maximum drain-source voltage under specified conditions 2.3.2 Maximum reverse gate-source voltage and, where applicable, maximum forward gate-source voltage under specified conditions 2.3.3 Maximum gate-drain voltage under specified conditions 2.3.4 Maximum gate-gate voltage under specified conditions (for multi-gate devices) 2.3.5 For insulated gate field effect transistors with separate source and substrate terminals (chopper or analog switch type): - Maximum gate-substrate voltage under specified conditions: - Maximum drain-substrate voltage under specified conditions: - Maximum source-substrate voltage under specified conditions. 2.3.6 Drain current
2.3.6.1 Maximum drain current (1n)
2.3.6.2 For power MOSFETs only:
Maximum peak drain current (IDM) under specified pulse conditions. 2.3.7 Maximum forward gate current
2.3.8 Forward current of the reverse diode in the following applications (for power MOSFETs only): Low frequency discharge
Switching transistors:
Chopping,
Low level DC amplification.
2.3.8.1 Maximum continuous (DC) source current (Ts) 2.3.8.2 Maximum peak source current under specified pulse conditions (IsM(m)) 2.4 Mechanical data
The mechanical data requirements valid for other semiconductor devices also apply to these devices. 3 Characteristics
Unless otherwise specified, the characteristics are given at 25°C: other temperatures should be selected from the tables listed in 747-1, Chapter 5.
3.1 Low frequency amplifier application characteristics
3.1.1 Gate cut-off current
Gate leakage current
The maximum value at an operating temperature of 25°C and a specified higher operating temperature when the other terminals are connected as specified at a specified gate-source or drain-gate voltage. And:
The maximum current when all gates are connected together at a specified gate-source or drain-gate voltage, at an operating temperature of 25°C and a specified higher operating temperature. 3.1.2 Drain cutoff current
The maximum value at an operating temperature of 25°C and a specified higher operating temperature when the other terminals are connected as specified at the specified drain-source and gate-source voltages. +
GB/T4586-94
3.1.3 Drain current when gate-source voltage is zero (Inss) The minimum and maximum values ​​at an operating temperature of 25°C and (where applicable) a specified higher operating temperature when the gate-source voltage is zero, at the specified drain-source voltage, and the other terminals are connected as specified. 3.1.4 Gate current at specified gate-source voltage (1n) The minimum and maximum values ​​at specified gate-source and drain-source voltages, at an operating temperature of 25°C and (where applicable) a specified higher operating temperature, when the other terminals are connected as specified. 3.1.5 Gate-source cutoff voltage (V%a)
The minimum and maximum values ​​of the gate-source voltage within the operating temperature range when the gate current has been reduced to a specified low value and the other terminals are connected as specified.
3.1.6 Gate-source threshold voltage (VcsTo)
The minimum and maximum values ​​at a specified high value of drain-source voltage and a gate current value equal to or greater than 10 times the maximum value of the drain current when the gate voltage is zero, when the other terminals are connected as specified, at an operating temperature of 25°C and (where applicable) a specified higher operating temperature. 3.1.7 Short-circuit input capacitance (Cm)
Maximum small signal value of the common source when the output AC is short-circuited under specified bias conditions and specified low frequency. 3.1.8 Short-circuit output conductance and capacitance (gm, C) when applicable, the maximum small signal value of the common source when the input AC is short-circuited under specified bias conditions and specified low frequency. 3.1.9 Short-circuit feedback conductance (Cm) when applicable, the maximum small signal value of the common source when the input AC is short-circuited under specified bias conditions and specified low frequency. 3.1.10 Transconductance (g)
3.1.10.1 (not applicable to power MOSFET) Minimum and maximum values ​​under specified bias conditions and specified low frequency. 3.1.10.2 For power MOSFET
Minimum value at specified drain-source voltage and drain current, at 25°C operating temperature and (when applicable) specified elevated temperature.
3.1.11 Noise voltage and, where applicable, noise figure for low noise applications (V., F) Maximum values ​​for common source under specified conditions of bias, source resistance, center frequency and power bandwidth. 3.1.12 Reverse diode characteristics (for power MOSFETs only). 3.1.12.1 Forward voltage (V)
Maximum value at specified source current (Is)) and Vcs = 0. 3.1.12.2 Reverse recovery time (tr(B,) Maximum value under specified conditions
3.1.13 For power MOSFETs only and when the effective channel temperature is quoted as a rated value: Maximum value of channel-to-ambient thermal resistance (Rn(j-amb) or channel-to-case thermal resistance (Rihti-ux)). 3.1.14: For power MOSFETs only and when the effective channel temperature is quoted as a rated value: Channel-to-ambient transient thermal impedance (Z> maximum value. 3.2 Characteristics for high frequency amplifier applications
3.2.1 Gate cut-off current
Gate drain current
The maximum value at an operating temperature of 25°C and a specified higher operating temperature when the other terminals are connected as specified under the specified gate-source or gate-drain voltage. And:
The maximum value of the current when all gates are connected together at an operating temperature of 2 and a specified higher operating temperature +
, 3.2.2 Drain cut-off current
GB/T 458694
The maximum value at an operating temperature of 25°C and a specified higher operating temperature when the other terminals are connected as specified under the specified drain-source and gate-source voltages. 3.2.3 Drain current with zero gate-source voltage (11ss) The minimum and maximum values ​​when the gate-source voltage is zero, at a specified drain-source voltage, with the other terminals connected as specified, at an operating temperature of 25°C and (where applicable) at a specified higher operating temperature. 3.2.4 Drain current at a specified gate-source voltage (Icgx) The minimum and maximum values ​​when the other terminals are connected as specified, at a specified drain-source voltage, with the other terminals connected as specified, at a T excitation of 25°C and (where applicable) at a specified higher operating temperature. 3-2.5 Gate-source cut-off voltage (VGsE)
The minimum and maximum values ​​of the gate-source voltage within the operating temperature range when the drain current has been reduced to a specified low value and the other terminals are connected as specified.
3-2.6 The minimum and maximum values ​​of the gate-source threshold voltage (VGs(Tu)) at a specified high gate-source voltage, drain current equal to or greater than 10 times the maximum drain current with zero gate voltage, and other connections as specified, at an operating temperature of 25°C and (where applicable) at a specified higher operating temperature: 3.2.7 Y parameter
3.2.7.1 For all field effect transistors (FETs), at the specified bias and frequency values. yi
Maximum value of the real and imaginary parts;
%—Maximum value of the real and imaginary parts;
31.—Maximum and minimum value of the real and imaginary parts (see 3.2.7.2); 3—Maximum value of the real and imaginary parts.
3.2.7.2 For power MSFETs, use the positive transconductance (gm) as a substitute for %. Minimum values ​​at specified drain-source voltage and full load current, at 25°C operating temperature and (where applicable) at specified elevated temperatures.
3.2.8 Noise Figure (F)
Maximum values ​​at specified conditions of bias, source impedance, center frequency, and power bandwidth. These conditions must be those that provide the lowest noise figure value. 3.2.9 For power MOSFETs only and when effective channel filtering is quoted as a rated value: Maximum value of channel-to-ambient thermal resistance (Rh(mib)) or channel-to-case thermal resistance (Rhita). 3.2.10 For power MOSFETs only and when effective channel temperature is quoted as a rated value: Maximum value of channel-to-ambient transient thermal impedance (Zthjaab) or channel-to-case transient thermal impedance (Zthtic). 3.3 Characteristics for switch applications
3.3.1 Gate cut-off current
Gate leakage current
The maximum value at 25°C operating temperature and a specified higher operating temperature when the other terminals are connected as specified at the specified gate-source or drain-gate voltage. And:
The maximum value of the current when all gates are connected together at the specified gate-source or hysteresis-gate voltage, at 25°C operating temperature and a specified higher operating temperature. 3. 3.2 Drain cut-off current
The maximum value at 25°C operating temperature and a specified higher operating temperature when the other terminals are connected as specified at the specified drain-source and gate-source voltages. 3.3.3 Drain-source cut-off voltage (Vugant) GB/T 45B6-94
The minimum and maximum values ​​of the gate-source voltage within the operating temperature range when the drain current has been reduced to the specified low value and the other terminals are connected as specified.
3.3.4 Drain-source on-state voltage (VGs(ru)) The minimum and maximum values ​​at 25°C operating temperature and (where applicable) a specified higher operating temperature when the drain-source voltage is a specified higher value and the drain current is equal to or greater than 10 times the maximum value of the drain current when the gate voltage is zero, and the other terminals are connected as specified. 3.3.5 On-state characteristics
3.3.5.1 Drain-source on-state voltage
Drain-source saturation voltage (Vsn)
The maximum value when the drain current and gate-source voltage are the specified quotient value (at 25°C operating temperature and, where applicable, at a specified higher temperature) or (for power MOSFETs only) 3.3.5.2 Drain-source on-state resistance (rms(on)) The maximum value when the drain current and gate-source voltage are the specified higher value (at 25°C operating temperature and, where applicable, at a specified higher temperature).
3.3.6 Small signal gate-source capacitance at specified frequency a) Maximum value under the electrical conditions specified in 3.3.1. b) When applicable, the maximum value under the electrical conditions specified in 3.3.5 and when the drain-source voltage is equal to the drain-source saturation voltage.
3-3.7 Small signal drain-source capacitance at specified frequency a) Maximum value under the electrical conditions specified in 3.3.1. b) When applicable, the maximum value under the electrical conditions specified in 3.3.5 and when the drain-source voltage is equal to the drain-source saturation voltage.
3.3.8 Small signal gate-drain capacitance at specified frequency a) Maximum value under the electrical conditions specified in 3.3.1. b) When applicable, the maximum value under the electrical conditions specified in 3.3.5 and when the drain-source voltage is equal to the drain-source saturation voltage.
3.3. 9 Switching time (see Figure 5)
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