This specification specifies the detailed requirements for 3CGl10B and 3CGl1oc PNP silicon power transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices". SJ 20014-1992 Semiconductor Discrete Devices GP, GT and GCT Level 3CG110 PNP Silicon Low Power Transistor Detailed Specification SJ20014-1992 Standard download decompression password: www.bzxz.net
This specification specifies the detailed requirements for 3CGl10B and 3CGl1oc PNP silicon power transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Semiconductor Discrete Devices".

Military standard for the electronics industry of the People's Republic of China FL5961
SJ20014-92
Semiconductor discrete device
GP, GT and GCT grades
3CG110, 3DG130, 3DG182 types
Semiconductor discrete deviceDetail specification for silicon low--power transistorfortypes3CG110.3DG130.3DG182GP,GT and types GCT classes
Issued on February 1, 1992
China Electronics Industry Corporation
Implemented on May 1, 1992
1 Scope
Military standard for electronics industry of the People's Republic of ChinaSemiconductor discrete devices
GP, GT and GCT classes
3CG110 type PNP silicon low-power transistor
Detailed specification
Semiconductor discrete deviceDetailspecificationforPNPsiliconlow-powertransistor for type 3CG110
GP,GT and GCT classes
1.1 Subject content
SJ20014—92
This specification specifies the detailed requirements for 3CG110B and 3CG110C type PNP silicon low-power transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33-85 "General Specification for Discrete Semiconductor Devices".
China Electronics Industry Corporation Published on February 1, 1992, implemented on May 1, 1992
1.2 Dimensions
SJ20014-92
The dimensions should comply with A3-01B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1
Figure 1 Dimensions
1.3 Maximum Ratings
Ta=25℃
3CG110B
3CG110C
Note: 1) When Ta>25℃, the rating shall be linearly derated at a rate of 1.71mW/℃. 2
Terminal polarity:
1.Emitter
3.Collector
Unit: mm
A3-01B
T and Tsig
-65～200
-65~200
1.4Main electrical characteristics (TA=25℃)
Symbol (unit)
VBE(at)
VcEsat)||tt ||Reference documents
GB4587--84
GB7581—87
GJB33-—85
GJB128--86
3 Requirements
3.1 Detailed requirements
Test conditions
VcE-10V
Vce--10V
Ic=10mA
Vce—-5V
Ic -50mA
(Pulse method）
VcE=-10V
Ic-10mA
f-30MHz
Vcn=-5V
f-1MHz
Ic-30mA
In=3mA
Ic-30mA
Ig—3mA
SJ20014-92
3CG110|| tt||3CG110
3CGi10
3CG110
3CG110
3CG110
3CG110
Test Methods for Bipolar Transistors
Dimensions of Discrete Semiconductor Devices
General Specification for Discrete Semiconductor Devices
Test Methods for Discrete Semiconductor Devices
All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design Structure and Dimensions
Limit Value
Minimum Value
The design, structure and dimensions of the device shall be in accordance with the provisions of GJB33 and this specification. 3.2.1 Terminal Material and Coating
Maximum Value
SJ20014-92
The terminal material shall be Kovar. Lead coating shall be gold-plated or tin-plated. When the coating is selected, it shall be clearly specified in the contract or order (see 6).
3.3 Marking
The marking of the device shall be in accordance with the provisions of GJB33.
4 Quality Assurance Provisions
4.1 Sampling and Inspection
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification Inspection
Qualification Inspection shall be in accordance with the provisions of GJB33.
4.3 Screening (GT and GCT grades only)
Screening shall be in accordance with Table 2 of GJB33 and this specification. The following tests shall be performed in accordance with Table 1 of this specification. Devices exceeding the specified limit values ​​shall not be accepted.
(GJB33 Table 2)
7. Intermediate test
8. Power aging
9. Final test
4.3.1 Power aging conditions
Power aging conditions are as follows;
IcBOr and hFE2
Test or experiment
GT and GCT grades
Grouped as A2 in Table 1 of this specification;
AIcso1=100% of the initial value or 5nA, whichever is greater; AhpEa=±15% of the initial value
T=25℃±3C, Vc=-20V, P300mW Note: It is not allowed to add a heat sink or forced air cooling to the device. 4.4 Quality consistency inspection
Quality consistency inspection shall be carried out in accordance with the provisions of GJB33. 4.4.1 Group A test
Group A test shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B test
Group B test shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and the change amount (A) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.4.3 Group C test
Group C test shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.5 Test method
The test method shall be in accordance with the corresponding table of this specification and the following provisions. 4.5.1 Pulse test
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The pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB128. Table 1A Group inspection
Inspection or test
Group A1
External visual inspection
Group A2
Collector-base breakdown voltage
3CG110B
3CG110C
Collector-emitter breakdown voltage
3CG110B
3CG110C
Emitter-base breakdown voltage
Collector-base cut-off current
3CG110B
3CG110C
Collector Emitter-Base Cut-off Current
3CG110B
3CG110C
Emitter-Base Cut-off Current
Forward Current Transfer Ratio
Forward Current Transfer Ratio
GJB128
GB4587
2.9.2.1 Emitter-Base Open Circuit
Ic=10μA
This Specification
Appendix A
Emitter-Base Open Circuit
Ic=10mA
Pulse Method (See 4.5.1)
Collector-base open
Ig-10μA
Emitter-base open
VcB-—40V
VcB=-50V
Emitter-base open
VcE--30V
Vce--45V
Collector-base open
VB=-4V
VcE= -10V
Vce--10V
Ic=10mA
LTPD symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Limit value
Minimum value Maximum value
Inspection or test
Forward current transfer ratio
Base-emitter saturation voltage drop||tt| |Collector-emitter saturation
A3 group
High-excitation operation
Collector-base cutoff current
3CG110B
3CG110C
Low-temperature operation:
Forward current transfer ratio
A4 group
Characteristic frequency
Open-circuit output capacitance
A5, A6 and A7 groups||tt| |Not applicable
SJ20014—-92
Continued Table 1 Group A Test
GB4587
VcE=-5V
lc=50mA
Pulse method (see 4.5.1)
Ic=30mA
In=3mA
Pulse method (see 4.5.1)
Ic-30mA
Ig=3mA
Pulse method (see 4.5.1)
TA=150℃
Emitter-base open circuit
Vcn=-30V
Vcn=-40V
TA--55℃
Vc=-10V
Ic=10mA
Vce--10V
Ic=10mA||tt| |f30MHz
Vcn=-10V
f=1MHz
LTPD symbol
VBE(at)
VcE(mt)
Extreme limit value
Minimum maximum value
Inspection or test
B1 group
Solderability
Marking durability
B2 group
Thermal shock (temperature cycle)
a. Detailed leak inspection
b. Rough hysteresis inspection
Final test:
B3 group
Steady-state working life
Final test:
B4 group
Visual inspection inside the cap
(Design verification)
Bond strength
B5 group
Not applicable
B6 group| |tt||High temperature life
(non-working state)
Final test:
SJ20014-92
Table 2 Group B test
GJB128
See Table 4, steps 1 and 3
T=25℃±3℃
Ptot=300mW
Vcn=—20V
See Table 4, steps 2, 4 and 5.
Test condition A
TA=200℃
See Table 4, steps 2, 4 and 5.
One device per batch, 0 failure
20(C0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Coarse leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test Test:
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ20014—92
Table 3C group test
GJB128
See Figure 1
Test condition E
See Table 4, steps 1 and 3
See Table 4, steps 1 and 3
T=25℃±3℃
Ptot300mW
Vcn 20V
See Table 4. Steps 2, 4 and 5
Inspection or test
Collector-base cut-off current
3CG110B
3CG110C
Collector-base cut-off current
3CG110B
3CG110C
Forward current transfer ratio
3CG110B
3CG110C
Forward current transfer ratio
5Emitter-emitter saturation voltage drop
SJ20014-92||tt ||Table 4 Joint test of Group B and Group C
GB4587
Emitter-base open circuit
Vc--40V
Vcn——50V
Emitter-base open circuit
VcB=—30V
VcB—40V
Vce--10V
Ic=10mA
Vcg--10V
le=10mA
Ic30mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
Notes
The required coating shall be specified in the contract or order (see 3.2.1). Symbol
AVcEcat)
If required by the user, the typical characteristic curve can be specified in the contract or order. Pole
Minimum value
Maximum value
±25% of initial value
SJ20014-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1
Voltage source
Figure A1 Collector-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter applies the specified bias conditions and increases the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BR)CEo, the transistor is qualified.
Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Jinan Semiconductor Institute. The main drafters of this specification are: Wang Changfu, Jia Huirong, Zhong Taifu. Project code: B91021.1)
TA=150℃
Emitter-base open
Vcn=-30V
Vcn=-40V
TA--55℃
Vc=-10V
Ic=10mA
Vce--10V
Ic=10mA
f30MHz
Vcn =-10V
f=1MHz
LTPD symbol
VBE(at)
VcE(mt)
Extreme Limits
Minimum Maximum Value
Inspection or Test
B1 Group
Solderability
Marking Durability
B2 Group
Thermal Shock (Temperature Cycle)| |tt||a. Detailed leak check
b. Rough hysteresis check
Final test:
B3 group
Steady-state working life
Final test:
B4 group
Visual inspection inside the cap
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(non-working state)
Final test:
SJ20014-92
Table 2 Group B test
GJB128
See Table 4, steps 1 and 3
T=25℃±3℃
Ptot=300mW
Vcn=—20V
See Table 4, steps 2, 4 and 5.
Test condition A
TA=200℃
See Table 4, steps 2, 4 and 5.
One device per batch, 0 failure
20(C0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Coarse leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test Test:
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ20014—92
Table 3C group test
GJB128
See Figure 1
Test condition E
See Table 4, steps 1 and 3
See Table 4, steps 1 and 3
T=25℃±3℃
Ptot300mW
Vcn 20V
See Table 4. Steps 2, 4 and 5
Inspection or test
Collector-base cut-off current
3CG110B
3CG110C
Collector-base cut-off current
3CG110B
3CG110C
Forward current transfer ratio
3CG110B
3CG110C
Forward current transfer ratio
5Emitter-emitter saturation voltage drop
SJ20014-92||tt ||Table 4 Joint test of Group B and Group C
GB4587
Emitter-base open circuit
Vc--40V
Vcn——50V
Emitter-base open circuit
VcB=—30V
VcB—40V
Vce--10V
Ic=10mA
Vcg--10V
le=10mA
Ic30mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
Notes
The required coating shall be specified in the contract or order (see 3.2.1). Symbol
AVcEcat)
If required by the user, the typical characteristic curve can be specified in the contract or order. Pole
Minimum value
Maximum value
±25% of initial value
SJ20014-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1
Voltage source
Figure A1 Collector-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter applies the specified bias conditions and increases the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BR)CEo, the transistor is qualified.
Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Jinan Semiconductor Institute. The main drafters of this specification are: Wang Changfu, Jia Huirong, Zhong Taifu. Project code: B91021.1)
TA=150℃
Emitter-base open
Vcn=-30V
Vcn=-40V
TA--55℃
Vc=-10V
Ic=10mA
Vce--10V
Ic=10mA
f30MHz
Vcn =-10V
f=1MHz
LTPD symbol
VBE(at)
VcE(mt)
Extreme Limits
Minimum Maximum Value
Inspection or Test
B1 Group
Solderability
Marking Durability
B2 Group
Thermal Shock (Temperature Cycle)| |tt||a. Detailed leak check
b. Rough hysteresis check
Final test:
B3 group
Steady-state working life
Final test:
B4 group
Visual inspection inside the cap
(Design verification)
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(non-working state)
Final test:
SJ20014-92
Table 2 Group B test
GJB128
See Table 4, steps 1 and 3
T=25℃±3℃
Ptot=300mW
Vcn=—20V
See Table 4, steps 2, 4 and 5.
Test condition A
TA=200℃
See Table 4, steps 2, 4 and 5.
One device per batch, 0 failure
20(C0)
Inspection or test
C1 group
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Coarse leak detection
Comprehensive temperature/humidity
Cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test Test:
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ20014—92
Table 3C group test
GJB128
See Figure 1
Test condition E
See Table 4, steps 1 and 3
See Table 4, steps 1 and 3
T=25℃±3℃
Ptot300mW
Vcn 20V
See Table 4. Steps 2, 4 and 5
Inspection or test
Collector-base cut-off current
3CG110BWww.bzxZ.net
3CG110C
Collector-base cut-off current
3CG110B
3CG110C
Forward current transfer ratio
3CG110B
3CG110C
Forward current transfer ratio
5Emitter-emitter saturation voltage drop
SJ20014-92||tt ||Table 4 Joint test of Group B and Group C
GB4587
Emitter-base open circuit
Vc--40V
Vcn——50V
Emitter-base open circuit
VcB=—30V
VcB—40V
Vce--10V
Ic=10mA
Vcg--10V
le=10mA
Ic30mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
Notes
The required coating shall be specified in the contract or order (see 3.2.1). Symbol
AVcEcat)
If required by the user, the typical characteristic curve can be specified in the contract or order. Pole
Minimum value
Maximum value
±25% of initial value
SJ20014-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1
Voltage source
Figure A1 Collector-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter applies the specified bias conditions and increases the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BR)CEo, the transistor is qualified.
Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Jinan Semiconductor Institute. The main drafters of this specification are: Wang Changfu, Jia Huirong, Zhong Taifu. Project code: B91021.Rough leak detection
Comprehensive temperature/humidity
Cyclic test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ2 0014—92
Table 3 Group C test
GJB128
See Figure 1
Test condition E
See Table 4, steps 1 and 3
See Table 4, steps 1 and 3
T=25℃±3℃
Ptot300mW
Vcn20V
See Table 4.Steps 2, 4 and 5
Test or test
Collector-base cut-off current
3CG1 10B
3CG110C
Collector-base cutoff current
3CG110B
3CG110C
Forward current transfer ratio
3CG110B
3CG110C
Forward current transfer ratio
5Emitter-emitter saturation voltage drop
SJ20014-92
Table 4 Joint test of group B and group C
GB4587|| tt||Emitter-base open circuit
Vc--40V
Vcn——50V
Emitter-base open circuit
VcB=—30V
VcB—40V
Vce--10V
Ic=10mA
Vcg--10V
le=10mA
Ic30mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
Notes
The required coating shall be specified in the contract or order (see 3.2.1). Symbol
AVcEcat)
If required by the user, the typical characteristic curve can be specified in the contract or order. Pole
Minimum value
Maximum value
±25% of initial value
SJ20014-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1
Voltage source
Figure A1 Collector-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter applies the specified bias conditions and increases the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BR)CEo, the transistor is qualified.
Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Jinan Semiconductor Institute. The main drafters of this specification are: Wang Changfu, Jia Huirong, Zhong Taifu. Project code: B91021.Rough leak detection
Comprehensive temperature/humidity
Cyclic test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test:
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ2 0014—92
Table 3 Group C test
GJB128
See Figure 1
Test condition E
See Table 4, steps 1 and 3
See Table 4, steps 1 and 3
T=25℃±3℃
Ptot300mW
Vcn20V
See Table 4.Steps 2, 4 and 5
Test or test
Collector-base cut-off current
3CG1 10B
3CG110C
Collector-base cutoff current
3CG110B
3CG110C
Forward current transfer ratio
3CG110B
3CG110C
Forward current transfer ratio
5Emitter-emitter saturation voltage drop
SJ20014-92
Table 4 Joint test of group B and group C
GB4587|| tt||Emitter-base open circuit
Vc--40V
Vcn——50V
Emitter-base open circuit
VcB=—30V
VcB—40V
Vce--10V
Ic=10mA
Vcg--10V
le=10mA
Ic30mA
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
Notes
The required coating shall be specified in the contract or order (see 3.2.1). Symbol
AVcEcat)
If required by the user, the typical characteristic curve can be specified in the contract or order. Pole
Minimum value
Maximum value
±25% of initial value
SJ20014-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1
Voltage source
Figure A1 Collector-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter applies the specified bias conditions and increases the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit value of V(BR)CEo, the transistor is qualified.
Additional Notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Jinan Semiconductor Institute. The main drafters of this specification are: Wang Changfu, Jia Huirong, Zhong Taifu. Project code: B91021.
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