title>Semiconductor discrete device-Detail specification for NPN silicon low-power high-reverse-voltage transistor for type 3DG182 GP,GT and GCT classes - SJ 20016-1992 - Chinese standardNet - bzxz.net
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Semiconductor discrete device-Detail specification for NPN silicon low-power high-reverse-voltage transistor for type 3DG182 GP,GT and GCT classes
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Standard ID:
SJ 20016-1992
Standard Name:Semiconductor discrete device-Detail specification for NPN silicon low-power high-reverse-voltage transistor for type 3DG182 GP,GT and GCT classes
This specification specifies the detailed requirements for 3DG130 NPN silicon high frequency low power transistors (hereinafter referred to as devices). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices". SJ 20016-1992 Semiconductor Discrete Devices GP, GT and GCT Level 3DG182 NPN Silicon Low Power High Reverse Voltage Transistor Detailed Specification SJ20016-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3DG130 NPN silicon high frequency low power transistors (hereinafter referred to as devices). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices".
GB 4587-1984 Test methods for bipolar transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices
Some standard content:
1 Scope People's Republic of China Electronic Industry Military Standard Semiconductor Discrete Devices GP, GT and GCT Grades 3DG182 Type NPN Silicon Low-Power High-Reverse-Voltage Transistor Detail Specification Semiconductor discrete deviceDetailspecificationforNPNsiliconlow-powerhiht-reverse-vollagetransistorfortype3DG182GP,GTandGCTelasses 1.1 Subject Content SJ20016--92 This specification specifies the detailed requirements for 3DG182 type NPN silicon low-power high-reverse-vollage transistors (hereinafter referred to as devices). This type of device is in accordance with the provisions of GJB33-85 Semiconductor Discrete Device General Specifications, providing three levels of product assurance (GP, GT and GCT grades). China Electronics Industry Corporation Issued on February 1, 1992 Implementation on May 1, 1992 1.2 Dimensions SJ20016-92 The dimensions shall conform to A3-02B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1: 0.35(M) M Figure 1 Dimensions 1.3 Maximum Ratings 3DG182A 3DG182B 3DG182C 3DG182D 3DG182E TA-25℃www.bzxz.net Note: 1) When Ta>25℃, derate linearly by 4.0nW/C. 2 Terminal polarity: 1.Emitter 3.Collector Unit: mm A3-02B 1.4Main electrical characteristics (T^=25℃) Symbol (unit) VcE(sa)) VE(sat)) Test conditions Vee=10V VcE=2V Ic-50m A VcE=2V I-100mA Vce=2V Ic-200mA Vce-10V Ic=20mA f=30MHz Ic-200mA Ig=20mA Ic=200mA Ig=20mA Note: 1) Pulse method (see 4.5.1). 2 Reference documents SJ20016—92 3DG182 3DG182 3DG182 3DG182 3DG182 3DG182 3DG182 GB4587--84 Test method for bipolar transistors GB7581---87 GJB33--85 GJB128-86 3 Requirements 3.1 Detailed requirements Dimensions of discrete semiconductor devices General specification for discrete semiconductor devices Test methods for discrete semiconductor devices All requirements shall comply with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions Minimum value The design, structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating Maximum value The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or tin-free. When the terminal material and coating are required to be selected or otherwise required, they shall be clearly specified in the contract or order (see 6). 3.3 Marking The marking of the device shall be in accordance with the provisions of GJB33. 4 Quality Assurance Provisions 4.1 Sampling and Inspection SJ20016-92 Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification Inspection Qualification Inspection shall be in accordance with the provisions of GJB33. 4.3 Screening (GT and GCT grades only) Screening shall be in accordance with Table 2 of GJB33 and this specification. The following tests shall be carried out in accordance with Table 1 of this specification. Devices exceeding the specified limit values shall not be accepted. (See GJB33 Table 2) 7. Intermediate parameter test 8. Power aging 9. Final test 4.3.1 Power aging conditions The power aging conditions are as follows; T-25±3℃ VcB=40V(3DG182A) VcB=70V(3DG182B, C)||t t||VcB=-125V(3DG182D, E) P=700mW Icnoi and hrEa GT and GCT grades According to Group A2 in Table 1 of this specification; AIcnor=100% of the initial value or 0.1μA, whichever is greater;AhE=±20% Note, heat sink or forced air cooling is not allowed on the device. 4.4 Quality consistency inspection Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A inspection Group A inspection shall be carried out in accordance with the provisions of G.IB33 and Table 1 of this specification. 4.4.2 Group B inspection Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and variation (A) requirements shall be carried out in accordance with the steps in Table 4 of this specification. 4.4.3 Group C inspection Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and change (△) requirements shall be carried out in accordance with the steps in Table 4 of this specification. 4.5 Inspection and test methods Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions. 4.5.1 Pulse test SJ20016--92 Pulse test shall be carried out in accordance with 3.3.2 of GJB128.1. Table 1 Inspection of Group A Inspection or test Group A7 Appearance and mechanical inspection Group A2 Collector-base breakdown 3DG182A 3DG182B 3DG182C 3LG182D 3DG182E Collector-emitter breakdown 3DG182 A 3DG182B 3DG182C 3DG182D 3DG182E Emitter-base breakdown voltage Collector-base cutoff current 3DG182A 3DG182B 3DG182C 3DG182D 3DG182E Collector Emitter-base cutoff 3DG182A 3DG182B 3DG182C 3DG182D 3DG182E GJB128 GB4587 Emitter-base open le=100μA This specification Appendix A Emitter-base open|| tt||Ic=lmA Collector-base open Ig-100μA Emitter-base open VcB-60V Ven=-100V Vcn-140V Vcn-180V Vcn220V Emitter-base open VcE=100V Vce =-140V VeF=180V VcE220V LTPD symbol V(BR)CBO VRRCEO VaROERO Limit value Minimum value Maximum value Inspection or test Emitter-base load current Forward current transfer ratio Forward current transfer ratio Forward current Current transfer ratio Forward current transfer ratio Collector-emitter Saturation voltage drop Base-emitter saturation A3 group High temperature operation: Collector-base cut-off current 3DG182A 3DG182B 3DG182C 3DG182D 3DG182E Low temperature operation : Forward current transfer ratio SJ20016--92 Continued table 1A group test GB4587 Collector-base open circuit Vea=5V Vce-10V Ic=lmA VcE-2V Ic-50mA VcE—2V Ic=100mA Vc E=2V Ic-200mA Pulse method (see 4.5.1) Ic=200mA In=20mA Pulse method (see 4.5.1) Ic-200mA g=20mA Pulse method (see 4.5.1) TA=+150℃ Emitter-base open Vcnm40V||tt ||Vcn65V Ven=90V Vcn-120V VcB=150V TA--55℃ Vcn2V,Ic200mA Pulse method (see 4.5.1) VcE(set) VBE(t) Minimum value Maximum value Inspection or test A4 group||t t||Open circuit output capacitance Characteristic frequency Groups A5, A6 and A7 Not applicable Inspection or test Group B1 Solderability Durability of marking Group B2 Thermal shock (temperature cycle) Sealing: a. Fine leak check b. Coarse leak check Final test: Group B3||t t||Steady-state working life 3DG182A 3DG182B.C 3DG182D.E Final test: R4 grouping Open cap internal visual inspection (Design verification) Bond strength SJ20016-92 Continued Table 1A group inspection GB4587 Vce-10V,Ic-0 f=1MHz VcE=10V,Ic-20mA f-30MHz Table 2 Group B Test GJB128 See Table 4, Steps 1, 3 and 4 Po700mW, T25C±3℃ Vcu=40V Vcn70V Vca125V It is not allowed to add heat sink or strong air cooling to the device. See Table 4, Steps 2 and 5. Visual inspection standard is based on the design during identification Minimum and maximum values One device per batch, 0 failure 20(C=0) Inspection or test B5 group Not applicable B6 group High temperature life (Not working) Final test: Inspection or test C1 group Dimensions C2 group Thermal shock (glass stress) Terminal strength Sealing: a. Detailed leak inspection| |tt||b. Rough leak detection Comprehensive temperature/humidity Cyclic test Appearance and mechanical inspection Final test: Group C3 Variable frequency vibration Constant acceleration Final test: Group C4 Salt gas (when applicable) Group C5 Not applicable SJ20016-92 Continued Table 2 Group B inspection GJB128 T-200℃ See Table 4, steps 2 and 5 Table 3 Group C Inspection GJB128 See Figure 1 Test condition A Test condition E See Table 4, steps 1, 3 and 4 See Table 4, steps 1, 3 and 4 Inspection or test C6 group Steady-state working life 3DG182A 3DG182B.C 3DG182D, E Final test: Inspection or test Collector-base cut-off current 3DG182A 3DG182 B 3DG182C 3DG182D 3DG182E Collector-base cutoff current 3DG182A 3DG182B 3DG182C 3DG182D 3DG182E Collector-emitter saturation voltage Forward current transfer ratio Forward current transfer ratio SJ20016—92 Continued Table 3C Group Test GJB128 Ta=25±3℃.Ptot=700mW Vca=40V VcB=70V VcB125V Device with heat sink or forced air cooling is not allowed See Table 4, steps 2 and 5 Final test of Group B and Group C in Table 4 GB4587 Emitter-base open circuit Vce-60V Vce=100V VcE—-140V VcE-180V VcE=220V Emitter-base open VcE=60V Vc=100V Vce=-140V VcE=180V Vcg220V Vc=200mA Ig-20mA Vce =2V Ic-200mA Pulse method (see 4.5.1) Vce=2V Ic=200mA Pulse method (see 4.5.1) Note: 1) For this test, devices exceeding the limit values of Group A shall not be accepted. Compliant IcEont) Minimum value Input=10 Maximum value Initial value Delivery preparation Packing requirements shall be in accordance with GJB33. Notes SJ20016—92 The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). — 10 SJ20016--92 Appendix A Collector-emitter breakdown voltage test method (supplement) The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit value under specified conditions. A2 Test circuit Test circuit see Figure A1 Voltage source Collector-emitter breakdown voltage test circuit Figure A1 A3 Steps Resistor R is a current limiting resistor and should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BR>CEo, the transistor is qualified. Additional notes: This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of the China Electronics Technology Standardization Institute. This specification was jointly drafted by the China Electronics Technology Standardization Institute and the State-owned 8231 Factory. The main drafters of this specification are Wang Changfu, Gong Yun, and Ge Yini. Planned project: B91022. Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.