Some standard content:
Ministry of Machinery and Electronics Industry of the People's Republic of China Standard SJ3243-89
Phosphated Steel Single Crystal Rods and Sheets
Published on March 20, 1989
Implemented on March 25, 1989
The Ministry of Machinery and Electronics Industry of the People's Republic of China issued the Ministry of Machinery and Electronics Industry of the People's Republic of China Standard Phosphated Steel Single Crystal Rods and Sheets
1. Subject Content and Scope of Application
SJ3243-89
This standard specifies the brand naming method, technical requirements, test methods, inspection rules, marking, packaging, transportation and storage of phosphated steel single crystal rods and sheets grown by the liquid-sealed Czochralski method (LEC). This standard applies to liquid-sealed Czochralski phosphated steel single crystal rods and sheets used in the manufacture of optoelectronic devices, microwave devices, and integrated circuit substrates. Cited standards
SJ3244.1 Measurement of Hall mobility and carrier concentration of gallium phosphate and steel materialsSJ3249.1 Test method for resistivity of semi-insulating and phosphated steel single crystalsSJ3245 Test method for dislocation of phosphated steel single crystalsGB6618
GB6619
GB6624
GB2828
GB8728
Test method for thickness and total thickness change of silicon wafersContact test method for curvature of silicon wafers
Measurement of crystal orientation of silver arsenide and silver phosphide single crystalsOrientation of active silicon polishing Visual inspection method for wafer surface quality Inspection by batch, counting and sampling procedure and sampling table (applicable to inspection of continuous batches) General safety rules for sampling of industrial chemical products 3 Nomenclature of indium phosphide single crystal rods and wafers
The brand name of indium phosphide single crystal rods and wafers consists of the following five parts: -In
The first part uses n, p or S1 to represent n-type, p-type or semi-insulating respectively; the second part is the molecular formula InP, which represents phosphide; the third part uses <×××) to represent the crystal orientation of the sample, for example 111>, and (×××) to represent the crystal plane of the wafer, such as (100).
The fourth part uses chemical element purple symbols to indicate dopants. If it is non-doped, it is not marked. The fifth part is the surface state of the wafer. P/p indicates double-sided polishing, P/E indicates one side is polished and the other side is etched; s/s indicates that both sides are cut surfaces or lightly etched surfaces. Example:
(1)p-InP<100>Zn
indicates a zinc-doped p-type phosphating steel single product rod with an orientation of <100>. (2)n-InP(100)S—P/E
indicates a sulfur-doped n-type phosphating steel wafer with one side polished and the other side etched (100). 4 Terminology
Approved by the Ministry of Medical Machinery Industry of the People's Republic of China on March 20, 1919, and implemented on March 25, 1989
4.1 Orthogonal Orientation Deviation
SJ3243-89
When slicing intentionally deviates from the (100) plane, the angle between the projection of the normal line of the wafer surface on the (100) plane and the projection of the nearest neighbor <110> direction on the (100) plane. See Appendix A. 4.2 Reference Plane
Indium phosphide is a polar semiconductor. Device and circuit processes require the determination of primary and secondary reference planes in order to obtain a specific etching groove shape. The relationship between the reference plane and the etching groove shape is shown in Appendix B. 4.2.1 Primary Reference Plane
The primary reference plane is defined as the (0T1) plane, marked with OF. The length of the primary reference plane depends on the diameter of the single crystal. 4.2.2 Secondary Reference Plane
The secondary reference plane is defined as the (0T1) plane, which is rotated 90 degrees clockwise along the primary reference plane and is marked with IF. The length of the secondary reference plane depends on the diameter of the single crystal.
5 Technical requirements
5.1 Electrical properties
The electrical properties of InP single crystal rods and sheets shall comply with those listed in Table 1 and Table 2
Impregnated elements
Carrier liquidus
(em-a)
≤1x10bzxz.net
0.5×10*.
~6×10
4x1018
4×10-
Iron content
(en/VS)
3500~4500
1200~2500
800~1600
(ppm)
Resistivity
Resistivity
0.5×10-3
~6×10-#
1.8×10-3
5×10-1
5.2 Dislocation density (EPD)
Dislocation density shall conform to Table 3
Impurity elements
5.3 Dimensions
≤5×10*
≤5×10
2×103
5×103
≤1×104
5×10*
SJ3243-89
Wafer diameter, thickness and deviation, thickness variation and curvature shall conform to Table 4. Table 4
Nan round piece
30~40mm
5.4 Orientation
5.4.1 Orientation of crystal rod
<100）±5°
Thickness and letter difference
400±25
500±25
400±25
500±25
The thickness variation of each piece is not more than
（um)
The curvature is not more than
(111>±5°
5.4.2 Orientation of crystal rod
A, (100) ±0.5
S.J3243-89
B (100) deviates 2°±0.5 from the nearest (100) ±0.5°, see Appendix A5.5 Orthogonal orientation deviation ±5
5.6 The provisions for reference surface orientation and length are shown in Figure 1 and Table 5. 1OF (main set test surface): O1) ±1
5.7 Surface defects and contamination
5.7.1 Polished surface
B (mm)
Sensitivity category
Edge notch and chipping
Radial case d>! mm
0,3mmdimm
Attached with strip
(Linear dimension>5um)
IF(secondary test surface) (oin) Main s°
Main and secondary reference surface position diagram
B, (mn)
Boundary use (min)
National area (Cm)
Small eye view surface element display
B. Submit the whole 19 products. Each clear stock has at least 2 lines, and the total length does not exceed R/2.
pieces/piece
Finally, the 905 product has no stripes on the surface, and the tea is less than 5 light particles/
SJ3243-89
The defects and stains on the polished surface of the wafer should meet the requirements of Table 6. 5.7.2 Cut or lightly etched surface
The cut or lightly etched surface of the wafer shall be free of cracks and foreign matter, and the edge notches and chipping requirements shall be met. The surface shall be polished. Note: The wafers of special specifications shall be agreed upon by the lender and the buyer. 6 Test methods
6.1 Electrical parameters
6.1.1 Phosphated steel single crystal rods, slices, Hall mobility and carrier concentration tests shall be carried out in accordance with SJ3244.1. 6.1.2 Phosphated steel single crystal rods and slices resistivity tests shall be carried out in accordance with SJ3249.1. 6.2 Dislocation density
The measurement of dislocation density of indium phosphide shall be carried out in accordance with SJ3245. 6.3 Dimensions
6.3.1 Rod diameter
The crystal diameter shall be measured with a vernier caliper with an accuracy of 0.01 mm. 6.32 Chip thickness and thickness variation
The measurement of chip thickness and thickness variation shall be carried out in accordance with GB6618. The measurement point position of coconut round chips is shown in Appendix?. 6.3.3 Curvature
The curvature of phosphated steel chips shall be carried out in accordance with GBc619. 6.4 Intercrystalline
The crystal orientation measurement of phosphated steel single product bars and sheets shall be carried out in accordance with SJ3244.36.5 The measurement of orthogonal orientation deviation
The method agreed upon by the supplier and the buyer.
6.6 The measurement of reference plane orientation and length
The method agreed upon by the supplier and the buyer.
6.7 The inspection of chip surface defects and contamination shall be carried out in accordance with GB6624. T Inspection rules
7.1 Inspection batch composition
7.1.1 Single crystal bars, each single product ingot constitutes an inspection batch. If any technical characteristic of the batch does not meet the requirements of Article 4.1, Table 1 or Table 2, Article 4.2, Table 3 and Article 4.4.1, it will be judged as unqualified. 7.1.2 Single wafers are composed of all single wafers with the same nominal size and the same characteristics to form an inspection batch. The inspection batch of single wafers is carried out according to the one-time sampling plan in the normal inspection of GB2828. 7.2 Inspection Items
All inspection items for single wafers are shown in Table 7. When the order contract stipulates otherwise, it shall be handled in accordance with the order contract. 7.3 Determination of Inspection Result
The inspection batch that has all passed the inspection of Groups A, B, C, D, E, and F in Table 7 is a qualified batch. If any group fails the inspection, the inspection batch is judged to have failed the initial inspection. 7.4 Re-inspection rules
For the inspection batch that fails the initial inspection, after all the products in the inspection batch are repaired and proved to have overcome the original defects, it is allowed to conduct re-inspection. The batch submitted for re-inspection should consist of products in the original inspection batch.
Article 4.1 Table 1 or Table 2
Article 4, 2 Table 3
Article 4.3 Table 4
Article 4.6 Figure 1 and Table 5
Article 4.7.1 Table 6
Qualified quality level
Negotiation between the supply and demand parties
Note: For Group F, if the surface failure is caused by contamination, it is allowed to conduct re-inspection after cleaning all the products submitted for inspection. The batch submitted for re-inspection should consist of products in the original inspection batch. If one inspection group is unqualified, re-inspect that inspection group. If the performance of a certain inspection group may be affected during repair, re-inspection of that inspection group should also be re-inspected. The re-inspection adopts a stricter inspection sampling plan. The inspection batch that fails the re-inspection is judged as unqualified. 75 When the purchaser receives the product, it should promptly unpack it according to the product shipping order to check whether the product is complete. All product damage caused by poor packaging quality. If it is found that the product quality does not match the product certificate, it should be reported to the supplier within one month from the date of arrival according to the original batch number, and the supply and demand parties shall negotiate to resolve it. 8 Marking, packaging, transportation and storage
8.1 After inspection, the crystal rod is wrapped with clean white soft paper and placed in a plastic box together with the certificate of conformity. Each box contains one ingot and is filled with soft foam plastic to prevent the crystal rod from moving in the box. Several plastic boxes are placed in a wooden box and the box is filled with soft stuffing. 8.2 After inspection, the wafers are placed in a special polyethylene plastic box. Several small boxes (brush-batch) together with the certificate of conformity are placed in the plastic box; several plastic boxes are placed in a wooden box, and the box is filled with soft stuffing so that the boxes will not move inside the box. 8.3 Markings
8.3.1 Markings of crystal rods
8.3.1.1 The wooden box should have the following markings:
name of manufacturer,
b. name, brand, number of product;
c. number of boxes;
d. Contract number,
Date of manufacture,
Anti-vibration and anti-moisture mark
2 Each ingot product shall be accompanied by a certificate of conformity, which shall indicate: a.
Product name, brand
All technical indicators specified in the contract;
Net weight;
SJ3243-89
d. Signature and inspection date of the inspector or inspection department; e: Name of the manufacturer
8.3.2 Marking of wafers
See 8.3.1.1 for the marking of wooden boxes.
Each batch of products shall be accompanied by a certificate of conformity, which shall indicate: Product name, brand, batch number;
All technical indicators specified in the contract;
Number of wafers;
d. Net weight;
Signature and inspection date of the inspector or inspection department; f. Name of the manufacturer.
8.4 The product must not be mixed, transported or stored with corrosive substances such as acids and alkalis during transportation and storage. 8.5 The product should be stored in a dry and clean warehouse. 8.6 Phosphorus and its compounds are toxic substances, so the regulations of GB3723 must be followed. Avoid skin contact or inhalation of phosphorus dust or vapor.
Wu Yi Lao Mian
SJ3243--89
Schematic diagram of orthogonal orientation deviation
(reference)
The most slice of wheat yeast tooth line square meat
The second grinding test mouse
The nearest <110
The projection of the normal line of the easy slice surface depression on the (150) interval "Orthogonal orientation Xie Shi
110> Projection on (10)
Surface orientation B and determine the reference surface of InP wafer, how many degrees the orthogonal orientation deviates, SJ3243-89
Schematic diagram of the relationship between the reference surface and the shape of the etching groove (reference （Part）
VP(i）X
V-shaped precision
IF(Secondary reference surface)
Inlii)
Yan Li Tan
OF(Main reference）
Additional instructions:
SJ3243-89
Appendix C
Position of thickness measurement points on elliptical sheet
(Supplement)
Position of thickness measurement points on elliptical sheet
This standard was drafted by the 55th Institute of the Ministry of Machinery and Electronics Industry. The main drafters of this standard: Peng Zhengfu, Wu Kui, 10
Unit: mm6 Phosphorus and its compounds are toxic substances, so the provisions of GB3723 must be followed. Avoid skin contact or inhalation of phosphorus dust or vapor.
Wu Yi Lao Mian
SJ3243--89
Schematic diagram of orthogonal orientation separation
(reference)
The most slice of wheat yeast tooth line square meat
The second grinding test mouse
The nearest <110
The projection of the normal line of the easy slice surface on the (150) interval "Orthogonal orientation Xie Shi
110> Projection on (10)
Surface orientation B and determine the reference surface of the InP wafer, how many degrees the orthogonal orientation deviates, SJ3243-89
Schematic diagram of the relationship between the reference surface and the shape of the corrosion groove (reference) （Part）
VP(i）X
V-shaped precision
IF(Secondary reference surface)
Inlii)
Yan Li Tan
OF(Main reference）
Additional instructions:
SJ3243-89
Appendix C
Position of thickness measurement points on elliptical sheet
(Supplement)
Position of thickness measurement points on elliptical sheet
This standard was drafted by the 55th Institute of the Ministry of Machinery and Electronics Industry. The main drafters of this standard: Peng Zhengfu, Wu Kui, 10
Unit: mm6 Phosphorus and its compounds are toxic substances, so the provisions of GB3723 must be followed. Avoid skin contact or inhalation of phosphorus dust or vapor.
Wu Yi Lao Mian
SJ3243--89
Schematic diagram of orthogonal orientation separation
(reference)
The most slice of wheat yeast tooth line square meat
The second grinding test mouse
The nearest <110
The projection of the normal line of the easy slice surface on the (150) interval "Orthogonal orientation Xie Shi
110> Projection on (10)
Surface orientation B and determine the reference surface of the InP wafer, how many degrees the orthogonal orientation deviates, SJ3243-89
Schematic diagram of the relationship between the reference surface and the shape of the corrosion groove (reference) （Part）
VP(i）X
V-shaped precision
IF(Secondary reference surface)
Inlii)
Yan Li Tan
OF(Main reference）
Additional instructions:
SJ3243-89
Appendix C
Position of thickness measurement points on elliptical sheet
(Supplement)
Position of thickness measurement points on elliptical sheet
This standard was drafted by the 55th Institute of the Ministry of Machinery and Electronics Industry. The main drafters of this standard: Peng Zhengfu, Wu Kui, 10
Unit: mm
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