title>JB/T 5839-1991 KH series 200A and above case rated reverse blocking triode high voltage thyristor - JB/T 5839-1991 - Chinese standardNet - bzxz.net
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JB/T 5839-1991 KH series 200A and above case rated reverse blocking triode high voltage thyristor

Basic Information

Standard ID: JB/T 5839-1991

Standard Name: KH series 200A and above case rated reverse blocking triode high voltage thyristor

Chinese Name: KH系列200A以上管壳额定反向阻断三极高压晶闸管

Standard category:Machinery Industry Standard (JB)

state:in force

Date of Release1991-10-24

Date of Implementation:1992-10-01

standard classification number

Standard Classification Number:Electrical Engineering>>Power Transmission and Transformation Equipment>>K46 Power Semiconductor Devices and Components

associated standards

Publication information

other information

Focal point unit:Xi'an Power Electronics Technology Research Institute

Publishing department:Xi'an Power Electronics Technology Research Institute

Introduction to standards:

This standard applies to reverse blocking triode thyristors with average on-state current of 200A, 500A, 1000A, off-state repetitive peak voltage and reverse repetitive peak voltage of 3200V or more (including 3200V) in tube case and cavity package. JB/T 5839-1991 KH series 200A or more tube case rated reverse blocking triode high voltage thyristors JB/T5839-1991 Standard download decompression password: www.bzxz.net

Some standard content:

Mechanical Industry Standard of the People's Republic of China
KH Series 200A and Above Case Rated Reverse Blocking Triode High Voltage Thyristor Subject Content and Scope of Application
JB539-91
This standard applies to case rated cavity package reverse blocking triode thyristors (hereinafter referred to as devices) with an average on-state current of 200A, 500A, 1000A, off-state repetitive peak voltage and reverse repetitive peak voltage of 3290V or above (including 3200V). 2
Referenced Standards
GB.4024 Test Methods for Reverse Blocking Triode Thyristors of Semiconductor Devices GB-4937, Mechanical and Gas Test Methods for Discrete Semiconductor Devices GB4938 Acceptance and Reliability of Discrete Semiconductor Devices ZBK46003·Technical Requirements for Cases for Power Semiconductor Devices
3.1 Appearance
According to ZBK46G03
The appearance is shown in Table 1. The appearance drawing is as per Figure 3 and Figure 4 of ZBK46003. Table 1
Part number
KH1000
Limiting values ​​(absolute maximum ratings)
Limiting values ​​are as shown in Table 2.
Limit value
Case temperature
Storage temperature
Equivalent junction temperature
Reverse repetitive peak voltage
Off-state repetitive peak voltage
Model approved by the Ministry of Machinery and Electronics Industry on October 24, 1991
KT100a
KT100c
KT100d
Value (maximum value)
-40~75
-40~140
3200~6000)
KH1000
Implemented on October 1, 1992
Limit value
Reverse non-repetitive peak voltage||tt| |Off-state non-repetitive peak voltage
On-state average current
On-state (non-repetitive) surge current
I' sine wave
Critical rate of rise of on-state current
Gate forward peak voltage
Gate reverse peak voltage
Gate forward peak current
Gate peak power
Gate average power
Turn-off time
Turn-on time
Recovery voltage
Resistance
Note: 1) See Section 3.4 for the level classification
Pe(4v)
2) (3200~4200) is expressed in (V)
3) See Section 3.6 for the level classification.
3.3 Electrical characteristics
The electrical characteristics are shown in Table 3.
Characteristics and conditions
Te-25℃
On-state peak voltage
Corresponding to the peak value of the maximum on-state
average current IT(4W)
Maximum voltage at current
JB5839—91
Continued 2
Value (maximum value)
(3200~4200)2)
(4000~333)s)
(4600~6000) is expressed by (V:), as follows. 3
KH1000
VDRM=VRSM+200V
VRRM-VRSY+200V
VpRM=VRs+300V
VRRM=VRSM+300V
4:4x105
50~500)
Digit (maximum value)
KH1090
Characteristics and conditions
Tes=25℃
Reverse repetitive peak current
Maximum value of reverse
peak current at rated voltage VRRM at junction temperature 25℃ and 125℃
New state repetitive peak current||tt ||The maximum value of the off-state peak current at the junction temperature of 25℃ and the rated voltage VDRM of 125℃
|holding current
holding current
gate trigger current
gate trigger voltage
gate non-trigger voltage
critical rise rate of off-state voltage
total power dissipation
maximum total power dissipation as a function of the on-state average current and the conduction angle
junction thermal resistance
JB5889-91
continued 3
method: 1) The level division of the off-state voltage critical rise rate dv/dt is 10~250
the same below.
Value (maximum value)
15~400
50~3000)
3.40 The level of the complex peak voltage VDRm of the state quantity, that is, the level of the complex reduction voltage VRn of the reverse quantity, shall be specified in Table 4. 4
The level of the critical rate of rise of the fault voltage shall be specified in the technical table. @v/at
The level of the critical rate of rise of the state current shall be specified in Table 6. 43*
Special curve (not for inspection)
JB5839—91
The following curves should be given in the product manual: a, on-state volt-ampere characteristic curve;
b, transient thermal resistance and time relationship curve;
c, surge current and frequency relationship curve and I°t characteristic curve: 200
d, maximum on-state power consumption and on-state average current (conduction angle as parameter): e, gate trigger range characteristic curve;
f, tube case temperature and forward average current derating relationship curve. Inspection rules
Batch-by-batch (Group A) inspection
All Group A inspections are non-destructive. Group A inspections are shown in Table 7. Table 7
External visual inspection
Non-working
Reverse repetition
Peak current
Off-state repetition
Peak current
Gate trigger
Gate trigger
GB4024
GB4024
GB4024
Condition Telse=25
(Unless otherwise specified)
Normal lighting and normal vision
Conclusion Temperature 25 and 125℃
Junction temperature 25℃Off-state voltage
DC 12V
Inspection requirements (maximum value)
KH200KH500KH1000Unit
Marking complete, clear, surface
no damage, bond layer no falling off
Polarity reversed
Off-state voltage critical
Rise rate
Gate not triggered
JB5839-91
Continued table?
GB4084
Conditions T=25℃
(Unless otherwise specified)www.bzxz.net
Junction temperature 125℃ Off-state peak voltage
Apply 2/3 from zero
Off-state quantity Repetitive peak voltage
Junction temperature 126℃ Off-state voltage
Off-state repetitive peak voltage
Business requirements (maximum value)
KH200E500KH1000Unit
Note; 1) Junction temperature 125℃ is actually 125-℃, the same below. 2) If the first inspection of Group A fails, it can be strictly inspected according to Appendix A, and the inspection level is one level stricter. 4.2 Commercial period (Group B) test
The test of Group B is shown in Table 8.
Temperature change
Final test:
Degradation peak value
Repetitive peak
Value current
New state repetitive peak
Value current
Electrical durability
Post-test
Repetitive peak
ZBK46G03
GB4937
GB4938
Condition T25℃
(Except for other changes)
Two boxes Method, -40℃, 140℃
cycle times, silver cycle high and low temperature
each result oxygen 11 conversion time
3-4mins
pressurized ammonia oil inspection method or other
equivalent leak detection method
source A2b
according to A2b
16016h, 125℃
50Hz positive liquid
705VRR2 and 70%VDRM
final Aab
inspection ticket request (the most Maximum value)
KH200KH5ccE10CC
Maximum size is in compliance with regulations
Pa·Cm*/s
nt)ct)
Reverse repetitive peak
Value current
Off-state repetitive peak
Value current
Government approval certificate
JB5839—91
Continued Table 8
Condition Teag6=25
( Unless otherwise specified)
According to Aab
According to A2b
Inspection requirements (maximum value)
KH200KH500kH100 units nct
Briefly give the attribute data of B5 and B8, the VTM, IRRM and IDRM values ​​before and after the inspection, and the inspection conclusion Note: ① If the first inspection of Group B fails, it can be inspected again by additional sampling according to Appendix B, and the additional samples should be subjected to all tests of this group. Normally produced standardized products are subject to at least one batch of periodic inspections each year (Group B), and the same applies to Group C below. ②
1) n is the number of samples, C is the number of qualified judgments, and the following intervals. 4.3 Cyclic (Group C) Tests Tests marked with (D) are destructive. Group C tests are as shown in Table 3. 9 Holding current Holding current Reverse repetitive peak current Off-state repetitive peak current On-state (non-repetitive) Surge current On-state current threshold |Critical rate of rise
Condition Tm=25℃
(Unless otherwise specified)
GB4G24
Junction temperature 25℃ and 125℃ off-state voltage
GB4024
GB4024,
GB4024
Voltage: DC 12V
Junction temperature 25℃ off-state voltage,
DC 12V||t The supply temperature is 25℃ and 125℃, the gate electrode circuit is 135℃ before the surge, the bias voltage is 30% of the reverse box reset voltage, 1 wave modulation, the conduction angle is between 160~180℃. However, each test group can only track the test requirements (maximum value) KH200KH500KH10 00 unit
All dimensions meet the requirements
10~25015~40020~500
Junction temperature before adding on-state current
125℃, new state voltage before opening
VDM=2/sVDRM
50~500
[Final test:
On-state peak current
Reverse repetitive bee
Value current
Off-state repetitive peak
Value current
Junction-to-case thermal resistance
Electrical durability
Final test:
On-state peak current
Reverse repetitive peak
Value current
New state repetitive peak
Value current
High temperature storage
Final test:
On-state peak current
Reverse repetitive peak
value current
decomposition repetitive peak
Xuan electro-washing
receiving batch certificate
JB5839-91
Continued Table 9
Condition T. =25℃
(Unless otherwise specified)
According to A2b
According to A2b
According to A2b
GB4024||tt| |Thermistor current should be large enough to
turn on the entire junction area
50Hz, 10008h junction temperature
GB4938
125AC blocking is 70%
VRRM and 70%VDRM
According to A2b
According to A2b
According to A2b
GR4937
1000h Tg=140C
Connect A2b
According to A2b
According to A2b
Inspection requirements (maximum value)
KH200KH500KH1000Unit c
Briefly give the attribute data of c8 and C9, VTM, IRRr and IpR before and after inspection, inspection conclusion method; C group inspection failed the first delivery, same as B group Note ①. . 4 Identification (D group) test
IVD=initial value of each device. D group test is shown in Table 10. V
Thermal cycle load
Final test
On-state peak
Reverse repetitive
Peak current
New-state repetitive
Peak current
Constant acceleration
Final test:
On-state peak
Reverse repetitive peak
Value current
Off-state repetitive peak
Value current
5 Marking and ordering information
5.1 Marking on the device
Device model and quality category;
JB5839--91
GB4024
GB4937,
Condition T. =25℃
(unless otherwise specified)
cycle 5000 timesHighest temperature
125℃Minimum temperature40℃
According to A2b
According to A2b
According to A2b
Inspection requirements (maximum value)
KH200KH500KH1000Unit nc
Acceleration of 1min in two
directions of each axis of three main axes
According to A2b
According to A2b
According to A2b
(the arrow points to the negative board span), or use red, blue (or black), yellow (or self) respectively b terminal identification mark is represented by one meter,
represents the negative, positive and gate terminals, or only red is used to represent the cathode terminal; c, manufacturer's name, code or trademark;
d. Inspection batch identification code.
5.2 Marking of packaging box (box)
Model and quality category;
Manufacturer name, code or trademark;
Inspection batch identification code;
d. Moisture-proof and rain-proof mark,
This standard number.
Ordering information
To order a device, at least the following information is required: a. Accurate model,
This standard number,
Quality assessment Class I,
Others.
JB583991
JB5839—91
Appendix A
AQL sampling table
(Supplement)
AQL sampling table see Table A1
Sample size
Batch range
The arrow indicates that the first sampling plan should be used. If the sample size at the corresponding point pointed by the arrow is equal to or greater than the batch, the batch should be sampled 2
AQL ()
Appendix B
Additional sampling table
(Supplement)
②C: qualified judgment number, T: unqualified judgment number; 1
Note: ①.This table belongs to the inspection level (L)
Additional sampling table see Table B1
100% inspection.
91-150
151-230
281-500
501-1200
Sample quantity
Initial sampling
Qualified judgment number
Additional sampling
This standard is proposed and managed by Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. This standard is drafted by Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. 16
The main drafter of this standard is Shi Jianxin.
Additional number
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