This specification specifies the detailed requirements for 3DG120 NPN silicon high frequency low power transistors (hereinafter referred to as devices). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices". SJ 20060-1992 Semiconductor Discrete Devices 3DG120 NPN Silicon High Frequency Low Power Transistor Detailed Specification SJ20060-1992 Standard download decompression password: www.bzxz.net
This specification specifies the detailed requirements for 3DG120 NPN silicon high frequency low power transistors (hereinafter referred to as devices). This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Discrete Semiconductor Devices".

GB 4587-1984 Bipolar Transistor Test Methods
GB 7092-1986 Outline Dimensions of Semiconductor Integrated Circuits
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices

1 Scope
People's Republic of China Electronics Industry Military Standard Semiconductor Discrete Devices
3DG120 Type NPN Silicon High Frequency Low Power Transistor Detail Specification
Senicontlerctor discrete deviceDetail specificationfersiliconNpN tigih--frequencylow--power transistor of type 3DG1201.1 Subject Content
SJ 2006092
This specification specifies the detailed requirements for 3DG120 type NPN silicon high power transistor (hereinafter referred to as device>. This device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GIB33 Semiconductor Discrete Device General Specifications".
China Electronics Industry Corporation Issued on November 19, 1992 1
1993-05-01 Implementation
1.2 Dimensions
S.J20060—92
The dimensions shall comply with the A3-02B type in the dimensions of GB7581 card conductor discrete devices and the following provisions, see Figure 1:
Terminal polarity:
1. Emitter
3. Collector
Fpu. 30f M
0. 35 (MxM
Figure 1 Dimensions
A3-02B
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1.3 Maximum Ratings
3G120A
3DG120B
3DG120C
3DG120D
Te=25c
SI 20060-92
Note: 1) When T25C, derate linearly by 2.9mW/C. 2) When Te>25C, derate linearly by 10mW/C. Main electrical characteristics (TA25C)
3DG120A
3DG120B
3DG120C
3DG120D
3EG120A
3XG120F
3DG120C
3DG120D
Minimum value
Maximum value
J-IMHz
VeB 1V
Minimum value:Maximum value
(Ver-10V)
Je=3mA
Minimum value
Ver-10V
Ic—50mA
f-100MHz
Minimum valueMaximum value
Note: 1) Pulse method (see 4.5.1).
2 Referenced Documents
GB4587—84 Bipolar transistor test method Maximum value
Ic-30mA
Minimum value
Ie=50mA
In=5mA
Minimum value
GB7581—81 Dimensions of discrete semiconductor devices GJB 33—85
General specification for discrete semiconductor devices
GJB128—86 Test methods for discrete semiconductor devices Maximum value
—65～+200
Ic=100mA
Minimum value
le=50mA
Minimum value
Maximum value
Maximum value
Ver =10V
Ic 30mA
f—30MHz
Minimum value Maximum value
3 Requirements
3.1 Detailed requirements
SJ 20060-92
All requirements shall comply with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions
The design, structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating
The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or immersion tin. The selection of terminal material and coating requirements or other requirements shall be clearly specified in the contract or order (see Chapter 6). 3.3 Marking
The marking of the device shall comply with the provisions of GJB33.
4 Quality Assurance Provisions
4.1 Sampling and Inspection
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4. 2 Qualification Inspection
Qualification Inspection shall be in accordance with the provisions of GJB 33.
4.3 Screening (GT and GCT Grade Only)
Screening shall be in accordance with Table 2 of GJB 33 and this specification. The following tests shall be performed in accordance with Table 1 of this specification, and devices exceeding the specified limit values ​​shall not be accepted.
(GJB33 Table 2)
7. Intermediate parameter test
8. Power aging
9. Final test
4.3. 1 Power aging conditions
Power aging conditions are as follows,
TA=25±3
VcB=- 20V(3DG120A,C)
Vce - 30V (3DG120B,D)
P tot =- 5 00m W
Note: It is not advisable to add a heat sink or a strong fan to the device. 4.4 Quality-Conformity Inspection
Ieoi and hyca
See 4.3.1
Test Wear test
According to Group A2 in Table 1 of this specification;
Mor=100% of the initial value or 5nA, the larger one+4m;=±20% of the initial value
Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A Inspection
Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B Inspection
TKAONKAca
SJ 2006092
Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the change amount () requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.4.3 Group C test
Group C test shall be carried out in accordance with the provisions of GJB 33 and Table 3 of this specification. The final test and variation () requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.5 Inspection and test methods
The inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions: 4.5.1 Pulse test
The pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB 128, Table 1 A Group by inspection
Inspection or test
AI group
Appearance and mechanical inspection
A2 group
Collector-base breakdown voltage
3nG120A.C
3DG120B.D
Collector-emitter breakdown voltage
3DG120A.C
3DG120B,D
Emitter-base breakdown voltage
Single electrode-base cut-off current
3DG120A,C
3DG120B,D
Emitter-base cut-off current
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Emitter-emitter saturation voltage drop
Base-emitter voltage drop
GJR128
2. 9. 2. 1www.bzxz.net
This specification
Appendix A
2. 9. 2. 2
GB4587
Tea. Components
Emitter-base open
Ic=10μA
Emitter-evaporator open
fe 5mA
Pulse method (see 4.5.1)
Collector-base open
Ig=10pA
Emitter-base parallel
Vce= 30
Voa-50V
Emitter-base open
Ve=10V
4e=0. 5mA
Ver-10V
Is = 3mA
Yee=JoV
fe =- 30mA
Vcr-10V
fe=100mA
peptide pulse method (see 4. 5.1 item)
Ie= 50mA
Ig=5mA
Ic=50mmA
HTPD symbol
Vaeexca
Limit value
Minimum value Maximum value
VARTEB)
Inspection or test
A3 group
High temperature operation:
Collector-base cut-off resistance| |tt||3DG120A.C
3DC120B,D
Low temperature operation:
Forward current transfer ratio
A4 grouping
Open circuit output capacitance
Equal frequency
3DG120A,B
3DG120C.D
Dynamic gain
A5.A6 and A7 Grouping
Not applicable
Inspection or test
B1 Grouping
Solderability
Durability of marking
B2 Grouping
Thermal shock (temperature cycle)
a. Fine leak detection
l. Coarse leak detection
Final test:
SJ 20060—-92
Continued Table 1
GB4587
Ta=+150r
Emitter-base open circuit
VecB— 30V
Vcn= 50V
TA-—55C
V= 10V
Ic-30mA
Vc6-10V,Je-- 0
↑=1MHz
Ver - 10V.Ic - 30mA
f-100MHz
Vee-lov
Ic=30mA
f=30MHz
Table B Group Inspection
GJB128
See Table 4 Steps 1, 3 and 4
LTPL Symbol
Limit Value
Minimum Maximum Value
TTKAONKACa-
B3 Group
Inspection or Test
Edge Working Life
Final Test:
B+ Group
Open Width Internal Visual Inspection
(Design Verification》
Bond Strength
B5 Group
Not applicable
R6 group
High temperature life
(not working)
Final test,
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Junction leak test
b. Rough leak test
Comprehensive temperature/humidity cycle test
Appearance and mechanical control test
Final test,
C3 group
Variable frequency vibration
Value setting and invitation
Final test:
SJ 2006092
Continued Table 2
GJE128
Veg=20V ,Ptu- 500m
TA=25±3℃
Not allowed to add heat sink or strong air cooling to the deviceSee Table 4 + Step 2 and 5
Objective gun standard According to the design at the time of identification
TA-200℃
See Table 4, Step 1,3 and 4
Table 3 C group inspection
GJB128
See Figure 1
Test condition A
Test condition E
Dead Table 4, Step 1.3 and 4
See Table 4, Step 1,3 and 4
One device per batch, D Failure
20(C=0)
Limiting value
Minimum value Maximum value
C4 Grouping
Inspection or test
Salt gas (when applicable)
C5 Group
Not applicable
C6 group
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG120A.C
3DG120B, D
Collector-base cut-off current
3XG120A.C
3DG120B.D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ 20060-92
Continued Table 3
GJB128
TA-25±3℃,Vrg-20V
Pu=500mW
Device with heat sink or strong wind is not allowed
See Table 4, steps 2 and 5
Table 4 Final test of Group B and Group C
GB 4587
Emitter-base open circuit
Vea=30V
Ven=50V
Emitter-base open circuit
Ven=30V
Vra-50V
Ia = 50mA
Ia-SmA
Ver=10V
Iα= 30mA
Vere-10V
= 30mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB 33,
6 Notes
VeEuants
Alipagu
The contract or order shall specify the required terminal materials and layers (see Article 3.2.1) Limit value
Minimum value Maximum value
Limit value
Minimum value
Maximum value
Initial value
-rKAONKAca-
A1 Purpose
SJ2006092
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test Circuit
Test Circuit See Figure A1.
Voltage Source
Turn over A1 Collector-Emitter Breakdown Voltage Test Circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the maximum value of (BR)CED at the specified test current, the transistor is qualified. Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation, and this specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main contributors to this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. The project code is B01019.Rough leak detection
Final test:
SJ 20060—-92
Continued Table 1
GB4587
Ta=+150r
Emitter-base open
VecB— 30V
Vcn= 50V
TA-—55C
V= 10V
Ic-30mA
Vc6-10V,Je-- 0
↑=1MHz
Ver - 10V.Ic - 30mA
f-100MHz
Vee-lov
Ic=30mA
f=30MHz
Table B Group Inspection
GJB128
See Table 4 Steps 1, 3 and 4
LTPL Symbol
Limit Value
Minimum Maximum Value
TTKAONKACa-
B3 Group
Inspection or Test
Edge Working Life
Final Test:
B+ Group
Open Width Internal Visual Inspection
(Design Verification》
Bond Strength
B5 Group
Not applicable
R6 group
High temperature life
(not working)
Final test,
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Junction leak test
b. Rough leak test
Comprehensive temperature/humidity cycle test
Appearance and mechanical control test
Final test,
C3 group
Variable frequency vibration
Value setting and invitation
Final test:
SJ 2006092
Continued Table 2
GJE128
Veg=20V ,Ptu- 500m
TA=25±3℃
Not allowed to add heat sink or strong air cooling to the deviceSee Table 4 + Step 2 and 5
Objective gun standard According to the design at the time of identification
TA-200℃
See Table 4, Step 1,3 and 4
Table 3 C group inspection
GJB128
See Figure 1
Test condition A
Test condition E
Dead Table 4, Step 1.3 and 4
See Table 4, Step 1,3 and 4
One device per batch, D Failure
20(C=0)
Limiting value
Minimum value Maximum value
C4 Grouping
Inspection or test
Salt gas (when applicable)
C5 Group
Not applicable
C6 group
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG120A.C
3DG120B, D
Collector-base cut-off current
3XG120A.C
3DG120B.D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ 20060-92
Continued Table 3
GJB128
TA-25±3℃,Vrg-20V
Pu=500mW
Device with heat sink or strong wind is not allowed
See Table 4, steps 2 and 5
Table 4 Final test of Group B and Group C
GB 4587
Emitter-base open circuit
Vea=30V
Ven=50V
Emitter-base open circuit
Ven=30V
Vra-50V
Ia = 50mA
Ia-SmA
Ver=10V
Iα= 30mA
Vere-10V
= 30mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB 33,
6 Notes
VeEuants
Alipagu
The contract or order shall specify the required terminal materials and layers (see Article 3.2.1) Limit value
Minimum value Maximum value
Limit value
Minimum value
Maximum value
Initial value
-rKAONKAca-
A1 Purpose
SJ2006092
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test Circuit
Test Circuit See Figure A1.
Voltage Source
Turn over A1 Collector-Emitter Breakdown Voltage Test Circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the maximum value of (BR)CED at the specified test current, the transistor is qualified. Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation, and this specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main contributors to this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. The project code is B01019.Rough leak detection
Final test:
SJ 20060—-92
Continued Table 1
GB4587
Ta=+150r
Emitter-base open
VecB— 30V
Vcn= 50V
TA-—55C
V= 10V
Ic-30mA
Vc6-10V,Je-- 0
↑=1MHz
Ver - 10V.Ic - 30mA
f-100MHz
Vee-lov
Ic=30mA
f=30MHz
Table B Group Inspection
GJB128
See Table 4 Steps 1, 3 and 4
LTPL Symbol
Limit Value
Minimum Maximum Value
TTKAONKACa-
B3 Group
Inspection or Test
Edge Working Life
Final Test:
B+ Group
Open Width Internal Visual Inspection
(Design Verification》
Bond Strength
B5 Group
Not applicable
R6 group
High temperature life
(not working)
Final test,
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Junction leak test
b. Rough leak test
Comprehensive temperature/humidity cycle test
Appearance and mechanical control test
Final test,
C3 group
Variable frequency vibration
Value setting and invitation
Final test:
SJ 2006092
Continued Table 2
GJE128
Veg=20V ,Ptu- 500m
TA=25±3℃
Not allowed to add heat sink or strong air cooling to the deviceSee Table 4 + Step 2 and 5
Objective gun standard According to the design at the time of identification
TA-200℃
See Table 4, Step 1,3 and 4
Table 3 C group inspection
GJB128
See Figure 1
Test condition A
Test condition E
Dead Table 4, Step 1.3 and 4
See Table 4, Step 1,3 and 4
One device per batch, D Failure
20(C=0)
Limiting value
Minimum value Maximum value
C4 Grouping
Inspection or test
Salt gas (when applicable)
C5 Group
Not applicable
C6 group
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG120A.C
3DG120B, D
Collector-base cut-off current
3XG120A.C
3DG120B.D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ 20060-92
Continued Table 3
GJB128
TA-25±3℃,Vrg-20V
Pu=500mW
Device with heat sink or strong wind is not allowed
See Table 4, steps 2 and 5
Table 4 Final test of Group B and Group C
GB 4587
Emitter-base open circuit
Vea=30V
Ven=50V
Emitter-base open circuit
Ven=30V
Vra-50V
Ia = 50mA
Ia-SmA
Ver=10V
Iα= 30mA
Vere-10V
= 30mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB 33,
6 Notes
VeEuants
Alipagu
The contract or order shall specify the required terminal materials and layers (see Article 3.2.1) Limit value
Minimum value Maximum value
Limit value
Minimum value
Maximum value
Initial value
-rKAONKAca-
A1 Purpose
SJ2006092
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test Circuit
Test Circuit See Figure A1.
Voltage Source
Turn over A1 Collector-Emitter Breakdown Voltage Test Circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the maximum value of (BR)CED at the specified test current, the transistor is qualified. Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation, and this specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main contributors to this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. The project code is B01019.D Failure
20(C=0)
Limiting value
Minimum value and maximum value
C4 Group
Inspection or test
Salt gas (when applicable)
C5 Group
Not applicable
C6 group
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG120A.C
3DG120B, D
Collector-base cut-off current
3XG120A.C
3DG120B.D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ 20060-92
Continued Table 3
GJB128
TA-25±3℃,Vrg-20V
Pu=500mW
Device with heat sink or strong wind is not allowed
See Table 4, steps 2 and 5
Table 4 Final test of Group B and Group C
GB 4587
Emitter-base open circuit
Vea=30V
Ven=50V
Emitter-base open circuit
Ven=30V
Vra-50V
Ia = 50mA
Ia-SmA
Ver=10V
Iα= 30mA
Vere-10V
= 30mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB 33,
6 Notes
VeEuants
Alipagu
The contract or order shall specify the required terminal materials and layers (see Article 3.2.1) Limit value
Minimum value Maximum value
Limit value
Minimum value
Maximum value
Initial value
-rKAONKAca-
A1 Purpose
SJ2006092
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test Circuit
Test Circuit See Figure A1.
Voltage Source
Turn over A1 Collector-Emitter Breakdown Voltage Test Circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the maximum value of (BR)CED at the specified test current, the transistor is qualified. Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation, and this specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main contributors to this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. The project code is B01019.D Failure
20(C=0)
Limiting value
Minimum value and maximum value
C4 Group
Inspection or test
Salt gas (when applicable)
C5 Group
Not applicable
C6 group
Steady-state working life
Final test:
Inspection or test
Collector-base cut-off current
3DG120A.C
3DG120B, D
Collector-base cut-off current
3XG120A.C
3DG120B.D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ 20060-92
Continued Table 3
GJB128
TA-25±3℃,Vrg-20V
Pu=500mW
Device with heat sink or strong wind is not allowed
See Table 4, steps 2 and 5
Table 4 Final test of Group B and Group C
GB 4587
Emitter-base open circuit
Vea=30V
Ven=50V
Emitter-base open circuit
Ven=30V
Vra-50V
Ia = 50mA
Ia-SmA
Ver=10V
Iα= 30mA
Vere-10V
= 30mA
Note: 1) For this test, devices exceeding the limit values ​​of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB 33,
6 Notes
VeEuants
Alipagu
The contract or order shall specify the required terminal materials and layers (see Article 3.2.1) Limit value
Minimum value Maximum value
Limit value
Minimum value
Maximum value
Initial value
-rKAONKAca-
A1 Purpose
SJ2006092
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test Circuit
Test Circuit See Figure A1.
Voltage Source
Turn over A1 Collector-Emitter Breakdown Voltage Test Circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the maximum value of (BR)CED at the specified test current, the transistor is qualified. Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation, and this specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification is drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main contributors to this specification are Wang Changfu, Xie Peilan, and Wang Chenglin. The project code is B01019.
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