This standard specifies the product classification, technical requirements, test methods, inspection rules and marking, packaging, transportation and storage of silicon single crystal cutting and grinding wafers (referred to as silicon wafers) for power semiconductor devices. This standard is effective for round silicon wafers prepared by cutting and double-sided grinding of Czochralski single crystals, floating zone melting single crystals, and neutron transmutation mixed crystals. JB/T 7061-1993 Silicon wafers for power semiconductor devices JB/T7061-1993 standard download decompression password: www.bzxz.net

Mechanical Industry Standard of the People's Republic of China
JB/T 7061-1993
Silicon Wafers for Power Semiconductor Devices
Published on October 8, 1993
Ministry of Machinery Industry of the People's Republic of China
Implemented on January 1, 1994
Mechanical Industry Standard of the People's Republic of China
Silicon Wafers for Power Semiconductor Devices
1 Subject Content and Scope of Application
JB/T7061-1993
This standard specifies the product classification, technical requirements, test methods, inspection rules and marking, packaging, transportation and storage of silicon single crystal cutting and grinding wafers (referred to as silicon wafers) for power semiconductor devices. This standard applies to the square silicon wafers prepared by cutting and double-sided grinding of Czochralski single crystals, floating zone melting single crystals, and neutron-doped single crystals. 2 Reference standards
GB1550
GB1555www.bzxz.net
GB2828
GB6615
GB6618
GB6619
GB11073
GB12962
Silicon wafer classification
Measuring method of conductivity type of silicon single crystal
Measuring method of crystal orientation light pattern of silicon single crystal|| tt||Batch inspection counting sampling procedure and sampling tableIn-line four-probe test method for resistivity of silicon wafersTest method for thickness and total thickness change of silicon wafersContact test method for curvature of silicon wafers
Test method for radial resistivity change of silicon wafersSilicon single crystal
3.1 Conductivity type and silicon wafer category
Silicon wafers are divided into N-type and P-type according to conductivity type, and are divided into three types of silicon wafers: Czochralski, suspended zone melting and neutron doping according to silicon single crystal category. 3.2 Brand
The brands of silicon single crystal cutting wheel and grinding wheel are: -Msi
CS(LS)
-Resistivity range (n·cm)
Silicon wafer diameter (mm)
-CS represents cutting wheel
LS represents grinding wheel
-Silicon single crystal conductivity type
Silicon wafer category
In the silicon wafer category, CZ represents the Czochralski method, FZ represents the floating zone melting method, and NTD represents the neutron transmutation doping method. For example: FZ-MsiN-LS
51~60-60~80 means floating zone melting N-type silicon single crystal grinding wafer, with a diameter of 51~60mm and a resistivity of 60~80m.cm
4 Technical requirements
Approved by the Ministry of Machinery Industry on October 8, 1993
Implemented on January 1, 1994
JB/T7061-1993
The physical parameters of silicon wafers such as conductivity type, resistivity, minority carrier lifetime, dislocation, and crystal orientation deviation shall comply with the provisions of GB12962. The technical parameters of non-uniform diameter silicon wafers shall comply with the provisions of Table 1, and the thickness of silicon wafers shall be in accordance with user requirements.
Product Name
Cutting Wheel
Grinding Wheel
Technical Parameters
Thickness Deviation
Total Thickness Change
Bending
Thickness Deviation
Total Thickness Change
Bending
>40~50
Diameter Range
>50~60
The technical parameters of equal diameter silicon wafers shall comply with the provisions of Table 2, and the thickness of silicon wafers shall be based on user requirements.
Product Name
Technical Parameters
Diameter Deviation
Thickness Deviation
Cutting Disc
Grinding Disc
Total Thickness Change
Curvature
Diameter Deviation
Thickness Deviation
Total Thickness Change
Curvature
Uncut Angle
≤0. 005
>40~50. 8
0~-0.20mm.
Diameter Deviation of Sheet: (
Crystal Direction Deviation of Silicon Wafer; ≤3°.
Surface Quality
Diameter Range
>50.8~63.5
± 0. 020
≤0. 007
>63.5~76.2
>60~80
>80~100
>90~100
The radial extension of the chipping edge of the silicon wafer meets the requirements of Table 1 and Table 2, the perimeter length is not greater than 2mm, and the total number of edges of each silicon wafer does not exceed two. The chipping edge of the set wafer is only allowed to exist on one side, the depth does not exceed 0.5 times the thickness of the wafer, and the number shall not exceed three. The chipping edge of the set wafer extending along the radial direction The length shall not exceed 0.3mm. The length of the notch extending radially on non-uniform diameter silicon wafers shall not exceed 1mm, and each silicon wafer shall not have more than two notches. The cutting disc is allowed to have normal arc-shaped knife marks on its surface, and the depth of the knife marks shall not exceed 0.01mm. The grinding disc should not have visible scratches.
Silicon wafers are not allowed to have cracks.
The surface of the grinding disc should be free of stains and abnormal color spots. 2
Test method
JB/T 7061 -1993
The conductivity type of silicon wafers shall be measured in accordance with the provisions of GB1550, and the resistivity of silicon wafers shall be measured in accordance with the provisions of GB6615. The radial resistivity change of silicon wafers shall be measured in accordance with the provisions of GB11073, and the crystal orientation of silicon wafers shall be measured in accordance with the provisions of GB1555. The straightness of silicon wafers shall be measured with a vernier caliper with an accuracy of 0.02mm. The thickness and total thickness change of silicon wafers shall be measured in accordance with the provisions of CB6618. The curvature of silicon wafers shall be measured in accordance with the provisions of GB6619. Cracks: Visual inspection under 8W fluorescent light,
Visual inspection under 8W fluorescent light.
Notch:
Knife marks: Visual inspection under 8W fluorescent light or measurement with a knife mark depth tester. Edge collapse: Visual inspection under 8W fluorescent light or measurement with a ruler. Scrubbing: Visual inspection under 8W fluorescent light.
When there is a dispute over the surface quality, use a 4-6x magnifying glass for visual inspection. Inspection rules
Each batch of silicon wafers shall be inspected according to Table 3.
Silicon wafers that fail the sampling inspection can be inspected according to the stricter method, but only once. Table
Inspection items
Resistivity range
Radial resistivity change
Crystal orientation deviation
Thickness deviation
Total thickness change
Bending
Diameter deviation
Reference standards
GB6615
GB1107 3
GB1555
GB6618
GB6618
GB6619
Marking, packaging, transportation and storage
Inspection method
In-line four-probe method
In-line four-probe method
Laser orientation instrument method
0.01mm micrometer
0.01mm micrometer
Three-spherical support curvature tester
0.02mm vernier caliper
Visual inspection under 8W fluorescent light
Visual inspection under 8W fluorescent light
Visual inspection under 8W fluorescent light
In 8W fluorescent light Visual inspection under fluorescent light
Visual inspection under 8W fluorescent lightDepth tester
Visual inspection under 8W fluorescent light
Inspection requirements
Qualification criteria
GB12962 Table 2, Table 3, Table 4
Table 1, Table 2
Table 1, Table 2
Table 2, 4.4
Sampling plan【
mm, piecesTable 1, Table 2, 4.6.1.4.6.2,4.6.3 pieces
The packaging box should be marked with "Handle with care" and "Anti-corrosion, moisture-proof" or marked and indicate: 1.0
Silicon wafer name;
Silicon wafer weight;
Supplier's name, address and zip code.
The packaging box should indicate:
supplier name;
silicon wafer name and brand;
silicon wafer quantity and weight;
packing date,
JB/T7061-1993
The packaging box should be accompanied by a silicon wafer certificate, which should indicate: supplier name;
silicon wafer name and brand;
doping element;
direction;
crystal number:
furnace number;
minority carrier lifetime;
dislocation:
thickness:
number of wafers or weight;
inspector and factory inspection department stamp;
this standard number;
inspection date.
The silicon wafers are first packed into clean plastic bags, then into boxes of corresponding specifications, and then the boxes are packed into packaging boxes. The packaging should have anti-shatter, anti-damage and anti-contamination measures. Special packaging requirements shall be agreed upon by the supply and demand parties. 7.3 Transportation
The silicon wafers should be loaded and unloaded gently during transportation, and it is strictly forbidden to throw them. Anti-vibration and moisture-proof measures should be taken. 7.4 Storage
The silicon wafers should be stored in a clean and dry environment. 4
Crystal direction: crystal crystallization direction.
JB/T7061-1993
(Supplement)
Crystal direction deviation: the angle between the normal line of the silicon wafer and the crystal crystallization direction. Silicon wafer thickness: the thickness value at the center of the silicon wafer.
Thickness deviation: the difference between the measured value and the nominal value of the thickness at the center of the silicon wafer, diameter deviation; the difference between the measured value and the nominal value of the diameter of the silicon wafer. Total thickness change: the difference between the maximum and minimum values ​​of the thickness of the five points of the silicon wafer (the center point and the four points 90° apart at 6mm from the edge). Curvature: the measure of the convex or concave deformation at the center point of the centerline of the silicon wafer. Notch:
The defect of the silicon wafer edge penetrating both sides.
Broken edge:7
The damage of the silicon wafer edge not penetrating both sides.
Crack: The damage on the surface of the silicon wafer or penetrating both sides. Knife mark: The mark caused by the friction between the advance and retreat of the silicon wafer and the blade during cutting. Scratches: The surface scratches caused by the grinding of the silicon wafer. The arc shape of the silicon wafer circumference after processing. Chamfer:
The silicon wafer with diameter deviation after rolling or circumferential processing, equal diameter silicon wafer:
Non-equal diameter silicon wafer: The silicon wafer without diameter rolling or circumferential processing. Batch range
91~150
151280
281~500
501~1200
1201~3200
3201~10000
Product quantity
JB/T7061-1993
Appendix B
AQL sampling table
(supplement)
Qualified judgment number, Re: 2
Ac in the table:
Unqualified judgment number.
Additional remarks:
This standard is proposed and managed by the Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery Industry. 3
This standard is drafted by Shanghai Rectifier General Factory of Shanghai Electric Company and Shanghai Electronic Equipment Factory. The main drafters of this standard are Sun Guofan, Wang Shoupu, Dong Jianhua and Shi Jianxin. 1. 5
People's Republic of China
Mechanical Industry Standard
Silicon Wafer for Power Semiconductor Devices
JB/T 7061 - 1993
Published and issued by the China Academy of Mechanical Science
Printed by the China Academy of Mechanical Science
(No. 2 Shouti South Road, Beijing
Format 880×1230
Edition X, XX, 19XX
Printing 1-XXX
Postal Code 100044)
Number of words XXX,XXX
Printing sheets X/X
Printing X, XX, 19XX
Price XXX.XX Yuan
XX-XXX
Mechanical Industry Standard Service Network: http://www.JB.ac.cn661190
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