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GB/T 15529-1995 Blank Detailed Specification for Semiconductor Light Emitting Digital Tubes

Basic Information

Standard ID: GB/T 15529-1995

Standard Name: Blank Detailed Specification for Semiconductor Light Emitting Digital Tubes

Chinese Name: 半导体发光数码管空白详细规范

Standard category:National Standard (GB)

state:in force

Date of Release1995-04-06

Date of Implementation:1995-01-01

standard classification number

Standard ICS number:Electronics>>Semiconductor devices>>31.080.99 Other semiconductor devices

Standard Classification Number:Electronic Components and Information Technology>>Semiconductor Discrete Devices>>L45 Microwave and Millimeter Wave Diodes and Transistors

associated standards

alternative situation:void;

Publication information

publishing house:China Standards Press

other information

Release date:1995-04-06

Review date:2004-10-14

Drafting unit:Suzhou Semiconductor Factory

Focal point unit:Ministry of Information Industry (Electronics)

Publishing department:State Bureau of Technical Supervision

competent authority:Ministry of Information Industry (Electronics)

Introduction to standards:

This blank detailed specification stipulates the basic principles for the formulation of semiconductor light-emitting digital tube detailed specifications. All detailed specifications within the scope of this specification should be consistent with this blank detailed specification as much as possible. GB/T 15529-1995 Blank Detailed Specification for Semiconductor Light-emitting Digital Tubes GB/T15529-1995 Standard download decompression password: www.bzxz.net

Some standard content:

National Standard of the People's Republic of China
Blank Detail Specification for LED Numeric Displays GB/T15529-1995
This blank detailed specification sets out the basic principles for developing detailed specifications for LED numeric displays. All detailed specifications within the scope of this specification shall be developed in accordance with this blank detailed specification as far as possible. This standard is one of a series of blank detailed specifications related to GB4589.1 "Semiconductor Devices: General Specification for Devices and Integrated Circuits" and GB12565 "Sectional Specification for Semiconductor Devices and Optoelectronic Devices". Required Information:
The following required items shall be included in the corresponding blanks specified on the first page. Identification of the Detailed Specification:
(1) Name of the national body authorized to issue the detailed specification. (2) IECQ Detailed Specification Number,
(3) General Specification and Detailed Specification Number.
(4) Detailed Specification Number, Date of Issue and any further information required by the national system. Identification of the Device:
(5) A brief description of the device type.
(6)Typical structure and application data.
If a device is designed to meet several applications, this should be clearly stated in the detailed specification. Its application characteristics, limit values ​​and inspection requirements should all be met.
(7)Appearance drawing and (or) reference to relevant appearance standards. (8)Quality assessment category.
(9)Reference data of the most important characteristics that can be compared between device models. [In the entire blank detailed specification, the content given in square brackets is only used to guide the formulation of detailed specifications and is not included in the detailed specifications.
[In the \value\ column of the limit value and characteristic, "×\ indicates the specific value that should be given in the detailed specification,] Approved by the State Administration of Technical Supervision on April 6, 1995 and implemented on November 1, 1995
[Name of the national organization authorized to issue detailed specifications] Basis for evaluating device quality:
GB/T15529—1995
GB4589.1 Semiconductor devices
Discrete devices and integrated circuits||tt| |General Specification for Circuits
GB12565 "Sectional Specification for Semiconductor Devices and Optoelectronic Devices" [Device Model]
Ordering Information: See Chapter 7 of this specification
1 Mechanical Description
Appearance Standard:
[IECQ Detailed Specification Number]
[Detailed Specification Number and Release Date
If the detailed specification number is repeated with the TECQ number, this column may not be used
(7) 2
SI2684 & Appearance Dimensions of Semiconductor Light Emitting (Visible Light) Devices
Appearance Drawing and Electrical Schematic Diagram and Terminal Identification: [Can be found in Chapter 10 Chapter gives more details] Marking benefits:
According to Article 2.5 of GB4589.1 or Chapter 6 of this specification, the detailed specification shall specify the minimum items to be marked on the device
Brief description
Material:
Packaging: Unsealed or non-unsealed
Purpose:
3 Quality assessment category
[According to Article 2.6 of GB4589.1]
Reference data:
The information of the relevant manufacturing units of the devices qualified according to this specification can be found in the column of current qualified products (6)
4 Limit value (absolute maximum rating value)
GB/T 15529--1995
Unless otherwise specified, the following limits apply throughout the operating temperature range. Only the clause numbers with titles are repeated, and any additional values ​​are given where appropriate, but without clause numbers. The curves are preferably given in Chapter 10 of this specification.
Clause number
Working environment temperature
Storage temperature
Reverse voltage (per section)
Forward current (per section)
Forward peak current under pulse conditions\(per section) Power dissipation (display full brightness)
Note: 1) Pulse width and duty cycle should be specified. 5 Photoelectric characteristics
Test requirements See Chapter 8 of this specification.
Minimum value
Maximum value
[Only the clause number with the title shall be repeated. Any additional characteristics shall be given in the appropriate place without the clause number. [When several specifications of devices are specified in the same detailed specification, the relevant values ​​shall be given in a continuous manner to avoid duplication of the same values
[The curves are preferably given in Chapter 10.]
Clause number
Characteristics and conditions
Unless otherwise specified, Tmb--25C
Forward voltage (each section)
Under specified conditions
Reverse current (each section)
Under 4. 3 V specified in Article
Luminous intensity (per segment)
Under specified I
Luminous intensity uniformity!
Under specified I
Peak value Emission wavelength
Under specified
Spectral radiation bandwidth (when applicable)
Under specified I
Switching time (when applicable)
Under specified DC bias current, pulse width and duty cycle
Note: 1) Except for the decimal point.
Minimum value
Maximum value
Inspection group
6 Marking
GB/T 15529—1995
Except for the markings given in column (7) of Chapter 1 of this specification and (or) Article 2.5 of GB4589.1, any other information shall be given in detail in this chapter. "
7 Ordering Information
[Unless otherwise specified, the following information is required at least to order a specific device; Model:
h Detailed specification number and version number,
C Quality assessment category as specified in Article 2.6 of GB4589.1 and/or screening level as specified in Article 3.6 of GB12565; d Any other details. 』
8 Test parts and inspection requirements
"The test conditions and inspection requirements given in the following tables, with their numerical values ​​and exact conditions, shall be specified in accordance with the requirements of the given model and the relevant test items specified in the relevant specifications. [When formulating detailed specifications, more than two replacement tests or test methods shall be selected. "When several specifications of devices are included in the same detailed specification, the relevant conditions and (or) numerical values ​​shall be given in a continuous manner to avoid the repetition of the same conditions and (or) numerical values ​​as much as possible. Unless otherwise specified, the article numbers cited in this chapter correspond to the article numbers of G34589.1. The article numbers cited for the test methods used in this chapter are consistent with GB12565.
L According to the applicable quality assessment category, the sampling requirements can be found in Article 3.7 of GB12565. For Group A inspection, the AQI. or I.TPD scheme should be selected when formulating detailed specifications.
A Group - Batch by Batch
LSL lower specification limit
USL upper specification limit
All tests are non-destructive (see 3.6.6) ConditionsWww.bzxZ.net
Inspection or test
Group A1
External visual inspection
Group A2a
Inoperative devices
Luminous intensity (per segment)
Forward voltage (per segment)
Reverse current (per segment)
Referenced standards
Appendix A to this specification
Unless otherwise specified
Tmb= 25
[Under specified I]
[Under specified F]
[Under specified Vr]
Minimum value
According to Chapter 5 of this specification
Inspection requirements
Maximum value
Inspection or test
A2b group
Photoelectric characteristics
Luminous intensity (each section)
Forward voltage (each section)
Reverse current (each section)
Measurement of luminous intensity
GB/T15529--1995
Cited standards
Appendix A of this specification
Appendix A of this specification
Unless otherwise specified
7gmb= 25 C
[Under specified I
[Under specified I
[Under specified VR conditions_
[Under specified conditions
Group B batch by batch
Only tests marked with (D) are destructive (see 3.6.6) Conditions
Inspection or test
Group B1
Group B3
Terminal strength bending (D)
Group B4
Solderability
Group B5
Rapid temperature change
Followed by
Cyclic damp heat (D)
(For non-sealed devices)
Sealing (when applicable)
(For sealed devices)
Final test
Luminous intensity (per segment)
Referenced standards
CB 12565 Appendix R
GB 49371: ,2- 1. 2
GB 4937,2. 2. 1
Gl3 4937.3. 1. 1
SJ/7. 9016*, . 4
GB 4937.3. 7
Appendix A to this specification
Minimum value
Inspection requirements
Maximum value
LSI. Specification lower limit value
According to Chapter 5 of this specification
USL specification upper limit value
Inspection requirements
Unless otherwise specified
Tamb- 25 ℃
[Specific provisions in the detailed specification
Specific provisions in the detailed specification
Special use of the sample tank method!
Severity:
Temperature: 55c
Number of cycles + 2
[Under the specified conditions]
Minimum value
Maximum value
See Chapter 1 of this specification
No damage
Good wetting
No obvious change in appearance color
Inspection or test
Forward voltage (each section)
Reverse current (each section)
|B8 group
Electrical durability
Final test
Frequency strength (each section)
Forward voltage (each section)
Reverse current (each section)
B9 group
High temperature storage
Final test
Same group
CRRL group
GB/T15529—1995
Cited standards
GR49383 and
Appendix to this specification
B2 or B3
Appendix A to this specification
GB 1937.3.2
Same as B5 group
Unless otherwise specified
Tab - 25'C
[Under specified IP]
[Under specified V]
Working life
Time: 168h
Display is fully lit
[Under specified door
[Under specified I]
[Under specified V]
Temperature: Maximum Tr
Time: 168h
Same as 135 group
Minimum value
Inspection requirements
Maximum value
No obvious change in appearance color
Same as 135 group
Provide B3, B4, B5, B6, B9 Count data, provide measurement data before and after B8 grouping Note: 1) GB4937 Semiconductor discrete device mechanical and climatic test method. 2) SJ/7.9016 Semiconductor device mechanical and climatic test method. 3) GB4938 Semiconductor discrete device acceptance and reliability. Group C - Cycle
LSL specification lower limit value
According to Chapter 5 of this specification
USL specification upper limit value
Only the test marked with (D) is destructive (see Section 3.6.6) Conditions
Inspection or test
C1 group
C2a group
Optoelectronic characteristics
Reference mark
GB 12565 Attached ball B
Unless otherwise specified
T 25 ℃
Minimum value
Inspection requirements
Maximum value
See Chapter 1 of this specification
Inspection or test
Switching time (when applicable)
Peak emission wavelength
Spectral emission bandwidth (when applicable)
Group C3
Tension strength of lead terminal (D)
Group C4
Resistance to soldering heat (D)
Final test
Interval Group B5
C6 Fractal dimension
(for air-sealed devices)
Mechanical shock
Followed by
Carefully determined speed
Final test
Same as Group B5
C7 Group
Steady-state damp heat (D)
(for sealed devices)
Circulating damp heat (D)
(for non-sealed devices)
Final test
Same as Group B8
Group C8
Electrical durability
Final test
Same as Group B8
GB/T 15529—1995
Reference standard
GB 4937,2.1.1
GB 4937,2.2.2
Same as Group B5
GB 4937,2.4
GB 4937.2.3
GB 4937.2.5
Same as B5 group
GB 4937.3.5
SJ/Z 9016, 1.4
Shang 88 group
GB4938 and this specification
Thanks to B2 or B3
Same as B8 group
Unless otherwise specified
[Under the specified DC bias current, pulse width and duty cycle
Under the provisions of Article 5.5
Under the provisions of Article 5.5
[Specifically specified in the detailed specification
Method 1A
Same as R5 group
[Specifically specified in the detailed specification]
Same as B5 Group
Strictness: 4d
Severity: 55℃
Number of cycles: G
Same as group 38
Working life
Time: 1000h
Display full brightness
Same as group B8
Minimum value
Inspection requirements
Maximum value
No damage
Same as group B5
Same as group B5
Same as group B8
BB group
Inspection or test
C9 group
High temperature storage
Final test
Same as group B8
C11 group
Durability of marking
CRRL group
9 Group D—Identification and approval test
GB/T 15529--1995
Cited standards
GB 4937,3.2
Same as group B8
Appendix C to this specification
Unless otherwise specified
Tmb=25 ℃
Temperature: maximum T.
Time: 1000h
Same as group B8
Minimum value
Inspection requirements
Maximum value
No obvious change in appearance color
No obvious deformation in appearance
Same as group B8
The marking should remain clear
Provide counting data for C3, C4, C6, C7.B9, and provide measurement data before and after group BB [When required, this test should be specified in the detailed specification (for identification and approval only). ]10 Additional information (not for inspection)
[Additional information should be provided as long as the device specifications and usage require it. For example: temperature derating curves for limit values:
Complete description of test circuit or supplement:
Detailed appearance drawing and electrical schematic diagram and lead-out terminal identification. 」Unit
GB/T15529--1995
Appendix A
Test method for luminous intensity (I,) and luminous intensity uniformity (M) of semiconductor light-emitting digital tubes (supplement)
AT luminous intensity (I,) test method
A1.1 National
Under specified working conditions, test the luminous intensity radiated in the normal direction of the luminous segment of the digital tube. A1.2 Test Schematic Diagram
The test schematic diagram is shown in Figure Al.
Light Intensity Tester
Figure A1 Test Schematic Diagram
): The distance between the plane of the luminous segment of the digital tube and the receiving surface of the light intensity tester; L-the length of the luminous segment of the digital tube A1.3 Test Steps
Place the digital tube to be tested and the luminous intensity tester in a dark box, and make 1L/D≤1/10; a
Adjust the position of the digital tube so that the center of the luminous segment to be tested and the center of the receiving surface of the light intensity tester are placed on the same axis h
Turn on the test power supply, apply the specified working conditions to make the luminous segment to be tested emit light, and record the reading of the light intensity tester; d.
Repeat the above steps to test the luminous intensity of each segment of the digital tube one by one. A2 Test method for uniformity of luminous intensity (M) A2.1 Purpose
Under specified conditions, test the ratio of the intensity value Im of the luminous segment with the largest luminous intensity to the intensity value Iv of the luminous segment with the smallest luminous intensity in each luminous segment of the semiconductor light-emitting digital tube.
A2.2 Test principle diagram
The test principle diagram is the same as Figure A1.
A2.3 Test steps
Test the luminous intensity of each segment of the digital tube in turn according to Figures A1 and A1.3, find the intensity value Imx of the luminous segment with the largest luminous intensity and the intensity value Ivmia of the luminous segment with the smallest luminous intensity, and calculate the uniformity of the luminous intensity (M) of the digital tube according to the following formula. M = I mez/Iumin
Where: Imx-the intensity value Imin of the luminous segment with the largest luminous intensity-the intensity value of the luminous segment with the smallest luminous intensity. -(A1)
B1 General
GB/T15529—1995
Appendix B
Electrical durability test method
(Supplement)
The electrical durability test adopts the relevant provisions of GB4938 standard: and the working life test conditions are stipulated as follows. B2 DC durability test method
The electrical schematic diagram of the DC durability test method is shown in Figure B1. Recovery device
Figure B1 Electrical schematic diagram of the DC durability test method Test conditions: The current shall comply with the provisions of Article 4.4 of this specification, and the temperature shall comply with the provisions of Article 2.2.1.3 of GB 4938. B3 Dynamic electrical durability test method
The electrical schematic diagram of the dynamic electrical durability test is shown in Figure B2. Test device
Figure B2 Electrical schematic diagram of dynamic electrical durability test Test conditions: current shall comply with the provisions of Article 4.5 of this specification, and temperature shall comply with the provisions of Article 2.2.1.3 of GB4938. C Purpose
GB/T15529-1995
Appendix C
Test method for durability of marking
(Supplement)
The purpose of this test is to check the durability of device marking 2 Method
Wipe the device marking three times with cotton cloth or cotton ball soaked in anhydrous ethanol solution. Under the same conditions as the initial inspection, the marking should remain clear.
Additional instructions:
This standard was proposed by the Ministry of Electronics Industry of the People's Republic of China. This standard is under the jurisdiction of the Electronic Standardization Institute of the Ministry of Electronics Industry. This standard was drafted by Suzhou Semiconductor General Factory. The main drafters of this standard are Zhou Ciping and Chen Xiping.
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