This standard gives the standards for the following types or categories of devices: rectifier diodes, including - avalanche rectifier diodes; - controlled avalanche rectifier diodes; - fast switching rectifier diodes. ?? GB/T 4023-1997 Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes GB/T4023-1997 Standard download decompression password: www.bzxz.net

GB/T4023—1997
The national standard GB4023-86 "Semiconductor components Part 2: Rectifier diodes" was formulated in the mid-1980s based on the industrial technological level and actual needs of use at that time. It equivalently adopted some contents of IEC747-2 (1983) "Semiconductor devices discrete devices and integrated circuits Part 2: Rectifier diodes" and the relevant parts of the IEC747-1 (1983) "General principles for semiconductor devices" cited by it. In addition, according to my country's national conditions, the (fast) test method of "transient thermal impedance" is added. With the development of science and technology and the progress of production technology, the domestic situation has changed to varying degrees in the past decade. The International Commission has also revised IEC747-2 twice. For this reason, this standard is equivalent to the entire technical content of 1EC747-2:1983 Semiconductor Devices Discrete Devices and Integrated Circuits Part 2: Rectifier Diodes" and 1952.1993. In this way, by making our standards as consistent or equivalent as possible with international standards, we can adapt to the needs of international trade, technical and economic exchanges and the development of international standards as soon as possible. This standard applies to the requirements, parameter tests, and acceptance and reliability requirements of rectifiers. When citing this standard, the relevant specific requirements should be specified in the corresponding detailed specifications. Appendix A and Appendix B of this standard are prompt appendices. This standard is proposed by the Ministry of Electronics Industry of the People's Republic of China and is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee. This standard is under the responsibility of China Zhenhua Jiyong Optoelectronics and Xi'an Power Electronics Technology Research Institute. The main drafters of this standard are Wang Jihong, Yang Zijiang, Qin Xianman and Zou Shengdi. GB/T4023—1997
IEC Preface
This standard was prepared by the 47th Technical Committee of the International Working Committee (Flat Conductor Discrete Devices and Integrated Circuits). IEC747-2 constitutes the second part of the IEC747 general standard for flat conductor devices. In addition to the IEC7471 general standard, the various standards given in this standard make the standards for rectifiers more complete. At the 47th Technical Committee meeting held in London in September 1932, a proposal to adapt IEC147 and IEC148 standards into the current form of device coding was approved. Since all components have been approved in advance according to the "six-month method" or "two-month procedure", no new vote is required. The content related to integrated circuits that previously appeared in IEC147 and IEC148 will now be included in IEC748. Previously, the relevant mechanical climate test methods in IEC1147-5A were included in IEC1147-3 and IEC147-5A. Now they will be included in IFC749. As Technical Committee 47 continues to work and takes note of advances in the field of single-conductor devices, this standard will be brought up to date through revision and expansion. IEC Foreword bzxZ.net
1) (International Self-Committee) Formal resolutions or agreements on technical issues are made by technical committees to which National Committees have a special interest, and represent as nearly as possible the international consensus on the issues involved. 2) These resolutions or agreements are made available to the international community in the form of recommended standards and are recognized by the National Committees in this sense. 3) In order to promote international unification, IEC hopes that the National Committees will adopt the text of IEC standards as their national standards where national conditions permit. Differences between IEC standards and corresponding national standards should be indicated in the national standards as far as possible. National Standard of the People's Republic of China
Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes
Semiconductor devices Discrete dewices ... diodes
Part I General
1 Introduction
GB/T4023—1997
cqv IEC 747-2:1983
Replaces GB2023—R
Generally, this standard is to be used together with IEC:747-1--. This standard covers all the following basic information: Technical
Text symbols:
Basic ratings and characteristics:
--Test methods;
--Acceptance and acceptability.
2 Scope
This standard gives the following types or categories of components: Rectifier 1. The diodes include
avalanche diodes;
a controlled short-term rectifier diode:
a fast switching rectifier diode.
3. Marking of rectifier diodes
Each rectifier diode must be clearly and firmly printed with the following markings: Manufacturer's name or trademark:
a mark of the manufacturer or supplier
a mark to distinguish the anode end and the cathode end.
The serial number of this standard is the same as that of IEC: 747-1 Part I 2.1 Consistent with Part I Terms and Symbols
1 General Terms
1.1 Forward Direction
Direction in which direct current flows along the lower voltage of a semiconductor diode. Reversed Direction
Approved by the State Administration of Technical Supervision on October 7, 1997 and implemented on September 1, 1998
GB/T 40231997
Direction in which direct current flows along the higher voltage of a semiconductor diode. 1.3 Anode Terminal (of a rectifier diode or rectifier stack)
The terminal into which positive current flows from an external circuit. 1.4 Cathode terminal (of semiconductor rectifier, diode or rectifier stack)
The end of the external circuit through which the forward current flows.
1.5 Rectifier stack arm Reclifier stack 2RM is defined by the two ends of the circuit, and is basically the part of the rectifier stack through which the current flows in only one direction. Note: A rectifier stack is a circuit consisting of one or more rectifier diodes connected in parallel or parallel, that is, a rectifier can be one part or the whole of a rectifier stack
2 Terms about ratings and characteristics
Note: When in the literature of the company, the most common view is given here). 2.1 Voltage
2.1.1 Forward voltage forward voltagc The voltage generated at both ends of the device when the current is flowing in the positive direction. 2.1.2 Reading voltage (V) thrcsholdvoliage The intersection of the straight line used in the line approximation method of the positive question curve and the positive axis of the electric field is determined by the stop value. 2.1.3 Positive recovery voltage
Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.