This standard applies to electronic-grade argon used in the production process of semiconductor materials, discrete devices and integrated circuits. According to its use requirements, electronic-grade argon is divided into two levels, code-named: Electronic Grade Ⅰ Argon code: DZAr-Ⅰ; Grade Ⅱ Argon code: DZAr- Ⅱ SJ 2797-1987 Electronic-grade argon SJ2797-1987 Standard download decompression password: www.bzxz.net
This standard applies to electronic-grade argon used in the production process of semiconductor materials, discrete devices and integrated circuits. According to its use requirements, electronic-grade argon is divided into two levels, code-named: Electronic Grade Ⅰ Argon code: DZAr-Ⅰ; Grade Ⅱ Argon code: DZAr- Ⅱ

Standard of the Ministry of Electronics Industry of the People's Republic of China Electronic Grade Fluorine
SJ2797-87
This standard is applicable to electronic grade hydrogen used in the production process of conductor materials, discrete devices and integrated circuits. According to its convenience requirements, electronic grade nitrogen is divided into two grades, code-named: Electronic Grade I is code-named: DZAr-Ⅱ,
Electronic Grade 1 is code-named: DZAr-I.
Technical requirements
1.1 Electronic grade silicon should meet the requirements in Table 1: Table 1
Indicator name
Content, Ppm
Nitrogen content, Pms
, ppm
Methane content, Ppm
Carbon dioxide content, m
Water content, Ppm
Example
Technical indicators of electronic grade silicon
3(20.2 μm)
Use high quality silicon single crystal chemical gas
and precipitation number, etc.
Standard, the gas content in 1 is volume ratiowwW.bzxz.Net
Published by the Ministry of Electronics Industry on May 18, 1987
3 (≥0.5 μm)
Annealing, bonding and
sintering are used to give engraving, etc.
1988-10-01 Actual distribution
SJ2797-87
1,2 The content of electronic grade argon (C hydrogen) should be calculated according to the following formula: C1 00-2C%
Wherein: C hydrogen electronic grade volume percentage content; C hydrogen-" impurity volume percentage
2 Test method
2.1 The impurity content in electronic grade hydrogen should be tested according to the method specified in Table 2; Table 2 Test method for impurities in electronic grade hydrogen
Monocarbon
Dicarbon
Jinglu method standard
SI2801-87
SJ2804.1-87
SJ2304,2-A7
GBe785-85
SJ2R00-87
SJ2801-87
SJ2802-87
SI 279A-87
GB 5832 .1-86
SJ2798-87
Inspection and monitoring method name
Determination method of trace hydrogen in gas
Gas breaking pregnancy
Identification method of continuous pregnancy
"Li Wenjiaozongzong potential method (I)
Self-study grade follow-up with you strong determination method
Cross-temperature spot shrinkage chromatography (II)
Gas method and micro Determination of mother gas
electrochemical method
Determination of push-through flow in electronic grade gas
multiplex chromatography
Determination of chemical residues in electronic grade gas
Australian method for determination of rare earth substances in electronic grade gas
Transfer chromatography
Energy-induced chemical analysis in gas
Determination of trace water in grade gas
No method for determination of trace amounts of water in grade gas
Natural method
Determination of primary gas
Method for determination of concentration of gases below 0:5PP to be determined. ,8m The standard for the detection method is to be determined, 3 Inspection regulations see
SJ2797-B7
3.1 The inspection and supervision department of the electronic grade bottle unit shall conduct regular inspections according to the technical indicators, which shall comply with the provisions of this standard. 3.2 The inspection (sampling) point of electronic grade fluorine is in the intelligent section of the abandoned gas equipment of the chemical device. See the figure below
Inspection point
Figure Inspection (sampling) point position
Gas-using equipment
When the gas source before the inspection point changes, various indicators 2 to 8 must be inspected, which shall comply with the provisions of this standard. After the pipelines, connectors and filters of the chemical filling equipment are replaced and repaired, the items 4 and 8 in Table 1 shall be inspected, which shall comply with the provisions of this standard. 3.5
The test equipment and the test point should be connected by metal pipes. The pipes should be as short as possible and should not have leakage or pre-existing conditions.
This standard was proposed by the Institute of Substation Technology of the Chinese Institute of Electronics and sponsored by the Standardization Institute of the Ministry of Electronics Industry. This standard was drafted and revised by Zhao Changchun of the Standardization Institute of the Ministry of Electronics Industry, Xia Lisheng of the 24th Institute and Zhou Dinghua of the Beijing Semiconductor Device Test Center.
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