This standard specifies the composition, meaning and representation of the power semiconductor device model. This standard applies to high-voltage rectifiers, rectifiers, thyristors, transistors and their modules and components with a current equal to or greater than 5A, as related accessories and components of the product. JB/T 2423-1999 Power semiconductor device model compilation method JB/T2423-1999 standard download decompression password: www.bzxz.net

Mechanical Industry Standard of the People's Republic of China
JB/T2423
恸'舒凸
1999-08-06
Wa 鱻极懂
2000-01-01小
JB/T2423
This standard is a revision of JB/T2423--91 "Nomenclature Method for Power Semiconductor Devices".
The abbreviation rules of this standard are in accordance with the provisions of GB/T1.1-1993. The main contents of this revision of the standard:
The scope of application is expanded to include accessories, components and test equipment of power semiconductor devices as products. b) The letter T for fast-opening type (rectifier tube) and the letter A for high-frequency type (crystalline tube) are added. ) The electrical connection type of semiconductor modules and components is supplemented. Appendix A and Appendix B of this standard are both appendices to the standard. This standard replaces JB/T2423-91 from the date of implementation. This standard was first issued on December 19, 1978. It was first revised and issued on October 24, 1991. It was second revised and issued on August 6, 1999. This standard was proposed and managed by Xi'an Electric Power Electronics Technology Research Institute. This standard was drafted by Xi'an Electric Power Electronics Technology Research Institute. The main drafter of this standard: An Xianman:
1 Scope
JB/T24231999
JB/T242391
This standard specifies the composition of the power semiconductor model, the meaning of each part and the method of expression. JB/T24231999
JB/T242391
This standard applies to high-voltage rectifier stacks, rectifiers, thyristors, and their modules, components, and related accessories and parts of products with a current equal to or greater than 5A:
2 Referenced standards
The provisions contained in the following standards constitute the provisions of this standard by being cited in the small standards. When the standard is published, the versions shown are all valid, and all standards will be revised. All parties using this standard should explore the possibility of using the latest version of the following standards. GB/T8446.1—1987 Heat sink for semiconductor devices GB/T 8446.3—1988
JB/T 4219—1986
JIB/F 5835—1991
JB/T 5842—1991
JB/T 58431991
JB/T6473-[992
JB/T7623-1994
JB/T8157—1995
J13/T 8661—1997
JB/T 8736—1998
JB:T 8757—1998
JB/T 10097—1999
3 Composition of device models
Heat sinks for power semiconductor devicesInsulation parts and fasteners for power semiconductor device test equipmentModel naming method for power semiconductor devicesChannel assembly
Die positioning ring for power semiconductor devices
Connectors for power semiconductor devices
Oxygen-free copper shell for power semiconductor devices
Rectifier shell for motor vehicle
Profile heat sink for power semiconductor devicesOuter dimensions of power semiconductor moduleStructural parts of power semiconductor modules
Alumina ceramic substrate for power semiconductor modulesHeat pipe heat sink for power semiconductor devices
Shell for power semiconductor devices
3.1 Composition of discrete device models
Va pole 1999-08-06
2000-01-01
JB/T2423
Numbers
Device specification serial number
Characteristic parameters and (or) important parameters of the level plus the main voltage level
Main current value (unit: A)
Device series code
Device category code
The discrete device model consists of four parts: the first part uses two Chinese pinyin letters to indicate the type of device (category and series), the second part uses Arabic numerals to indicate the rated main current and main voltage of the device, the third part uses Chinese pinyin letters to indicate the characteristic parameters and (or) other important performance parameters of the device, and the fourth part uses three Arabic numerals to indicate the specification serial number of the device. 3.2 Composition of semiconductor modules and component models. 3
Alphabet mathematics
Alphabet mathematics
Specification number
Structure and characteristic parameters
DC output voltage or other rated main voltage levelDC output current value or other rated main current value (unit: A)Electrical connection code inside the module or component
Type of discrete devices constituting the module or componentRepresentation of semiconductor module (M) or component (U)The model of a semiconductor module or component consists of four parts: the first part is three Chinese pinyin letters, the first letter represents the semiconductor module (M) or component (U), the second letter represents the type of discrete devices constituting the module or component, and the third letter represents the type of electrical connection inside the module or component: the second part uses Arabic numerals to represent the DC output current value or other rated main current value and the DC output voltage or other rated main voltage level of the module or component; the first part uses Chinese pinyin letters to express the structure and characteristic parameters, etc.; the fourth part uses Arabic numerals to express the specification number of the module or component. 4 Letters and meanings of the first part of the device model
4.1 Discrete device model first part
The letters and meanings of the first part of the discrete device model shall comply with the provisions of Table 1. 2
Device category
Transistor
Edge gate
Bipolar
Transistor
Device series
JB/T24231999
Device category
High voltage stack
Fast (fast recovery)
Motor vehicle
Fast element pass
Rotating excitation
First-level recombination
Third-level recombination
Static induction
Indicates shed field effect
Standard type
Fast type
4.2 Semiconductor module and component type The first part of the module or component model and its meaning shall comply with the provisions of Table 2. Table 2
First letter
Analog or component code
Second letter
Discrete device type code
Current rectifier
Ordinary rectifierbzxz.net
Motor vehicle rectifier
Transmission rectifier
Fast rectifier
Switchable brake tube
Fast brake tube
Reverse conduction transistor
Bidirectional Section
Back-pass thyristor
MOS gate thyristor
Static induction thyristor
Rectifier
Thyristor
Mixed induction
Thyristor
Device series
For welding machine
Asymmetric
Can be turned off
Quick opening
Insulation inertia
Static induction
First
Electrical connection code
See Appendix A
First letter
Module or component code
JB/T24231999
Table 2 (end)
Second letter
Device type code
Single transistor
Combined transistor
Three-stage combined transistor
Electrostatic transistor||tt ||Gate Bipolar Transistor
Field Effect Transistor
Second Letter
Electrical Connection Code
Unit 1
Unit 3
Unit 4
Unit 5
Unit 6
Unit 7
Unit 8
Note: A module is a device in which the dies of each discrete device are connected and packaged as a non-detachable assembly. An assembly is a device in which the ends of each discrete device are reversely connected and assembled with fasteners. An assembly is generally detachable, and after disassembly, each discrete device should have the specified performance before assembly: 5. Display Method of the Second Part of the Device Model
5.1 The second part of the device model is composed of Arabic numerals that represent the main current (or DC output current) and main voltage (or dc output voltage) levels of the device in sequence, separated by a short dash. 3.2 The main current (or the output current) value (unit: A) is given as the original value. Main current: For thyristors, it is the average forward current; for ordinary thyristors and fast thyristors, it is the average on-state current; for bidirectional thyristors, it is the RMS on-state current; for turn-off thyristors, it is the turn-off peak current; for reverse-conducting thyristors, it is expressed in fractions, with the numerator being the average on-state current and the denominator being the average reverse current; for thyristors, it is the collector current; for bridge components or modules, it is the DC output current. 5.3 The proportional relationship between the number of main voltage (or DC output voltage) levels and the value of the main voltage (or DC output voltage) (unit: V): Except for the high-voltage rectifier stack and high-voltage rectifier component, the ratio is one thousandth, and for other types of devices, it is one percent. The decimal point is omitted for the levels of electrodes below 100V, such as 0.5 for the main voltage of 50V. Main voltage: for rectifiers, it refers to the reverse repetitive peak current; for other types of thyristors, it refers to the reverse repetitive peak output voltage and the off-state repetitive peak voltage; for transistors, it refers to the collector-emitter voltage; for bridge components or modules, it refers to the DC output voltage. 5.4 The model containing the first and second parts of the model is the basic model. The basic model of the device must be given as one of the device's symbols. For example:
The model of a common rectifier with an average forward current of 5A and a reverse repetitive peak voltage of 800V should be: ZP5-8. The model of the four-level composite tube with collector current of 200A and collector-emitter voltage of 1200V should be: JC200-12. 6 The third part of the device model
6.1 The third part of the model uses the Chinese phonetic alphabet to list the characteristic parameters and (or) important parameters of the device, as well as the structural form and cooling method. Whether this part of the model needs to be given, if necessary, what parameters or contents are given shall be specified by the detailed specifications of the device: 6.2 The five parameters of the critical rise rate of off-state voltage, critical rise rate of on-state current, circuit commutation turn-off time, critical commutation voltage and reverse recovery time shall comply with the provisions of Regulation B according to the classification. Other parameters that need to be classified shall be specified in the relevant detailed specifications. 4
7 The fourth part of the device model
JB/T24231999
7.1 The fourth part of the model uses three Arabic numerals to indicate the specification number of the device. The specification number indicates the mechanical structure of the device and the combination of all or some parameters.
7.2 The specification serial number shall be prepared by the device manufacturer and submitted to the industry technical center for approval and filing. 7.3 If the detailed specification clearly states that the serial number does not include its third part, but gives the fourth part of the model, the second and fourth parts of the model shall be separated by a short dash to avoid confusion: 8 Models of device accessories, components and test equipment 8.1 Models of device heat sinks and heat pipes
The models of device casting heat sinks, profile heat sinks and heat pipe radiators shall comply with the provisions of 1.1 of GB/T8446.1-1987, 2.1 of JB/T8157-1995 and 4.1 of JB/T8757-1998 respectively. The models of insulating parts and fasteners of the radiator shall comply with the provisions of 1.1 and 2.1 of GB/T 8446.3-1988 respectively. The models of ceramic metal tube shells, oxygen-free copper tube shells and motor vehicle rectifier tube shells of the device shall comply with the provisions of 1.1 of JB/T10097-1999, 3.1 of JB/T 6473-1992 and 3.1 of JB/T 7623-1994 respectively. 8.2 Models of device components The models of gate assemblies, core locating rings and connectors of the device shall comply with the provisions of 3.1 of JB/T5835-1991, 3.1 of JB/T5642-1991 and Chapter 3 of B/T5843-1991 respectively. 8.3 Models of module structural parts and device test equipment The models of structural parts and alumina ceramic mounting plates of power semiconductor modules shall comply with the provisions of Chapter 3 of JB/T8661-1997 and Chapter 3 of JB8736-1998 respectively.
9 Management of product models
Enterprises producing various types of rectifiers, thyristors, transistors, semiconductor modules, semiconductor components and their related accessories, components, structural parts and test equipment as products shall handle product model registration in accordance with the "Management Measures for Power Semiconductor Product Models". Appendix A (Difficult Appendix) Electrical connection type and code Electrical connection type Code JB/T24231999 Appendix A (Difficult Appendix) Electrical connection type and code JB/T24231999 Table AI (continued) Electrical connection type Code 400 49404 Electrical connection type Code 400 49404 Electrical connection type Code 400 49404 Te
This book
This book
JB/T2423
Table AI (end)
This book
Connection type
This book
￥Coming car
This book
This book
This book
This book
JB/T2423
Appendix B
(Appendix of the standard)
Level of device parameters
The level of critical rise rate of off-state voltage (dv/dt) cr is divided according to Table B. Table 1
( dvfdt I cr
The level of critical rise rate of on-state voltage (dvidt) cr is divided according to Table B2. Table B2
( dvidt ) ur
The level of circuit commutation turn-off time tg is divided according to Table B3. 1
The level of critical rise rate of inter-commutation voltage dvfdt, t; is divided according to Table B4. B4
(duct） cr
The levels of reverse recovery time tr are divided according to Table B5, tr
Xinkuilu
JB/T2423
Lai880b1230
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Xianjioupai1 and 4.1 of JB/T8757-1998. The models of the insulating parts and fasteners of the heat sink shall comply with the provisions of 1.1 and 2.1 of GB/T 8446.3-1988 respectively. The models of the ceramic metal tube shell, oxygen-free copper tube shell and motor vehicle rectifier tube shell of the device shall comply with the provisions of 1.1 of JB/T10097-1999, 3.1 of JB/T 6473-1992 and 3.1 of JB/T 7623-1994 respectively. 8.2 Models of device components
The models of the gate assembly, die positioning ring and connector of the device shall comply with the provisions of 3.1 of JB/T5835-1991, 3.1 of JB/T5642-1991 and Chapter 3 of B/T5843-1991 respectively. 8.3 Models of module structural parts and device test equipment The models of structural parts and alumina ceramic mounting plates of power semiconductor modules shall comply with the provisions of Chapter 3 of JB/T8661-1997 and Chapter 3 of JB8736-1998 respectively.
9 Management of product models
Enterprises producing various types of rectifiers, thyristors, transistors, semiconductor modules, semiconductor components and their related accessories, components, structural parts and test equipment as products shall handle product model registration in accordance with the "Management Measures for Power Semiconductor Product Models". Appendix A (Difficult Appendix) Electrical connection type and code Electrical connection type Code JB/T24231999 Appendix A (Difficult Appendix) Electrical connection type and code JB/T24231999 Table AI (continued) Electrical connection type Code 400 49404 Electrical connection type Code 400 49404 Electrical connection type Code 400 49404 Te
This book
This book
JB/T2423
Table AI (end)
This book
Connection type
This book
￥Coming car
This book
This book
This book
This book
JB/T2423
Appendix B
(Appendix of the standard)
Level of device parameters
The level of critical rise rate of off-state voltage (dv/dt) cr is divided according to Table B. Table 1
( dvfdt I cr
The level of critical rise rate of on-state voltage (dvidt) cr is divided according to Table B2. Table B2
( dvidt ) ur
The level of circuit commutation turn-off time tg is divided according to Table B3. 1
The level of critical rise rate of inter-commutation voltage dvfdt, t; is divided according to Table B4. B4
(duct） cr
The levels of reverse recovery time tr are divided according to Table B5, tr
Xinkuilu
JB/T2423
Lai880b1230
19XXXXling
100044
WanduanX/X
ZhangjuXXX,XXX
19XXjiXXcabin
Xweiflounder
DepxXX.XXwing
Xianjioupai1 and 4.1 of JB/T8757-1998. The models of the insulating parts and fasteners of the heat sink shall comply with the provisions of 1.1 and 2.1 of GB/T 8446.3-1988 respectively. The models of the ceramic metal tube shell, oxygen-free copper tube shell and motor vehicle rectifier tube shell of the device shall comply with the provisions of 1.1 of JB/T10097-1999, 3.1 of JB/T 6473-1992 and 3.1 of JB/T 7623-1994 respectively. 8.2 Models of device components
The models of the gate assembly, die positioning ring and connector of the device shall comply with the provisions of 3.1 of JB/T5835-1991, 3.1 of JB/T5642-1991 and Chapter 3 of B/T5843-1991 respectively. 8.3 Models of module structural parts and device test equipment The models of structural parts and alumina ceramic mounting plates of power semiconductor modules shall comply with the provisions of Chapter 3 of JB/T8661-1997 and Chapter 3 of JB8736-1998 respectively.
9 Management of product models
Enterprises producing various types of rectifiers, thyristors, transistors, semiconductor modules, semiconductor components and their related accessories, components, structural parts and test equipment as products shall handle product model registration in accordance with the "Management Measures for Power Semiconductor Product Models". Appendix A (Difficult Appendix) Electrical connection type and code Electrical connection type Code JB/T24231999 Appendix A (Difficult Appendix) Electrical connection type and code JB/T24231999 Table AI (continued) Electrical connection type Code 400 49404 Electrical connection type Code 400 49404 Electrical connection type Code 400 49404 Te
This book
This book
JB/T2423
Table AI (end)
This book
Connection type
This book
￥Coming car
This book
This book
This book
This book
JB/T2423
Appendix B
(Appendix of the standard)
Level of device parameters
The level of critical rise rate of off-state voltage (dv/dt) cr is divided according to Table B. Table 1
( dvfdt I cr
The level of critical rise rate of on-state voltage (dvidt) cr is divided according to Table B2. Table B2
( dvidt ) ur
The level of circuit commutation turn-off time tg is divided according to Table B3. 1
The level of critical rise rate of inter-commutation voltage dvfdt, t; is divided according to Table B4. B4
(duct） cr
The levels of reverse recovery time tr are divided according to Table B5, tr
Xinkuilu
JB/T2423
Lai880b1230
19XXXXling
100044
WanduanX/X
ZhangjuXXX,XXX
19XXjiXXcabin
Xweiflounder
DepxXX.XXwing
Xianjioupai
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