This specification specifies the detailed requirements for 3DG130 NPN silicon high frequency low power transistors (hereinafter referred to as devices). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices". SJ 20016-1992 Semiconductor Discrete Devices GP, GT and GCT Level 3DG182 NPN Silicon Low Power High Reverse Voltage Transistor Detailed Specification SJ20016-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3DG130 NPN silicon high frequency low power transistors (hereinafter referred to as devices). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices".

GB 4587-1984 Test methods for bipolar transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices

1 Scope
People's Republic of China Electronic Industry Military Standard Semiconductor Discrete Devices
GP, GT and GCT Grades
3DG182 Type NPN Silicon Low-Power High-Reverse-Voltage Transistor Detail Specification
Semiconductor discrete deviceDetailspecificationforNPNsiliconlow-powerhiht-reverse-vollagetransistorfortype3DG182GP,GTandGCTelasses
1.1 Subject Content
SJ20016--92
This specification specifies the detailed requirements for 3DG182 type NPN silicon low-power high-reverse-vollage transistors (hereinafter referred to as devices). This type of device is in accordance with the provisions of GJB33-85 Semiconductor Discrete Device General Specifications, providing three levels of product assurance (GP, GT and GCT grades).
China Electronics Industry Corporation Issued on February 1, 1992 Implementation on May 1, 1992
1.2 Dimensions
SJ20016-92
The dimensions shall conform to A3-02B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1:
0.35(M) M
Figure 1 Dimensions
1.3 Maximum Ratings
3DG182A
3DG182B
3DG182C
3DG182D
3DG182E
TA-25℃www.bzxz.net
Note: 1) When Ta>25℃, derate linearly by 4.0nW/C. 2
Terminal polarity:
1.Emitter
3.Collector
Unit: mm
A3-02B
1.4Main electrical characteristics (T^=25℃)
Symbol (unit)
VcE(sa))
VE(sat))
Test conditions
Vee=10V
VcE=2V
Ic-50m A
VcE=2V
I-100mA
Vce=2V
Ic-200mA
Vce-10V
Ic=20mA
f=30MHz
Ic-200mA
Ig=20mA
Ic=200mA
Ig=20mA
Note: 1) Pulse method (see 4.5.1).
2 Reference documents
SJ20016—92
3DG182
3DG182
3DG182
3DG182
3DG182
3DG182
3DG182
GB4587--84
Test method for bipolar transistors
GB7581---87
GJB33--85
GJB128-86
3 Requirements
3.1 Detailed requirements
Dimensions of discrete semiconductor devices
General specification for discrete semiconductor devices
Test methods for discrete semiconductor devices
All requirements shall comply with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions
Minimum value
The design, structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating
Maximum value
The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or tin-free. When the terminal material and coating are required to be selected or otherwise required, they shall be clearly specified in the contract or order (see 6). 3.3 Marking
The marking of the device shall be in accordance with the provisions of GJB33.
4 Quality Assurance Provisions
4.1 Sampling and Inspection
SJ20016-92
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification Inspection
Qualification Inspection shall be in accordance with the provisions of GJB33.
4.3 Screening (GT and GCT grades only)
Screening shall be in accordance with Table 2 of GJB33 and this specification. The following tests shall be carried out in accordance with Table 1 of this specification. Devices exceeding the specified limit values ​​shall not be accepted.
(See GJB33 Table 2)
7. Intermediate parameter test
8. Power aging
9. Final test
4.3.1 Power aging conditions
The power aging conditions are as follows;
T-25±3℃
VcB=40V(3DG182A)
VcB=70V(3DG182B, C)||t t||VcB=-125V(3DG182D, E)
P=700mW
Icnoi and hrEa
GT and GCT grades
According to Group A2 in Table 1 of this specification;
AIcnor=100% of the initial value or 0.1μA, whichever is greater;AhE=±20%
Note, heat sink or forced air cooling is not allowed on the device. 4.4 Quality consistency inspection
Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A inspection
Group A inspection shall be carried out in accordance with the provisions of G.IB33 and Table 1 of this specification. 4.4.2 Group B inspection
Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and variation (A) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.4.3 Group C inspection
Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and change (△) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions. 4.5.1 Pulse test
SJ20016--92
Pulse test shall be carried out in accordance with 3.3.2 of GJB128.1. Table 1 Inspection of Group A
Inspection or test
Group A7
Appearance and mechanical inspection
Group A2
Collector-base breakdown
3DG182A
3DG182B
3DG182C
3LG182D
3DG182E
Collector-emitter breakdown
3DG182 A
3DG182B
3DG182C
3DG182D
3DG182E
Emitter-base breakdown voltage
Collector-base cutoff current
3DG182A
3DG182B
3DG182C
3DG182D
3DG182E
Collector Emitter-base cutoff
3DG182A
3DG182B
3DG182C
3DG182D
3DG182E
GJB128
GB4587
Emitter-base open
le=100μA
This specification
Appendix A
Emitter-base open|| tt||Ic=lmA
Collector-base open
Ig-100μA
Emitter-base open
VcB-60V
Ven=-100V
Vcn-140V
Vcn-180V
Vcn220V
Emitter-base open
VcE=100V
Vce =-140V
VeF=180V
VcE220V
LTPD symbol
V(BR)CBO
VRRCEO
VaROERO
Limit value
Minimum value Maximum value
Inspection or test
Emitter-base load current
Forward current transfer ratio
Forward current transfer ratio
Forward current Current transfer ratio
Forward current transfer ratio
Collector-emitter
Saturation voltage drop
Base-emitter saturation
A3 group
High temperature operation:
Collector-base cut-off current
3DG182A
3DG182B
3DG182C
3DG182D
3DG182E
Low temperature operation ：
Forward current transfer ratio
SJ20016--92
Continued table 1A group test
GB4587
Collector-base open circuit
Vea=5V
Vce-10V
Ic=lmA
VcE-2V
Ic-50mA
VcE—2V
Ic=100mA
Vc E=2V
Ic-200mA
Pulse method (see 4.5.1)
Ic=200mA
In=20mA
Pulse method (see 4.5.1)
Ic-200mA
g=20mA
Pulse method (see 4.5.1)
TA=+150℃
Emitter-base open
Vcnm40V||tt ||Vcn65V
Ven=90V
Vcn-120V
VcB=150V
TA--55℃
Vcn2V,Ic200mA
Pulse method (see 4.5.1)
VcE(set)
VBE(t)
Minimum value
Maximum value
Inspection or test
A4 group||t t||Open circuit output capacitance
Characteristic frequency
Groups A5, A6 and A7
Not applicable
Inspection or test
Group B1
Solderability
Durability of marking
Group B2
Thermal shock (temperature cycle)
Sealing:
a. Fine leak check
b. Coarse leak check
Final test:
Group B3||t t||Steady-state working life
3DG182A
3DG182B.C
3DG182D.E
Final test:
R4 grouping
Open cap internal visual inspection
(Design verification)
Bond strength
SJ20016-92
Continued Table 1A group inspection
GB4587
Vce-10V,Ic-0
f=1MHz
VcE=10V,Ic-20mA
f-30MHz
Table 2 Group B Test
GJB128
See Table 4, Steps 1, 3 and 4
Po700mW, T25C±3℃
Vcu=40V
Vcn70V
Vca125V
It is not allowed to add heat sink or strong air cooling to the device. See Table 4, Steps 2 and 5.
Visual inspection standard is based on the design during identification
Minimum and maximum values
One device per batch, 0 failure
20(C=0)
Inspection or test
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test:
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
Sealing:
a. Detailed leak inspection| |tt||b. Rough leak detection
Comprehensive temperature/humidity
Cyclic test
Appearance and mechanical inspection
Final test:
Group C3
Variable frequency vibration
Constant acceleration
Final test:
Group C4
Salt gas (when applicable)
Group C5
Not applicable
SJ20016-92
Continued Table 2 Group B inspection
GJB128
T-200℃
See Table 4, steps 2 and 5
Table 3 Group C Inspection
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4, steps 1, 3 and 4
See Table 4, steps 1, 3 and 4
Inspection or test
C6 group
Steady-state working life
3DG182A
3DG182B.C
3DG182D, E
Final test:
Inspection or test
Collector-base cut-off current
3DG182A
3DG182 B
3DG182C
3DG182D
3DG182E
Collector-base cutoff current
3DG182A
3DG182B
3DG182C
3DG182D
3DG182E
Collector-emitter saturation voltage
Forward current transfer ratio
Forward current transfer ratio
SJ20016—92
Continued Table 3C Group Test
GJB128
Ta=25±3℃.Ptot=700mW
Vca=40V
VcB=70V
VcB125V
Device with heat sink or forced air cooling is not allowed
See Table 4, steps 2 and 5
Final test of Group B and Group C in Table 4
GB4587
Emitter-base open circuit
Vce-60V
Vce=100V
VcE—-140V
VcE-180V
VcE=220V
Emitter-base open
VcE=60V
Vc=100V
Vce=-140V
VcE=180V
Vcg220V
Vc=200mA
Ig-20mA
Vce =2V
Ic-200mA
Pulse method (see 4.5.1)
Vce=2V
Ic=200mA
Pulse method (see 4.5.1)
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. Compliant
IcEont)
Minimum value
Input=10
Maximum value
Initial value
Delivery preparation
Packing requirements shall be in accordance with GJB33.
Notes
SJ20016—92
The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). — 10
SJ20016--92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit value under specified conditions.
A2 Test circuit
Test circuit see Figure A1
Voltage source
Collector-emitter breakdown voltage test circuit Figure A1
A3 Steps
Resistor R is a current limiting resistor and should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BR>CEo, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of the China Electronics Technology Standardization Institute. This specification was jointly drafted by the China Electronics Technology Standardization Institute and the State-owned 8231 Factory. The main drafters of this specification are Wang Changfu, Gong Yun, and Ge Yini. Planned project: B91022.
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