This standard specifies the method for indicating the grades of semiconductor polycrystalline, single crystal, wafer and epitaxial wafer products. This standard is applicable to the compilation of semiconductor material grades. GB/T 14844-1993 Method for indicating the grades of semiconductor materials GB/T14844-1993 Standard download decompression password: www.bzxz.net

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National Standard of the People's Republic of China
GB/T14844-93
Method for indicating the brand of semiconductor materials
Designations of semiconductor materials1993-12-24 Issued
National Technical Supervision Bureau
1994-09-01 Implementation
National Standard of the People's Republic of China
Method for indicating the brand of semiconductor materials
Ilesignations of semiconductor materials1Subject content and scope of application
This standard specifies the method for indicating the brand of semiconductor products, single products, wafers and epitaxial wafers. GB/T14844-93
This standard is applicable to the compilation of the inventory number of semiconductor materials. When compiling national standards and industry standards, the brand indication method specified in this standard should be adopted. Product out! 2 Brand classification
According to the product structure and product color, semiconductor material brands are divided into four categories: multi-brand, single product, display wafer and epitaxial wafer. 3 Brand representation method
3.1 Multi-brand semiconductor brands are represented as follows:
(China)
2, 3.4, 5 represent the first to fifth items of the serial number. 3.1.1 The first dot of the brand represents the production method or special process of the product, or the production method and special process, respectively, in English. The first capital letter of the combination, AC in this text represents filter;
hIR represents external optical application; bzxz.net
R represents reduction zone melting method.
eZ represents reduction zone melting method.
3.1.2 In the second item of the brand name, P indicates polyurethane, and the molecular formula indicates the product shape. 3.1.3 In the third item of the brand name, the first half of the product shape is expressed in English: 1 indicates ladder shape, :
.N indicates block shape. 3.1.4 In the third item of the brand name, the number in brackets indicates impurities. 3.1.5 In the third item of the brand name, the grade of the product is expressed in Arabic numbers. National Technical Supervision, 1993-12-24, approved, 1994-09-01.
GR/T 1±844—93
3.1.6 If the product does not emphasize the production method or shape, or does not contain impurities, etc., the corresponding part of the brand name can be omitted. 3. 1. 7 Example: PSiN1 represents first-grade bulk spherical product: 2-P represents first-grade zone melting ingot; R-PGe1 represents first-grade wire mesh ingot. 3.2 Single market variety number The brand number of semiconductor products is expressed as: 1, 2, 3, representing the first to fourth items in the table respectively. 32.1 The first item of the brand name indicates the production method of the single crystal, which is indicated by the first letter of the English word or the combination of the first letter of the English word, where:
(& indicates direct method)
FZ indicates suspended zone melting method
HI indicates horizontal method,
1.EC indicates liquid direct method:
MC indicates the general method
3.2.2 The second item of the brand name indicates the name of the single crystal by the molecular formula, 3.2.3 The third item of the brand name indicates the type of product by m-P, the element pair sign indicates the dopant NTD indicates the neutron doping method. The first item of the brand name indicates the product direction, and when the production method is not emphasized or not required, the corresponding part of the brand name can be omitted. 3.2.6 Example
C-Si-)-(100> indicates a CZ sample F2Si- (NTD-) with a crystal orientation of <100 and a suspension zone silicon single crystal with a crystal orientation of 1: HR-aAa-a(St)-Shell direction is (100 standard n-type silicon horizontal chemical practice single circuit c.
LECGrA (Cr+r) <: the table is: I00> net circuit and the number of broken direct pull monument chemical synthesis single rely: 3. 3 product oil number
semiconductor display brand is expressed as:
GU/T 14844- 93
1.2.3.4.5 represent the first to fifth items of the brand name respectively. The first item of the brand name indicates the production method of the product. Its symbol table is 3.2.1. The capital letters are as follows:
CCD indicates a chip used to make a charge-coupled device: IC indicates a chip used to make an integrated circuit: TY> indicates a chip used to make a discrete device: SC indicates a chip used to make a solar cell device. The second item of the brand name is represented by a molecular formula. The second item of the brand name indicates the type of chip, which is represented by the capital letters of the first letters of the English letters, among which:
indicates a cut chip
LW indicates a single-sided polished chip
HI.W indicates an effective side polished chip,
EtW Indicates a wafer:
PW indicates a single-sided polished wafer:
BPW indicates a double-sided polished wafer:
DW indicates a sensitive wafer!
GT indicates a getter wafer.
The symbol in the fourth item of the brand number indicates the same as 3.2. The fifth item of the brand number 3.3.5 indicates the crystal orientation using the crystal index. 3.3.6 If the wafer does not emphasize the production method or special connection, or the crystal is not doped, the corresponding part of its brand number can be omitted. 3.3.7 Example:
Cz-Si.PW-n(S5)-(1!1) indicates that the n-type potential direct-pull silicon single crystal is <111>. D.F2-Si-BLW-n(NTD ）<111 indicates the type of Zhonglian floating zone melt silicon single crystal double-sided polished wafer with the orientation of <111>. 3.4 Epitaxial wafer brand
The brand of semiconductor epitaxial wafer is represented as:
1, 2, 3, 4 represent the first to fourth items of the brand respectively, and the first item of the brand indicates the length of the epitaxial wafer, which is represented by the capital form of the English letter combination. Among them,
VFE indicates gas swept epitaxy:
1.PE indicates reduced carbon extension!
MNE indicates separation;
MOV indicates chemical vapor phase flow of residual organic compounds: d.
The second item of the brand is the molecular formula to indicate the name of the epitaxial wafer. 3. 4. 3
The third item of the grade indicates the structure of the epitaxial wafer. The element code in the bracket indicates the thermal dopant, which is represented by the following symbols: n/n indicates the growth of an n-type epitaxial layer on an n-type substrate: b.
P/p* indicates the growth of a p-type epitaxial layer on a p-type substrate: s
GB14B44—93
c./p (or p/n) indicates the growth of an epitaxial layer of the opposite conductivity type on a p-type or n-type substrate; dn/(or p/I) indicates the growth of a p-type epitaxial layer on an insulating substrate: / indicates the growth of a p-type epitaxial layer on a II-type substrate. The fourth item of 3.4.4 is indicated by the index of the product, and 3.4.5 is indicated by: VPE-Si-/+ (P/Sb) <10) indicates that the crystal orientation is (I) and the epitaxial layer is a vapor phase silicon epitaxial wafer with phosphorus replaced. b. LPEGaA%n/(Sn/Te)-(1n0) indicates that the ratio is <160> and the bottom epitaxial layer is n-type liquid phase elastomer epitaxial wafer, additional instructions, this standard is proposed by China Nonferrous Metals Industry Corporation. This standard is drafted by China Nonferrous Metals Industry Corporation Standard Design and Research Institute. The drafters of this standard are Wu Juli and Shuai Jianzhong.
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