This specification specifies the detailed requirements for 3DK105 NPN silicon low-power switching transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices". SJ 20058-1992 Semiconductor Discrete Devices 3DK105 NPN Silicon Low-Power Switching Transistor Detailed Specification SJ20058-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3DK105 NPN silicon low-power switching transistors (hereinafter referred to as devices). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices".

GB 4787-1984 Test methods for bipolar transistors
GB 7581-1987 Dimensions of discrete semiconductor devices
GJB 33-1985 General specification for discrete semiconductor devices
GJB 128-1986 Test methods for discrete semiconductor devices

1 Scope
People's Republic of China Electronic Industry Military Standard Semiconductor discrete device
3DK105 type NPN silicon low power switching transistor Detail specification For silicon NPN low power switching transistor of type 3DK105 1.1 Subject content
SJ20058-92
This specification specifies the detailed requirements for 3DK105 type NPN silicon low power switching transistor (hereinafter referred to as device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices".
China Electronics Industry Corporation Issued on November 19, 1992, implemented on May 1, 1993
1.2 Dimensions
SJ20058-92
Dimensions should conform to A3-02B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1
Terminal polarity:
1. Emitter
3. Collector Pole
Medium 40.30?x?
Figure 1 Dimensions
A3-02B
1.3 Maximum Ratings
3DK105A
3DK105B
TA=25℃
Te-25℃
SJ20058—92bzxz.net
Note: 1) When T>25℃, derate linearly at a rate of 4.0mW/℃. 2) When Tc>25℃, derate linearly at a rate of 15mW/℃. 1.4 Main electrical characteristics (T^25℃)
3DK105A
3DK105B
3DK105A
3DK105B
3DK105A
3DK105B
Note: 1)
le=ImA
Minimum value
Maximum value
Veg-10V
Ie-50mA
f-30MHz
Minimum value
Maximum value
Ie300mA
In=30mA
Minimum value
Maximum value
Pulse method (see 4.5.1).
Referenced Documents
GB4587--84
GB7581-87
GJB3385
hg(Veg=1V)
le10mA
Minimum Value
Maximum Value
f=1MHz
Vec=-10V
Minimum Value
Maximum Value||t t||Vceiama
le50GmA
Ig=50mA
Minimum value
Bipolar tube test method
Maximum value
Dimensions of discrete semiconductor devices
General specification of discrete semiconductor devices
le=300mA
Minimum value
Maximum value
lc=500m A
Ig=50mA
Minimum value
Maximum value
le=300mA
l=30mA
Minimum value
Maximum value
—65~+200
lc=500mA
Minimum value
Maximum value
lc=500mA
Im-=5 0mA
Minimum value
Maximum value
le=500mA
Minimum value
Maximum value
GJB128-86
3 Requirements
3.1 Detailed requirements
SJ20058—92
Test methods for discrete semiconductor devices
All requirements shall comply with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions
The design, structure and dimensions of the device shall comply with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating
The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or immersion tin. The selection of terminal material and coating requirements or other requirements shall be clearly specified in the contract or order (see Chapter 6). 3.3 Marking
The marking of the device shall be in accordance with the provisions of GJB33.
4 Quality Assurance Provisions
4.1 Sampling and Inspection
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification Inspection
Qualification Inspection shall be in accordance with the provisions of GJB33.
4.3 Screening (GT and GCT grades only)
Screening shall be in accordance with Table 2 of GJB33 and this specification. The following tests shall be carried out in accordance with Table 1 of this specification, and devices exceeding the specified limit values ​​shall not be accepted.
(See Table 2 of GJB33)
7. Intermediate parameter test
8. Power aging
Final test
4.3.1 Power aging conditions
T=25±3℃
Vc=20V(3DK105A)
VcB=30V(3DK105B)
Ptot=700mW
Note: It is not allowed to add a heat sink or forced air cooling to the device. 4.4 Quality consistency inspection
les and hyey
See 4.3.1
Test or experiment
Grouped according to A2 in Table 1 of this specification;
A/cu=100% of the initial value or 30nA, whichever is greater A/=±20% of the initial value
Quality consistency inspection should be carried out in accordance with the provisions of GJB33. 4
4.4.1 Group A inspection
SJ20058-92
Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B inspection
Group B inspection shall be carried out in accordance with the provisions of CJB33 and Table 2 of this specification. The final test and the change amount (△) requirements shall be carried out in accordance with the steps of Table 4 of this specification.
4.4.3 Group C inspection
Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The post-defect test and the change amount (A) requirements shall be carried out in accordance with the steps of Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions: 4.5.1 Pulse test
The pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB128. Table 1 Group A Inspection
Inspection or Test
Group A1
Appearance and Mechanical Inspection
Group A2
Collector-Base Breakdown Voltage
3DK105A
3DK105B
Emitter-Base Breakdown Voltage
Emitter-Emitter Breakdown Voltage
3DK105A
3DK 105B
Collector-emitter breakdown voltage
3DK105A
3DK105B
Collector-base cutoff current
3DK105A
3DK105B
Emitter-base cutoff current
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio||t t||Forward current transfer ratio
GJB128
This specification
Appendix A
This specification
Appendix A
GB4587
Emitter-base open circuit
Te10pA
Collector-base open circuit
Ig-10μA
Emitter-base open circuit
le= 100A
Emitter-base open circuit
Pulse method (see 4.5.1)
Emitter-base open circuit
VeH=30V
Collector-base open circuit
Ve-[V,le=ImA
Vez-1V.l.=10mA
Vey-1Vle300mA
Ve-1V.l:500mA
Venncho
VRCHON
Limit value
Minimum maximum value
Inspection or test
Collector-emitter saturation voltage drop
Collector-emitter saturation voltage drop
Base-emitter saturation voltage drop
Base-emitter voltage drop
A3 group
High temperature operation:
Collector-base cut-off current
3DK105A
3DK105B
Low temperature operation:
Forward current transfer ratio
A4 group
Characteristic frequency
Open circuit output capacitance||tt ||Saturation on time
Saturation off time
Grouping of A5, A6 and A7
Not applicable
SJ20058-—92
Continued Table 1
GB4587
le300mA
le=500mAl=50mA
Pulse method (see 4.5.1)
lc=300mAIg=30mA
le=500mA
Ig=50mA
Pulse method (see 4.5.1)
Ta=+150℃
Emitter section - base open circuit
Vea=30V
Ven-5 0V
Ta=-55C
Ver=-1V.le=10mA
Vug-10V.=50mA
f=30MHz
Vcx=10V,1g=0
f-1MHz
lc-500mA.1=50mA
le-50UmA./=/=50mA
LTPI Symbol
VnECani
VHECnt
Limit Value
Minimum
Maximum
Inspection or Test
B1 Group
Solderability
Durability of Marking||tt ||B2 Group
Thermal shock (temperature cycle)
a. Detailed leak detection
b. Rough leak detection
Final test:
B3 Group
Steady-state working life
Final test:
B4 Group
Internal visual inspection
(Design verification)
Bond strength
B5 Group
Not applicable
B6 Group
High temperature life
(Not working)
Final test:
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Table 2 Group B inspection
GJB128
See Table 4, steps 1.3 and 4|| tt||Vea=20VPu=700nW
Ta=25±3℃
Not allowed to add heater or forced air cooling to the device. See Table 4, steps 2 and 5
Daily inspection standard is based on the design at the time of identification
Ta=200℃
See Table 4. Steps 2 and 5
One device per batch, 0 failure
20(C=0)
C1 group
Inspection or test
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Fine leak detection
b. Rough leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical Mechanical inspection
Final test:
Group C3
Variable frequency vibration
Constant acceleration
Final test,
Group C4
Salt gas (when applicable)
Group C5
Not applicable
Group C6
Steady-state working life
Final test:
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Table 3 Group C inspection
GJB128
See Figure 1
Test condition A
Test condition E
See Table 4. Steps 1, 3 and 4
See Table 4, Steps 1, 3 and 4
T=25±3CVe=2 0V
pu=700mW
Not allowed to add heat sink or
forced air cooling
See Table 4. Steps 2 and 5
LTPD symbol
Limit value
Minimum maximum value
Inspection or test
Collector-base cut-off current
3DK105A
3DK105B
Collector-base stop current
3DK105A
3DK105B
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ2005892
Table 4B Final test for group A and group C
GB4587
Emitter-base open circuit
Vegm30V
Vea50V
Emitter-base open circuit
Vea-30V
Ves=50V
lc=300mA
I=30mA
Pulse method (see clause 4.5.1)
lc=300mA
Pulse method (see clause 4.5.1)
Veg=-1V
le=300mA
Pulse method (see clause 4.5.1)
Note: 1) For this test, devices exceeding the limit values ​​of group A should not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6- Notes
Ahpggi
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit value
Minimum value
Initial value
Maximum value
SJ20058-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(limit)CBO, the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01015.le=10mA
Vug-10V.=50mA
f=30MHz
Vcx=10V,1g=0
f-1MHz
lc-500mA.1=50mA
le-50UmA./=/=50mA
LTPI symbol
VnECani
VHECnt
Limit value
Minimum
Maximum
Test or Test
B1 Group
Solderability·
Durability of marking
B2 Group
Thermal shock (temperature cycle)
a. Fine leak detection
b. Coarse leak detection
Final test:
B3 Group
Steady-state working life
Final test:
B4 Group
Internal visual inspection after opening
(Design verification)
Bond strength
B5 Group
Not applicable
B6 group
High temperature life
(not working)
Final test:
SJ20058--92
Table 2B group inspection
GJB128
See Table 4, steps 1.3 and 4
Vea=20VPu=700nW
Ta=25±3℃
Not allowed to add heater or forced air cooling to the deviceSee Table 4, steps 2 and 5
Daily inspection standard is based on the design at the time of identification| |tt||Ta=200℃
See Table 4. Steps 2 and 5
One device per batch, 0 failures
20(C=0)
C1 group
Inspection or test
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Coarse leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test,
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ20058—92
Table 3C group inspection
GJB128
See Figure 1
Test condition A
Test Condition E
See Table 4. Steps 1, 3 and 4
See Table 4, Steps 1, 3 and 4
T=25±3CVe=20V
pu=700mW
Not allowed to add heat sink or
Forced air cooling
See Table 4. Steps 2 and 5
LTPD symbol
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cut-off current
3DK105A||t t||3DK105B
Collector-base stop current
3DK105A
3DK105B
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ2005892
Table 4 Final test of group B and group C
GB4587
Emitter-base open circuit
Vegm30V
Vea50V
Emitter-base open circuit
Vea-30V
Ves=50V
lc=300mA
I=30mA
Pulse method (see 4.5.1)
lc=300mA
Pulse method (see 4.5.1)
Veg=-1V
le=300mA
Pulse method (see 4.5.1)
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6-Notes
Ahpggi
The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). Limit value
Minimum value
Initial value
Maximum value
SJ20058-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the minimum limit of V(limit)CBO at the specified test current, the transistor is qualified. Additional remarks:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Standardization Institute. This specification was drafted by China Electronics Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01015.le=10mA
Vug-10V.=50mA
f=30MHz
Vcx=10V,1g=0
f-1MHz
lc-500mA.1=50mA
le-50UmA./=/=50mA
LTPI symbol
VnECani
VHECnt
Limit value
Minimum
Maximum
Test or Test
B1 Group
Solderability·
Durability of marking
B2 Group
Thermal shock (temperature cycle)
a. Fine leak detection
b. Coarse leak detection
Final test:
B3 Group
Steady-state working life
Final test:
B4 Group
Internal visual inspection after opening
(Design verification)
Bond strength
B5 Group
Not applicable
B6 group
High temperature life
(not working)
Final test:
SJ20058--92
Table 2B group inspection
GJB128
See Table 4, steps 1.3 and 4
Vea=20VPu=700nW
Ta=25±3℃
Not allowed to add heater or forced air cooling to the deviceSee Table 4, steps 2 and 5
Daily inspection standard is based on the design at the time of identification| |tt||Ta=200℃
See Table 4. Steps 2 and 5
One device per batch, 0 failures
20(C=0)
C1 group
Inspection or test
Dimensions
C2 group
Thermal shock (glass stress)
Terminal strength
a. Detailed leak detection
b. Coarse leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test:
C3 group
Variable frequency vibration
Constant acceleration
Final test,
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ20058—92
Table 3C group inspection
GJB128
See Figure 1
Test condition A
Test Condition E
See Table 4. Steps 1, 3 and 4
See Table 4, Steps 1, 3 and 4
T=25±3CVe=20V
pu=700mW
Not allowed to add heat sink or
Forced air cooling
See Table 4. Steps 2 and 5
LTPD symbol
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cut-off current
3DK105A||t t||3DK105B
Collector-base stop current
3DK105A
3DK105B
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ2005892
Table 4 Final test of group B and group C
GB4587
Emitter-base open circuit
Vegm30V
Vea50V
Emitter-base open circuit
Vea-30V
Ves=50V
lc=300mA
I=30mA
Pulse method (see 4.5.1)
lc=300mA
Pulse method (see 4.5.1)
Veg=-1V
le=300mA
Pulse method (see 4.5.1)
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6-Notes
Ahpggi
The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1). Limit value
Minimum value
Initial value
Maximum value
SJ20058-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the applied voltage is greater than the minimum limit of V(limit)CBO at the specified test current, the transistor is qualified. Additional remarks:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Standardization Institute. This specification was drafted by China Electronics Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01015.Steps 2 and 5
LTPD symbol
Limit value
Minimum maximum value
Inspection or test
Collector-base cut-off current
3DK105A
3DK105B
Collector-base stop current
3DK105A
3DK105B
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ2005892
Table 4 Final test of Group B and Group C
GB4587||tt| |Emitter-base open circuit
Vegm30V
Vea50V
Emitter-base open circuit
Vea-30V
Ves=50V
lc=300mA
I=30mA
Pulse method (see 4.5.1)
lc=300mA
Pulse method (see 4.5.1)
Veg=-1V
le=300mA
Pulse method (see 4.5.1)
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6-Notes
Ahpggi
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit values
Minimum values
Initial values
Maximum values
SJ20058-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(limit)CBO, the transistor is qualified. Additional remarks:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01015.Steps 2 and 5
LTPD symbol
Limit value
Minimum maximum value
Inspection or test
Collector-base cut-off current
3DK105A
3DK105B
Collector-base stop current
3DK105A
3DK105B
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current transfer ratio
SJ2005892
Table 4 Final test of Group B and Group C
GB4587||tt| |Emitter-base open circuit
Vegm30V
Vea50V
Emitter-base open circuit
Vea-30V
Ves=50V
lc=300mA
I=30mA
Pulse method (see 4.5.1)
lc=300mA
Pulse method (see 4.5.1)
Veg=-1V
le=300mA
Pulse method (see 4.5.1)
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6-Notes
Ahpggi
The contract or order shall specify the required terminal materials and coatings (see 3.2.1). Limit values
Minimum values
Initial values
Maximum values
SJ20058-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
A3 Steps
Collector-emitter breakdown voltage test circuit The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(limit)CBO, the transistor is qualified. Additional remarks:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01015.
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