This standard specifies the test methods for the turn-off ratings and characteristics of P-gate turn-off thyristors. The test methods and requirements for the general electrothermal characteristics and ratings of turn-off thyristors shall comply with the provisions of relevant standards. This standard applies to the testing of turn-off thyristors. GB/T 15293-1994 Thyristor Test Methods Turn-off thyristors GB/T15293-1994 Standard Download Decompression Password: www.bzxz.net

National Standard of the People's Republic of China
Measuring methods for thyristorGate turn-of-t thyristor
Subject content and scope of application
GB/T 15293—94
This standard specifies the test methods for the turn-off ratings and characteristics of P-gate turn-off thyristors. The test methods and requirements for the general electrical and thermal properties and ratings of turn-off thyristors shall comply with the provisions of relevant standards. This standard applies to the testing of turn-off thyristors. 2 Reference standards
GB/T15291 Semiconductor devices Part 6 Thyristors 3 Turn-off peak current (1GQM)
3.1 The turn-off peak current of the turn-off thyristor shall be tested under specified conditions. 3.2 Circuit diagram
Figure 1 Turn-off peak current test circuit
T Test turn-off thyristor; G—power supply, Rc—gate resistor, RL-adjustable load resistor; R1.R2—non-inductive resistor: B—gate trigger, turn-off and reverse bias power supply 3.3 Circuit description and requirements
Approved by the State Administration of Technical Supervision on December 7, 1994 and implemented on October 1, 1995
GB/T15293-94
D, (fast diode), R, (non-inductive resistor) and C, (non-inductive capacitor) form an absorption circuit. Y, Y, and Y, are connected to the Y axis input of the four-trace oscilloscope. The circuit should be able to suppress overvoltage (VDy in Figure 2) 3.4 Measurement procedure
R, stacked on the sky. Adjust the power supply G so that the off-state voltage of the turn-off thyristor reaches the specified value, b, use B to turn on the turn-off thyristor, and gradually reduce RL to increase the anode current to the turn-off peak current value. Apply a gate current with a specified amplitude and rise rate by B to turn off the turn-off thyristor, and at the same time apply a specified off-state voltage with a specified rise rate to the turn-off thyristor. In this way, the turn-off peak current should be able to be turned off, and the inspection is qualified. The current and voltage of the anode and gate during the turn-off process can be observed by a four-trace oscilloscope, and its waveform is shown in Figure 2. ik
It= Ircgh
Figure 2 Anode and gate current and voltage waveforms at shutdown u
t--storage time +te-fall time st shutdown time, IGe gate shutdown current; VeQ--gate shutdown voltage; V--the first peak of the off-state voltage added again-maintaining current: d:/dr--the slope of the line connecting the two points 0.1ea and 0.5I 3.5 specified conditions
a. Junction temperature: Tt
On-state current: Turnable peak current ITcQMGB/T1 5293—94
The duration of the on-state current is determined by the ability to maintain conduction and the negligible junction temperature rise. The repetition rate of the on-state current is 1Hz or several Hzl
plus off-state voltage: 0.5VDRM or 0.67VDRM plus off-state voltage rise rate, ≥50V/μgd. Gate turn-off current: 0.5ITGQM
Gate turn-off current rise rate: ≤50A/g; Gate reverse bias, ≤18V;
C,: ≤2 μF,
R,: 200 or as specified in the detailed specifications! g.
Rc: as specified in the detailed specifications.
Turn-off time (tg)
Measure the turn-off time of the turn-off transistor under specified conditions. 4.2 Circuit Diagram
The circuit is formed by connecting a sampling resistor in series to the cathode of the turn-off thyristor under test in Figure 1. 4.3 Circuit Description and Requirements
The circuit requirements are the same as those in 3.3.
4.4 Measurement Procedure
Maintain the junction temperature of the turn-off thyristor at TON
Use B to trigger the turn-off thyristor, adjust RL (Figure 1) so that the anode current reaches ITGQM1, and use B to apply a specified gate turn-off current with a specified rise rate; use an oscilloscope connected in parallel with the sampling resistor to observe the storage time and fall time, and the sum is the turn-off time (see Figure 2). d.
4. 5 Specified conditions
Junction temperature: Tm;
On-state current: turn-off peak current ITugm*b.bzxZ.net
The duration of the on-state current is determined by the ability to maintain conduction and ignore the junction temperature rise. The repetition frequency of the on-state current is 1Hz or several Hz,
Add off-state voltage: 0.5VDRM or 0.67VDRM plus off-state voltage rise rate: ≥50V/μsd, gate turn-off current: ≤0.5ITGQM
Gate turn-off current rise: ≤50A/us
e. Gate reverse bias, ≤18 V;
R,: 20mV, as specified in the detailed specifications!
hRo: as specified in the detailed specifications.
5 Gate Turn-off Current and Voltage (ic and Vco) 5.1
Measure the gate turn-off current and gate turn-off voltage of the turn-off thyristor under specified conditions. 5.2 Circuit Diagram
The circuit diagram is the same as Figure 1.
5.3 Circuit Description and Requirements
The circuit description and requirements are the same as those in 3.3.
5.4 Measurement Procedure
a. Keep the turn-off thyristor at junction temperature T.
GB/T 15293-94
b. Use B to trigger the turn-off thyristor, adjust R (Figure 1) to make the anode current reach ITceMC, use B to apply the gate turn-off current with a specified opening rate (the current value changes from large to small), turn off the turn-off thyristor, so that the minimum gate current and corresponding gate voltage of the turn-off thyristor can be turned off, that is, the gate turn-off current and voltage 5.5 Specified conditions
a. Junction temperature: Tmi
b. Turn-off peak current; Incou
The duration of the on-state current is determined by both maintaining conduction and ignoring the junction temperature rise. The repetition frequency of the on-state current is 1Hz or several Hz;
C. Add off-state voltage: 0.5V/mem or 0.67VpRH Add off-state voltage rise rate: ≥50V/us; d. Gate turn-off current rise rate: ≤50A/use, Gate reverse bias: ≤18V
f. C,i≤2 μF;
g: R: 200 or as specified in the detailed specifications: h. Rc: as specified in the detailed specifications.
GB/T 15293-94
Appendix A
Terms of turn-off transistors
(Supplement)
The terms of turn-off transistors, in addition to the general terms which shall comply with the relevant provisions of GB2900.32 "Electrical Terminology - Power Semiconductor Devices", shall also comply with the following provisions
A1 Turn-off current (Ieo): the anode current that can be turned off by gate control A2 Turn-off peak current (ITGGM): the maximum anode current that can be turned off by gate control under specified conditions 43 Storage time (s): the time from the moment the gate turn-off current reaches 10% of its peak value to the moment the anode current drops to 90% of the maximum turn-off current when turning off
A4 Fall time (e): the time from the moment the anode current drops to 90% of the maximum turn-off current to the moment the anode current stops falling rapidly when turning off.
A5 (gate control) turn-off time (t): the sum of the storage time and the downtime) 46 Gate reverse peak power (PRGM): the product of the gate reverse peak current and the gate reverse peak voltage under specified conditions, A7 Gate reverse average power (PRG
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