SJ/T 10149-1991 Electronic Devices Graphic Library Semiconductor Discrete Devices Graphics SJ/T10149-1991 Standard Download Decompression Password: www.bzxz.net

Electronic Industry Standard of the People's Republic of China Graphic base of electronic components graphics of semiconductor discrete device Subject content and scope of application SJ/T10149--91 This standard specifies the design specifications of semiconductor discrete device graphics in the electronic component graphic library for computer-aided design of printed circuit boards (PCBs). This standard is applicable to computer-aided design printed circuit boards. Manually designed printed circuit boards can also be used as a reference. Reference standards
GB2036
GB4728
GB5094
GB5489
SJ3181
3 Terms
Terms and definitions of printed circuits
Graphic symbols for electrical diagrams
Project codes in electrical technology
Printed board drawing
Integrated circuit graphics
Graphic library of electronic components
3.1 Semiconductor discrete devices (Semicondutordiscretedevice) generally refer to semiconductor devices in which each device in the circuit exists independently, relative to integrated circuits. Such as diodes and triodes. 3.2 Unilateral pin diodes (Unilateral pin diodes) Diodes with pins extending in the same direction. 3.3 Bilateral pin diodes (Bilateral pin diodes) Diodes with pins extending in opposite directions. 3.4: Circle package: A package with a cylindrical shell. 3.5 Rectangular package: A package with a rectangular shell. 3.6 Plain package: A package with pins located inside the mounting surface. Approved by the Ministry of Machinery and Electronics Industry of the People's Republic of China on May 28, 1991 and implemented on December 1, 1991. 3.7 Rhombic package: A package with a shell that is approximately rhombic. 3.8 Differential package: Other packages other than the above. 3.9 Bridge rectifier: SJ/T10149-91. Full-wave rectifier with four diodes connected in a bridge circuit. 3.10 Crystal oscillator: An oscillator whose AC output frequency is determined by the mechanical vibration characteristics of a piezoelectric crystal. 3.11 Signal indicator lamp: an indicator lamp that displays a certain state of a circuit by emitting light or extinguishing light. 3.12 Liquid crystal display: a display composed of liquid crystal sealed by two layers of glass. 3.13 Terms such as PCB, text node, connection plate, silk screen pattern, assembly pattern, hole pattern and logic layer are shown in GB2036 and SJ3181.
4 Semiconductor discrete device graphic structure
The block diagram of the semiconductor discrete device graphic structure is shown in Figure 1. Each semiconductor discrete device graphic structure should include its text attributes and its graphic parameters in PCB design. And it is required that the graphics established according to this graphic structure can be converted into physical components through functional assembly. 4.1 Structural description of semiconductor discrete devices
The left part of Figure 1 specifies the text attributes of the semiconductor discrete device structural description, including the semiconductor discrete device classification name, model name, logic name, text node, connection node, appearance parameters and positioning method. 4.2 Graphic parameters of semiconductor discrete devices in PCB design The right part of Figure 1 specifies the graphic parameters of semiconductor discrete devices. The content includes silk screen graphics, assembly graphics, connection pads and hole diagrams.
4.3 Representation of semiconductor discrete device graphics The various parts of the semiconductor discrete device graphics in Figure 1 are represented by two tables, Table 1 and Table 2; Table 1 includes the types and parameters of connection pads and hole diagrams; Table 2 includes the text attributes of graphics, silk screen graphics and assembly graphics. 4.4 Storage method of semiconductor discrete device graphics structure parameters A semiconductor discrete device graphics structure parameter should be stored in the electronic component graphics library as a graphic element index set. 5 Principles and methods of semiconductor discrete device graphics layering 5.1 Layering principles
Graphic layering should be conducive to library management; it is conducive to data extraction for computer-aided design, manufacturing and testing of PCBs. 5.2 Layering method
Each physical layer of a printed circuit board includes many different graphic elements. The computer-aided design system should store these graphic elements separately according to their properties on different logical layers in the system. The logic layer can be divided into the following according to the different types and uses of semiconductor discrete device graphics:
a. Device layer (the logic layer for device transfer and positioning); 2
SJ/T10149-91
Connection pad
Assembly graphics
Silk screen graphics
Isolation pad
Ground grid graphics
Power graphics
Resistance (assistance) solder salt
Internal layer connection pad
Surface layer pad
Positioning method
Appearance parameters
Text node
Reverse node
Logic name| |tt||Model name
One-pin positioning
Surface layer pad graphic layer;
Internal layer connection pad graphic layer;
Resistance (auxiliary) pad graphic layer:
Power supply graphic layer;
Ground grid graphic layer:
Logic name layer,
Model name layer;
Silk screen graphic layer,
Assembly drawing layer;
Hole layer;
Connection node layer;
Pin number layer,
Other layers.
SJ/T10149—91
The provisions on the graphic structural parameters of semiconductor discrete devices specify the parameters of Tables 1 to 2 item by item as follows: Table 1 Semiconductor discrete device structure description table
Surface layer pad
Internal layer
Connecting pad
Resistance (auxiliary) pad
Isolation pad
Geometric parameters
Note: See Figure 3 for the power supply and ground grid graphics.
一Connection pad, hole diagram type and parameters
Geometric type
Ellipse
Oval
Wire mesh shape
Assembly ring
SJ/T10149-91
Table 2 Semiconductor discrete device structure description table
Classification name
Model name
Text node
Font parameters
Appearance parameters
Positioning method
Note: The graphic line width is generally 0.30mm.
6.1 Category Name
Semiconductor discrete devices are divided into:
Text attributes, silk screen graphics and assembly graphics sub-categories
Logic name
Default font
Diode (Appendix C Figure CI and Figure C2 for the outline drawing)Tube
Unidirectional pin diode such as: 2DW12, see Table B1 in Appendix B. Bidirectional pin diode such as: 2AP7, see Table B2 in Appendix B. Special diode.
Transistor (Appendix C Figure C3 to Figure C8 for the outline drawing)HeightWww.bzxZ.net
Selected font
Line width
Appearance size
Length × width
Circular package transistor such as: 3DG100, see Table B3 in Appendix B, and 3AX61, see Table B4 in Appendix B. Rectangular package transistors
For example: 3DG325, see Table B5 in Appendix B.
Plane package transistors, such as: 2G913, see Table B6 in Appendix B. Diamond package transistors
Special package transistors
6.1.3 Others
6.2 Model name
For example, 3DD201, see Table B7 in Appendix B.
For example: 3DG317, see Table B8 in Appendix B.
Refers to the product model of semiconductor discrete devices. 6.3 Logic name
Consists of letters and numbers. Letters are selected according to the provisions of GB5094. 6.4 Text node
SJ/T10149—91
Used to write model names, logic names and other text attributes. 6.5 Fonts
You can use either the computer-defined font or the self-selected font. For the latter, the following are generally used: font height ≥ 1.5mm, font width ≥ 1.0mm, font line width ≥ 0.2mm.
6.6 Number of pins
The total number of pins of a semiconductor discrete device.
6.7 Pin diameter
If the cross section of the pin is circular, it is expressed by its diameter; if the cross section is rectangular, it is expressed by the length of its diagonal. 6.8 Shell size
Refers to the size of the shell. If the circular package is expressed by its diameter, if the cross section of the shell is rectangular, it is expressed by its length multiplied by its width. For other packages, it is expressed by the largest size of its top view on the two coordinate axes. 6.9 Outline size
Refers to the maximum size of the semiconductor discrete device view during layout. 6.10 Positioning method of semiconductor discrete devices
Generally, 1-pin positioning is adopted.
The 1-pin of a semiconductor discrete device, for a triode, generally refers to E (emitter); for a diode, generally refers to the positive electrode. 6.11 Silkscreen graphics
Silkscreen graphics generally adopt the following methods:
6.11.1 Diode silkscreen graphics are represented by diode symbols. The symbol is drawn in accordance with GB4728, or represented by a rectangle with a cut corner, and the cut corner end represents the positive electrode.
6.11.2 The silk screen pattern of a circular packaged transistor is represented by a circle, or a pattern formed by adding a protrusion to a circle. See Table B3 and B4.
6.11.3 The silk screen pattern of a rectangular packaged transistor is represented by a rectangle. See Table B5. 6.11.4 The silk screen pattern of a planar packaged transistor (with pins) is represented by three small line segments. See Table B6. 6.11.5 The silk screen pattern of a diamond packaged transistor is represented by a diamond-like pattern. See Table B7. 6.11.6 The silk screen pattern of a special-shaped packaged transistor is represented by a corresponding simplified shape. See Table B8. 6.12 Assembly graphics
Represented in accordance with the graphic symbols specified in GB4728 or a simplified shape plus the pin position. Draw the printed board assembly drawing in accordance with the provisions of GB5489. 7 Other discrete devices
Other discrete devices can be processed in a similar way to components with similar appearance parameters. For components such as bridge rectifiers, crystal oscillators, signal indicators and liquid crystal displays, their text attributes, silk screen graphics and assembly graphics can refer to the above chapters and relevant standards of the graphics library for processing.
8 Basic network and connection plate geometry
8.1 The basic grid
Use 2.54mm or 2.50mm.
8.2 Connection plate geometry
8.2.1 Surface layer pads can be circular, rectangular, elliptical and oblong. When the pin diameter d≤0.8mm, its graphic parameters shall be selected according to the provisions of Table A1 in Appendix A; when 0.8mm
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