This standard specifies the thermal cycle load test method for common rectifiers, common thyristors and their derivative devices. This standard is applicable to product cycle inspection and identification tests. This standard is not applicable to product reliability grading (or verification) tests. JB/T 5848-1991 Thermal Cycle Load Test Method Guide JB/T5848-1991 Standard Download Decompression Password: www.bzxz.net

Mechanical Industry Standard of the People's Republic of China
Guidelines for Thermal Cycle Load Test Methods
1 Subject Content and Scope of Application
JB/T5848--91
This standard specifies the thermal cycle load test methods for common rectifiers, common thyristors and their derivative devices (hereinafter referred to as products). This standard is applicable to product cycle inspection and identification tests. This standard is not applicable to product reliability grading (or verification) tests. 2 Reference standards
GB4939
GB4940
GB3187
GB2900.32
GB2828
3 Terms
Ordinary rectifier
Ordinary thyristor
Basic terms and definitions for reliability
Electrical terms Power semiconductor devices
General specification for discrete semiconductor devices
Batch inspection counting sampling procedures and sampling tables 3.1 Thermal cycle load test
A test in which the product is subjected to intermittent power supply according to the specified number of cycles so that its junction temperature changes as specified. 3.2 Durability
The ability of the product to complete the specified function when it reaches a certain technical or economic indicator limit under the specified conditions of use and repair. 3.3 Failure
The product loses its specified function.
3.4 ​​Failure mode
The manifestation of failure.
3.5 Durability test
A test conducted within a certain period of time to examine the relationship between the performance of the product and the influence of the applied stress conditions. 3.6 Wear failure
Failure of the product due to aging, wear, loss, fatigue, etc. 3.7 Forward average current
The average value of the forward current in one cycle. 3.8 Heat sink (for power semiconductor devices) A ​​set of mechanical structures composed of heat sink, conductive terminals, fasteners and insulation (if any), which has the function of heat dissipation for power semiconductor devices.
4 Test purpose
When the intermittent rated forward average current is applied to the product and its junction temperature changes periodically according to the specified requirements, the electrical and mechanical thermal fatigue resistance performance of the product is evaluated.
Approved by the Ministry of Machinery and Electronics Industry on October 24, 1991 and implemented on October 1, 1992
5 Circuit Principle
The schematic diagram of the thermal cycle load test circuit is shown in Figure 1. Rwww.bzxz.net
JB/T5848--91
Figure 1 Thermal Cycle Load Test Circuit
—A low-voltage high-current transformer that provides heating current; R-a switch that turns on and off the heating current cycle, AD,
6 Number of Samplings
6.1 Durability Test
a gate self-triggering loop diode, Rc
voltage drop
a resistor that adjusts the heating current;
a DC ammeter;
a gate resistor; DUT-
the product under test.
Perform the sampling plan specified in Article 3.3 of GB4939 for identification test (Group D test) D2 and Article 3.3 of GB4940 for identification test (Group D test) D2.
6.2 Processability inspection or user requirement test
It can be carried out according to the requirements of the manufacturer or the delivery contract. 7 Test conditions
7.1 Test current
The test heating current waveform is a half-sine wave of the power frequency (conduction angle is 150°~180°), and its value is 90%~100% of the rated forward average current. 7.2 Junction temperature variation range
The upper limit of the product junction temperature during heating is the rated junction temperature T., and the lower limit is T1--2C℃. If the product is tested in series, the lower limit can be T--20℃: the lowest junction temperature during cooling should not be greater than 40℃. If testing large-capacity air-cooled devices, it can be less than 50℃. Note: If the test environment temperature is greater than 40°C, when the device under test is tested in series, the upper limit of the product junction temperature during the heating period is Tis, the lower limit is Tj=-20°C, and the minimum junction temperature during the cooling period should not exceed 50°C. 7.3. Heating and cooling time
It is usually stipulated that the heating time of the test product shall not exceed 6 minutes, and the cooling time shall not exceed 8 minutes (see Figure 2).
7.4 Number of cycles
The number of cycles adopts the sequence of 1, 2 or 5×10\, where n is a positive integer including 0. 184
JB/T5848-91
The welding devices of silicon rectifier diodes and thyristors are generally 1000 times, and the crimping type devices are 5000 times. It can also be carried out according to the provisions of the manufacturer or delivery contract. Note: If the test is interrupted due to various reasons, the test should be resumed within 24 as much as possible, and the number of test cycles can be calculated continuously. T,
8 Test equipment, instruments, and meters
Heating time
Once-circuited
Du Yisi
Relationship between the waveform of the added current of the test circuit and the waveform of the junction temperature change 8.1 The accuracy of the instrument for measuring thermal parameters should be 0.5 level, and the accuracy of other test instruments and meters should not be lower than 1.5 level. 8.2 Test protection measures
During the test, if the power-on heating time is out of control, there should be protection measures to limit the maximum temperature. During the test, if the cooling conditions are out of control, there should also be protection measures to avoid the junction temperature of the test product exceeding the specified value in the next cycle. 9 Failure criteria
9.1 After the test, the failure criteria for determining device failure are shown in Table 1. Table 1
Device category
Ordinary rectifier:)
Ordinary thyristor
Derived device 2)
Note, 1)
Upper limit value of USL specification,
To determine the failure electrical parameter
Rea (le)
, refer to the ordinary rectifier and ordinary quality tube in Table 1 to formulate the corresponding failure data. Failure criterion\)
>2×USL>1×USL
>1.5×USL
>2×SUL>1×USL
>2×USL or>1×USL
JB/T5848--91
9.2 After the test, the test piece shall be placed at room temperature for 2 hours before testing. All tests shall be completed within 96 hours. At the same time, it shall be noted that the electrical parameter tests shall be carried out in the order listed in Table 1 to avoid changes in the characteristics of the test device. 10 Test records and test reports
10.1 Test records
During the test, accurate and complete test records shall be made. For each test piece, relevant leakage current and peak voltage drop monitoring records shall be carried out according to the number of cycles or after failure occurs. When the power-on heating time is significantly reduced than the test setting value, the thermal resistance value shall be tested. When a device fails due to a test error (such as a test equipment failure or a measuring instrument failure or an operator error), the failure should be recorded in the test record and the reason should be stated.
10.2 Test report
The test report is a document that makes the final conclusion based on the test records and analysis after the test is completed. Its content shall comply with the requirements of Appendix A. 186
Manufacturing unit
Test date
Test conditions
Test port
Cumulative test time《3）
Failed product number
Product model and specification
Failure occurrence time
Cumulative failure
Test conclusion and recommended measures
Person in charge of the test:
JB/T5848-91
Appendix A
Hot Thermal load test report form
(supplement)
Thermal load test report form
Batch number
Production period
Test standard, program and other file names, code characteristics
Before test
VruRataouTau
Test equipment, receiver failure time
Test unit:
Additional instructions:
This standard is proposed and managed by Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. This standard is drafted by Xi'an Power Electronics Technology Research Institute of the Ministry of Machinery and Electronics Industry. The main drafters of this standard are Wang Menglong and Xuemin. u
Number of tests
Failure criteria
Current situation
Current situation
Maintenance personnel
People's Republic of China
Mechanical industry standards
Power semiconductor devices
And semiconductor power converters
Edited and published by the Standardization Research Office of the First Equipment Department of the Mechanical and Electronic Industry Ministry of Machinery and Electronics Industry and the Mechanical Standardization Research Institute of the Ministry of Machinery and Electronics Industry
(No. 302, Xiashesi Street, Xiangtan, Hunan)
Printed by Xiangtan University Printing Factory
Book size 880×1230
Word count 346000
First edition in July 1993
First printing in July 1993
Print run 1-700
Print number
Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.