title>JB/T 5839-1991 KH series 200A and above case rated reverse blocking triode high voltage thyristor - JB/T 5839-1991 - Chinese standardNet - bzxz.net
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JB/T 5839-1991 KH series 200A and above case rated reverse blocking triode high voltage thyristor
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Standard ID:
JB/T 5839-1991
Standard Name: KH series 200A and above case rated reverse blocking triode high voltage thyristor
This standard applies to reverse blocking triode thyristors with average on-state current of 200A, 500A, 1000A, off-state repetitive peak voltage and reverse repetitive peak voltage of 3200V or more (including 3200V) in tube case and cavity package. JB/T 5839-1991 KH series 200A or more tube case rated reverse blocking triode high voltage thyristors JB/T5839-1991 Standard download decompression password: www.bzxz.net
Some standard content:
Mechanical Industry Standard of the People's Republic of China KH Series 200A and Above Case Rated Reverse Blocking Triode High Voltage Thyristor Subject Content and Scope of Application JB539-91 This standard applies to case rated cavity package reverse blocking triode thyristors (hereinafter referred to as devices) with an average on-state current of 200A, 500A, 1000A, off-state repetitive peak voltage and reverse repetitive peak voltage of 3290V or above (including 3200V). 2 Referenced Standards GB.4024 Test Methods for Reverse Blocking Triode Thyristors of Semiconductor Devices GB-4937, Mechanical and Gas Test Methods for Discrete Semiconductor Devices GB4938 Acceptance and Reliability of Discrete Semiconductor Devices ZBK46003·Technical Requirements for Cases for Power Semiconductor Devices 3.1 Appearance According to ZBK46G03 The appearance is shown in Table 1. The appearance drawing is as per Figure 3 and Figure 4 of ZBK46003. Table 1 Part number KH1000 Limiting values (absolute maximum ratings) Limiting values are as shown in Table 2. Limit value Case temperature Storage temperature Equivalent junction temperature Reverse repetitive peak voltage Off-state repetitive peak voltage Model approved by the Ministry of Machinery and Electronics Industry on October 24, 1991 KT100a KT100c KT100d Value (maximum value) -40~75 -40~140 3200~6000) KH1000 Implemented on October 1, 1992 Limit value Reverse non-repetitive peak voltage||tt| |Off-state non-repetitive peak voltage On-state average current On-state (non-repetitive) surge current I' sine wave Critical rate of rise of on-state current Gate forward peak voltage Gate reverse peak voltage Gate forward peak current Gate peak power Gate average power Turn-off time Turn-on time Recovery voltage Resistance Note: 1) See Section 3.4 for the level classification Pe(4v) 2) (3200~4200) is expressed in (V) 3) See Section 3.6 for the level classification. 3.3 Electrical characteristics The electrical characteristics are shown in Table 3. Characteristics and conditions Te-25℃ On-state peak voltage Corresponding to the peak value of the maximum on-state average current IT(4W) Maximum voltage at current JB5839—91 Continued 2 Value (maximum value) (3200~4200)2) (4000~333)s) (4600~6000) is expressed by (V:), as follows. 3 KH1000 VDRM=VRSM+200V VRRM-VRSY+200V VpRM=VRs+300V VRRM=VRSM+300V 4:4x105 50~500) Digit (maximum value) KH1090 Characteristics and conditions Tes=25℃ Reverse repetitive peak current Maximum value of reverse peak current at rated voltage VRRM at junction temperature 25℃ and 125℃ New state repetitive peak current||tt ||The maximum value of the off-state peak current at the junction temperature of 25℃ and the rated voltage VDRM of 125℃ |holding current holding current gate trigger current gate trigger voltage gate non-trigger voltage critical rise rate of off-state voltage total power dissipation maximum total power dissipation as a function of the on-state average current and the conduction angle junction thermal resistance JB5889-91 continued 3 method: 1) The level division of the off-state voltage critical rise rate dv/dt is 10~250 the same below. Value (maximum value) 15~400 50~3000) 3.40 The level of the complex peak voltage VDRm of the state quantity, that is, the level of the complex reduction voltage VRn of the reverse quantity, shall be specified in Table 4. 4 The level of the critical rate of rise of the fault voltage shall be specified in the technical table. @v/at The level of the critical rate of rise of the state current shall be specified in Table 6. 43* Special curve (not for inspection) JB5839—91 The following curves should be given in the product manual: a, on-state volt-ampere characteristic curve; b, transient thermal resistance and time relationship curve; c, surge current and frequency relationship curve and I°t characteristic curve: 200 d, maximum on-state power consumption and on-state average current (conduction angle as parameter): e, gate trigger range characteristic curve; f, tube case temperature and forward average current derating relationship curve. Inspection rules Batch-by-batch (Group A) inspection All Group A inspections are non-destructive. Group A inspections are shown in Table 7. Table 7 External visual inspection Non-working Reverse repetition Peak current Off-state repetition Peak current Gate trigger Gate trigger GB4024 GB4024 GB4024 Condition Telse=25 (Unless otherwise specified) Normal lighting and normal vision Conclusion Temperature 25 and 125℃ Junction temperature 25℃Off-state voltage DC 12V Inspection requirements (maximum value) KH200KH500KH1000Unit Marking complete, clear, surface no damage, bond layer no falling off Polarity reversed Off-state voltage critical Rise rate Gate not triggered JB5839-91 Continued table? GB4084 Conditions T=25℃ (Unless otherwise specified)www.bzxz.net Junction temperature 125℃ Off-state peak voltage Apply 2/3 from zero Off-state quantity Repetitive peak voltage Junction temperature 126℃ Off-state voltage Off-state repetitive peak voltage Business requirements (maximum value) KH200E500KH1000Unit Note; 1) Junction temperature 125℃ is actually 125-℃, the same below. 2) If the first inspection of Group A fails, it can be strictly inspected according to Appendix A, and the inspection level is one level stricter. 4.2 Commercial period (Group B) test The test of Group B is shown in Table 8. Temperature change Final test: Degradation peak value Repetitive peak Value current New state repetitive peak Value current Electrical durability Post-test Repetitive peak ZBK46G03 GB4937 GB4938 Condition T25℃ (Except for other changes) Two boxes Method, -40℃, 140℃ cycle times, silver cycle high and low temperature each result oxygen 11 conversion time 3-4mins pressurized ammonia oil inspection method or other equivalent leak detection method source A2b according to A2b 16016h, 125℃ 50Hz positive liquid 705VRR2 and 70%VDRM final Aab inspection ticket request (the most Maximum value) KH200KH5ccE10CC Maximum size is in compliance with regulations Pa·Cm*/s nt)ct) Reverse repetitive peak Value current Off-state repetitive peak Value current Government approval certificate JB5839—91 Continued Table 8 Condition Teag6=25 ( Unless otherwise specified) According to Aab According to A2b Inspection requirements (maximum value) KH200KH500kH100 units nct Briefly give the attribute data of B5 and B8, the VTM, IRRM and IDRM values before and after the inspection, and the inspection conclusion Note: ① If the first inspection of Group B fails, it can be inspected again by additional sampling according to Appendix B, and the additional samples should be subjected to all tests of this group. Normally produced standardized products are subject to at least one batch of periodic inspections each year (Group B), and the same applies to Group C below. ② 1) n is the number of samples, C is the number of qualified judgments, and the following intervals. 4.3 Cyclic (Group C) Tests Tests marked with (D) are destructive. Group C tests are as shown in Table 3. 9 Holding current Holding current Reverse repetitive peak current Off-state repetitive peak current On-state (non-repetitive) Surge current On-state current threshold |Critical rate of rise Condition Tm=25℃ (Unless otherwise specified) GB4G24 Junction temperature 25℃ and 125℃ off-state voltage GB4024 GB4024, GB4024 Voltage: DC 12V Junction temperature 25℃ off-state voltage, DC 12V||t The supply temperature is 25℃ and 125℃, the gate electrode circuit is 135℃ before the surge, the bias voltage is 30% of the reverse box reset voltage, 1 wave modulation, the conduction angle is between 160~180℃. However, each test group can only track the test requirements (maximum value) KH200KH500KH10 00 unit All dimensions meet the requirements 10~25015~40020~500 Junction temperature before adding on-state current 125℃, new state voltage before opening VDM=2/sVDRM 50~500 [Final test: On-state peak current Reverse repetitive bee Value current Off-state repetitive peak Value current Junction-to-case thermal resistance Electrical durability Final test: On-state peak current Reverse repetitive peak Value current New state repetitive peak Value current High temperature storage Final test: On-state peak current Reverse repetitive peak value current decomposition repetitive peak Xuan electro-washing receiving batch certificate JB5839-91 Continued Table 9 Condition T. =25℃ (Unless otherwise specified) According to A2b According to A2b According to A2b GB4024||tt| |Thermistor current should be large enough to turn on the entire junction area 50Hz, 10008h junction temperature GB4938 125AC blocking is 70% VRRM and 70%VDRM According to A2b According to A2b According to A2b GR4937 1000h Tg=140C Connect A2b According to A2b According to A2b Inspection requirements (maximum value) KH200KH500KH1000Unit c Briefly give the attribute data of c8 and C9, VTM, IRRr and IpR before and after inspection, inspection conclusion method; C group inspection failed the first delivery, same as B group Note ①. . 4 Identification (D group) test IVD=initial value of each device. D group test is shown in Table 10. V Thermal cycle load Final test On-state peak Reverse repetitive Peak current New-state repetitive Peak current Constant acceleration Final test: On-state peak Reverse repetitive peak Value current Off-state repetitive peak Value current 5 Marking and ordering information 5.1 Marking on the device Device model and quality category; JB5839--91 GB4024 GB4937, Condition T. =25℃ (unless otherwise specified) cycle 5000 timesHighest temperature 125℃Minimum temperature40℃ According to A2b According to A2b According to A2b Inspection requirements (maximum value) KH200KH500KH1000Unit nc Acceleration of 1min in two directions of each axis of three main axes According to A2b According to A2b According to A2b (the arrow points to the negative board span), or use red, blue (or black), yellow (or self) respectively b terminal identification mark is represented by one meter, represents the negative, positive and gate terminals, or only red is used to represent the cathode terminal; c, manufacturer's name, code or trademark; d. Inspection batch identification code. 5.2 Marking of packaging box (box) Model and quality category; Manufacturer name, code or trademark; Inspection batch identification code; d. Moisture-proof and rain-proof mark, This standard number. Ordering information To order a device, at least the following information is required: a. Accurate model, This standard number, Quality assessment Class I, Others. JB583991 JB5839—91 Appendix A AQL sampling table (Supplement) AQL sampling table see Table A1 Sample size Batch range The arrow indicates that the first sampling plan should be used. If the sample size at the corresponding point pointed by the arrow is equal to or greater than the batch, the batch should be sampled 2 AQL () Appendix B Additional sampling table (Supplement) ②C: qualified judgment number, T: unqualified judgment number; 1 Note: ①.This table belongs to the inspection level (L) Additional sampling table see Table B1 100% inspection. 91-150 151-230 281-500 501-1200 Sample quantity Initial sampling Qualified judgment number Additional sampling This standard is proposed and managed by Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. This standard is drafted by Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. 16 The main drafter of this standard is Shi Jianxin. Additional number Additional instructions: Tip: This standard content only shows part of the intercepted content of the complete standard. 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