GB/T 15651.2-2003 Semiconductor discrete devices and integrated circuits Part 5-2: Basic ratings and characteristics of optoelectronic devices
Some standard content:
The expected structure of this series of standards is:
Part 5-1 Optoelectronic devices
Part 5-2, Optoelectronic devices
Basic issues Specifications and characteristics
Test methods
Part 5-3: Optoelectronic devices
GI, T15651.2—2003/1EC 60747-5·2:1997 This part is equivalent to IEC60/47-5-2, 1997 Single conductor discrete devices and integrated circuits Part 5-2: New basic values and characteristics of optical devices in English
In order to unify the parameter symbols specified in GB/T11499, the symbol of dark current in this part is defined as "ur: In order to make it easier to use, this part has made the following editorial changes: 8) "The introduction of this part of C747\ is changed to "this part" b) The decimal point "\" is used to replace the decimal point "\" in the original text; in addition to the foreword in the original text, the foreword of this standard is added: d) All tables have added table sequence numbers and table titles. Appendix 1 of this part is an informative appendix, The appendix is a normative appendix. This part was proposed by the Ministry of Information Industry of the People's Republic of China. This part was submitted by the China Electronics Standardization Institute (CESI). The drafting team of this part is Huayu Optoelectronics Co., Ltd. Semiconductor Factory. The main contributors of this part are Chen Lan, Naren and Wang Shoubi. It will be published soon.
1 Scope
GR/T15651.2——2003/1EC:60747-5-2,1997 Semiconductor discrete devices and integrated circuits
Part 52: Optoelectronic devices
Basic ratings and characteristics
This part gives the basic ratings and characteristics of the following types and categories of optoelectronic devices, using optical fiber systems or Except for subsystems, semiconductor photoelectron emitting devices, including: light emission lamp (LEL), infrared emitting diode (IRFT5), laser anode, semiconductor photoelectric detection devices, including: photodiode: photoelectric tube: semiconductor photoelectric device. Semiconductor devices that perform optical sealing work inside, including: photocoupler, 2 Normative references The clauses in the following documents become clauses of this part through the reference of this part of GB/1156:1. For all referenced documents with an annotation date, all subsequent amendments (excluding errata) or revisions are not applicable This part applies, however, all parties concerned are encouraged to use the latest versions of these documents, which are not the referenced documents of the past. The latest versions apply to this part. H/T 2123.1-2C5: Environmental testing for electronic products - Part 2, Test method Test A: Low temperature (IEC 00682-11990). Environmental testing for electronic products - Part 2: Test method Test B: Low temperature (IEC GB/T 2423.2-20C1. IEC 60063-2-21974. Basic environmental test regulations for electronic products: Stress test (EGR/T 2123.A—1983
IEC.60068-2-3.1984)
GB/T 2425. 3--F59E
IEC IEC065 2-27.19873
Electrical products for environmental testing - Part 2: Test and guidance, fire hazard test of products - Part 2: Test methods - Part 1: Needle flame test GB/T 5169.—189?
IEC.60655-2-2,1991)
GB/T1565:.3—2U03 Semiconductor discrete devices and integrated circuits - Part 5-3, Diffusion test methods for optoelectronic devices (IEC:6074-5 3,1997,IDT
GB8898-2007 Safety requirements for audio and video electronic equipment [EC:6(0651992]JFCG5058-2-6:1S95 Environmental testing Part 2: Test Fc: Vibration sine) 1EC60068214:1584 Environmental testing Part 2: Test N, overflow change 1E60358-2-17.1S94
Environmental testing Part 2: Test Part 2: Test cold and lead condition (12-12 1 Environmental tests) IEC6u53-3-30:1997 GB/1:15651.2--2003/IEC.69747-5-2:1997 TF.63351:1969 Specifications for production devices - Part 1: Standards for insulation of low-voltage devices [IEC 655-1:1992 Part 1: Specifications, requirements and tests for low-voltage devices IEC 69717-5-1:1997 Conductor discrete components and integrated circuits - Part 5-1: General principles for optoelectronic devices 3 Light-emitting diodes (except for optical fibre systems or subsystems) 3.1 Type
Light-emitting diodes with specified or increased wattage ratings. 3.2 Materials of semi-suspended parts
Type of chemical, etc.
3.3 Color
3.4 Properties of appearance and packaging
3.4.1 External color drawing number specified by EC and (or) national standards. 3.4.2 Installation method: glass/metal/plastic/others 3.4.3 Identification of the lead-out terminal and any markings between the lead-out terminal and the tube, 3.5 Limit value (for large system), unless otherwise specified, applicable to the entire operating range 3.5.1 Low and high storage temperature ()
3.5.2 Low and maximum production temperature or completion temperature (T. or T..) 3.5.3 Reverse voltage (V).
, not suitable for positive and negative components, 3.5.4 Maximum forward direct current when the ambient temperature is 25°C, and derating curve or derating factor when applicable 3.5.5 Under the specified pulse conditions, the maximum forward full value current when the ambient temperature or temperature is 25°C (1°C) 3.6 Photoelectric properties
Photoelectric properties see 1.
For special diodes, the characteristics of each diode shall be given. For special applications, additional characteristics shall be specified. Table 1 Photoelectric properties of light-emitting diodes
Forward
Reverse
Active white specification Machine output light
Strong medical t
Fast his reception time
Light extinction bandwidth applicable)
And off time (applicable month >
Meanwhile, the angle is applicable)
Under no other specification,
a----5t
TP specification (forward design)
V: according to the actual specification, recovery specification: point performance or bed rush]
Find the specification to take the induction) || tt||Resignation value light radiation power half careful,:
3.6.+ leave
not active month old pole and pole shop connected to the system two investment borrowing equipment, h
then the relevant continent both the luminous still reflected solid angle is not negligible, according to the provisions of the size of the solid angle, for the Sichuan ten composite energy tube reduced pole tube, should also be required to record the intensity of the complete receiving,
3.7 Supplementary information
3.7.1 Vehicle radiation diagram
GB/115651.2—2003/IEC60747-5-2:1997 Typical relationship diagram of luminous intensity and angle expressed in polar coordinates or rectangular coordinates. 3.7.2 Spectral diagram (when applicable)
represents the relationship between luminous intensity and drum length. 3,7.3 Machine pole description
When applicable, installation and welding strip design.
Infrared emitting diode (except for fiber optic systems or subsystems) 4.1 Type
Environmental rating or shell rating of infrared emitting diode, 4.2 Semiconductor material
Special chemical, etc.,
4.3 Appearance and sealing details
4.3.11C and (or> national standard appearance number: 4.3.2 Packaging method waste/metal/material/other. 4.3.3 Identification of lead terminals and marking of any connection between lead terminals and tubes. 4.4 Rated value (for large systems), input is not easy to have provisions , Marriage quantity working temperature range 4.4.1 Low and maximum storage temperature ():
4.4.2 Minimum and maximum T operating environment tolerance variable tube shell temperature (Tm or 1.)), 4.4.3 Measured reverse voltage (Ve)
4.4.4 Measured reverse DC current when the ambient temperature rate or tube charging temperature is 2500 million and derating curve or derating factor, 4.4,5 when applicable, under the specified conditions, the ambient temperature is reduced or the temperature is reduced to 25℃ when the measured value of the power (1m) 4.5 Photoelectric characteristics
Photoelectric characteristics see Table 2,
For special applications, the characteristics of the attached anode should be determined. Table 2 Photoelectric characteristics of infrared emitting diodes
4, 5, 6
Positive voltage
Reverse battery
Radiation intensity of the output axis
Peak emission length
Radiation bandwidth (time)
Switching time (month)
Half intensity angle (month)
Periodicity (active chamber)
Spectral range ... -25
According to regulations (DC or natural gas)
Yu According to current regulations
Allow regulations (true pulse rate)
Ir According to regulations【Direct pulse connection】
The value of the frequency identification function limit, technical
4.E, regulations
If the solid angle of the test radiation intensity is technically negligible, the maximum value of the solid angle should be specified, comfortable 9.
GB/T 15651.2--2003/IEC 60747-5-2,19974.6 Supplementary information
4. 6. 1 4.6.2 Spectral diagram (when applicable)
Typical relationship between output power and radiation intensity and wavelength in coordinates or at right angles
4.6.3 Specifications
Installation and connection conditions when applicable.
5 Photodiodes (except for optical fiber systems) 5.1 Class
Environmentally rated or rated output for small signals and switches, 5.2 Conductor materials
Silicon, etc.
5.3 Detailed information on appearance and package
5.3.1 Appearance drawing number of EC and (or> national standard. 5.3.2 Sealing method, glass/metal/plastic/other. 5.3.3 Terminal identification and connection mark between lead-out terminal and tube charging 5.4 Limit value (absolute maximum system), unless otherwise specified: including the entire operating temperature range 5.4.! Maximum low-voltage storage temperature ()
5.4.2 Minimum and exhibitor operating environment temperature or tube charging temperature (T change T), 5.4.3 Maximum reverse voltage (V).
5.4.4 General use:
When the ambient or tube temperature is ℃, the maximum total dissipated power (P) and the derating factor (K) above 25% are required. Derating curve 5.5 Electrical characteristics
Electrical characteristics are shown in Table 3.
Table 3 Electrical characteristics of photodiodes
Reflection voltage under illumination
Optical path sensitivity (approximate time)
Switching time (approximate time 1
Opening and falling control
Rise time and turn-off time
Acid is not otherwise specified,
Tk T.-2h3
V according to the specification, E, or E. According to the environment
V: according to the specification, F,-0
Under the condition of super-determined high = T,
V; Amine, f., The V and F values of the detector are determined in accordance with the provisions of the invention and the circuit design. The V values are determined according to the specifications. The original light source A of FF22i-11969 is used, and the color temperature is -1KK. The monochromatic light period is determined by the color temperature of the filament or the color temperature of the filament. 5.6 Supplementary information 5.6.1 Typical recording line diagram. 5.6.2 Typical single light band diagram showing the relationship between the light sensitivity and wavelength. 6 Photoelectric tube (except for optical fiber systems or subsystems) 6.1 Type GB/T 15651.2—2003/IEC 60747-5-2:1997 Photodiodes with ring rating or refractive rating for small signals and switches, 6.2 Semiconductor materials
Silicon, etc.
6.3 Polarity
NPNPNP
6.4 Detailed information on appearance and package
6.4.1 IEC and (or) national standard appearance drawing number. 6.1.2 Package method: glass/gold/plastic/other. 6.4.3 Identification of lead terminals and connection with tube 6.5 Limiting values (absolute maximum values), unless otherwise specified, apply over the entire operating temperature range. 5.1 Minimum and maximum storage temperature (T,) 6.5.2 Minimum and maximum operating ambient temperature or tube charging temperature (Tb or T) 6.5.3 Maximum base-emitter voltage (Ve) at which the base charge is zero. 6.5.4 When the collector is connected externally:
6.5.4.1 Maximum emitter current at which the emitter-base voltage (Vc) is zero. 6.5.4.2 Maximum collector current at which the collector-emitter voltage (Vrg) is zero. 6.5.5 When no external base connection is made:
Maximum emitter-plate voltage (V).
6.5.6 Measure the maximum direct current of the electrode (J).
6.5.7 When applicable,
- When the ambient humidity or the shell humidity is 23℃, measure the total power consumption (ratio): and the derating factor F2 above 25℃ is used for the derating curve. B.6 Electrical characteristics
The electrical characteristics are shown in Table 4.
4 Electrical characteristics of photoelectric crystal
6, 6, 3
Light table voltage
Australian power transmission battery
Dark current
Ticket voltage
Unless otherwise specified in II,
TI Cheng T.,-ST
V is set, fg=3,H or F
is specified
according to the regulations, in-D,E,0
V control stipulates one 0,F,=0, at
the pet's commercial temperature T or working T
Fr is set.I,=G,F—D
Jem or Ie
GA/T15651.2—2003/TEC 60747.5-2:1997 dear
! The voltage of the transmitting board base is slow or there is no connection. The transmitting electrode breakdown voltage is the single loss voltage and the voltage is the light loss condition (when applicable). The switching time (valid for use) is the time when the external time drops. The opening time is the time when the external time drops. The disconnection time is as follows: Unless there is any doubt, Ta or T.~ 25℃
In accordance with the provisions, according to 6.6.1
aUE according to the specified period
length and length
determine the voltage sink
Ve and, Fr or F, according to the consumption
Va and F or F change the provisions
Voaeto
will be irradiated with the standard light source A of TEC60306-1:1262, that is, with a temperature of T-2856.K, the disk lamp or the specified monochromatic light source. When used,
6.7 Supplementary prediction
6.7.1 Typical sensitivity curve
Typical spectrum
shows the relationship between the sensitivity of the light and the length. Photoelectric combination (with shooting 7.1 Type of output tubes for signal isolation or photoelectric combiners with specified case number. 7.2 Semiconductor materials: diodes, etc., type of chemical, aluminum, etc., output tubes, etc. 7.3 Output polarity 7.4 Detailed information on appearance and package 7.4.11 EC and (or) national standard appearance drawing number. 7.4.2 Potential difference method glass/metal/material/other 7.4.3 Marking of any reverse connection between output and output terminals. 7.5 Limits (absolute system). Unless otherwise specified: suitable for the entire operating temperature range, specify any limiting conditions, such as time, measurement, pulse width, freezing wall, etc. 7. 5.1 Low and maximum storage temperature (T). 7.5.2 Lowest and highest ambient or base point T operating temperature (Tm or 1). 7.5.3 Maximum return temperature (T%)
Required for long welding time and minimum distance between the shell and the base. 7.5.4 Maximum reverse input DC voltage (V). 7.5.5 Base-to-emitter voltage when the base is open (Vm). GB/T15651.2—2003/IEC:60747-5-2;19977.E.6 Maximum voltage between the emitter and the base when the base is connected externally (Vac). 7.5.7 Maximum voltage between the emitter and the base when the base is open (V) when the base is connected externally. 7.5.9 Maximum voltage between the emitter and the base when the base is connected externally (V). 7.5.9 Maximum DC surge isolation voltage or higher value isolation voltage (V or Vm). The waveform and repetition rate shall be specified.
7.5.10 When applicable, the maximum surge isolation voltage (Vox). The maximum surge isolation voltage YrunbzxZ.net
QDVIL
1CSuec
Figure 1 Test voltage
Maximum DC current (point)
7.5.12 The positive DC surge current (point) and the derating curve or derating system shall be specified when the ambient or required temperature is 25 ℃. 7.5.13 Maximum peak input current (1) when the ambient or reference point limit is 95°C, and the specified pulse conditions, 7.5.14 Maximum output power dissipation of the device (P>) when the ambient or reference point temperature is 35°C, and the derating curve or derating factor. 7.5.15 Maximum total power dissipation of the device (P) when the ambient or reference point is reduced to 25°C, and the derating curve or derating factor, 7.6 Electrical characteristics
Electrical properties are shown in the table.
Table 5 Electrical characteristics of optocouplers
Diode positive current store
Object diode bone and to the electricity supplier
Recruitment of electricity batch one good equipment telephone
Collection frequency one government electricity active state
First power recovery one basic thermal current (applicable
Unless otherwise specified,
T* ~25T
[,according to regulations
V.according to regulations
1 layer of nuclear current determination,Jp=(CF-U
（version energy）
Ven control determination,F=0,Ir—
V technical current difference,—0,g—Ca
Cheng T control course determination
Vs length regulation-2.ID,Tu
or work u according to regulations light||tt ||CB/T15651,2-2003/IEC60747-5-2:1997
American electrode-emitter chain and circuit
Basic voltage (for wine
Energy conversion ratio
Differential current compensation ratio (for washing)
Output isolation resistance
Table 5 continued)
Unless otherwise specified
T...x Ia=25t:
Provide the principle of sharing.-0
[r break and V according to P-
Ir micro eVee according to the determination.g=!
Pre-military change provisions
Vo according to the quality
[Input-output production Beijing)
f=1MHzp-&,-0
and American time (Chuyin time)
Peking University time
VuelHL changed to nominal T technical regulations,
fall time
open time
turn off time to
cut off offer (applicable
three working cautious parts
test voltage according to regulations
V,I,,R,. and nominal Ie are specified,|| tt||The test circuit is dark and requires
or according to the specified small
all input terminals should be connected to another one, and all front terminals should be connected to -· together, which meets the
cut-off rate. The size of the power conversion rate is 0.75 times the low rate of the non-appointed alternating current transmission ratio, 7.7 specifications are filled with reinforced materials
鈥淨take into account,
photoelectric coupler with electric shock protection
8.1 Type
Optocoupler with rated input or output protection, with. (Here is the type of input (or) output". Optocoupler with short-circuit or reinforced insulator design to provide electrical shock protection. All requirements contained in this chapter are applicable to optocouplers with solid terminals in a fashion, regardless of the structure of the light! Output (such as: photoelectric tube, welcome box, etc.). 5.2 Semiconductor materials
.2.1 Input (see Section 7 or any subsequent clause). 8.2.2 Output (see Section 7 or any subsequent clause). B.3 Appearance and packaging details
8.4 Rated values (see the manufacturer's instructions for details) 8.4.1 Safety rated values
a) Maximum ambient temperature (>
3) Maximum current or input power: the output power of the device or the output power of the device. 8.4.2 Functional rated values
a) Values related to the average installation
-temperature (see Section 7 or any subsequent clause). Total power consumption (see Chapter 7 or any subsequent clauses), related to input and output voltage (see Chapter 7 or any subsequent clauses), power consumption (see Chapter 7 or any subsequent clauses), power consumption, see Chapter 7 or any subsequent clauses, 8.4.3 Rated isolation voltage (V) a) Rated repetitive peak isolation voltage (Vu) (repetitive); e) Rated pulse isolation voltage (Vu) 8.5 Electrical characteristics GB/T 15651.2-2003, 1EC 60747-5-2, 1997 Except for those newly listed in the first or later inspection, the following characteristics should be considered. 8.6 Electrical, environmental and (or) durability test data (supplementary data) Table S and Table 7.
Table 6 Electrical characteristics
Imperature resistance (A)
Isolation resistance
High voltage (failure condition)
See 5.5 of GB/T61.2
In>it* YmTm,Vu-Ec V
Failure conditions (6.4. ,Y=,Vm-V
For the minimum requirements, see C6069.L,J92. Text symbols
Xiaoyi
8.5.1 As a point-type test, the partial discharge test (method B should be carried out after any other related separation test. During the ant test, other pre-separation test voltages can be added, but they should be carried out before the partial discharge test. The separation test voltage must be lower than V, GB/T:551.3-2)03 5.5
日.6.2 During the batch control test cycle, the local postal discharge test (method A, magnetic damage test> should be completed on a single sample. It can be defined as the number of products produced in a week using the same production line and production conditions. These products may have some special numbers that are not within the test range. Each production batch is tested for 80 pieces. If only certain products are produced in a week, the number of test samples should be determined in contact with the relevant organization.
8.6.3 Regular test and periodic test (every 12 months) should include the following groups (8.6.3.1~8.6.3.5), with the following conditions: - Zero failure should be achieved:
If one failure occurs in 13 devices, the laboratory uses another device to conduct a test to reduce the failure level. - Maximum failure:
GB/T 15G51.2-2003/1EC 60747-5-2,19978. 6.3.1 Pretreatment
According to the failure standard in the manufacturer's product manual, coal heat resistance
2605v.5-1s
surface charge ground
Method B, VP×VroV>[EC60747-5-1:197,6.4.16.2e)+ta5pC-your number of tests
bag according to the manufacturer's specifications.
Two-way resistance
V.-S0U VeTh .R.-10t: 0.
8.6.3.2 Group 1, 20 samples
8.6.3.2.1 Test
Pretreatment (see 9.5. 1)
Rapid change (see IEC60358-2-14, 1584) TmnTm, 10 cycles, dwell time 3h
E60068261995)
10 cycles on each axis.
# Shock (see GB/2423.51995)
Half sine wave, 3 shocks in each direction.
Chisel seal (not applicable to plastic seal, see 1EC60068-2-17: 1994) pressure 200kPa, holding time.
High temperature (see G/T: 2423, 2-2001) (um.700V), T.1n5. Holding time 161, humidified heat 1EC60068-2-30: 1980)
55℃, secondary cycle
Temperature extension (see CB/2423, 1-2001) Tn.2 h.
Stable heat (see GH/T2423, 3-1993) 85℃. RH: 85% holding time 21d
day.6.3.2.2 For these tests, the mother low resistance is dry for 1h-~2h, at least before waiting for 6, the surface of the medicine plate (force method A)
F..-1.5 (see IEr 50747--11937+6.4.16.2)) 95pC: two disconnection resistance
25C,V -50n V,, under 1c kV, Ra>101. - Surge test (see GA9R-2C07,14,2.4). "Network disconnection resistance
25C.V.. 500 V, Rm..10* n.
Day.6.3.3 Group 2, 30 samples
8.6.3.3.1 Test or inspection
Pretreatment (see 8.6.3, 1).
Robbery safety test (see Appendix B)
GB/T15651.2—2003/IFC60747-5-2:1997 Limit value under the condition of failure: large input flow or maximum auxiliary efficiency, one worker. , maintain 20,000. 8.6.3.3.2 Lowest true most cost test
Surface electricity (force method A)
F.1.251EC60747-5-1:1997.5.4.16.2e>).a5pC isolation electricity
25C,V=ECC V,K02>10\0.
8.6.3.43 minutes, 30 samples
8. 6.3, 4. 1 Test or inspection
Pretreatment (see 8.6.3.1)
Auxiliary safety test adjustment (see Appendix B)
Extended value under failure component, maximum extraction discharge or measured output power consumption, T...T maintained for 72h, day.6.3.4.2 Final measurement (8.6.3.3.2)
8.6.3.54 Grouping: 40 samples
8. 6, 3. 5. 1 Inspection
--Isolation resistance, at:
e)Ttw(min.=1m), V-5 V.R>lctl nb)T.Vm=500VF.Ka>10n
8.6.3.65 Grouping: 10 samples
8.6. 3.6.1 Inspection
External membrane
Appearance leakage:
Flammability test (CB/T6169.5-1997) Table 7 Test items and questions for photoelectric exhaustion with electric shock protection 1, Section test (non-destructive
1.1 Surface charge, under 1.87sVm, (Vu>Method y5pC1.2 Storage number fast test according to the buried range of the system
2 Can accompany the test (drum) = B0.-heart
2. . External performance test according to the manufacturer's standard
2. 2 For natural
2 3 The central surface quality is 1.5 Vy, (Vu square Hong: A qrx2.4
Parameter detection according to the manufacturer's specification
with high resistance, yuan 8.6.3.
External leakage distance and external, trace distance -, -G manufacturer twisted isolation circuit diagram -40.=
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