SJ 3241-1989 Gallium Arsenide Single Crystal Rod and Sheet SJ3241-1989 Standard Download Decompression Password: www.bzxz.net

Standard SJ3241--89 of the Ministry of Machinery and Electronics Industry of the People's Republic of China
Gallium arsenide single crystal rods and sheets
Published on March 20, 1989
Implementation on March 25, 1989
Published by the Ministry of Machinery and Electronics Industry of the People's Republic of China Standard SJ3241--89 of the Ministry of Machinery and Electronics Industry of the People's Republic of China
Main content and scope of application
SJ3241-89
This standard specifies the naming method, technical requirements, test methods, inspection rules, marking, packaging, transportation and storage of gallium arsenide single crystal rods and sheets prepared by the liquid-sealed Czochralski method (LEC) and the horizontal cross-pulling method (HB). This standard applies to gallium phosphate single crystal rods prepared by liquid-sealed Czochralski and horizontal transverse pulling methods for microwave devices, optoelectronic devices and integrated circuit substrates, etc.
Test methods for semi-insulating and phosphated steel single crystal resistors SJ3244.1 Measurement method for Hall mobility and carrier concentration of gallium phosphate and phosphated steel materials SJ32+5
Test method for dislocation of phosphated steel single crystals
GB6618 Test method for thickness and total thickness change of silicon wafers GB6819 Contact test method for curvature of silicon wafers SJ3244.3
3 Test method for image and orientation of phosphated single products GB6624
Visual inspection method for surface quality of polished silicon wafers GB2828
Batch-by-batch inspection counting sampling procedures and sampling tables (applicable to inspection of continuous batches) ) The naming method of gallium arsenide single crystal rods and sheets is composed of the following six parts: GaAs
The first part: n, p or SI are used to represent n-type, P-type or semi-insulating respectively; the second part is the molecular formula of gallium arsenide, 16
The third part is LEC or HB to indicate that the crystal pulling method is liquid-sealed vertical pulling method or water-sealed horizontal pulling method; the fourth part is "×××" to indicate the crystal orientation of the crystal rod, for example (111), and (×××) to indicate the crystal plane of the wafer, for example (100);
The fifth part is the element symbol, indicating the dopant. If it is non-doped, it is not marked. The sixth part indicates the surface state. P)E indicates that the single crystal wafer is polished on one side and etched on the other side. P/P indicates double-sided polished wafer. S/S indicates cut wafer.
Approved by the Ministry of Machinery and Electronics Industry of the People's Republic of China on March 20, 1989 and implemented on March 25, 1989
SI-GaAs LECNon-doped semi-insulating gallium arsenide single crystal rod: n-GaAsHB (10o)Si-P/E
indicates that the (100) face silicon-doped n-type gallium arsenide prepared by the water-based transverse pulling method is polished on one side and etched on the other side. 4 Terminology
4.1 Orthogonal orientation deviation. When the slice is intentionally deviated from the (100) face, the angle between the projection of the normal line of the wafer surface on the (100) face and the projection of the nearest (110) crystal direction on the (100) face is shown in Appendix A. 4.2 Reference plane
Gallium arsenide is a polar semiconductor. Device and circuit processes require the determination of primary and secondary reference planes in order to obtain a specific magic etch groove shape. The relationship between the reference plane and the etch groove shape is shown in Appendix B. 4.2.1 Primary reference plane: It is the (07-) plane, marked with OF, and its length depends on the diameter of the single crystal. 4.2.2 Secondary reference plane: (011) plane, rotate 90° clockwise along the main reference plane, marked with IF, and its length depends on the diameter of the single crystal.
5 Technical requirements
5,1 The electrical properties of GaAs single crystals shall comply with the provisions of Table 1 and Table 2. The electrical properties of single crystal rods shall be measured by taking a piece from each end of the rod.
Table 1 Electrical properties of semi-insulating GaAs single crystals
Electrical parameters
Resistivity (Qcm)
Migration (cm*/vs)
Note: Semi-insulating images need to be heat treated. The parameters after heat treatment shall be determined by negotiation between the supply and demand parties. Table 2 Electrical properties of doped arsenide single crystals
Conductive type
Te or Sn
Non-doped
Carrier liquidus
5~20×1017
1~4×101
1~20×1017
>1×101
1~50×1017
4~100×101
Migration
cm\/v*s
2000300
400~2600
2500 ~4000
3800~5000
100~280
40~110
1.5~4.0×10-
0.9~2.6×10-3
2.7~15.6×10-
1.2~27×10-1
1.3~15×10-
Dislocation density
SJ3241—89
The classification of gallium arsenide dislocation density grades is shown in Table 3. The dislocation density of single crystal rods is measured by taking a piece from each end of the holder. 3 Dislocation density of GaAs
5.3 External dimensions
(average value
value (em-\)
≤2x10s
5×10*
≤2×104
≤5×104
The external dimensions of GaAs single crystal rods and wafers shall comply with the requirements of Figure 1, Table 4 and Table 5. DF
Figure 1 Schematic diagram of wafer shape
LEC wafer
HBD wafer
5.4 Crystal orientation
SJ 3241-89
Dimensions of GaN single crystal rod
Thickness and thickness difference
P/E sheet: 400±25
S/S sheet: 500±25
P/E sheet: 500±25
S/S sheet: 600±25wwW.bzxz.Net
Thickness variation of each sheet
No more than (μm)
24,12，8,4
24,12,8,4
Ridge curvature
No more than (um)||t t||50，30,20
50，30,20
External size thickness and deviation of 5D-shaped GaAs single-piece rolling
P/E piece: 400±25
S/S piece: 500±25
P/E piece: 500±25
S/8 piece. 600±25
Thickness variation of each piece
Not more than (um)
24,12,3,4
24,12，8，4
Bending degree
Not more than (um)
50, 30, 20
50, 30, 20
Edge chamfer
5.4.1 Bar orientation: (111), <100), <110), the deviation between the axis and the bar direction of a single bar is required to be no more than ±5°5.4.2 Wafer surface orientation:
A <100) ±0.5°
<100> To the nearest neighbor <110) ±0.5° Deviation 2°±0.5° See Appendix A5.5 Orthogonal orientation deviation ±5°.
See Appendix B and Table 5 for the orientation and length of the reference surface. Table 6 Arsenide reference surface
Main reference surface
(mm)
Note: Etching method
Parallel to the long axis of the corrosion pit
Secondary reference
Parallel to the corrosion pit
Corrosion agent is molten potassium hydroxide, temperature is 400C, time is 15~20min. Short axis is parallel
5.7 The quality of GaAs cutting and polishing discs shall comply with the requirements of Table 6 and Table 7 respectively, and its edge collapse and defects are shown in Figure 2. A
Notch chord length!
Not more than 3.5mm
Not more than 5mm
Not more than 3.5mm
Not more than 5mm
SJ3241--89
Surface quality of GaAs single crystal cutting and grinding disc
0.3
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