Some standard content:
National Standard of the People's Republic of China
Synthetic quartz crystal
This standard is equivalent to the international standard 1E:753(1993)"Synthetic quartz crystal" 1 Subject content and scope of application
GB/T3352-94
Replaces GB335282
1.1 This standard specifies the terms and definitions, technical requirements, inspection methods, inspection rules and marking, packaging, transportation and storage of synthetic quartz crystal.
1.2 This standard applies to artificial quartz crystals used to make piezoelectric elements for frequency control and selection. 2 Reference standards
GB 191 Pictorial symbols for packaging, storage and transportation
GB2828 Sampling procedures and sampling tables for batch inspection (applicable to inspection of continuous batches) SJ/29152.1 Quartz crystal elements for frequency control and selection Part 1: Standard values and test conditions 3 Terms and definitions
3.1 Hydrothermal crystal growth The growth of artificial quartz crystals is carried out in an autoclave filled with alkaline solution at high temperature (330℃～100℃) and pressure (80MPa～200MPa): The autoclave is divided into two areas: the higher temperature dissolution area is filled with raw quartz fragments, and the lower overflow growth area is filled with cut seed crystals.
3.2 Synthetic quartz α-quartz crystal grown by hydrothermal method can be either left-handed or right-handed. 3.3 seed
a crystal nucleus for crystal growth, with a rectangular cross section of a wafer or a crystal bar. 3.4 growth zone
a region of a synthetic quartz crystal growing along different directions, see Figure! 3.5 orientation of a synthetic quartz crystal orientation of a seed crystal in rectangular coordinates as specified in 3.6. 3.6 definition of the orthographic coordinate system and crystal planes of a quartz crystal The rectangular coordinate system and crystal planes of a quartz crystal are shown in Figure 2. Note: a z-cut seed crystal can be oriented at an angle less than 20° to the axis, in which case the reference system is X, Y', 2' 3.7 dimensions
dimensions of a crystal grown on a z-cut seed crystal with an angle less than 20° to the Y axis. 3.7.1 Gross dimensions The maximum size of the crystal measured along the X, Y or Y' and Z' axes. 3.8 Inclusions
Approved by the State Administration of Technical Supervision on December 31, 1994
Implemented on August 1, 1995
GB/T 3352-94
Observe the visible foreign matter in the artificial quartz crystal by scattering light from the light source by immersing the crystal in a liquid with a matching refractive index. The most common inclusion is conodonite.
3.B.1 Seedveil
A layer of inclusions arranged on the surface of the seed crystal of the grown crystal. 3.9 Dopant
A dopant used to improve the crystal habit, physical or electrical properties of the artificial quartz crystal during the growth process. 3.10 Pre-dimensioned bar The original crystal is cut and ground to make it a crystal of the required specific size. 3.11 Impurity concentration The number of atoms of impurities in every 105 silicon raw materials. 3.12 Dislocations
Linear defects in the crystal body caused by the displacement of atomic planes. 3.13 Etch channel
Dislocations decorated by impurities in the crystal, and etch grooves formed under certain etching conditions. S area
Cutting of the axis
Explanation of 2 and 2#
Large x-axis
Surface perpendicular to the x-axis
d. 2…Description
Figure 1 Ideal cross section of artificial quartz crystal grown on z-cut seed crystal Y axis
z (small rhombus) plane
Levorotatory quartz
Under dimensional polarimeter: contraction ring
CB/T 3352-94
T Large rhombus
Small desert
Cut seed crystal
(Moon mirror rotates clockwise)
Under polarimeter, analyzer rotates counterclockwise
Rotation cut Xuan crystal
Right panic quartz
Saint divergence ring
Z (small rhombus) rain
(Eyepiece rotates clockwise)
Analyzer rotates clockwise
Figure 2 Names of axes and faces of quartz crystal
4 Technical requirements
4.1 Dimensions of artificial quartz crystal
The dimensions of artificial quartz body shall be in accordance with the agreement between the manufacturer and the user. 4.1.1 The dimensions along the Y or Y\ axis (see Figure 1d) shall meet the requirements. 4.1.2 The dimensions of Zr or Z (see Figure 1c) Zm or Zm (see Figure 1d) along the Z or Z axis shall comply with the regulations. 4.1.3 The dimensions along the axis shall comply with the regulations (see Figure 1e). 4.2 Defects
4.2.1 Twins
GB/T3352—94
In the area applicable to the manufacture of quartz crystal components, there shall be no electrical twins and optical twins. 4.2.2 Cracks and fractures
In the area applicable to the manufacture of quartz crystal components, there shall be no cracks and fractures. 4.3 Inclusion density
The average density of inclusions usually refers to the Z area. The inclusion level of artificial quartz crystals shall comply with the requirements of Table 1. Users can select the required level within the applicable inclusion size range. Table 1
Size
4.4 Infrared quality index
The α value of artificial quartz crystal shall meet the requirements of Table 2 Level
Maximum value
30--70
(excluding 30)
pieces/cm
70-100
(excluding 70)
Minimum value
Q(X 10)
Note: ① These Q values are obtained from the internal measured α values and empirical relationships used before 1987. The previous classification methods are listed here, mainly to maintain their continuity through the use of α classification. The α value is a physical measurement value used to control and specify the quality of artificial quartz crystal. ② In order to ensure the measurement of a, an infrared spectrophotometer with sufficient resolution for the αs6s absorption peak and a low noise level must be used. ③ In order to accurately measure "a", an infrared spectrophotometer calibrated with accurate wavenumber must be used. 4.5 Corrosion tunnel density (p) (with timing) The corrosion tunnel density per square centimeter of the 7th zone of the artificial quartz crystal shall meet the requirements of Table 3. 4.6 Frequency-temperature characteristics
The frequency-temperature characteristics of artificial quartz products (see Figure 4) are determined by the relative change value of the frequency measured at 15r and 35℃ relative to the series oscillation frequency at 25℃. The relative change value of the frequency shall meet the following requirements: 15℃: The relative change value of the frequency is +(0.5～1.5)×10-, 35: The relative change value of the frequency is (0.51.5)×10-5; 5 Inspection method
5.1 Marking (see 7.1)
GB/T3352-94
Monthly inspection, the marking should be complete, correctly clear, and meet the requirements of 7.1 Requirements. 5.2 The size of artificial quartz crystal (see 4.1) is measured with a vernier caliper with an accuracy of 0.02mm and a steel ruler with an accuracy of 0.1mm. 5.3 Defects (see 4.2)
5.3.1 Twins (see 4.2.1)
Inspect the twin characteristics of the surface of artificial quartz crystals daily under natural light conditions. 5.3.2 Cracks and fractures (see 4.2.2)
Visually inspect the fractures and cracks of artificial quartz crystals under 10DW incandescent light. 5.4 Inclusion density (see 4.3)
5. 4. 1 Method 1
lines/cm*, not more than
Apply a liquid (about n=1.55), visually inspect the distribution of inclusions under an incandescent lamp of 100W or above, and select the area with more inclusions (usually the Z growth area shown in Figure 3). After selecting the area, observe the size and number of inclusions under the light, and calculate the average number of four sizes of inclusions per cubic centimeter according to the requirements of Table 1. Z zone
AT sample (upright F)
Intersection of the western steaming surface
Position of the crystal slice used to measure the Q value
(Take the right-handed quartz with 0 degree rotation as an example)
Large x zone
Figure 3 Typical examples of cut wafers from zone 7, AT\ cut and X slice grown from artificial quartz crystal
Small x zone
Large S zone
2 Method 2
GB/T3352—94
Large zone
bx slice position
Continued Figure 3
The density of inclusions within the specified range of the crystal is measured using a stereoscopic double-slice microscope with a magnification of 30 to 4D times and a heliostat scale. Draw a 10mmX×10mm grid on the crystal, or use a plexiglass sheet with grids as the bottom plate, and place the Y rod with the X side facing up on the microscope workbench with a black background. Under strong light, slowly lower the microscope to the grid to measure the inclusions. Except for the area within 1mm from the crystal surface and within 1mm from the seed surface. Use this method to scan and observe until the inclusions in all grids are measured. Calculate the total number of inclusions in the demarcated grids, divide it by the number of grids, and then calculate the average number of inclusions of four sizes per cubic centimeter. 5.5 Infrared quality index (see 4.4)
Scan the Y slice with infrared light of one or more wave numbers of 3500, 3585 or 3410, and measure the absolute value of the difference in absorption logarithm per centimeter between the selected wave number and the background wave number to obtain the infrared α value. When using a single-beam instrument, use 3800cm\1 or 3979cm-1 for the background. Because the α value in a crystal often varies with the position of the entire crystal in the 2-axis direction, the user can explicitly choose to measure the distribution of its α value in the Z growth zone of the sample in the measurement of the selected sample. Usually, the average value of α in the Z growth zone of the crystal can be selected, or the maximum value in the Z growth zone can be selected (in the worst case, the maximum α value is measured). 5.5.1 Preparation of Y slices
The artificial quartz crystal used as the sample is fixed on the substrate and then cut with a quartz cutting device. At least one F slice is cut, and its thickness should be within the range of 5.0~10.0 mm after grinding and polishing. For materials with high α values, the appropriate thickness is 5.0 mm, which can distinguish the change of α value. For materials with medium α values, medium thickness is selected. For materials with extremely low α values, a thickness of 10 mm is more appropriate, so that its smaller absorption can be measured. After cutting, the two large faces should be ground, first with a uniformly mixed 25μm abrasive grinding liquid, and then with a uniformly mixed 3um abrasive dew. Further polishing is optional, and quartz with low α values should be polished. 5.5.2 Calibration of Standard Y-Way in Infrared Spectrophotometer Turn on the power, turn on the infrared spectrophotometer, preheat and calibrate after reaching full stability. Daily calibration includes setting the limit of transmittance (0~100% or absorption (1gT=1.0～0), the speed of the drawing and the synchronization of scanning with the sample. For evaluation and general purpose measurements, there is a 2mm wide diaphragm on the optical path of the sample. For measurements of lower a values, the diaphragm width can be relaxed. The diaphragm height should not exceed the X dimension of the seed crystal or 5.0 mm. Place a polished standard Y slice reference piece on the sample holder and then put it into the scanning device. Control the wave number at the background set point (outside the OH absorption band, but close to it), usually (3800 ± 3) cm-1, and then move the standard sample at a certain wave number to pass through the beam at a speed synchronized with the drawing. This scan is performed only in the Z growth zone of the Y slice. In some cases, when background noise is a problem, such as using a single-beam instrument, a higher background wave number (3979 ± 3) cm1 can also be used to reduce background noise. If the background scan line cannot pass through the area outside the original seed crystal fairly straight, a layer of fluorocarbon lubricant should be applied to both sides of the semi-polished Y slice. During the background scan, the change in the background line should not exceed 0.2 absorption units. When the sample has completely passed the background scan, adjust the wave number to the selected 3410, 3500, (3585 ± 3) cm-. Put the sample back to its original GB/T 3352—94
position, and return the drawing to the position where the scan started. Then draw the infrared absorption curve of the selected sample. The correction value of α value (maximum and minimum value) can be calculated from this reference scan. The formula used is: IIgT 3585 IgT sa0l
thickness of the slice (cm)
where "--- infrared transmittance of the sample. Note: (D 3 585 cm wave number can also be selected as 3 410 cm or a 500 cm②3800m- wave number can also be selected 3979em-
If the repeatability of the maximum and minimum readings of the infrared spectrophotometer α is within ±0.0004 units of the standard value, the calibration of the instrument is considered to be qualified. If necessary, the instrument can be calibrated to the recognized value for the reading of the standard sample. 5.5.3 Measurement of Y slices
After calibration, scan each prepared (preferably polished) slice to be tested at the background and the selected OH absorption band wave number. A thin layer of oil needs to be applied to the semi-polished slice. Use the formula in 5.5.2 to calculate its a value. The area within 2.0mm from the center of the seed crystal and the growth area of the rod that exceeds the predetermined size are not included in the test range. 5 .6 Corrosion tunnel density p (see 4.5)
Corrosion tunnel density is measured by counting the corrosion tunnels on the AT slice of the sample quartz body using a binocular microscope. 5.6.1 Preparation of AT slices
Cut a quartz crystal slice with a thickness of 7.0mm and a diameter of 435*15°±60 from the artificial quartz crystal sample. Grind a V-shaped notch on the edge of the X-axis surface as a mark. Grind the right quartz slice with W28 white corundum abrasive on a grinder, grind 0.35mm, grind 0.1mm with W10 white corundum abrasive, grind 0.1mm with W5 white corundum abrasive, and then grind 0.05mm with W3.5 white corundum abrasive. The final thickness of the quartz crystal slice is 6.4mm. The ground quartz crystal slice should be cleaned with detergent. 5.6.2 Corrosion of AT slices
In the fume hood, take necessary safety protection measures (including skirt, gloves, glasses, splash shield, etc.). Place the excess ammonium bifluoride (NH,HF2) in a suitable container with deionized water and saturate the solution at 75 ± 2°C. Use a constant temperature water bath to keep the ammonium bifluoride solution at 75 ± 2°C and monitor the temperature with a thermometer covered with polytetrafluoroethylene film. Place the AT slice on a polytetrafluoroethylene sample holder and immerse it in the saturated ammonium bifluoride solution. Stir the solution with a polytetrafluoroethylene rod or move the sample at a speed of 25mm/s. The etching time is about 4h. The etching thickness is 0.10mm. After the etching is completed, use a tweezer covered with polytetrafluoroethylene film to remove the AT slice from the etching solution, rinse it with alkaline water, and then clean it with cleaning solution and water. 5.6.3 Etching tunnel and counting
Use a pencil to draw a 0.25cm×0.25cm or 0.5cmX0.5cm grid in the z growth zone of the AT slice. The grid is located in the rectangular part of the z zone that is consistent with the seed crystal height. The grids within 2mm from the center line of the seed crystal should not be counted. Use a double-simple microscope with a magnification of 30 times to 4 times to measure each piece, and shine strong light from the X-plane direction during observation. Adjust the focus of the microscope, count and record the number of corrosion tunnels in each grid. Then count the number of grids in all grids, calculate the average, and then multiply it by the number of grids per square centimeter (16 for 0.25cm×0.25cm, 4 for C,5cmX0,5cm, etc.), and you will get the number of corrosion tunnels per square centimeter.
5.7 Frequency-temperature characteristics (see 4.6)
The technical requirements for quartz crystal components used to evaluate frequency-temperature characteristics are as follows: Frequency
Sample position
Chip shape
Chip side area
Electrode diameter
Return frequency
10 MHz±10 kHz (fundamental frequency);
AT cut.35°13±0.5°
Square with one side as the axis:
8mmx8mtat
70*2kHz;
Electrode material
Support point
Final surface processing
Surface flatness
Surface parallelism
Silver or gold,
at two diagonal points;
GB/T 3352:94
Grind (average abrasive particle size less than 3μm) and then etch 200kHz. When irradiated with monochromatic light through optical flat glass and detected in a circular area of 6mm diameter, the product of the curvature of the downward-involved fringe and the frequency in MHz should not exceed 5 if measured with yellow light: it should not exceed 6 if measured with green light.
The parallelism of the two sides of the sheet should be within 10\. In dry nitrogen, sealed under the temperature and pressure conditions of standard atmosphere. Measure according to the provisions of SJ/Z9152.1, and the minimum and maximum slopes of the frequency-temperature characteristics should be indicated (see Figure 4). 5.8 Packaging inspection (see 7.2)
According to the GB2828 single sampling plan, the special inspection level is S4, the AQL is 2.5-
,
Figure 4 The slope of the frequency characteristics of the sample
6 Inspection rules
6.1 The inspection of artificial quartz crystals is divided into batch inspection and periodic inspection. 6.2 Batch inspection
Batch inspection consists of group A and group B inspection. 6.2.1 Inspection batch
Each inspection batch shall consist of artificial quartz products of the same type and specification submitted at the same time. 6.2.2 Group A inspection (non-destructive)
Group A inspection shall consist of the inspection specified in Table 4. 6.2.2. 1 Sampling plan and criterion
Statistical sampling and inspection methods shall comply with the GB 2828 single sampling plan, and the general inspection level is I. The qualified quality level AQL is shown in Table 4. If there is a dispute over the inspection of the wound, the inspection in 5.4.2 shall apply. 6.2.2.2 Failure
If an inspection lot fails, the lot shall be returned, the unqualified products shall be removed and submitted for inspection again. These lots shall be separated from the new lot and clearly marked as re-inspection lots. Inspection Items
Cracks and fractures
Inclusion density
6.2.3 Group B inspection (destructive)
Requirement number
Group B inspection shall consist of the inspections specified in Table 5. 6.2.3.1 Inspection sample change criteria
GB/T 3352--94
Test method number
Group B inspection can be randomly selected from the samples that have passed the Group A inspection. The number of samples and the number of allowed unqualified products are shown in Table 5. Table 5
Inspection Items
Infrared Quality Index
Corrosion Test Penetration
6.2.3.2 Unqualified
Requirement No.
Test Method Tea No.
Sample Size (Strip, Block)
2(≤100kg/batch)
4(>100kg/batch)
10 Pieces (taken from 2 sample units)
Number of Unqualified Products Allowed
If a certain inspection batch fails, the batch shall be re-inspected strictly, and the samples shall be doubled. The number of unqualified products allowed shall meet the requirements of Table 5. 6.3 Periodic Inspection
The period of periodic inspection shall not exceed three years in general. 6.3.1 The periodic inspection consists of the inspections specified in Table 6. 6.3.2 Inspection samples and criteria
The samples for periodic inspection shall be randomly selected from the batches that have passed the batch inspection. The samples for periodic inspection shall pass the inspections of Group A and Group B. The sample size and the number of unqualified products allowed are shown in Table 6. Table 6
Inspection items
Title Frequency-temperature characteristics
Requirement Article 20
Test method Article number
Sample size [strips and blocks]
Note: If 10 quartz crystal components are made from each strip (or block) sample, and the qualified rate is not less than 60%, then the sample unit is qualified. Marking, packaging, transportation and storage
7.1 Marking
On the Y surface or corresponding plane of each artificial quartz crystal, the following should be clearly marked: manufacturer name or trademark;
Product model:
Optical rotation: right-handed RH or left-handed LH;
Production date and batch number.
7.2 Packaging
Number of unqualified products allowed
GB/T3352—94
Artificial quartz crystals should be packed in foam plastic packaging boxes with rectangular grid grooves. The packaging boxes containing artificial quartz crystals should be placed in dry packaging boxes. If there are test sheets, they should also be placed in the boxes. The pendants in the box should be lined with plastic film, and the gaps in the box should be filled with packaging materials. The box should contain a certificate of conformity and a packing list, which should indicate: manufacturer name and trademark, product name and model, product quantity, standard number, name or code of the packer, date of packing, and seal of the quality inspection department. The weight of each package shall not exceed 20 kg. Each package shall be marked with words or graphics such as "handle with care" and "do not invert" in accordance with GB 191. 7.3 Transportation Packages containing artificial quartz crystals may be transported in any manner, but should be protected from direct rain and snow and strong impact during transportation. 7.4 Storage Artificial quartz crystals should be stored in a warehouse with an ambient temperature of 10~40C, a relative condensation of no more than 80%, and no acidic, alkaline or other harmful gases, mechanical vibration or impact in the surrounding environment. A1 Seed Orientation
GB/T 3352—94
Appendix A
Requirements for Seed Crystals for Artificial Quartz Solid Growth
(Reference)
The orientation of seed crystals is Z0° cut, rhombus cut, Z+2° cut, Z+5° cut and Z+8.5\ cut. The 7° axis of the latter three seed crystals is rotated as shown in Figure 2.
A2 Seed Crystal Dimensions
A2.1Z or Z-direction Dimensions
Unless otherwise specified, the ? or L dimension (i.e. thickness) of the z-cut or rotated z-cut seed product should be less than 3 mm. X-direction Dimensions
The ? or L dimension (i.e. thickness) of the seed crystal should comply with the regulations.
Optical Rotation
The optical rotation of the seed crystal should be specified, and whether it is left-handed or right-handed (see Figure 2). Additional Notes:
This standard was proposed by the Ministry of Electronics Industry of the People's Republic of China. This standard is under the jurisdiction of the Standardization Institute of the Ministry of Electronics Industry. This standard was drafted by the Standardization Institute of the Ministry of Electronics Industry, the Seventh Factory and the Zhejiang Crystal Factory. The main drafters of this standard are Jing Hezhen, Liu Chengjun, Zhang Yi, Xie Zizhen and Fen Shu. This standard was first issued in December 1982.2 Unqualifiedbzxz.net
Requirement number
Test method Tea number
Sample size (strips, blocks)
2(≤100kg/batch)
4(>100kg/batch)
10 pieces (taken from 2 sample units)
Number of unqualified products allowed
If a certain inspection batch fails, the batch shall be re-inspected strictly, and the samples shall be doubled. The number of unqualified products allowed shall meet the requirements of Table 5. 6.3 Periodic inspection
The period of periodic inspection shall generally not exceed three years. 6.3.1 Periodic inspection consists of the inspections specified in Table 6. 6.3.2 Inspection samples and criteria
Samples for periodic inspection shall be randomly selected from batches that have passed the batch inspection. Samples for periodic inspection shall pass the inspections of Group A and Group B. See Table 6 for sample size and number of unqualified products allowed. Table 6
Test Item
Topic Frequency Temperature Characteristics
Requirement Item 20
Test Method Item Number
Sample Size [Strip)
Note: 10 quartz crystal components are made from each strip (or block) sample, and the qualified rate is not less than 60%, then the sample unit is qualified. Marking Packaging, Transportation, Storage
7.1 Marking
The following should be clearly marked on the Y surface or corresponding plane of each artificial stone crystal: manufacturer name or trademark;
Product model:
Optical rotation: right-handed RH or left-handed LH;
Production date and batch number.
7.2 Packaging
Number of unqualified products allowed
GB/T3352—94
Artificial quartz crystals should be packed in foam plastic packaging boxes with rectangular slots. The packaging boxes containing artificial quartz crystals should be packed in dry packaging boxes. If there is a test sheet, it should also be placed in the box. The box should be lined with plastic film, and the gaps in the box should be filled with packaging materials. There should be a certificate of conformity and a packing list in the box. The packing list should indicate: manufacturer name and trademark
product name and model;
product quantity,
this standard number:
name or code of the packer;
packing date:
stamp of the quality inspection department.
The weight of each packaging box shall not exceed 20 kg. Each packaging box shall be marked with words or graphics such as "handle with care" and "do not turn upside down" in accordance with GB 191.
7.3 Transportation
The packaging boxes containing artificial quartz crystals are allowed to be transported in any way. During transportation, they should avoid direct rain and snow and strong collision. 7.4 Storage
Artificial quartz crystals should be stored in a warehouse with an ambient temperature of 10~40C, a relative solidification degree of no more than 80%, no acidic, alkaline or other harmful gases in the surrounding environment, and no mechanical vibration and impact. A1 Seed Orientation
GB/T 3352—94
Appendix A
Requirements for Seed Crystals for Artificial Quartz Crystal Growth
(Reference)
The orientation of seed crystals is Z0° cut, rhombus (r) cut, Z+2° cut, Z+5° cut and Z+8.5\ cut. The 7° axis of the latter three seed crystals and their rotation are shown in Figure 2.
A2 Seed crystal dimensions
A2.1 Z or Z-direction dimensions
Unless otherwise specified, the ? or L dimension (i.e. thickness) of z-cut or rotated z-cut seeds shall be less than 3 mm. X-direction dimensions
The X-direction dimensions of seed crystals shall comply with the regulations.
Optical rotation
The optical rotation of seed crystals shall be specified, and whether it is left-handed or right-handed (see Figure 2). Additional notes:
This standard was proposed by the Ministry of Electronics Industry of the People's Republic of China. This standard is under the jurisdiction of the Standardization Institute of the Ministry of Electronics Industry. This standard was drafted by the Standardization Institute of the Ministry of Electronics Industry, the Seventh Factory and the Zhejiang Crystal Factory. The main drafters of this standard are Jing Hezhen, Liu Chengjun, Zhang Yi, Xie Zizhen and Fen Shu. This standard was first issued in December 1982.2 Unqualified
Requirement number
Test method Tea number
Sample size (strips, blocks)
2(≤100kg/batch)
4(>100kg/batch)
10 pieces (taken from 2 sample units)
Number of unqualified products allowed
If a certain inspection batch fails, the batch shall be re-inspected strictly, and the samples shall be doubled. The number of unqualified products allowed shall meet the requirements of Table 5. 6.3 Periodic inspection
The period of periodic inspection shall generally not exceed three years. 6.3.1 Periodic inspection consists of the inspections specified in Table 6. 6.3.2 Inspection samples and criteria
Samples for periodic inspection shall be randomly selected from batches that have passed the batch inspection. Samples for periodic inspection shall pass the inspections of Group A and Group B. See Table 6 for sample size and number of unqualified products allowed. Table 6
Test Item
Topic Frequency Temperature Characteristics
Requirement Item 20
Test Method Item Number
Sample Size [Strip)
Note: 10 quartz crystal components are made from each strip (or block) sample, and the qualified rate is not less than 60%, then the sample unit is qualified. Marking Packaging, Transportation, Storage
7.1 Marking
The following should be clearly marked on the Y surface or corresponding plane of each artificial stone crystal: manufacturer name or trademark;
Product model:
Optical rotation: right-handed RH or left-handed LH;
Production date and batch number.
7.2 Packaging
Number of unqualified products allowed
GB/T3352—94
Artificial quartz crystals should be packed in foam plastic packaging boxes with rectangular slots. The packaging boxes containing artificial quartz crystals should be packed in dry packaging boxes. If there is a test sheet, it should also be placed in the box. The box should be lined with plastic film, and the gaps in the box should be filled with packaging materials. There should be a certificate of conformity and a packing list in the box. The packing list should indicate: manufacturer name and trademark
product name and model;
product quantity,
this standard number:
name or code of the packer;
packing date:
stamp of the quality inspection department.
The weight of each packaging box shall not exceed 20 kg. Each packaging box shall be marked with words or graphics such as "handle with care" and "do not turn upside down" in accordance with GB 191.
7.3 Transportation
The packaging boxes containing artificial quartz crystals are allowed to be transported in any way. During transportation, they should avoid direct rain and snow and strong collision. 7.4 Storage
Artificial quartz crystals should be stored in a warehouse with an ambient temperature of 10~40C, a relative solidification degree of no more than 80%, no acidic, alkaline or other harmful gases in the surrounding environment, and no mechanical vibration and impact. A1 Seed Orientation
GB/T 3352—94
Appendix A
Requirements for Seed Crystals for Artificial Quartz Crystal Growth
(Reference)
The orientation of seed crystals is Z0° cut, rhombus (r) cut, Z+2° cut, Z+5° cut and Z+8.5\ cut. The 7° axis of the latter three seed crystals and their rotation are shown in Figure 2.
A2 Seed crystal dimensions
A2.1 Z or Z-direction dimensions
Unless otherwise specified, the ? or L dimension (i.e. thickness) of z-cut or rotated z-cut seeds shall be less than 3 mm. X-direction dimensions
The X-direction dimensions of seed crystals shall comply with the regulations.
Optical rotation
The optical rotation of seed crystals shall be specified, and whether it is left-handed or right-handed (see Figure 2). Additional notes:
This standard was proposed by the Ministry of Electronics Industry of the People's Republic of China. This standard is under the jurisdiction of the Standardization Institute of the Ministry of Electronics Industry. This standard was drafted by the Standardization Institute of the Ministry of Electronics Industry, the Seventh Factory and the Zhejiang Crystal Factory. The main drafters of this standard are Jing Hezhen, Liu Chengjun, Zhang Yi, Xie Zizhen and Fen Shu. This standard was first issued in December 1982.
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